Measuring temporal fluctuation on femtosecond scale in a random medium

We report an observation of femtosecond optical fluctuations of transmitted light when a coherent femtosecond pulse propagates through a random medium. They are a result of random interference among scattered waves coming from different trajectories in the time domain. Temporal fluctuations are measured by using cross-correlated frequency optical gating. It is shown that a femtosecond pulse will be broadened and distorted in pulse shape while it is propagating in random medium. The real and imaginary components of transmitted electric field are also distorted severely. The average of the fluctuated transmission pulses yields a smooth profile, probability functions show good agreement with Gaussian distribution. (c) 2007 Elsevier B.V. All rights reserved.

Effects of coherence on anisotropic electromagnetic Gaussian-Schell model beams on propagation

An analytical formula for the cross-spectral density matrix of the electric field of anisotropic electromagnetic Gaussian-Schell model beams propagating in free space is derived by using a tensor method. The effects of coherence on those beams are studied. It is shown that two anisotropic stochastic electromagnetic beams that propagate from the source plane z = 0 into the half-space z > 0 may have different beam shapes (i.e., spectral density) and states of polarization in the half-space, even though they have the same beam shape and states of polarization in the source plane. This fact is due to a difference in the coherence properties of the field in the source plane. (C) 2007 Optical Society of America.

Part I. Approximate Hartree-Fock wavefunctions one-electron properties and electronic structure of the water molecule. Part II. Perturbation-variational calculation of the nuclear spin-spin isotope coupling constant in HD

Part I

Several approximate Hartree-Fock SCF wavefunctions for the ground electronic state of the water molecule have been obtained using an increasing number of multicenter s, p, and d Slater-type atomic orbitals as basis sets. The predicted charge distribution has been extensively tested at each stage by calculating the electric dipole moment, molecular quadrupole moment, diamagnetic shielding, Hellmann-Feynman forces, and electric field gradients at both the hydrogen and the oxygen nuclei. It was found that a carefully optimized minimal basis set suffices to describe the electronic charge distribution adequately except in the vicinity of the oxygen nucleus. Our calculations indicate, for example, that the correct prediction of the field gradient at this nucleus requires a more flexible linear combination of p-orbitals centered on this nucleus than that in the minimal basis set. Theoretical values for the molecular octopole moment components are also reported.

Part II

The perturbation-variational theory of R. M. Pitzer for nuclear spin-spin coupling constants is applied to the HD molecule. The zero-order molecular orbital is described in terms of a single 1s Slater-type basis function centered on each nucleus. The first-order molecular orbital is expressed in terms of these two functions plus one singular basis function each of the types e^-r/r and e^-r ln r centered on one of the nuclei. The new kinds of molecular integrals were evaluated to high accuracy using numerical and analytical means. The value of the HD spin-spin coupling constant calculated with this near-minimal set of basis functions is J_HD = +96.6 cps. This represents an improvement over the previous calculated value of +120 cps obtained without using the logarithmic basis function but is still considerably off in magnitude compared with the experimental measurement of J_HD = +43 0 ± 0.5 cps.

Generation of double pulses in-line by using reflective Dammann gratings

Doubled femtosecond laser pulses in-line are needed in the collinear pump-probe technique, collinear second harmonic generation frequency-resolved optical gating (SHG FROG) and the spectral phase interferometry for direct electric-field reconstruction (SPIDER), etc. Normally, it is generated by using a Michelson's structure. In this paper, we proposed a novel structure with two-layered reflective Dammann gratings and the reflective mirrors to generate doubled femtosecond laser pulses in line without transmission optical elements. Angular dispersion and spectral spatial walk-off are both compensated. In addition, this structure can also compress the positive chirped pulse, which cannot be realized with a Michelson's structure. By adopting triangular grating and blazed gratings, the efficiency of the system would in principle be increased as the Michelson's scheme. Experiments demonstrated that this method should be an alternative approach for generation of the double compressed pulses of femtosecond laser for practical applications. (c) 2006 Elsevier GmbH. All rights reserved.

Phase mapping of domain kinetics in lithium niobate by digital holographic interferometry

The phase mapping of domain kinetics under the uniform steady-state electric field is achieved and investigated in the LiNbO3 crystals by digital holographic interferometry. We obtained the sequences of reconstructed three-dimensional and two-dimensional wave-field phase distributions during the electric poling in the congruent and near stoichiometric LiNbO3 crystals. The phase mapping of individual domain nucleation and growth in the two crystals are obtained. It is found that both longitudinal and lateral domain growths are not linear during the electric poling. The phase mapping of domain wall motions in the two crystals is also obtained. Both the phase relaxation and the pinning-depinning mechanism are observed during the domain wall motion. The residual phase distribution is observed after the high-speed domain wall motion. The corresponding analyses and discussions are proposed to explain the phenomena.

I. Fundamental limitations in microelectronics. II. Power Schottky diode design and comparison with the junction diode. III. Permittivity of strontium titanate

Part I

The physical phenomena which will ultimately limit the packing density of planar bipolar and MOS integrated circuits are examined. The maximum packing density is obtained by minimizing the supply voltage and the size of the devices. The minimum size of a bipolar transistor is determined by junction breakdown, punch-through and doping fluctuations. The minimum size of a MOS transistor is determined by gate oxide breakdown and drain-source punch-through. The packing density of fully active bipolar or static non-complementary MOS circuits becomes limited by power dissipation. The packing density of circuits which are not fully active such as read-only memories, becomes limited by the area occupied by the devices, and the frequency is limited by the circuit time constants and by metal migration. The packing density of fully active dynamic or complementary MOS circuits is limited by the area occupied by the devices, and the frequency is limited by power dissipation and metal migration. It is concluded that read-only memories will reach approximately the same performance and packing density with MOS and bipolar technologies, while fully active circuits will reach the highest levels of integration with dynamic MOS or complementary MOS technologies.

Part II

Because the Schottky diode is a one-carrier device, it has both advantages and disadvantages with respect to the junction diode which is a two-carrier device. The advantage is that there are practically no excess minority carriers which must be swept out before the diode blocks current in the reverse direction, i.e. a much faster recovery time. The disadvantage of the Schottky diode is that for a high voltage device it is not possible to use conductivity modulation as in the p i n diode; since charge carriers are of one sign, no charge cancellation can occur and current becomes space charge limited. The Schottky diode design is developed in Section 2 and the characteristics of an optimally designed silicon Schottky diode are summarized in Fig. 9. Design criteria and quantitative comparison of junction and Schottky diodes is given in Table 1 and Fig. 10. Although somewhat approximate, the treatment allows a systematic quantitative comparison of the devices for any given application.

Part III

We interpret measurements of permittivity of perovskite strontium titanate as a function of orientation, temperature, electric field and frequency performed by Dr. Richard Neville. The free energy of the crystal is calculated as a function of polarization. The Curie-Weiss law and the LST relation are verified. A generalized LST relation is used to calculate the permittivity of strontium titanate from zero to optic frequencies. Two active optic modes are important. The lower frequency mode is attributed mainly to motion of the strontium ions with respect to the rest of the lattice, while the higher frequency active mode is attributed to motion of the titanium ions with respect to the oxygen lattice. An anomalous resonance which multi-domain strontium titanate crystals exhibit below 65°K is described and a plausible mechanism which explains the phenomenon is presented.

Análise da tectônica de colocação de diques cretácicos na região de São Sebastião, SP

O trabalho foi desenvolvido no litoral norte do estado de São Paulo, onde ocorrem boas exposições de rochas intrusivas da porção meridional do Enxame de Diques da Serra do Mar, de idade eocretácica. O objetivo principal da dissertação é caracterizar os regimes tectônicos associados à colocação e à deformação de diques máficos na área de São Sebastião (SP) e sua distribuição espacial, a partir de interpretações de imagens de sensores remotos, análise de dados estruturais de campo e descrição petrográfica das rochas ígneas. A área apresenta grande complexidade no tocante ao magmatismo, uma vez que ocorrem diques de diabásios toleítico e alcalino, lamprófiro e rochas alcalinas félsicas como fonolitos, traquitos e sienitos, estes sob a forma diques, sills e plugs. Os diabásios toleíticos tem idades em torno 134 Ma, correlatas com o início do rifteamento sul-atlântico, enquanto que as rochas alcalinas datam de 86 Ma e estão relacionadas com um magmatismo intraplaca posterior. Os lineamentos estruturais orientam-se majoritariamente na direção ENE-WSW, paralela às foliações metamórficas e zonas de cisalhamento observadas no campo e descritas na literatura, referentes ao Domínio Costeiro da Faixa Ribeira. Os diques se orientam na direção NE-SW, com azimute semelhante porém ângulos de mergulho discordantes da foliação em grande parte da área, onde as foliações são de baixo ângulo. Um segundo conjunto de lineamentos orientado NW-SE ocorre como um importante conjunto de fraturas que cortam tanto as rochas do embasamento proterozóico quanto as rochas alcalinas neocretácicas. Diques com esta orientação são escassos. Um terceiro conjunto NNE-SSW ocorre na porção oeste da área, associado à presença de diques de diabásio que por vezes mostram indicadores de movimentação sinistral. A análise cinemática dos diques mostra um predomínio de distensão pura durante sua colocação, com um tensor de compressão mínima de orientação NW-SE, ortogonal ao principal trend dos diques. Componentes direcionais, por vezes ambíguas, são comumente observadas, com um discreto predomínio de componente sinistral. O mesmo padrão cinemático é observado para os diques toleíticos e para os alcalinos, sugerindo que o campo de tensões local pouco variou durante o Cretáceo. Embora o embasamento não tenha sido diretamente reativado durante a colocação dos diques, sua anisotropia pode ter controlado de certa forma a orientação do campo de tensões local durante o Cretáceo. Os mapas geofísicos da bacia de Santos existentes na literatura sugerem certo paralelismo entre as estruturas observadas na área de estudo e aquelas interpretadas na bacia. As estruturas NNE-SSW são paralelas ao trend das sub-bacias e ao gráben de Merluza, enquanto que as estruturas NW-SE são paralelas a zonas de transferência descritas na literatura.

数值模拟探针诱导表面等离子体共振耦合纳米光刻

采用有损耗介质和色散介质的二维时域有限差分方法,数值模拟了以光波长514.5 nm的p偏振基模高斯光束为入射光源,激发Kretschmann型表面等离子体共振,并通过探针的局域场增强效应实现纳米光刻的新方法——探针诱导表面等离子体共振耦合纳米光刻.分别就探针与记录层的间距以及探针针尖大小,模拟分析了不同情况下探针的局域场增强效应和记录层表面的相对电场强度振幅分布.结果表明,探针工作在接触模式时,探针的局域场增强效应最明显,记录层表面的相对电场强度振幅的对比度最大;当探针针尖距记录层5 nm时,针尖下方记录层表面的相对电场强度振幅大于光刻临界值的分布宽度与针尖尺寸相近.

Transverse mode formation in longitudinally pumped miniature slab lasers

The formation of transverse modes in longitudinally pumped miniature slab lasers is investigated theoretically and experimentally. The longitudinally non-uniform gain-guiding is studied by expanding the electric field into the Hermite-Gaussian functions that satisfy boundary conditions of the resonator. Non-Gaussian transversal beam profiles in the near field are found and the beam diameter is reduced when the pump spot becomes smaller. The experimental observation agrees with the theoretical calculation.

Beam conditions for radiation generated by an electromagnetic J 0-correlated Schell-model source

Based on the 2 x 2 (electric field) cross-spectral density matrix, a model for an electromagnetic J(0)-correlated Schell-model beam is given that is a generalization of the scalar J(0)-correlated Schell-model beam. The conditions that the matrix for the source to generate an electromagnetic J(0)-correlated Schell-model beam are obtained. The condition for the source to generate a scalar J(0)-correlated Schell-model beam can be considered as a special case. (C) 2008 Optical Society of America

Nano-modification inside transparent materials by femtosecond laser single beam

Periodic nanostructures along the polarization direction of light are observed inside silica glasses and tellurium dioxide single crystal after irradiation by a focused single femtosecond laser beam. Backscattering electron images of the irradiated spot inside silica glass reveal a periodic structure of stripe-like regions of similar to 20 nm width with a low oxygen concentration. In the case of the tellurium dioxide single crystal, secondary electron images within the focal spot show the formation of a periodic structure of voids with 30 nm width. Oxygen defects in a silica glass and voids in a tellurium dioxide single crystal are aligned perpendicular to the laser polarization direction. These are the smallest nanostructures below the diffraction limit of light, which are formed inside transparent materials. The phenomenon is interpreted in terms of interference between the incident light field and the electric field of electron plasma wave generated in the bulk of material.

Structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs on gamma-LiAlO2

We report the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a gamma-LiAlO2 (100) substrate. The TMGa, TMIn and NH3 are used as sources of Ga, In and N, respectively. The structural and surface properties of the epilayers are characterized by x-ray diffraction, polarized Raman scattering and atomic force microscopy (AFM). The films have a very smooth surface with rms roughness as low as 2nm for an area of 10 x 10 mu m(2) by AFM scan area. The XRD spectra show that the materials grown on gamma-LiAlO2 (100) have < 1 - 100 > m-plane orientation. The EL spectra of the m-plane InGaN/GaN multiple quantum wells LEDs are shown. This demonstrates that our nonpolar LED structure grown on the gamma-LiAlO2 substrate is indeed free of internal electric field. The current voltage characteristics of these LEDs show the rectifying behaviour with a turn on voltage of 1-3 V.

Laser induced damage of multi-layer dielectric used in pulse compressor gratings

Laser induced damage threshold (LIDT) of multi-layer dielectric used in pulse compressor gratings (PCG) was investigated. The sample was prepared by e-beam evaporation (EBE). LIDT was detected following ISO standard 11254-1.2. It was found that LIDTs of normal and 51.2 deg. incidence (transverse electric (TE) mode) were 14.14 and 9.31 J/cm2, respectively. A Nomarski microscope was employed to map the damage morphology, and it was found that the damage behavior was pit-concave-plat structure for normal incidence, while it was pit structure for 51.2 deg. incidence with TE mode. The electric field distribution was calculated to illuminate the difference of LIDT between the two incident cases.

基于Berreman矩阵的双折射薄膜光谱响应特性计算

采用Berreman特征矩阵方法，通过数值计算研究了双折射薄膜的反射、透射等光谱响应特性。依据电磁场理论的电场分量、磁场分量的界面连续条件，推导了光波在各向异性双轴薄膜中的Berreman转移矩阵，用以分析含有各向异性介质层的复杂薄膜系统的光学性质。这些矩阵递推关系包含了界面处的多点反射，适用于一般的各向异性的多层膜系统，包括入射媒质或基底为各向异性的情况。在文中给出了各向同性入射媒质双轴各向异性膜层一各向同性基底薄膜系统的计算结果，验证了该计算方法的可行性，以此作为进一步研究各向异性薄膜和相关光学薄膜器

Overcoat dependence of laser-induced damage threshold of 355 nm HR coatings

A series of HR coatings, with and without overcoat, were prepared by electron beam evaporation using the same deposition process. The laser-induced damage threshold (LIDT) was measured by a 355 nm Nd:YAG laser with a pulse width of 8 ns. Damage morphologies of samples were observed by Leica-DMRXE Microscope. The stress was measured by viewing the substrate deformation before and after coatings deposition using an optical interferometer. Reflectance of the samples was measured by Lambda 900 Spectrometer. The theoretical results of electric field distributions of the samples were calculate by thin film design software (TFCalc). It was found that SiO2 overcoat had improved the LIDT greatly, while MgF2 overcoat had little effect on the LIDT because of its high stress in the HR coatings. The damage morphologies were different among HR coatings with and without overcoats. (c) 2005 Elsevier B.V. All rights reserved.