The modulation of radiation in an electron-positron plasma

The modulational instability of a large-amplitude, linearly polarized electromagnetic wave propagating in an electron-positron plasma is considered, including the combined effect of relativistic mass variation of the plasma particles, harmonic generation, and the non-resonant, finite-frequency electrostatic density perturbations, all caused by the large-amplitude radiation field. The radiation from many strong sources, such as AGN and pulsars, has been observed to vary over a host of time-scales. It is possible that the extremely rapid variations in the non-thermal continuum of AGN, as well as in the non-thermal radio radiation from pulsars, can be accounted for by the modulational instabilities to which radiation may be subjected during its propagation out of the emission region.

Electrical switching and thermal studies on bulk Ge-Te-Bi glasses

Bulk, melt quenched Ge18Te82-xBix glasses (1 <= x <= 4) have been found to exhibit memory type electrical switching behavior, which is in agreement with the lower thermal diffusivity values of Ge-Te-Bi samples. A linear variation in switching voltages (V-th) has been found in these samples with increase in thickness which is consistent with the memory type electrical switching. Also, the switching voltages have been found to decrease with an increase in temperature which happens due to the decrease in the activation energy for crystallization at higher temperatures. Further. V-th of Ge18Te82-xBix glasses have been found to decrease with the increase in Bi content, indicating that in the Ge-Te-Bi system, the resistivity of the additive has a stronger role to play in the composition dependence of V-th, in comparison with the network connectivity and rigidity factors. In addition, the composition dependence of crystallization activation energy has been found to show a decrease with an increase in Bi content, which is consistent with the observed decrease in the switching voltages. X-ray diffraction studies on thermally crystallized samples reveal the presence of hexagonal Te, GeTe, Bi2Te3 phases, suggesting that bismuth is not taking part in network formation to a greater extent, as reflected in the variation of switching voltages with the addition of Bi. SEM studies on switched and un-switched regions of Ge-Te-Bi samples indicate that there are morphological changes in the switched region, which can be attributed to the formation of the crystalline channel between two electrodes during switching. (C) 2010 Elsevier B.V. All rights reserved.

Geometry and quadratic nonlinearity of charge transfer complexes in solution using depolarized hyper-Rayleigh scattering

We report large quadratic nonlinearity in a series of 1:1 molecular complexes between methyl substituted benzene donors and quinone acceptors in solution. The first hyperpolarizability, beta(HRS), which is very small for the individual components, becomes large by intermolecular charge transfer (CT) interaction between the donor and the acceptor in the complex. In addition, we have investigated the geometry of these CT complexes in solution using polarization resolved hyper-Rayleigh scattering (HRS). Using linearly (electric field vector along X direction) and circularly polarized incident light, respectively, we have measured two macroscopic depolarization ratios D = I-2 omega,I-X,I-X/I-2 omega,I-Z,I-X and D' = I-2 omega,I-X,I-C/I-2 omega,I-Z,I-C in the laboratory fixed XYZ frame by detecting the second harmonic scattered light in a polarization resolved fashion. The experimentally obtained first hyperpolarizability, beta(HRS), and the value of macroscopic depolarization ratios, D and D', are then matched with the theoretically deduced values from single and double configuration interaction calculations performed using the Zerner's intermediate neglect of differential overlap self-consistent reaction field technique. In solution, since several geometries are possible, we have carried out calculations by rotating the acceptor moiety around three different axes keeping the donor molecule fixed at an optimized geometry. These rotations give us the theoretical beta(HRS), D and D' values as a function of the geometry of the complex. The calculated beta(HRS), D, and D' values that closely match with the experimental values, give the dominant equilibrium geometry in solution. All the CT complexes between methyl benzenes and chloranil or 1,2-dichloro-4,5-dicyano-p-benzoquinone investigated here are found to have a slipped parallel stacking of the donors and the acceptors. Furthermore, the geometries are staggered and in some pairs, a twist angle as high as 30 degrees is observed. Thus, we have demonstrated in this paper that the polarization resolved HRS technique along with theoretical calculations can unravel the geometry of CT complexes in solution. (C) 2011 American Institute of Physics. doi:10.1063/1.3514922]

Ab initio molecular orbital calculations on ion pair-water complexes of metal halides and oxides

Ab initio MO calculations are performed on a series of ion-molecular and ion pair-molecular complexes of H2O + MX (MX = LiF, LiCl, NaCl, BeO and MgO) systems. BSSE-corrected stabilization energies, optimized geometrical parameters, internal force constants and harmonic vibrational frequencies have been evaluated for all the structures of interest. The trends observed in the geometrical parameters and other properties calculated for the mono-hydrated contact ion pair complexes parallel those computed for the complexes of the individual ions. The bifurcated structures are found to be saddle points with an imaginary frequency corresponding to the rocking mode of water molecules. The solvent-shared ion pair complexes have high interaction energies. Trends in the internal force constant and harmonic frequency values are discussed in terms of ion-molecular and ion-pair molecular interactions.

Ground State of N Harmonically Bound Anyons in a Magnetic Field

The properties of the ground state of N anyons in an external magnetic field and a harmonic oscillator potential are computed in the large-N limit using the Thomas-Fermi approximation. The number of level crossings in the ground state as a function of the harmonic frequency, the strength and the direction of the magnetic field and N are also studied.

Anharmonic Effects in Germanium

A precise X-ray investigation is carried out to probe the lowest-order anharmonic contribution of the atomic potential of the germanium atom. A total number of 1052 reflections (h + k + l = 4n and 4n +/- 1) are precisely measured at room temperature using a spherical single crystal of germanium and using a Nonius CAD-4 X-ray diffractometer with crystal monochromatized MoKalpha radiation. A least-square refinement program is used to refine the harmonic and anharmonic thermal parameters of the crystal. The refinement gives beta(Ge) = (-0.749 +/- 1.79) x 10-(16) J nm-3 with B(Ge) = (0.528 +/- 0.004) x 10(-2) nm2. The reliability index (R) amounts to 1.71% for germanium.

Linear electro‐optic dispersion in (‐)‐2‐(α‐methylbenzylamino)‐5‐nitropyridine single crystals

The variation of the linear electro-optic effect in (-)-2-(alpha-methylbenzylamino)-5-nitropyridine with the wavelength of the incident light at room temperature has been measured. The reduced half-wave voltages have been found to have the values 2.1, 2.8, and 6.0 kV at 488, 514.5, and 632.8 nm respectively and the corresponding values of the linear electro-optic coefficient have been evaluated.;The interpretation of the results in terms of the structures of the molecule and the crystal is discussed. The thermal variation of the birefringence has also been investigated and the coefficient for the temperature variation of the refractive index difference is found to have the value (d Delta n/dT)=9.3X10(-5) K-1.

Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Polycrystalline strontium titanate (SrTiO3) films were prepared by a pulsed laser deposition technique on p-type silicon and platinum-coated silicon substrates. The films exhibited good structural and dielectric properties which were sensitive to the processing conditions. The small signal dielectric constant and dissipation factor at a frequency of 100 kHz were about 225 and 0.03 respectively. The capacitance-voltage (C-V) characteristics in metal-insulator-semiconductor structures exhibited anomalous frequency dispersion behavior and a hysteresis effect. The hysteresis in the C-V curve was found to be about 1 V and of a charge injection type. The density of interface states was about 1.79 x 10(12) cm(-2). The charge storage density was found to be 40 fC mu m(-2) at an applied electric field of 200 kV cm(-1). Studies on current-voltage characteristics indicated an ohmic nature at lower voltages and space charge conduction at higher voltages. The films also exhibited excellent time-dependent dielectric breakdown behavior.

Soft-chemical routes to synthesis of solid oxide materials

We describe three different families of metal oxides, viz., (i) protonated layered perovskites, (ii) framework phosphates of NASICON and KTiOPO4 (KTP) structures and (iii) layered and three-dimensional oxides in the H-V-W-O system, synthesized by 'soft-chemical' routes involving respectively ion-exchange, redox deinteracalation and acid-leaching from appropriate parent oxides. Oxides of the first family, HyA2B3O10(A = La/Ca; B = Ti/Nb), exhibit variable Bronsted acidity and intercalation behaviour that depend on the interlayer structure. V2(PO4)3 prepared by oxidative deintercalation from Na3V2(PO4)3 is a new host material exhibiting reductive insertion of lithium/hydrogen, while K0.5Nb0.5 M0.5OPO4(M = Ti, V) are novel KTP-like materials exhibiting second harmonic generation of 1064 nm radiation. HxVxW1-xO3 for x = 0.125 and 0.33 possessing alpha-MoO3 and hexagonal WO3 structures, prepared by acid-leaching of LiVWO6, represent functionalized oxide materials exhibiting redox and acid-base intercalation reactivity.

Soft-chemical synthesis of new non-linear optical materials, K0.5M0.5Ti0.5OPO4(M = Nb, Ta),related to KTiOPO4

Soft-chemical oxidation of KTiOPO4-like KM(0.5)(V)Ti(0.5)(III)OPO(4) (M = Nb, Ta) using chlorine in CHCl3 is accompanied by partial deintercalation of potassium, yielding K(0.5)MV(0.5)Ti(0.5)(IV)OPO(4) compounds which are new non-linear optical materials that exhibit efficient second-harmonic generation of 1064 nm radiation, as does KTiOPO4.

Variation of surface flashover voltage in SF6 with pressure

Surface flashover characteristics of solid spacers in a rod-plane configuration have been investigated in SF6, at pressures to 400 kPa, for switching impulse voltages to determine the effect of spacer, spacer materials and polarity of applied impulses. The effect of spacer material on the flashover voltage is not significant. For negative polarity impulses, the influence of the spacer is also insignificant. But for positive polarity impulses, at pressures < 200 kPa, the spacer efficiency becomes > 1.0. On the other hand, at pressures > 200 kPa, the presence of spacer drastically reduces the flashover voltage of the system. At about atmospheric pressure also, the spacer efficiency in air has been found to be > 1.0, with the same electrode geometry.

A study of partial discharge characteristics in oil impregnated pressboard insulation

An attempt has been made to study the effect of time and test procedure on the behaviour of partial discharge (PD) pulses causing failure of oil-pressboard system under power frequency voltages using circular disc shaped samples and uniform field electrodes. Weibull statistics have been used to handle the large amount of PD data. The PD phenomena has been found to be stress and time dependent. On the basis of stress level, three different regions are identified and in one of the regions, the rate of deterioration of the sample is at a maximum. The work presents some interesting features of Weibull parameters as related to the condition of insulation studied in addition to its usual PD characteristics

Linear electro-optic effect and temperature coefficient of birefringence in 4-nitro-4script-methylbenzylidene aniline single crystals

A study of the linear electro?optic effect in single crystals of the organic compound, 4?nitro�4??methylbenzylidene aniline is reported. The reduced half?wave voltages have been found to have values 2.8, 1.3, and 1.1 kV at 632.8, 514.5, and 488.0 nm, respectively and the corresponding values of the largest linear electro?optic coefficient have been calculated. The thermal variation of the birefringence has also been investigated and the temperature variation of the refractive index difference is found to have the value, d?n/dT = 15.8 × 10?5 K?1.

Growth and characterization of single crystal cored fibers of organic nonlinear optical materials

The recent development of several organic materials with large nonlinear susceptibilities, high damage threshold and low melting points encouraged researchers to employ these materials in fiber form to efficiently couple diode laser pumps and obtain enhanced second harmonic generation (SHG). In this paper we report the growth of single crystal cored fibers of 4-nitro-4'-methylbenzylidene aniline, ethoxy methoxy chalcone and (-)2-((alpha) -methylbenzylamino)-5- nitropyridine by inverted Bridgman-Stockbarger technique. The fibers were grown in glass capillaries with varying internal diameters and lengths and were characterized using x-ray and polarizing microscope techniques. The propagation loss at 632.8 nm and 1300 nm were measured and SHG was studied using 1064 nm pump.

A Comparative Study of Electrical Switching Behavior of Certain Tellurium based Chalcogenide Thin Films for Phase Change Memory (PCM) Applications

This work describes the electrical switching behavior of three telluride based amorphous chalcogenide thin film samples, Al-Te, Ge-Se-Te and Ge-Te-Si. These amorphous thin films are made using bulk glassy ingots, prepared by conventional melt quenching technique, using flash evaporation technique; while Al-Te sample has been coated in coplanar electrode geometry, Ge-Se-Te and Ge-Te-Si samples have been deposited with sandwich electrodes. It is observed that all the three samples studied, exhibit memory switching behavior in thin film form, with Ge-Te-Si sample exhibiting a faster switching characteristic. The difference seen in the switching voltages of the three samples studied has been understood on the basis of difference in device geometry and thickness. Scanning electron microscopic image of switched region of a representative Ge15Te81Si4 sample shows a structural change and formation of crystallites in the electrode region, which is responsible for making a conducting channel between the two electrodes during switching.