Use of permeable reactive barrier to mitigate groundwater nitrate contamination from on-site sanitation

Nearly 50% of India's population depends on variants of pit-toilet systems for human waste disposal. Nitrate contamination of groundwater by pit-toilet leachate is a major environmental concern in the country as it sources a major proportion (50-80%) of potable water from aquifers. Therefore, minimizing nitrate contamination of groundwater due to leachate infiltration from pit-toilet systems is essential. Batch and column experiments demonstrated the capability of bentonite-enhanced sand (BES) specimens to reduce nitrate concentrations in synthetic solutions (initial NO3-N concentration = 22.7 mg/L, C/N = 3) by about 85-90% in 10 to 24 hour by a heterotrophic denitrification process. Based on the laboratory results, it is recommended that use of a BES-permeable reactive barrier layer at the base of pit-toilets will facilitate heterotrophic denitrification and mitigate nitrate contamination of the underlying aquifer.

Biodiesel Exhaust Treatment with Dielectric Barrier Discharges Coupled with Industrial Waste Byproducts

Biodiesel run engines are gaining popularity since the last few years as a viable alternative to conventional petro-diesel based engines. In biodiesel exhaust the content of volatile organic compounds, oil mist, and mass of particulate matter is considerably lower. However, the concentration of oxides of nitrogen (NOx) is relatively higher. In this paper the biodiesel exhaust from a stationary engine is treated under controlled laboratory conditions for removal of NOx using dielectric barrier discharge plasma in cascade with adsorbents prepared from abundantly available industrial waste byproducts like red mud and copper slag. Results were compared with gamma-alumina, a commercial adsorbent. Two different dielectric barrier discharge (DBD) reactors were tested for their effectiveness under Repetitive pulses /AC energization. NOx removal as high as 80% was achieved with pulse energized reactors when cascaded with red mud as adsorbent.

Modification of metal-InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers

The effect of inserting ultra-thin atomic layer deposited Al2O3 dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low(Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al2O3/p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al2O3 interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al2O3 interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al2O3/n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current-voltage characteristics displayed by these devices. (C) 2015 Elsevier B.V. All rights reserved.

Injection barrier induced deviations in space charge limited conduction in doped poly(3-methylthiophene) based devices

The carrier density dependent current-voltage (J V) characteristics of electrochemically prepared poly(3-methylthiophene) (P3MeT) have been investigated in Pt/P3MeT/Al devices, as a function of temperature from 280 to 84 K. In these devices, the charge transport is found to be mainly governed by different transport regimes of space charge limited conduction (SCLC). In a lightly doped device, SCLC controlled by exponentially distributed traps (Vl+1 law, l > 1) is observed in the intermediate voltage range (0.5-2 V) at all temperatures. However, at higher bias (> 2 V), the current deviates from the usual Vl+1 law where the slope is found to be less than 2 of the logJ-logV plot, which is attributed to the presence of the injection barrier. These deviations gradually disappear at higher doping level due to reduction in the injection barrier. Numerical simulations of the Vl+1 law by introducing the injection barrier show good agreement with experimental data. The results show that carrier density can tune the charge transport mechanism in Pt/P3MeT/Al devices to understand the non-Ohmic behavior. The plausible reasons for the origin of injection barrier and the transitions in the transport mechanism with carrier density are discussed. (C) 2015 AIP Publishing LLC.

Estimation of Power Input to Complex Dielectric Barrier Discharge Reactor Geometries used in NOx Cleaning

Studies were carried out to estimate the power input to Dielectric Barrier Discharge (DBD) reactors powered by AC high voltage in the context of their application in non-thermal plasma cleaning of exhaust gases. Power input to the reactors was determined both theoretically and experimentally. Four different reactor geometries energized with 50 Hz and 1.5 kHz AC excitation were considered for the study. The theoretically estimated power using Manley's equation was found to agree with the experimental results. Results show that the analytically computed capacitance, without including the electrode edge effects, gives sufficiently good results that are matching with the measured values. For complex geometries where analytical calculation of capacitance is often difficult, a novel method of estimating the reactor capacitance, and hence the power input to the reactor, was introduced in this paper. The predicted results were validated with experiments.

Prospects of zero Schottky barrier height in a graphene-inserted MoS2-metal interface

A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive current in atomic layer MoS(2-)channel-based field effect transistors. Approaches such as choosing metals with appropriate work functions and chemical doping are employed previously to improve the carrier injection from the contact electrodes to the channel and to mitigate the SBH between the MoS2 and metal. Recent experiments demonstrate significant SBH reduction when graphene layer is inserted between metal slab (Ti and Ni) and MoS2. However, the physical or chemical origin of this phenomenon is not yet clearly understood. In this work, density functional theory simulations are performed, employing pseudopotentials with very high basis sets to get insights of the charge transfer between metal and monolayer MoS2 through the inserted graphene layer. Our atomistic simulations on 16 different interfaces involving five different metals (Ti, Ag, Ru, Au, and Pt) reveal that (i) such a decrease in SBH is not consistent among various metals, rather an increase in SBH is observed in case of Au and Pt; (ii) unlike MoS2-metal interface, the projected dispersion of MoS2 remains preserved in any MoS2-graphene- metal system with shift in the bands on the energy axis. (iii) A proper choice of metal (e.g., Ru) may exhibit ohmic nature in a graphene-inserted MoS2-metal contact. These understandings would provide a direction in developing high-performance transistors involving heteroatomic layers as contact electrodes. (c) 2016 AIP Publishing LLC.

Graphene as a diffusion barrier for isomorphous systems: Cu-Ni system

Electrochemical exfoliation technique using the pyrophosphate anion derived from tetra sodium pyrophosphate was employed to produce graphene. As-synthesized graphene was then drop dried over a cold rolled Cu sheet. Ni coating was then electrodeposited over bare Cu and graphene-Cu substrates. Both substrates were then isothermally annealed at 800 degrees C for 3 h. WDS analysis showed substantial atomic diffusion in annealed Ni-Cu sample. Cu-graphene-Ni sample, on the other hand, showed negligible diffusion illustrating the diffusion barrier property of the graphene coating. (C) 2016 Elsevier B.V. All rights reserved.

Graphene as a diffusion barrier for isomorphous systems: Cu-Ni system

Electrochemical exfoliation technique using the pyrophosphate anion derived from tetra sodium pyrophosphate was employed to produce graphene. As-synthesized graphene was then drop dried over a cold rolled Cu sheet. Ni coating was then electrodeposited over bare Cu and graphene-Cu substrates. Both substrates were then isothermally annealed at 800 degrees C for 3 h. WDS analysis showed substantial atomic diffusion in annealed Ni-Cu sample. Cu-graphene-Ni sample, on the other hand, showed negligible diffusion illustrating the diffusion barrier property of the graphene coating. (C) 2016 Elsevier B.V. All rights reserved.

Application of laser cladding technology to improve the interface of thermal barrier coatings

The present study is focused on improvement of the adhesion properties of the interface between plasma-sprayed coatings and substrates by laser cladding technology (LCT), Within the laser-clad layer there is a gradient distribution in chemical composition and mechanical properties that has been confirmed by SEM observation and microhardness measurement. The residual stress due to mismatches in thermal and mechanical properties between coatings and substrates can be markedly reduced and smoothed out. To examine the changes of microstructure and crack propagation in the coating and interface during loading, the three-point bending test has been carried out in SEM with a loading device. Analysis of the distribution of shear stress near the interface under loading has been made using the FEM code ANSYS, The experimental results show clearly that the interface adhesion can be improved with LCT pretreatment, and the capability of the interface to withstand the shear stress as well as to resist microcracking has been enhanced.

Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate

The Schottky barrier heights of various metals on the high permitivity oxides tantalum pentoxide, barium strontium titanate, lead zirconate titanate, and strontium bismuth tantalate have been calculated as a function of the metal work function. It is found that these oxides have a dimensionless Schottky barrier pinning factor S of 0.28-0.4 and not close to 1 because S is controlled by Ti-O-type bonds not Sr-O-type bonds, as assumed in earlier work. The band offsets on silicon are asymmetric with a much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate are relatively poor barriers to electrons on Si. © 1999 American Institute of Physics.

Schottky barrier heights of tantalum oxide, barium strontium titanate, lead zirconate titanate and strontium bismuth tantalate

Schottky barrier heights of various metals on tantalum pentoxide, barium strontium titanate, lead zirconate-titanate and strontium bismuth tantalate have been calculated as a function of metal work function. These oxides have a dimensionless Schottky barrier pinning factor, S, of 0.28 - 0.4 and not close to 1, because S is controlled by the Ti-O type bonds not Sr-O type bonds, as assumed previously. Band offsets on silicon are asymmetric with much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate (BST) are relatively poor barriers to electrons on Si.