Radio over free space optical link using a directly modulated two-electrode high power tapered laser

The analog modulation performance of a high-power two-electrode tapered laser is investigated. A 25dB dynamic range for 2.4GHz 802.11g signals is achieved with a 26dB loss budget, showing a >1km free space range is possible. © 2010 Optical Society of America.

Gigabit/s modulation of twin-electrode high-brightness tapered laser with high modulation efficiency

Simultaneous high modulation speed and high modulation efficiency operation of a two-electrode tapered laser is reported. 1Gb/s direct data modulation is achieved with 68mA applied current swing for a 0.95W output optical modulation amplitude. © 2009 Optical Society of America.

Control of material transport through pulse shape manipulation-a development toward designer pulses

The variety of laser systems available to industrial laser users is growing and the choice of the correct laser for a material target application is often based on an empirical assessment. Industrial master oscillator power amplifier systems with tuneable temporal pulse shapes have now entered the market, providing enormous pulse parameter flexibility in an already crowded parameter space. In this paper, an approach is developed to design interaction parameters based on observations of material responses. Energy and material transport mechanisms are studied using pulsed digital holography, post process analysis techniques and finite-difference modelling to understand the key response mechanisms for a variety of temporal pulse envelopes incident on a silicon (1/1/1) substrate. The temporal envelope is shown to be the primary control parameter of the source term that determines the subsequent material response and the resulting surface morphology. A double peak energy-bridged temporal pulse shape designed through direct application of holographic imaging data is shown to substantially improve surface quality. © 2014 IEEE.

An analysis of electrode patterns in capacitive touch screen panels

In the design of capacitive touch-screen panels, electrodes are patterned to improve touch sensitivity. In this paper, we analyze the relationship between electrode patterns and touch sensitivity. An approach is presented where simulations are used to measure the sensitivity of touch-screen panels based on capacitance changes for various electrode patterns. Touch sensitivity increases when the touch object is positioned in close proximity to fringing electric fields generated by the patterned electrodes. Three new electrode patterns are proposed to maximize field fringing in order to increase touch sensitivity by purely electrode patterning means. Simulations showed an increased touch sensitivity of up to 5.4%, as compared with the more conventional interlocking diamonds pattern. Here, we also report empirical findings for fabricated touch-screen panels. © 2005-2012 IEEE.

Patterns and levels of PCDD/F in a Chinese graphite electrode sludge

The graphite electrode sludge was sampled from a huge chloralkali plant in central China. The total level of PCDD/F was found as high as 378.85 mu g/kg sludge (dry weight). The patterns of PCDD/F in each homologue indicated the predominance of tetra- to octa-chlorinated PCDFs, Furthermore, the toxic 2,3,7,8-substituted PCDFs constituted over 80% of the total PCDFs in the sludge and the corresponding PCDDs were only at 15 mu g/kg level. The calculated value of the international toxic equivalence (I-TEQ) in sludge was 21.65 mu g/kg sludge (dry weight). This typical "dioxin chloralkali pattern" was apparently identified in the sediments near the effluent outlet of the chloralkali plant.

Effect of natural dissolved humic material on bioavailability and acute toxicity of fenpropathrin to the grass carp, Ctenopharyngodon idellus

The effects of aquatic humic acids on the bioconcentration and acute toxicity of fenpropathrin were evaluated using grass carp, Ctenopharyngodan idellus, in laboratory freshwater systems. The results demonstrated that both bioavailability and acute toxicity decreased in the presence of aquatic humic acid 5 and 10 mg/liter. In addition, the extent of influence increased with increasing concentration of aquatic humic acid, (C) 1999 Academic Press.

Development of high-k gate dielectric materials

The traditional gate dielectric material Of SiO2 can not satisfy the need of the continuous downscaling of CMOS dimensions. High-K gate dielectric materials have attracted extensive research efforts recently and obtained great progress. In this paper, the developments of high-K gate materials were reviewed. Based on the author's background and research work in the area, the latest achievements of high-K gate dielectric materials on the recrystalization temperature, the low-K interface layer, and the dielectric breakdown and metal gate electrode were introduced in detail.

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 degrees C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved.

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The optimum implantation energy was also determined.

Fabrication of arrayed waveguide grating based on SOI material

An arrayed waveguide grating based on SOI material was fabricated by inductive coupled plasma (ICP) etching technology. The central wavelength of the device was designed at 1.5509 mu m and the channel spacing was 200 GHz. Comparing with the values of the design, the differences of the central wavelength and the channel spacing in the test were 0.28 nm and 0.02 nm, respectively. The adjacent channel crosstalk was about 10 dB, and the uniformity of the five channels' insertion loss was only 0.7 dB. The results show that the device can be used as a demultiplexer.

Photonic crystal vertical-cavity surface-emitting laser based on GaAs material

A photonic crystal vertical-cavity-surface-emitting laser ( PC-VCSEL) with a wavelength of about 850 nm was realized. The direct-current electrically-driven PC-VCSELs with a minimum threshold current of 2 mA and a maximum threshold current of 13.5 mA were obtained. We fabricated a series of PC-VCSEL chips whose lattice constants are in the range from 0.5 to 3 mu m with different filling factors, and found that the laser characterization depends on the lattice constant, the filling factor, the size of cavity, etc.

Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property

As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance material after high temperature annealing. Defects in the InP materials have been studied by conventional Hall effect measurement, thermally stimulated current spectroscopy, deep level transient spectroscopy and X-ray diffraction respectively. The results indicate that Fe atoms in the InP material change from the substitutional to the interstitial sites under thermal activation. Consequently, the InP material loses its deep compensation centers which results in the change in types of conduction. The mechanism and cause of the phenomena have been analyzed through comparison of the sites of Fe atom occupation and activation in doping, diffusion and ion implantation processes of InP.

Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers

1.6-1.7 mu m highly strained InGaAs/InGaAsP distributed feedback lasers was grown and fabricated by low pressure mentalorganic chemical vapor deposition. High quality highly strained InGaAs/InP materials were obtained by using strain buffer layer. Four pairs of highly strained quantum wells were used in the devices and carrier blocking layer was used to improve the temperature characteristics of the devices. The uncoated 1.66 mu m and 1.74 mu m lasers with ridge wave guide 3 mu m wide have low threshold current (< 15mA) and high output power (> 14mW at 100mA). In the temperature range from 10 degrees C to 40 degrees C, the characteristic temperature T-0 of the 1.74 mu m laser is 57K, which is comparable to that of the 1.55 mu m-wavelength InGaAsP/InP-DFB laser.

Optical properties of semiconductor quantum-well material using photonic crystal fabricated by micro-fabrication machine

Two-dimensional photonic crystals in near infrared region were fabricated by using the focused ion beam ( FIB) method and the method of electron-beam lithography (EBL) combined with dry etching. Both methods can fabricate perfect crystals, the method of FIB is simple,the other is more complicated. It is shown that the material with the photonic crystal fabricated by FIB has no fluorescence,on the other hand, the small-lattice photonic crystal made by EBL combined with dry etching can enhance the extraction efficiency two folds, though the photonic crystal has some disorder. The mechanisms of the enhanced-emission and the absence of emission are also discussed.

Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD

AlxInyGa1-x-yN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures from 800 to 870degreesC. The incorporation of indium is found to increase with decreasing growth temperature, while the incorporation of Al remains nearly constant. The optical properties of the samples have been investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL) at different temperatures. The results show that the sample grown at 820 C exhibits the best optical quality for its large PL intensity and the absence of the yellow luminescence. Furthermore the temperature-dependent PL and TRPL of the sample reveals its less exciton localization effect caused by alloy fluctuations. In the scanning electron microscopy measurement, much uniform surface morphology is found for the sample grown at 820degreesC, in good agreement with the PL results, The improvement of AlxInyGa1-x-yN quality is well correlated with the incorporation of indium into AlGaN and the possible mechanism is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.