Low temperature annealing of amorphous gallium arsenide films

This work reports the changes in the optical properties produced by annealing of amorphous GaAs at temperatures smaller than or just sufficient to produce crystallization of the material. The films were grown by the flash evaporation technique on glass substrates at room temperature. Optical and structural changes of our samples were monitored through photothermal deflection spectroscopy, optical transmittance and reflectance and X-ray diffraction (XRD). The structural results from XRD detected no crystallization of the films for temperatures up to 240 degreesC. We have observed consistent changes in the optical gap and Urbach energy of the annealed film. The optical gap increases with increasing annealing temperature from 1.17 to 1.32 eV. The Urbach energy decrease from 120 meV (as-grown film) to 105 meV (anneal at 200 degreesC). We propose that these changes are due to a diminution of the tail state defects and/or the relaxation of strained bonds. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Effects of post-annealing on the dielectric properties of Au/BaTiO3/Pt thin film capacitors

Barium titanate thin films were prepared by the polymeric precursor method and deposited onto Pt/Ti/SiO2/Si substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR) and micro-Raman spectroscopy were used to investigate the formation of the BaTiO3 perovskite phase. Afterwards, the films were submitted to post-annealing treatments in oxygen and nitrogen atmospheres at 300 degreesC for 2 h, and had their dielectric properties measured. It was observed that the electric properties of the thin films are very sensitive to the nature of the post-annealing atmosphere. This study demonstrates that post-annealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that post-annealing in a nitrogen atmosphere produces a slight dielectric relaxation. (C) 2004 Elsevier B.V All rights reserved.

The evolution of arsenic excess induced by thermal annealing in arsenic-rich Ga1-xAsx films

The evolution of As excess in As-rich Ga1-xAsx films is analyzed for distinct As concentrations and different annealing temperatures. Initially the samples are amorphous and crystallize partially after thermal annealing. The formation of both amorphous and crystalline As clusters is examined by micro-Raman and X-ray diffraction analysis. When highly and moderately unbalanced materials are compared, differences are clearly observed concerning the crystallization temperature and the migration kinetics of the As excess. These differences are explained by the fort-nation of As precipitates around the GaAs crystallites in the moderately unbalanced material, contrasting with the migration of the As excess to the film surface in the highly unbalanced material.

Changes of microstructure in alpha AgZn during post-deformation annealing after cold-rolling

The annealing processes of deformation-induced defects after cold-rolling to about 30 and 60% thickness reduction were investigated for Ag-21, 23, 28 at% Zn by means of residual electrical resistivity, microhardness, light microscopy and transmission electron microscopy (TEM) Three annealing stages have been detected and consistently interpreted as annealing-out of mainly point defects and their agglomerates (stage I), formation of dislocation cells and recrystallized strain-free grains (stage II) and grain growth (stage III). Further, it is tried to determine the evolution of defect production (point defects and dislocations) during rolling deformation from measured changes of electrical resistivity and microhardness. Copyright (C) 1996 Acta Metallurgica Inc.

Thermal annealing-induced electric dipole relaxation in natural alexandrite

Electrical properties of natural alexandrite (BeAl2O4:Cr3+) are investigated by the thermally stimulated depolarization current (TSDC) technique. Samples are submitted to consecutive annealing processes and TSDC is carried out after each annealing, yielding bands with different parameters. These bands are fitted by a continuous distribution of relaxation parameters: activation energy and pre-exponential factor of the Arrhenius equation. It has been observed that annealing influences the dipole relaxation behavior, since it promotes a modification of Fe3+ and C3+ impurity distributions on sites of distinct symmetry: Al-1 and Al-2. In order to have a reference for comparison, TSDC is also carried out on a synthetic alexandrite sample, where the only impurity present is Cr3+ ion.

Dielectric and fatigue properties of Pb(Zr0.53Ti0.47)O-3 thin films prepared from oxide precursors method

Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase in hysteresis loops. The reasons have been attributed to different mechanisms such as a large voltage applied on ferroelectric film in every reading process in Ferroelectric Random Access Memory (FeRAM) or memories for digital storage in computer, grain size effects and others. The aim of this work is to investigate the influence of the crystallization kinetics on dielectric and ferroelectric properties of the Pb(Zr0.53Ti0.47)O-3 thin films prepared by an alternative chemical method. Films were crystallized in air on Pt/Ti/SiO2/Si substrates at 700 degrees C for 1 hour, in conventional thermal annealing (CTA), and at 700 degrees C for 1 min and 700 degrees C 5 min, using a rapid thermal annealing (RTA) process. Final films were crack free and presented an average of 750 nm in thickness. Dielectric properties were studied in the frequency range of 100 Hz - 1 MHz. All films showed a dielectric dispersion at low frequency. Ferroelectric properties were measured from hysteresis loops at 10 kHz. The obtained remanent polarization (P-r) and coercive field (E-c) were 3.7 mu C/cm(2) and 71.9 kV/cm respectively for film crystallized by CTA while in films crystallized by RTA these parameters were essentially the same. In the fatigue process, the P, value decreased to 14% from the initial value after 1.3 x 10(9) switching cycles, for film by CTA, while for film crystallized by RTA for 5 min, P, decreased to 47% from initial value after 1.7 x 10(9) switching cycles.

Air-drying of fresh and osmotically pre-treated pineapple slices: Fixed air temperature versus fixed slice temperature drying kinetics

In this investigation, the air drying characteristics of fresh and osmotically pre-treated pineapple slices in a tray dryer were studied under different operating conditions. The air velocity varied from 1.5 to 2.5 m/s and the air temperature from 40 to 70 degreesC. The analytical solution of the second Fick's law for an infinite slab was used to calculate effective diffusion coefficients and their temperature dependence could be well represented by an Arrhenius-type equation. Comparison of the results showed that the diffusion coefficients were lower for the pre-treated fruit. By means of automatic control, it was possible to obtain drying curves under conditions of constant product temperature, which showed to be an alternative to reduce the drying time of pineapple slices.

Optical and electrical diagnostics of a spark-plug discharge in air

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Study of the annealing temperature effect on the structural and luminescent properties of SrWO4:Eu phosphors prepared by a non-hydrolytic sol-gel process

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Thermal behaviour of fumaric acid, sodium fumarate and its compounds with light trivalent lanthanides in air atmosphere

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Analysis of various conditions in order to measure electromyography of isometric contractions in water and on air

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

A Method for Determination of Ammonia in Air using Oxalic Acid-Impregnated Cellulose Filters and Fluorimetric Detection

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Ventilation of the giant nests of Atta leaf-cutting ants: does underground circulating air enter the fungus chambers?

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural and electrical properties of SrBi2(Ta0.5Nb0.5)(2)O-9 thin films

SrBi2(Ta0.5Nb0.5)(2)O-9 (SBTN) thin films were obtained by polymeric precursor method on Pt/Ti/SiO2/Si(1 0 0) substrates. The film is dense and crack-free after annealing at 700 degrees C for 2 h in static air. Crystallinity and morphological characteristic were examined by X-ray diffraction (XRD), field emission scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM). The films displayed rounded grains with a superficial roughness of 3.5 nm. The dielectric permittivity was 122 with loss tangent of 0.040. The remanent polarization (P-r) and coercive field (E-c) were 5.1 mu C/cm(2) and 96 kV/cm, respectively. (C) 2007 Published by Elsevier B.V.

Effects of thermal annealing on the semi-insulating properties of radio frequency magnetron sputtering-produced germanate thin films

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)