947 resultados para Zirconium doping


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利用掺镧锆钛酸铅(PLZT)陶瓷二次电光效应结合光纤环形镜结构的优势构成偏振无关高速电光开关。采用琼斯矩阵方法分析了光纤环形镜的输出特性,给出了开关消光比同器件结构参量之间的关系。测量掺镧锆钛酸铅电光开关具有输入偏振无关特性,光开关消光比达到25dB,响应时间小于3μs。此外利用此开关装置测量获得了实验用掺镧锆钛酸铅陶瓷的克尔系数为k~1.1×10^-16m^2/V^2。理论分析和实验结果表明,利用环形镜结构稳定优势和掺镧锆钛酸铅优良的电光特性结合设计的高速光开关具有良好的应前景。本工作对掺镧锆钛酸铅电光

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Three wavelengths of red, green and blue of recording beams are systemically tested for the UV-assistant recording and optical fixing of holograms in a strongly oxidized Ce:Cu:LiNbO3 crystal. Three different photorefractive phenomena are observed. It is shown that the green beams will optimally generate a critical strong nonvolatile hologram with quick sensitivity and the optimal switching technique could be jointly used to obtain a nearly 100% high diffraction. Theoretical verification is given, and a prescription on the doping densities and on the oxidation/reduction states of the material to match a defined recording wavelength for high diffraction is suggested.

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Part I

The physical phenomena which will ultimately limit the packing density of planar bipolar and MOS integrated circuits are examined. The maximum packing density is obtained by minimizing the supply voltage and the size of the devices. The minimum size of a bipolar transistor is determined by junction breakdown, punch-through and doping fluctuations. The minimum size of a MOS transistor is determined by gate oxide breakdown and drain-source punch-through. The packing density of fully active bipolar or static non-complementary MOS circuits becomes limited by power dissipation. The packing density of circuits which are not fully active such as read-only memories, becomes limited by the area occupied by the devices, and the frequency is limited by the circuit time constants and by metal migration. The packing density of fully active dynamic or complementary MOS circuits is limited by the area occupied by the devices, and the frequency is limited by power dissipation and metal migration. It is concluded that read-only memories will reach approximately the same performance and packing density with MOS and bipolar technologies, while fully active circuits will reach the highest levels of integration with dynamic MOS or complementary MOS technologies.

Part II

Because the Schottky diode is a one-carrier device, it has both advantages and disadvantages with respect to the junction diode which is a two-carrier device. The advantage is that there are practically no excess minority carriers which must be swept out before the diode blocks current in the reverse direction, i.e. a much faster recovery time. The disadvantage of the Schottky diode is that for a high voltage device it is not possible to use conductivity modulation as in the p i n diode; since charge carriers are of one sign, no charge cancellation can occur and current becomes space charge limited. The Schottky diode design is developed in Section 2 and the characteristics of an optimally designed silicon Schottky diode are summarized in Fig. 9. Design criteria and quantitative comparison of junction and Schottky diodes is given in Table 1 and Fig. 10. Although somewhat approximate, the treatment allows a systematic quantitative comparison of the devices for any given application.

Part III

We interpret measurements of permittivity of perovskite strontium titanate as a function of orientation, temperature, electric field and frequency performed by Dr. Richard Neville. The free energy of the crystal is calculated as a function of polarization. The Curie-Weiss law and the LST relation are verified. A generalized LST relation is used to calculate the permittivity of strontium titanate from zero to optic frequencies. Two active optic modes are important. The lower frequency mode is attributed mainly to motion of the strontium ions with respect to the rest of the lattice, while the higher frequency active mode is attributed to motion of the titanium ions with respect to the oxygen lattice. An anomalous resonance which multi-domain strontium titanate crystals exhibit below 65°K is described and a plausible mechanism which explains the phenomenon is presented.

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从放大器速率方程出发,分析了掺镱双包层光纤放大器的放大特性。模拟计算了无信号输入时放大器上能级粒子数、泵浦功率和放大自发辐射(ASE)在放大器中的稳态分布。分析了前向和后向泵浦时,高功率高斯脉冲放大时的脉冲波形畸变、上能级粒子数的时间特性、放大器存储能量和脉冲能量演化等动态特性。讨论了掺镱双包层光纤放大器输出脉冲能量随不同输入脉冲峰值功率和泵浦功率的关系。该模型和结论对高功率脉冲放大器的设计和优化具有一定的理论指导意义。

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Este trabalho teve por objetivo a realização do estudo das propriedades ópticas, magnéticas e estruturais do cristal elpasolita Cs2NaAlF6 dopado com as concentrações de 0,1%, 1,0%, 3,0%, 10,0%, 30,0% e 50,0% de Cr3+. O interesse no estudo deste sistema reside na existência de uma larga e intensa banda de luminescência na temperatura ambiente, que se estende do visível ao infravermelho próximo, podendo então ser utilizado como fonte de radiação sintonizável em dispositivos ópticos, optoeletrônicos e detectores, entre outros. Para a investigação das propriedades ópticas foram feitas medidas de luminescência, excitação e luminescência resolvida no tempo, na temperatura ambiente e a baixas temperaturas. Os resultados obtidos mostram largas bandas de luminescência atribuídas aos íons de Cr3+, ocupando dois sítios octaédricos não equivalentes. Os resultados também mostram que a intensidade integrada da luminescência, o baricentro da banda de emissão e o tempo de vida do estado luminescente variam com a concentração de impureza residente no sistema. Foram realizadas medidas de calor específico em função do campo magnético em uma larga faixa de temperatura, cujos resultados mostram o aparecimento do efeito Schottky a baixas temperaturas. Medidas de susceptibilidade magnética em funcão da temperatura também foram realizadas, e mostram um comportamento paramagnético, típico do íon impureza Cr3+, com um ordenamento magnético de curto alcance. Para a determinação das propriedades estruturais foram realizadas medidas de difração de nêutrons na temperatura ambiente.

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Póster presentado en The Energy and Materials Research Conference - EMR2015 celebrado en Madrid (España) entre el 25-27 de febrero de 2015

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Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O-2 with the relative O-2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. (c) 2007 Elsevier B.V. All rights reserved.

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系统总结了用于光存储记录层的氧化物薄膜的存储机理、存储特性以及最新进展,讨论了氧化物掺杂对提高存储性能的影响,指出了氧化物薄膜存在的不足,并探讨了可能的改善途径。在此基础上对存储材料的发展趋势及氧化物材料的研究前景进行了展望。

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Power Point presentado en The Energy and Materials Research Conference - EMR2015 celebrado en Madrid (España) entre el 25-27 de febrero de 2015

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Output beam quality of edge pumped planar waveguide lasers with confocal unstable resonators is investigated by diffraction methods, taking into account gain saturation, asymmetric pumping, and beam interaction. The influences of pumping uniformity, doping concentration, cavity length and effective Fresnel number are analyzed with respect to output beam quality and pumping efficiency. It is found that good beam quality and high efficiency can be obtained with asymmetric pumping and optimized negative branch confocal unstable resonators. (c) 2005 The Optical Society of Japan.

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A novel double-slab Nd:YAG laser, which uses face-pumped slab medium cooled by liquid with different temperatures on both sides, is proposed. The thermal distortion of wavefront caused by the non-uniform temperature distribution in the laser gain media can be self-compensated. According to the method of operation, the models of the temperature distribution and stress are presented, and the analytic solutions for the model are derived. Furthermore, the numerical simulations with pulse pumping energy of 10 J and repetition frequencies of 500 and 1000 Hz are calculated respectively for Nd:YAG laser medium. The simulation results show that the temperature gradient remains the approximative linearity, and the heat stress is within the extreme range. Then the absorption coefficient is also discussed. The result indicates that the doping concentration cannot be too large for the high repetition frequency laser. It has been proved that the high repetition frequency, high laser beam quality, and high average output power of the order of kilowatt of Nd: YAG slab laser can be achieved in this structure.

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A high-power Ytterbium-doped fiber laser (YDFL) with homemade double clad fiber (DCF) is introduced in this paper. The output power characteristics of a linear cavity fiber laser have been studied theoretically by solving the rate equations and experimentally tested with single- and double-end-pumping configurations. When both ends of the fiber are pumped by two high-power laser diodes with a launched power of similar to 300 W each, a maximum CW output of 444 W is obtained with a slope efficiency of similar to 75%. (c) 2006 Elsevier Ltd. All rights reserved.

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研究了摩尔组分为70TeO2-(20-x)ZnO-xPbO-5La2O3-2.5K2O-2.5Na2O(x=0,5,10,15,20)的新型多元铅锌镧碲酸盐激光玻璃,外掺Yb2O3为玻璃摩尔组分的1%,测试了试样的物理性质及吸收光谱、荧光光谱和荧光寿命,计算了Yb^3+的吸收截面、受激发射截面、荧光有效线宽等光谱参数,结果表明:该系列玻璃都具有良好的热学稳定性((Tx-Tg)>195℃,高于TZN玻璃(118℃));当X=15时,样品具有较好的光谱性质:高的受激发射截面(1.25pm^2)、长的荧光寿命(

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Ce3+ ions were introduced into the Er3+/Yb3+ -codoped TeO2-WO3-ZnO glasses, and the effect of Ce3+ on the emission properties at 1.5 mu m band and the upconversion luminescence of Er3+ in the glasses was investigated. With the increasing of Ce3+ concentration, the emission intensity of Er3+ at 1.5 mu m band increases firstly, and then decreases. The optimal doping concentration of Ce3+ is about 2.07 x 10(20)/cm(3). As for the Er3+ emission at 1.5-mu m band, the fluorescence lifetime decreases a little from 3.4ms to 3.0ms, while the full width at half maximum (FWHM) hardly changes with the increase of Cc 3+ concentration. Due to the effective cross relaxation between Ce3+ and Er3+ : Er3+ (I-4(11/2)) + Ce3+ (F-2(5/2)) -> Er3+ (I-4(13/2)) + Ce3+ (F-2(7/2)), the upconversion emission intensity of Er3+ is reduced greatly. But when Ce3+ -doping concentration is too high, the other cross relaxation between Ce3+ and Er3+ : Er3+ (4I(13/2)) + Ce3+ (F-2(5/2)) -> Er3+ (I-4(15/2)) + Ce3+ (F-2(7/2)) happens, which depopulates the I-4(13/2) level of Er3+ and results in the decrease of the emission intensity and fluorescence lifetime of Er3+ at 1.5 mu m band.