Electrical properties of multidoped ceria

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Europium-doped calcium titanate: Optical and structural evaluations

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Density, Refractive Index, Apparent Specific Volume, and Electrical Conductivity of Aqueous Solutions of Poly(ethylene glycol) 1500 at Different Temperatures

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Thermal and structural properties of tantalum alkali-phosphate glasses

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Electrical properties of highly conducting Sno2:Sb nanocrystals synthesized using a nonaqueous sol gel method

This work describes the synthesis of highly conducting antimony-doped tin oxide (ATO) nanocrystals prepared via a nonaqueous sol–gel route in the size range of 4–6 nm and provides insights into its electrical properties. The antimony composition was varied from 1 to 18 mol% and the lowest resistivity (4.0 × 10−4Ω·cm) was observed at room temperature in the SnO2:8.8 mol% Sb composition. The samples were evaluated by X-ray diffraction, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and scanning electron microscope, and resistivity measurements were taken in the four-probe mode in the temperature range of 13–300 K. The results show highly crystalline nanoparticles in a monodisperse colloidal system, dependence on the shape of ATO nanoparticles as a function of Sb distribution, low resistivity, and semiconductor–metal transition.

Influence of the concentration of Sb2O3 on the electrical properties of SnO2 varistors

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Influence of the preparation route on the structural, morphological and spectroscopic properties of SrTiO3 and SrTiO3:eu3+ powders

This research shows the influence of the synthesis route in the structural and morphological characteristics as well as in the luminescent properties of doped with europium and pure SrTiO3 (STO) powders prepared by microwave assisted hydrothermal synthesis, MWH, and by the polymeric precursor method, PPM. The XRD at room temperature of the STO powders nominally pure obtained by PPM at 700°C for 3 hours, as well as by the MWH at 190°C by 30 minutes present all the reflection peaks for the cubic perovskite structure (JCPDS-ICDD 35-734). The morphology varies according to the synthesis route. The particles of pure STO obtained by PPM presents morphology in the form of plates and the morphology of the particles synthesized by MWH is spherical with approximately 150 nm. The photoluminescent analysis shows for pure STO wide bands associated with the transition of charge transfer from the titanates group (TiO3)2- that are centered on 450 nm. In both preparation methods the emission bands obtained in the composites spectra were found to be asymmetric and low intense. However, in the case of the STO prepared by the PPM a bigger FWHM of the band can be observed. The excitation of the samples was done using a laser (Coherent Innova) with wavelength of 350 nm.

Structural and thermal properties of carboxylic acid functionalized polythiophenes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electrical Properties at Grain Boundaries Influenced by Cr3+ Diffusion in SnO2.ZnO.Nb2O5-Films Varistor Prepared by Electrophoresis Deposition

SnO2-based varistors are strong candidates to replace the ZnO-based varistors due to ordering fewer additives to improve its electrical behavior as well as by showing similar nonlinear characteristics of ZnO varistors. In this work, SnO2-nanoparticles based-varistors with addition of 1.0 %mol of ZnO and 0.05 %mol of Nb2O5 were synthesized by chemical route. SnO2.ZnO.Nb2O5-films with 5 μm of thickness were obtained by electrophoretic deposition (EPD) of the nanoparticles on Si/Pt substrate from alcoholic suspension of SnO2-based powder. The sintering step was carried out in a microwave oven at 1000 °C for 40 minutes. Then, Cr3+ ions were deposited on the films surface by EPD after the sintering step. Each sample was submitted to different thermal treatments to improve the varistor behavior by diffusion of ions in the samples. The films showed a nonlinear coefficient (α) greater than 9, breakdown voltage (VR) around 60 V, low leakage current (IF ≈ 10-6 A), height potential barrier above 0.5 eV and grain boundary resistivity upward of 107 Ω.cm.

Rietveld refinement, cluster modelling, growth mechanism and photoluminescence properties of CaWO4: Eu3+ microcrystals

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A joint experimental and theoretical study on the electronic structure and photoluminescence properties of Al-2(WO4)(3) powders

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Third-order nonlinearities and other properties of molybdenum lead-pyrophosphate glass

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Effects of humidity on the electrical properties of thermal inkjet-printed films of copper tetrasulfonated phthalocyanine (CuTsPc) onto paper substrates

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Investigation of photoinduced electrical properties in the heterojunction TiO2/SnO2

TiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550 degrees C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100 degrees C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. The electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65 eV) seems to excite the most external layer whereas a InGaN LED (2.75 eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.

Morphological and electrical evolution of ZnO:Al thin films deposited by rf magnetron sputtering onto glass substrates

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)