Low-temperature preparation and characterization of phase-pure lanthanide chromates (V) by the citrate gel process

Phase-pure, crystalline lanthanide chromates LnCrO4 (V), where Ln = La, Pr, Nd, Sm, Gd, Dy, Ho, Yb, Lu and Y, have been prepared by the controlled combustion of the corresponding lanthanide biscitrato chromium (III) complexes at comparatively low temperatures. Formation of chromates (V) was confirmed by X-ray diffraction, infrared and electronic spectroscopy. Phase purity of the materials has also been confirmed by X-ray photoelectron spectroscopy.

Method of Analysis if Uniaxial Deformation Data

A comprehensive scheme for analysing uniaxial deformation data, taking into account the finite stiffness of the testing machine is presented. Equations relevant to tension and stress relaxation tests carried out under cross head speed control, and to creep testing under constant load, are described. For the first two cases, the implications of not using gauge length extensometry but relying upon cross head displacement for inferring specimen extension, and the role of uncertainty in machine stiffness are also examined. The final section touches upon the extension of the present scheme to account for specimen anelasticity.

On The Temperature-Dependence of Regioselectivity in the Amination of Bromobenzotropones

The ipso/cine ratio in the amination of 5-bromo-2,3-benzo- or 2-bromo-4,5-benzotropone shows a dependence upon the temperature at which the reaction is conducted, changing in favour of the ipso-product when the temperature is maintained high, ruling out an aryne-type mechanism. A comparison of independent mechanisms envisaged for the formation of the two isomeric products suggests a two-part reason: (i) at a higher reaction temperature, C-protonation, a step necessary for the formation of the cine-product, could be retarded when a direct internal mode is interfered with by a less efficient external one, and (ii) reketonisation by elimination of bromide, needed to form the ipso-product, is likely to have a high temperature coefficient enabling the rate of its formation to overtake that of the cine-product.

Processing maps for hot working of Cu-Ni-Zn alloys Part II Alpha-Beta nickel silver

The constitutive behaviour of agr-beta nickel silver in the temperature range 600�850 °C and strainrate range 0.001�100s�1 was characterized with the help of a processing map generated on the principles of the dynamic materials model. On the basis of the flow-stress data, processing maps showing the variation of the efficiency of power dissipation (given by [2m/(m+1)], wherem is the strain-rate sensitivity) with temperature and strain rate were obtained, agr-beta nickel silver exhibits a single domain at temperatures greater than 700 °C and at strain rates lower than 1 s�1 with a maximum efficiency of power dissipation of about 42% occurring at about 850 °C and at 0.1 s�1. In the domain, the agr phase undergoes dynamic recrystallization and controls the deformation of the alloy, while the beta phase deforms superplastically. Optimum conditions for the processing of agr-beta nickel silver are 850 °C and 0.1 s�1. The material undergoes unstable flow at strain rates of 10 and 100 s�1 and in the temperature range 600�750 °C, manifestated in the form of adiabatic shear bands.

Novel approach for simultaneous measurement of strain and temperature using a single tapered fiber Bragg grating

A novel approach for simultaneous measurement of strain and temperature with a single tapered fiber Bragg grating is proposed. This method is based on the fact that the reflectivity at central wavelength of FBG reflection changes with chirp (strain gradient). A diode laser is locked to the central wavelength of FBG reflection. Central wavelength of the FBG shifts with temperature. Change in reflectivity & wavelength of the diode laser were used to measure strain and temperature on the FBG respectively.

Simultaneous measurement of strain and temperature with a pair of matched fiber Bragg gratings

A novel approach for simultaneous measurement of static/dynamic strain and temperature with a pair of matched fiber Bragg grating(FBG)s is proposed. When a diode laser locked to the mid reflection frequency of reference FBG is used to illuminate the sensor FBG, reflected intensity changes with strain on sensor FBG. Reference FBG responds with temperature on sensor FBG and is immune to strain, hence, wavelength of the diode laser acts as a signature for temperature measurement. Theoretical sensitivity limit for static strain and temperature are 1.2n epsilon / root Hz and 0.0011 degrees C respectively. Proposed sensor shows a great potential in high sensitive strain measurements with a simplified experimental setup.

Temperature dependence of hydrogen evolution reaction on nickel oxide electrode in sealed nickel/cadmium cells

The impedance of sealed nickel/cadmium cells around a cell e.m.f. of 0.0 V was measured at five different temperatures between � 10 and +30 °C. The results show that the behaviour is similar at all temperatures. Based on the experimental results, the relation between charge-transfer resistance (Rct) and temperature (T) has been established for the Volmer reaction. Further, the value of cathodic transfer coefficient (?) has been estimated.

X-ray diffraction line profile analysis of deformation microstructure in boron modified Ti-6Al-4V alloy

X-ray diffraction line profile analysis (XRDLPA) techniques have been applied to investigate the deformed microstructure of a recently developed boron modified two-phase titanium alloy Ti-6Al-4V. The alloy was hot compressed at 750 degrees C up to 50% height reduction at two different strain rates (10(-3) S-1 and 1 S-1). Microstructural parameters like average domain size, average microstrain within the domain and dislocation density of the two phases were determined using X-ray diffraction line profile analysis. The results indicate an increase in the microstrain and dislocation density for the alpha-phase and decrease for the beta-phase in the case of boron modified alloys as compared to the normal material. Microstructural modifications viz, the grain refinement and the presence of hard, brittle TiB particles in the case of boron modified alloy are held responsible for the observed difference in the dislocation density. (C) 2010 Elsevier Inc. All rights reserved.

Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE

Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 - 2 0) orientation of the GaN epilayers were confirmed by high resolution X-ray diffraction (HRXRD) study. The X-ray rocking curve (XRC) full width at half maximum of the (1 1 - 2 0) reflection shows in-plane anisotropic behavior and found to decrease with increase in growth temperature. The atomic force micrograph (AFM) shows island-like growth for the film grown at a lower temperature. Surface roughness has been decreased with increase in growth temperature. Room temperature photoluminescence shows near band edge emission at 3.434-3.442 eV. The film grown at 800 degrees C shows emission at 2.2 eV, which is attributed to yellow luminescence along with near band edge emission. (C) 2010 Elsevier B.V. All rights reserved.

Influence of Substrate Temperature and Deposition Rate on Structural and Mechanical Properties of Shape Memory NiTi Films

NiTi thin films deposited by DC magnetron sputtering of an alloy (Ni/Ti:45/55) target at different deposition rates and substrate temperatures were analyzed for their structure and mechanical properties. The crystalline structure, phase-transformation and mechanical response were characterized by X-ray diffraction (XRD), Differential Scanning Calorimetry (DSC) and Nano-indentation techniques, respectively. The films were deposited on silicon substrates maintained at temperatures in the range 300 to 500 degrees C and post-annealed at 600 degrees C for four hours to ensure film crystallinity. Films deposited at 300 degrees C and annealed for 600 degrees C have exhibited crystalline behavior with Austenite phase as the prominent phase. Deposition onto substrates held at higher deposition temperatures (400 and 500 degrees C) resulted in the co-existence of Austenite phase along with Martensite phase. The increase in deposition rates corresponding to increase in cathode current from 250 to 350 mA has also resulted in the appearance of Martensite phase as well as improvement in crystallinity. XRD analysis revealed that the crystalline film structure is strongly influenced by process parameters such as substrate temperature and deposition rate. DSC results indicate that the film deposited at 300 degrees C had its crystallization temperature at 445 degrees C in the first thermal cycle, which is further confirmed by stress temperature response. In the second thermal cycle the Austenite and Martensite transitions were observed at 75 and 60 degrees C respectively. However, the films deposited at 500 degrees C had the Austenite and Martensite transitions at 73 and 58 degrees C, respectively. Elastic modulus and hardness values increased from 93 to 145 GPa and 7.2 to 12.6 GPa, respectively, with increase in deposition rates. These results are explained on the basis of change in film composition and crystallization. (C) 2010 Published by Elsevier Ltd

Grain size effect on the phase transformation temperature of nanostructured CuFe2O4

We report a large decrease in tetragonal to cubic phase transformation temperature when grain size of bulk CuFe2O4 is reduced by mechanical ball milling. The change in phase transformation temperature was inferred from in situ high temperature conductivity and x-ray diffraction measurements. The decrease in conductivity with grain size suggests that ball milling has not induced any oxygen vacancy while the role of cation distribution in the observed decrease in phase transformation temperature is ruled out from in-field Fe-57 Mossbauer and extended x-ray absorption fine structure measurements. The reduction in the phase transformation temperature is attributed to the stability of structures with higher crystal symmetry at lower grain sizes due to negative pressure effect. (C) 2011 American Institute of Physics. doi: 10.1063/1.3493244]

A numerical investigation of ductile fracture initiation in a high-strength low-alloy steel

In this work, static and drop-weight impact experiments, which have been conducted using three-point bend fracture specimens of a high-strength low-alloy steel, are analysed by performing finite-element simulations. The Gurson constitutive model that accounts for the ductile failure mechanisms of microvoid nucleation, growth and is employed within the framework of a finite deformation plasticity theory. Two populations of second-phase particles are considered, including large inclusions which initiate voids at an early stage and small particles which require large strains to nucleate voids. The most important objective of the work is to assess quantitatively the effects of material inertia, strain rate sensitivity and local adiabatic temperature rise (due to conversion of plastic work into heat) on dynamic ductile crack initiation. This is accomplished by comparing the evolution histories of void volume fraction near the notch tip in the static analysis with the dynamic analyses. The results indicate that increased strain hardening caused by strain rate sensitivity, which becomes important under dynamic loading, plays a benign role in considerably slowing down the void growth rate near the notch tip. This is partially opposed by thermal softening caused by adiabatic heating near the notch tip.

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TE and TFE models were 1.08 and 1.43 eV, respectively. (C) 2011 American Institute of Physics. doi: 10.1063/1.3549685]

High Yield Room Temperature Synthesis And Spectral Studies Of Tri(Amino)Silanes: (R2n)3SIH

Tri(amino)silanes were prepared by the condensation of trichlorosilane with secondary amines in 1:6 molar ratio. Reactions of trichlorosilane with pyrrolidine, piperidine, hexamethyleneimine, morpholine, N-methylpiperazine and diethylamine afford the tri(amino)silanes in nearly quantitative yields. Their physical and spectroscopic properties are discussed. All these compounds are highly sensitive to moisture and hydrolyse to silica and the respective amine with the evolution of hydrogen. The compounds have been characterised by IR, 1H NMR, [1H]29Si NMR spectroscopic methods and CHN elemental analysis.

Hot-working characteristics of Zircaloy-2 in the temperature range of 650–950°C

The hot-working characteristics of Zircaloy-2 have been studied in the temperature range of 650 to 950°C and in the strain-rate range of 10−3 to 102 s−1 using power dissipation maps which describe the variation of the efficiency of power dissipation, η = 2m /(m + 1) where m is the strain-rate sensitivity of flow stress. The individual domains exhibited by the map have been interpreted and validated by detailed metallographic investigations. Dynamic recrystallization occurs in the temperature range of 730 to 830°C and in the strain-rate range of 10−2 to 2 s−1. The peak efficiency occurs at 800°C and 0.1 s−1 which may be considered as the optimum hot-working parameters in the α-phase field of Zircaloy-2. Superplastic behaviour, characterized by a high efficiency of power dissipation is observed at temperatures greater than 860°C and at strain rates lower than 10−2 s−1. When deformed at 650°C and 10−3 s−1, the primary restoration mechanism is dynamic recovery, while at rates higher than 2s−1, the material exhibits microstructural instabilities in the form of localized shear bands.