Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates

In this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(0 0 1) substrate. The reflection high-energy electron diffraction (RHEED) pattern of the low-temperature GaN buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. Four-circle X-ray double-crystal diffraction (XRDCD) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic GaN (c-GaN) films grown on the buffer layers. The calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-GaN film. Under optimized condition, 47 meV FWHM of near band gap emission of the c-GaN film was achieved. (C) 2000 Elsevier Science B.V. All rights reserved.

Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD

The annealing behavior of the hexagonal phase content in cubic GaN (c-GaN) thin films grown on GaAs (001) by MOCVD is reported. C-GaN thin films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition (MOCVD). High temperature annealing is employed to treat the as-grown c-GaN thin films. The characterization of the c-GaN films is investigated by photoluminescence (PL) and Raman scattering spectroscopy. The change conditions of the hexagonal phase content in the metastable c-GaN are reported. There is a boundary layer existing in the c-GaN/GaAs film. When being annealed at high temperature, the intensity of the TOB and LOB phonon modes from the boundary layer weakens while that of the E-2 phonon mode from the hexagonal phase increases. The content change of hexagonal phase has closer relationship with annealing temperature than with annealing time period.

Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures

Improved electrical properties of AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by metalorganic chemical vapor deposition (MOCVD) were achieved through increasing the Al mole fraction in the AlGaN barrier layers. An average sheet resistance of 326.6 Omega/sq and a good resistance uniformity of 98% were obtained for a 2-inch Al0.38Ga0 62N/GaN HEMT structure. The surface morphology of AlxGa1-xN/GaN HEMT structures strongly correlates with the Al content. More defects were formed with increasing Al content due to the increase of tensile strain, which limits further reduction of the sheet resistance. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Research on the ultrafast fluorescence property of thylakoid membranes of the wild-type and mutant rice

A high yielding rice variety mutant (Oryza sativa L., Zhenhui 249) with low chlorophyll b (Chl b) has been discovered in natural fields. It has a quality character controlled by a pair of recessive genes (nuclear gene). The partial loss of Chl b in content affects the efficiency of light harvest in a light harvest complex (LHC), thus producing the difference of the exciting energy transfer and the efficiency of photochemistry conversion between the mutant and wild-type rice in photosynthetic unit. The efficiency of utilizing light energy is higher in the mutant than that in the wildtype rice relatively. For further discussion of the above-mentioned difference and learning about the mechanism of the increase in the photochemical efficiency of the mutant, the pico-second resolution fluorescence spectrum measurement with delay-frame-scanning single photon counting technique is adopted. Thylakoid membranes of the mutant and the wild-type rice are excited by an Ar+ laser with a pulse width of 120 ps, repetition rate of 4 MHz and wavelength of 514 nm. Compared with the time and spectrum property of exciting fluorescence, conclusions of those ultrafast dynamic experiments are: 1) The speeds of the exciting energy transferred in photo-system I are faster than that in photo-system II in both samples. 2) The speeds of the exciting energy transfer of mutant sample are faster than those of the wildtype. This might be one of the major reasons why the efficiency of photosynthesis is higher in mutant than that in the wild-type rice.

土壤干旱对2个种源野生酸枣幼苗生长和生理特性的影响

以采自陕西杨陵和安塞的2个1年生酸枣幼苗为材料,采用盆栽称重控水法研究了中度和重度土壤干旱胁迫对它们生长和生理特性的影响。结果表明,不同程度的水分胁迫均使2种源酸枣新生侧枝长度受到极显著抑制,其苗高和基径也受到一定程度抑制,同时分别使叶片相对含水量和水分饱和亏有一定程度的降低和升高;2种源酸枣叶片的叶绿素a含量在各水分胁迫均极显著降低,它们的总叶绿素含量也在重度干旱下显著降低;随土壤干旱胁迫时间的延续,2种源酸枣叶片保护酶SOD、CAT、APX活性上下波动,其脯氨酸和可溶性糖含量逐渐升高,而超氧阴离子含量在较低水平下波动,丙二醛含量逐渐降低。杨陵酸枣在土壤水分较好的条件下表现良好,而安塞酸枣则具有更强的适应旱生能力。研究发现,在不同程度的土壤干旱胁迫下,2个种源酸枣的生长均受到一定程度的抑制,但它们均能调节自身的保护酶系统活性和渗透调节物质含量来减轻干旱伤害,维持植物体的正常生理代谢功能,表现出较强的抗旱耐旱能力。

施氮对半湿润农田夏玉米冠层氮素及叶绿素相对值(SPAD值)垂直分布的影响

以半湿润地区土垫旱耕人为土为供试土壤,采用田间试验,研究了不同施氮水平下夏玉米(Zeamays L.)拔节期、灌浆期和成熟期3个生育期冠层叶片氮素、叶绿素相对值(SPAD值)的垂直分布规律及其差异;同时对各层叶片含氮量、SPAD值与施氮量进行相关分析。结果表明,在各生育期不同叶层叶片含氮量按上、中、下层顺序呈明显递减规律,从全生育期不同施氮处理看,上层比中层增加6.64%,中层比下层增加5.18%。随施氮量增加,中上层叶片含氮量差异增大,中下层叶片含氮量差异减小。冠层内叶片SPAD值垂直分布规律与叶片含氮量分布规律相类似。相关分析表明,全生育期各层叶片SPAD值与叶片含氮量呈极显著线性正相关关系(R=0.503**)。进一步分析发现,各层叶片SPAD值、叶片含氮量与施氮量的相关性以上层叶关系最为密切,揭示了夏玉米氮素营养诊断的较好叶片是上层叶位。

NaCl胁迫对甜高粱幼苗保护酶活性等生理特性的影响

采用不同浓度NaCl溶液(100 mmol/L、200 mmol/L)胁迫处理甜高粱幼苗,测定了叶片中叶绿素含量、脯氨酸含量及三种保护酶活性等生理指标。结果表明:100 mmol/L和200 mmol/L处理的甜高粱幼苗质膜相对透性、脯氨酸和丙二醛含量升高;可溶性蛋白和叶绿素含量降低;保护酶系统中叶片超氧化物歧化酶(SOD)和过氧化氢酶(CAT)活性均升高,且在100 mmol/L浓度处理下达到最大,而过氧化物酶(POD)活性呈先升高再降低趋势。NaCl胁迫对甜高粱幼苗的一些生理特性产生一定影响。

EFFECT OF TOTAL HYDROGEN CONTENT IN SILICON-NITRIDE SENSITIVE FILM ON PERFORMANCE OF ISFET

Quantitative determinations of the hydrogen content and its profile in silicon nitride sensitive films by the method of resonant nuclear reaction have been carried out. At a deposition temperature of 825-degrees-C, hydrogen exists in an LPCVD silicon nitride sensitive film and the hydrogen content on its surface is in the range (8-16) x 10(21) cm-3, depending on the different deposition processes used. This hydrogen content is larger than the (2-3) x 10(21) cm-3 in its interior part, which is homogeneous. Meanwhile, we observe separate peaks for the chemical bonding configurations of Si-H and N-H bonds, indicated by the infrared absorption bands Si-O (1106 cm-1), N-H (1200 cm-1), Si-H-3 (2258 cm-1) and N-H-2 (3349 cm-1), respectively. The worse linear range of the ISFET is caused by the presence of oxygen on the surface of the silicon nitride sensitive film. The existence of chemical bonding configurations of Si-H, N-H and N-Si on its surfaces is favourable for its pH response.