Preparation of Freestanding Zn Nanocrystallites by Combined Milling at Cryogenic and Room Temperatures

The present investigation reports the preparation of freestanding nanocrystalline Zn by combined mechanical milling at cryogenic and room temperatures. The cryomilling is used as an effective means of rapid fracturing. The detailed scanning electron microscopy and transmission electron microscopy observations indicate that the minimum crystallite size is 6 +/- A 2 nm after 3 hours of cryomilling. The crystallite size increases to 30 +/- A 2 nm after 3 hours of room temperature milling of the cryomilled powder due to deformation-induced sintering. Detailed theoretical analysis allows us to obtain a diagram of size of the nanoparticles formed vs temperature to explain the experimental findings.

Realistic minimum desorption temperatures and compressor sizing for activated carbon + HFC 134a adsorption coolers

A low thermal diffusivity of adsorption beds induces a large thermal gradient across cylindrical adsorbers used in adsorption cooling cycles. This reduces the concentration difference across which a thermal compressor operates. Slow adsorption kinetics in conjunction with the void volume effect further diminishes throughputs from those adsorption thermal compressors. The problem can be partially alleviated by increasing the desorption temperatures. The theme of this paper is the determination the minimum desorption temperature required for a given set of evaporating/condensing temperatures for an activated carbon + HFC 134a adsorption cooler. The calculation scheme is validated from experimental data. Results from a parametric analysis covering a range of evaporating/condensing/desorption temperatures are presented. It is found that the overall uptake efficiency and Carnot COP characterize these bounds. A design methodology for adsorber sizing is evolved. (c) 2012 Elsevier Ltd. All rights reserved.

Bearing capacity of two interfering strip footings from lower bound finite elements limit analysis

A rigorous lower bound solution, with the usage of the finite elements limit analysis, has been obtained for finding the ultimate bearing capacity of two interfering strip footings placed on a sandy medium. Smooth as well as rough footingsoil interfaces are considered in the analysis. The failure load for an interfering footing becomes always greater than that for a single isolated footing. The effect of the interference on the failure load (i) for rough footings becomes greater than that for smooth footings, (ii) increases with an increase in phi, and (iii) becomes almost negligible beyond S/B>3. Compared with various theoretical and experimental results reported in literature, the present analysis generally provides the lowest magnitude of the collapse load. Copyright (c) 2011 John Wiley & Sons, Ltd.

Evolution of microhardness and microstructure in a cast Al–7 % Si alloy during high-pressure torsion

Disks of a cast Al-7 % Si alloy were processed through high-pressure torsion (HPT) for 1/4, 1/2, 1, 5, and 10 revolutions under a pressure of 6.0 GPa and at temperatures of 298 and 445 K. The hardness of the samples after processing was significantly higher than in the cast sample, and the hardness profiles across the samples became more uniform with increasing numbers of turns. Processing at higher temperature gave lower hardness values. Experiments were conducted to examine the effects of HPT processing on various microstructural aspects of the cast Al-7 % Si alloy such as the grain size, the Taylor factor, and the fraction of high-angle grain boundaries. The results demonstrate that there is a correlation between trends in the microhardness values and the observed microstructures.

Synthesis, microstructure and thermal expansion studies on Ca0 center dot 5+x/2Sr0 center dot 5+x/2Zr4P6-2x Si-2x O-24 system prepared by co-precipitation method

We report on the synthesis, microstructure and thermal expansion studies on Ca0 center dot 5 + x/2Sr0 center dot 5 + x/2Zr4P6 -aEuro parts per thousand 2x Si-2x O-24 (x = 0 center dot 00 to 1 center dot 00) system which belongs to NZP family of low thermal expansion ceramics. The ceramics synthesized by co-precipitation method at lower calcination and the sintering temperatures were in pure NZP phase up to x = 0 center dot 37. For x a parts per thousand yen 0 center dot 5, in addition to NZP phase, ZrSiO4 and Ca2P2O7 form as secondary phases after sintering. The bulk thermal expansion behaviour of the members of this system was studied from 30 to 850 A degrees C. The thermal expansion coefficient increases from a negative value to a positive value with the silicon substitution in place of phosphorous and a near zero thermal expansion was observed at x = 0 center dot 75. The amount of hysteresis between heating and cooling curves increases progressively from x = 0 center dot 00 to 0 center dot 37 and then decreases for x > 0 center dot 37. The results were analysed on the basis of formation of the silicon based glassy phase and increase in thermal expansion anisotropy with silicon substitution.

Tension-compression asymmetry in an extruded Mg alloy AM30: temperature and strain rate effects

The effect of strain rate, (epsilon) over dot, and temperature, T, on the tension-compression asymmetry (TCA) in a dilute and wrought Mg alloy, AM30, over a temperature range that covers both twin accommodated deformation (below 250 degrees C in compression) as well as dislocation-mediated plasticity (above 250 degrees C) has been investigated. For this purpose, uniaxial tension and compression tests were conducted at T ranging from 25 to 400 degrees C with (epsilon) over dot varying between 10(-2) and 10 s(-1). In most of the cases, the stress-strain responses in tension and compression are distinctly different; with compression responses `concaving upward,' due to {10 (1) over bar2} tensile twinning at lower plastic strains followed by slip and strain hardening at higher levels of deformation, for T below 250 degrees C. This results in significant levels of TCA at T < 250 degrees C, reducing substantially at high temperatures. At T=150 and 250 degrees C, high (epsilon) over dot leads to high TCA, in particular at T=250 degrees C and (epsilon) over dot=10 s(-1), suggesting that twin-mediated plastic deformation takes precedence at high rates of loading even at sufficiently high T. TCA becomes negligible at T=350 degrees C; however at T=400 degrees C, as (epsilon) over dot increases TCA gets higher. Microscopy of the deformed samples, carried out by using electron back-scattered diffraction (EBSD), suggests that at T > 250 degrees C dynamic recrystallization begins between accompanied by reduction in the twinned fraction that contributes to the decrease of the TCA.

Evaluation of carbon dioxide blends with isopentane and propane as working fluids for organic Rankine cycles

The main theme of this paper is to study the flammability suppression of hydrocarbons by blending with carbon dioxide, and to evaluate these mixtures as possible working fluids in organic Rankine cycle for medium temperature concentrated solar power applications. The analysis takes into account inevitable irreversibilities in the turbine, the pump, and heat exchangers. While the isopentane + CO2 mixture suffers from high irreversibility mainly in the regenerator owing to a large temperature glide, the propane + CO2 mixture performs more or less the same as pure propane albeit with high cycle pressures. In general, large temperature glides at condensing pressures extend the heat recovery into the two-phase dome, which is an advantage. However, at the same time, the shift of the pinch point towards the warm end of the regenerator is found to be a major cause of irreversibility. In fact, as the number of carbon atoms in alkanes decreases, their blend with CO2 moves the pinch point to the colder end of the regenerator. This results in lower entropy generation in the regenerator and improved cycle efficiency of propane + CO2 mixtures. With this mixture, real cycle efficiencies of 15-18% are achievable at a moderate source temperature of 573 K. Applicability for a wide range of source temperatures is found to be an added advantage of this mixture.

Surface ferromagnetism and superconducting properties of nanocrystalline niobium nitride

Nanocrystalline delta-NbNx samples have been synthesized by reacting NbCl5 and urea at three different temperatures. A comparison of their structural, magnetic, transport and thermal properties is reported in the present study. The size of the particles and their agglomeration extent increase with increasing reaction temperature. The sample prepared at 900 degrees C showed the highest superconducting transition temperature (T-c) of 16.2 K with a transition width, similar to 1.8 K, as obtained from the resistivity measurement on cold-pressed bars. Above T-c, magnetization measurements revealed the presence of surface ferromagnetism which coexists with superconductivity below T-c. Heat capacity measurements confirm superconductivity with strong electron-phonon coupling constant. The sample prepared at 800 degrees C shows a lower T-c (10 K) while that prepared at 700 degrees C exhibit no superconductivity down to the lowest temperature (3 K) measured.

Linearization of Drucker-Prager yield criterion for axisymmetric problems: implementation in lower-bound limit analysis

The linearization of the Drucker-Prager yield criterion associated with an axisymmetric problem has been achieved by simulating a sphere with the truncated icosahedron with 32 faces and 60 vertices. On this basis, a numerical formulation has been proposed for solving an axisymmetric stability problem with the usage of the lower-bound limit analysis, finite elements, and linear optimization. To compare the results, the linearization of the Mohr-Coulomb yield criterion, by replacing the three cones with interior polyhedron, as proposed earlier by Pastor and Turgeman for an axisymmetric problem, has also been implemented. The two formulations have been applied for determining the collapse loads for a circular footing resting on a cohesive-friction material with nonzero unit weight. The computational results are found to be quite convincing. (C) 2013 American Society of Civil Engineers.

Probing hemoglobin confinement inside submicron silica tubes using synchrotron SAXS and electrochemical response

The configuration of hemoglobin in solution and confined inside silica nanotubes has been studied using synchrotron small angle X-ray scattering and electrochemical activity. Confinement inside submicron tubes of silica aid in preventing protein aggregation, which is vividly observed for unconfined protein in solution. The radius of gyration (R-g) and size polydispersity (p) of confined hemoglobin was found to be lower than that in solution. This was also recently demonstrated in case of confined hemoglobin inside layered polymer capsules. The confined hemoglobin displayed a higher thermal stability with Rg and p showing negligible changes in the temperature range 25-75 degrees C. The differences in configuration between the confined and unconfined protein were reflected in their electrochemical activity. Reversible electrochemical response (from cyclic voltammograms) obtained in case of the confined hemoglobin, in contrary to the observance of only a cathodic response for the unconfined protein, gave direct indication of the differences between the residences of the electroactive heme center in a different orientation compared to that in solution state. The confined Hb showed loss of reversibility only at higher temperatures. The electron transfer coefficient (alpha) and electron transfer rate constant (k(s)) were also different, providing additional evidence regarding structural differences between the unconfined and confined states of hemoglobin. Thus, absence of any adverse effects due to confinement of proteins inside the inorganic matrices such as silica nanotubes opens up new prospects for utilizing inorganic matrices as protein ``encapsulators'', as well as sensors at varying temperatures.

Structural, electrical and dielectric properties of sputtered TiO2 films for Al/TiO2/Si capacitors

Metal-oxide semiconductor capacitors based on titanium dioxide (TiO2) gate dielectrics were prepared by RF magnetron sputtering technique. The deposited films were post-annealed at temperatures in the range 773-1173 K in air for 1 hour. The effect of annealing temperature on the structural properties of TiO2 films was investigated by X-ray diffraction and Raman spectroscopy, the surface morphology was studied by atomic force microscopy (AFM) and the electrical properties of Al/TiO2/p-Si structure were measured recording capacitance-voltage and current-voltage characteristics. The as-deposited films and the films annealed at temperatures lower than 773 K formed in the anatase phase, while those annealed at temperatures higher than 973 K were made of mixtures of the rutile and anatase phases. FTIR analysis revealed that, in the case of films annealed at 1173 K, an interfacial layer had formed, thereby reducing the dielectric constant. The dielectric constant of the as-deposited films was 14 and increased from 25 to 50 with increases in the annealing temperature from 773 to 973 K. The leakage current density of as-deposited films was 1.7 x 10(-5) and decreased from 4.7 X 10(-6) to 3.5 x 10(-9) A/cm(2) with increases in the annealing temperature from 773 to 1173 K. The electrical conduction in the Al/TiO2/p-Si structures was studied on the basis of the plots of Schottky emission, Poole-Frenkel emission and Fowler-Nordheim tunnelling. The effect of structural changes on the current-voltage and capacitance-voltage characteristics of Al/TiO2/p-Si capacitors was also discussed.

Microstructure and texture evolution during sub-transus thermomechanical processing of Ti-6Al-4V-0.1B alloy: part I. hot rolling in (alpha plus beta) phase field

In the current study, the evolution of microstructure and texture has been studied for Ti-6Al-4V-0.1B alloy during sub-transus thermomechanical processing. This part of the work deals with the deformation response of the alloy by rolling in the (alpha + beta) phase field. The (alpha + beta) annealing behavior of the rolled specimen is communicated in part II. Rolled microstructures of the alloys exhibit either kinked or straight alpha colonies depending on their orientations with respect to the principal rolling directions. The Ti-6Al-4V-0.1B alloy shows an improved rolling response compared with the alloy Ti-6Al-4V because of smaller alpha lamellae size, coherency of alpha/beta interfaces, and multiple slip due to orientation factors. Accelerated dynamic globularization for this alloy is similarly caused by the intralamellar transverse boundary formation via multiple slip and strain accumulation at TiB particles. The (0002)(alpha) pole figures of rolled Ti-6Al-4V alloy shows ``TD splitting'' at lower rolling temperatures because of strong initial texture. Substantial beta phase mitigates the effect of starting texture at higher temperature so that ``RD splitting'' characterizes the basal pole figure. Weak starting texture and easy slip transfer for Ti-6Al-4V-0.1B alloy produce simultaneous TD and RD splittings in basal pole figures at all rolling temperatures.

Mitigation of lower order harmonics in a grid-connected single-phase PV inverter

In this paper, a simple single-phase grid-connected photovoltaic (PV) inverter topology consisting of a boost section, a low-voltage single-phase inverter with an inductive filter, and a step-up transformer interfacing the grid is considered. Ideally, this topology will not inject any lower order harmonics into the grid due to high-frequency pulse width modulation operation. However, the nonideal factors in the system such as core saturation-induced distorted magnetizing current of the transformer and the dead time of the inverter, etc., contribute to a significant amount of lower order harmonics in the grid current. A novel design of inverter current control that mitigates lower order harmonics is presented in this paper. An adaptive harmonic compensation technique and its design are proposed for the lower order harmonic compensation. In addition, a proportional-resonant-integral (PRI) controller and its design are also proposed. This controller eliminates the dc component in the control system, which introduces even harmonics in the grid current in the topology considered. The dynamics of the system due to the interaction between the PRI controller and the adaptive compensation scheme is also analyzed. The complete design has been validated with experimental results and good agreement with theoretical analysis of the overall system is observed.

Analysis of size quantization and temperature effects on the threshold voltage of thin silicon film double-gate metal-oxide-semiconductor field-effect transistor (MOSFET)

In this paper, we analyze the combined effects of size quantization and device temperature variations (T = 50K to 400 K) on the intrinsic carrier concentration (n(i)), electron concentration (n) and thereby on the threshold voltage (V-th) for thin silicon film (t(si) = 1 nm to 10 nm) based fully-depleted Double-Gate Silicon-on-Insulator MOSFETs. The threshold voltage (V-th) is defined as the gate voltage (V-g) at which the potential at the center of the channel (Phi(c)) begins to saturate (Phi(c) = Phi(c(sat))). It is shown that in the strong quantum confinement regime (t(si) <= 3nm), the effects of size quantization far over-ride the effects of temperature variations on the total change in band-gap (Delta E-g(eff)), intrinsic carrier concentration (n(i)), electron concentration (n), Phi(c(sat)) and the threshold voltage (V-th). On the other hand, for t(si) >= 4 nm, it is shown that size quantization effects recede with increasing t(si), while the effects of temperature variations become increasingly significant. Through detailed analysis, a physical model for the threshold voltage is presented both for the undoped and doped cases valid over a wide-range of device temperatures, silicon film thicknesses and substrate doping densities. Both in the undoped and doped cases, it is shown that the threshold voltage strongly depends on the channel charge density and that it is independent of incomplete ionization effects, at lower device temperatures. The results are compared with the published work available in literature, and it is shown that the present approach incorporates quantization and temperature effects over the entire temperature range. We also present an analytical model for V-th as a function of device temperature (T). (C) 2013 AIP Publishing LLC.

Probing disorder and transport properties in polypyrrole thin-film devices by impedance and Raman spectroscopy

In the present study, impedance and Raman spectroscopy are adopted to probe the nature and extent of disorder to correlate with transport properties in doped polypyrrole (PPy) thin-film devices, synthesized electrochemically at different temperatures. A comparative study of the impedance spectroscopy is performed on PPy devices by both experimental and simulation approach with varying extent of disorder. The impedance measurements of PPy devices are well described by introducing a constant phase element (CPE) (Q) in modified RQ circuit, which accounts for frequency dependence of dielectric response. However, for the PPy grown at lower temperature, an equivalent circuit consisting of two such RQ elements in series is used for successful modelling of the impedance results, which accounts for the depletion region near the electrode. Raman spectroscopy and the de-convoluted spectra are successfully studied to probe the variation in C=C bond stretching and distribution of conjugation length, which relates to disorder in PPy films and the interpretation is well correlated to the impedance results.