Heterogeneous catalytic activity on Mn, Fe and Co-based metalloporphyrinic Solid Coordination Frameworks (SCFs)

Comunicación al congreso 1st European Conference on Metal Organic Frameworks and Porous Polymers, celebrado en Postdam del 11 al 14 de octubre de 2015

Introducing carbon diffusion barriers for uniform, high-quality graphene growth from solid sources.

Carbon diffusion barriers are introduced as a general and simple method to prevent premature carbon dissolution and thereby to significantly improve graphene formation from the catalytic transformation of solid carbon sources. A thin Al2O3 barrier inserted into an amorphous-C/Ni bilayer stack is demonstrated to enable growth of uniform monolayer graphene at 600 °C with domain sizes exceeding 50 μm, and an average Raman D/G ratio of <0.07. A detailed growth rationale is established via in situ measurements, relevant to solid-state growth of a wide range of layered materials, as well as layer-by-layer control in these systems.

Analysis on the off-state design and characterization of LIGBTs in partial SOI technology

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given. © 2014 Elsevier Ltd. All rights reserved.

Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.

A Fast-Locking Phase-Locked Loop Using a Seven-State Phase Frequency Detector

A seven-state phase frequency detector (S.S PFD) is proposed for fast-locking charge pump based phase-locked loops (CPPLLs) in this paper. The locking time of the PLL can be significantly reduced by using the seven-state PFD to inject more current into the loop filter. In this stage, the bandwidth of the PLL is increased or decreased to track the phase difference of the reference signal and the feedback signal. The proposed architecture is realized in a standard 0.35 mu m 2P4M CMOS process with a 3.3V supply voltage. The locking time of the proposed PLL is 1.102 mu s compared with the 2.347 mu s of the PLL based on continuous-time PFD and the 3.298 mu s of the PLL based on the pass-transistor tri-state PFD. There are 53.05% and 66.59% reductions of the locking time. The simulation results and the comparison with other PLLs demonstrate that the proposed seven-state PFD is effective to reduce locking time.

COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING

Chemically vapour deposited silicon on sapphire (SOS) films 0.25 mu m thick were implanted with Si-28(+) and recrystallized in solid phase by furnace annealing (FA) and IR rapid thermal annealing (RTA) in our laboratory. An improvement in crystalline quality can be obtained using both annealing procedures. After FA, it is hard to retain the intrinsic high resistivity value(10(4)-10(5) Ohm cm) observed in as-grown SOS films, so the improvement process cannot be put to practical use effectively. However, it is demonstrated that by properly adjusting the implantation and RTA conditions, significant improvements in both film quality and film autodoping can be accomplished. This work describes a modified double solid phase epitaxy process in which the intrinsic high resistivities of the as grown SOS films are retained. The mechanism of suppression of Al autodoping is discussed.

Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy

CMOS/SOS devices have lower carriers mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly results from the defects of heteroepitaxial silicon film, especially from the defects near Si-Sapphire interface. This paper describes the experiment results of CMOS/SOS devices characteristics improved by a better epitaxial silicon quality which is obtained by a modified solid phase epitaxy.

Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.

Effects of treatment in different atmosphere on Pt3Sn/C electrocatalysts for ethanol electro-oxidation

Pt3Sn/C catalyst was prepared by a modified polyol process and treated in air, H-2/Ar, and Ar atmosphere, respectively. XRD analyses indicate that all of these catalysts have face-centered cubic (fcc) crystal structure. Temperature-programmed reduction (TPR) experiments show that more Sn exists in zero-valence in the Ar-treated PtSn catalyst than in the others. Cyclic voltammetry (CV), chronoamperometry (CA) experiments, and the performance tests of direct ethanol fuel cell (DEFC) indicate that the catalytic activity of PtSn/C for ethanol oxidation was affected significantly by the chemical state of Sn in catalyst particles. The as-prepared PtSn/C gives the higher power density, while Ar-treated PtSn/C shows the lower cell performance. It seems that the multivalence Sn rather than the zero-valence Sn in the PtSn catalyst is the favorable form for ethanol oxidation. Energy dispersion X-ray analysis (EDX) of the PtSn/C-as prepared and PtSn/C (after stability test) shows the active species (platinum, tin, and oxygen) composition changed to a different extent. Further attempt to improve the catalyst stability is needed.

Preparation and characterization of PtSn/C anode electrocatalysts for direct ethanol fuel cell

Highly active PtSn/C catalyst was prepared by a polyol method. The catalyst was reduced in H-2/Ar atmosphere at 600 degreesC for 2 h in order to obtain different metallic phase. TEM images show uniform dispersion of spherical metal nanoparticles with average diameters of 1.8 and 3.9 nm for the as-prepared and treated catalysts, respectively. UV-vis spectrophotometry is employed to monitor the preparation process and the results indicate that Pt-Sn complex formed once the precursors of Pt and Sn were mixed together. The structure properties of the samples were characterized using X-ray diffraction. The results show that after reduction, the catalyst tends to form PtSn alloy. TPR experiment results show that Sn exists in multivalent state in the as-prepared sample while only zero-valence Sn was detected in the treated sample, while it could not be excluded that the multivalent tin existed in the treated sample. Cyclic voltammetry (CV) technique and single direct ethanol fuel cell (DEFC) tests indicate that the as-prepared catalyst possesses superior catalytic activity for ethanol oxidation to the treated sample. The results suggest that Pt and multivalent Sn are the active species for ethanol oxidation. (C) 2004 Elsevier B.V. All rights reserved.

Composite electrode for unitized regenerative proton exchange membrane fuel cell with improved cycle life

To improve the cycle life of unitized regenerative fuel cells (URFCs), an electrode with a composite structure has been developed. The cycle life and polarization curves for both fuel cell and electrolysis modes of URFC operation were investigated. The cycle life of URFCs was improved considerably and the performance was fairly constant during 25 cycles, which illustrates that the composite electrode is effective in sustaining the cyclic performance of URFCs. It shows the URFCs with such an electrode structure are promising for practical applications. (C) 2004 The Electrochemical Society.

Structures and electrochemical characteristics of Ti0.26Zr0.07V0.24Mn0.1Ni0.33Mox (x=0-0.1) hydrogen storage alloys

Microstructures and electrochemical properties of Ti0.26Zr0.07V0.21Mn0.1Ni0.33Mox (x=0,0.025,0.05,0.075, 0.10) electrode alloys have been investigated. The results of XRD analysis show that the alloys are mainly composed of V-based solid solution phase with body centered cubic (bcc) structure and C14 Laves phase with hexagonal structure. The addition of Mo element can imp ove the activation characteristics, maximum discharge capacity and cyclic durability for the electrode alloys

High-Performance Liquid and Solid Dye-Sensitized Solar Cells Based on a Novel Metal-Free Organic Sensitizer

A new metal-free organic sensitizer (see figure) for high-performance and applicable dye-sensitized solar cells is presented. In combination with a solvent-free ionic liquid electrolyte, a similar to 7% cell made with this sensitizer shows all excellent stability measured under thermal and light-soaking dual stress. For the first time a 4.8% efficiency is reached for all-solid-state dye-sensitized solar cells based oil all organic dye.

A zinc/p-sulfonatocalix[4]arene/phenanthroline supramolecular compound with novel (H2O)(10) water clusters

A supramolecular complex Zn-2[Cl2H8N2](2)[C28H2OS4O16][H2O](17.7) (1), has been synthesized under hydrothermal conditions, and characterized by IR spectroscopy, TG and DTA analysis, and single crystal X-ray diffraction. Unprecedented (H2O)(10) water clusters consisting of cyclic pentamer (H2O)(5) and five dangling water molecules were observed in the lattice.