Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

Fabrication of a novel silica PLC hybrid integrated triplexer

A new-style silica planar lightwave circuit (PLC) hybrid integrated triplexer, which can demultiplex 1490-nm download data and 1550-nm download analog signals, as well as transmit 1310-nm upload data, is presented. It combines SiO2 arrayed waveguide gratings (AWGs) with integrated photodetectors (PDs) and a high performance laser diode (LD). The SiO2 AWGs realize the three-wavelength coarse wavelength-division multiplexing (CWDM). The crosstalk is less than 40 dB between the 1490- and 1550-nm channels, and less than 45 dB between 1310- and 1490- or 1550-nm channels. For the static performances of the integrated triplexer, its upload output power is 0.4 mW, and the download output photo-generated current is 76 A. In the small-signal measurement, the upstream 3-dB bandwidth of the triplexer is 4 GHz, while the downstream 3-dB bandwidths of both the analog and digital sections reach 1.9 GHz.

Tunable parametric fluorescence using a single crystal

In this paper, we investigate the mechanism of tunable parametric superfluorescence (PS) based on the second harmonic generation and parametric processes taking place in the same nonlinear crystal (BBO). The tunable spectra of PS has been generated between 480 nm and 530 nm, which is pumped by the second-harmonic from the high-power Ti: sapphire laser system at 1 kHz repetition rate. We present the generation mechanism of PS theoretically and simulate the process of PS ring using the amplification transfer function. The experiment and the theory show that PS will appear when the phase matching angle for second-harmonic generation is close to the optimal pump angle for optical parametric generation, and then the tunable spectra of PS are generated by slightly adjusting the crystal angle. The result provides a theoretical basis for controlling the generation of PS and quantum entanglement states, which is of great significance for the development of quantum imaging, quantum communications and other applieations.

Design of side-pumped Nd : YAG lasers

Design of the typical laser diode side-pumped Nd:YAG rod system has been discussed using the conventional ray tracing method in this paper. Firstly introduce two basic matrices, refractional and translational matrix, described the transmission of nonparaxial light ray in the medium without concerning the absorption of light. And then, using those matrices, analyze the distribution of pump light in the crystal respectively under the condition of directly pumped system and indirectly pumped system with a cylindrical quartz rod as focusing lens. From the result of simulation, we compare the advantage and disadvantage of the two pumped method, and mainly consider how to select the diameter of the focus lens and cooling tube, indicate the effect of deionized water and cooling tube have on the pump light distribution in the active material. At last, make some conclusions about the side-pumped Nd:YAG laser system.

Lasing of CdSSe quantum dots in glass spherical microcavity

Glass spherical microcavities containing CdSSe semiconductor quantum dots (QDs) of a few microns in diameter are fabricated using a physical method. When a single glass microspherical cavity is excited by a laser beam at room temperature, very strong and sharp whispering gallery modes are shown on the background of PL spectra of CdSSe QDs, which confirms that coupling between the optical emission of embedded QDs and spherical cavity modes is realized. For a glass microsphere only 4.6 mum in diameter, it was found that the energy separation is nearly up to 26 nm both for TE and TM modes. With the increasing excitation intensity, the excitation intensity dependence of the emission intensity is not linear in the double-logarithmic scale. Above the threshold value, the linewidths of resonance modes become narrower. The lasing behavior is achieved at relatively low excitation intensity at room temperature. High optical stability and low threshold value make this optical system promising in visible microlaser applications. (C) 2002 Elsevier Science B.V. All rights reserved.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

In this paper, In0.5Ga0.5As quantum dots are fabricated on GaAs (100) and (n11)A/B (n = 3, 5) substrates by molecular beam epitaxy. Atomic force microscopy shows that the quantum dots on each oriented substrate are different in size, shape and distribution. In addition, photoluminescence spectra from these quantum dots are different in emission peak position, line width and integrated intensity. Auger electron spectra demonstrate that In concentration is larger near the surface than inside quantum dots, suggesting the occurrence of surface segregation effect during the growth of InGaAs dots. The surface segregation effect is found to be related to substrate orientation. (C) 2000 Elsevier Science B.V. All rights reserved.

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.

Interface delamination of the thermal barrier coating subjected to local heating

To investigate the possible failure modes of the thermal barrier coating (TBC) used to protect the scramjet combustion chamber, the local heating via laser beam irradiation was utilized to simulate the service condition of high thermal flux and high temperature gradient. Firstly, the experimental method and process were described and the typical fracture morphology of the TBC under test were provided. Then, the theoretical and finite element modeling were carried out to study the temperature, deformation and stresses of the specimen when the top ceramic coat was subjected to local heating, and to demonstrate the mechanism on the failure of the TBC. It is revealed that the interface delamination shall appear and ultimately lead to the failure of the TBC under such thermal loading of local quick heating. According to the outcome of this study, the driving force of the interface delamination is influenced greatly by the key structural parameters and performance matching. Moreover, by utilizing the rules of the effects of these parameters on the fracture driving force, there is some possibility for the designer to optimize the performances of the TBC.

Modal correction for fiber-coupling efficiency in free-space optical communication systems through atmospheric turbulence

High-speed free-space optical communication systems have recently used fiber-optical components. The coupling efficiency with which the received laser beam can be coupled into a single-mode fiber is noticeably limited by atmospheric turbulence due to the degradation of its spatial coherence. Fortunately, adaptive optics (AO) can alleviate this limitation by partially correcting the turbulence-distorted wavefront. The coupling efficiency improvement provided by Zernike modal AO correction is numerically evaluated. It is found that the first 3-20 corrected polynomials can considerably improve the fiber-coupling efficiency. The improvement brought by AO is compared with that brought by a coherent fiber array. Finally, a hybrid technique that integrates AO and a coherent fiber array is proposed. Results show that the hybrid technique outperforms each of the two above-mentioned techniques. (C) 2009 Elsevier GmbH. All rights reserved.

Production of EUV power with SECRAL

The high power EUV source is one of key issues in the development of EUV lithography which is considered to be the most promising technology among the next generation lithography. However neither DPP nor LPP seems to meet the requirements of the commercial high-volume product. Insufficiency of DPP and LPP motivate the investigation of other means to produce the EUV radiation required in lithography. ECR plasma seems to be one of the alternatives. In order to investigate the feasibility of ECR plasma as a EUV light source, the EUV power emitted by SECRAL was measured. A EUV power of 1.03W in 4 pi sr solid angle was obtained when 2000W 18GHz rf power was launched, and the corresponding CE was 0.5%. Considering that SECRAL is designed to produce very high charge state ions, this very preliminary result is inspiring. Room-temperature ECR plasma and Sn plasma are both in the planned schedule.

大功率电子加速器的预研与束流传输的研究

电子束辐照烟道气脱除502和NOx技术是一项将辐射物理和辐射化学紧密结合的高新技术。该项技术自1970年被提出后，经历了20多年的逐步发展，已进入了工业装置阶段。目前，在美国、德国、日本、波兰和我国的成都热电厂等处建立了中试厂和工业示范厂。当前在国际上，对一该项目的关键部件电子加速器有两种方案：即日新公司的高压变压器方案和以俄罗斯新西伯利亚核物理研究所的ElV型加速器为代表的谐振变压器型。根据目前国内的实际状况和满足我所及在兰州各研究所的物理实验的需要，中利4院近代物理所在已有技术力量的基础上，并在国家计委的大力支持下，立项研制大功率谐振变压器型电子加速器。这篇论文首先对1.5Mev/300mA三相谐振变压器型电子加速器的高压电极表面电场强度、分布电容、电感、三相谐振频率等作了预研。在此基础上，着重对强流静电加速管轴上电位和电场分布、平面电子枪的实际电流密度、电极膜孔透镜对束流的聚焦性能、加速管中电子轨迹和出射斜率、球面阴极的电子光学特性等作了详细的计算和分析，从计算得到的结果来看，所设计的电场能够满足束流传输的要求。另外，还对加速管非均匀场对电子负载的抑制作用，离子反轰阴极作了初步研究。论文的另一个重点是研究了静电加速管中强流电子束的空间电荷效应。根据实际情况，合理地建立了物理模型。并对模型上的4个不同位置的束内外径向电位分布、空间电荷对轴＿L电位的影响，以及空间电荷力对束流传输的影响等进行了详尽的理论计算和分析。在对轴上电场分布进行分析时，发现可以将电场沿轴向分为3个区域，并认真对每个区域的作用作了详细的分析说明。特别指出了，强流静电加速管的设计关键在加速管的前端，与弱流加速管相比，前者的变化幅度要大得多。论文最后对大功率电子加速器部件的加工和三相谐振变压器高压发生器模拟实验结果给予了介绍和分析。

Capillary array electrophoresis with confocal fluorescence rotary scanner

A capillary array electrophoresis system with rotary corifocal fluorescence scanner was reported. High speed direct current rotary motor combined with a rotary encoder and the reflection mirror has been designed to direct exactly the excitation laser beam. to the array of capillaries, which are symmetrically distributed around the motor. The rotary encoder is introduced to accurately orient the position of each capillary and its output signal triggers the data acquiring system to record. the fluorescence signal corresponding to each capillary. Separations of several amino acids are demonstrated by eight-channel capillary array electrophoresis built by ourselves.

Tetrahydrothiophenium-based ionic liquids for high efficiency dye-sensitized solar cells

Binary melts of S-ethyltetrahydrothiophenium iodide and dicyanoamide (or tricyanomethide) have been employed for dye-sensitized solar cells with high power conversion efficiencies up to 6.9% under the illumination of AM 1.5G full sunlight. We have further shown that the transport of triiodide in ionic liquids with high iodide concentration is viscosity-dependent in terms of a physical diffusion coupled bond exchange mechanism apart from the simple physical diffusion.

High efficiency and stable dye-sensitized solar cells with an organic chromophore featuring a binary pi-conjugated spacer

We employed a binary spacer of orderly conjugated 3,4-ethyldioxythiophene and thienothiophene to construct a wide-spectral response organic chromophore for dye-sensitized solar cells, exhibiting a high power conversion efficiency of 9.8% measured under irradiation of 100 mW cm(-2) air mass 1.5 global (AM1.5G) sunlight and an excellent stability.