The Effect of Dopants on the Microwave Dielectric Properties of Ba (Mg 0.33 Ta 0.67) O3 Ceramics

The effect of dopants with different valencies and ionic radii on the densification, structural ordering, and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 (BMT) is investigated. It is found that dopants such as Sb2O5, MnO, ZrO2, WO3, and ZnO improve the microwave dielectric properties of BMT. Addition of trivalent dopants is detrimental to the cation ordering and dielectric properties of BMT. A correlation between the microwave dielectric properties of BMT and ionic radii of the dopant has been established. The variation of the dielectric properties of pure and doped BMT at cryogenic temperatures is also discussed.

Synthesis, Characterisation and Properties of (Ba1-xSrx) (Nd1/2Nb1/2 ) 03 Ceramics for Application as Dielectric Resonators in Microwave Circuits

The (Ba1-x Srx) (Nd1/2, Nb1/2) O3 ceramics have been prepared by the conventional ceramic route for different values of x. Addition of a small amount of CeO2(1 wt%) as a sintering aid increased the density of the samples. The structure and microstructure of the sintered samples are studied by X-ray diffraction and SEM methods. The dielectric properties of the samples are measured in the microwave frequency region as a function of composition. The dielectric constant decreases as x increases. The coefficient of thermal variation of resonant frequency decreases as the Sr content increases and goes to the negative side. The dielectric properties of (Ba1-x Srx) (Nd1/2, Nb1/2) O3 are in the range suitable for application as dielectric resonators in microwave circuits

High Permittivity and Low Ceramics in the Bao-SrO-Nb2O5 System

A new group of compounds with composition (Ba5-xSrx) Nb4015, having high permittivity and low loss have been prepared and characterized in the microwave frequency region . X-ray diffraction studies showed that monophase compound existed for all values of x from 0 to 5. Microwave dielectric properties such as and c f showed smooth variation with x , while the unloaded quality factor (Qu) showed remarkable improvement with x

New High Permittivity and Low Loss Ceramics in the Bao-Ti02- Nb205 Composition

New dielectric ceramics with formula BaTi3Nb4, O„ and Ba6Til4Nbz039 have been prepared and characterized. BaTi3Nba017 was densified to 92% of TD after firing at 1310 oC for 4 h. However, Ba6Ti 1 4Nb2O39 fired under optimized conditions (1260 ` C for 4 h) showed only 85% TD together with secondary phase. The crystal system of both of the compositions is orthorhombic

Preparation, Characterization and Dilectric Properties of Ceramics in the BaO-Nd2O3-TiO2 System

The dielectric ceramics BaNd2Ti3Oto, BaNd2Ti4O12 and BaNd2Ti5O14 have been prepared by Conventional solid state ceramic route. The sintered ceramic samples have been characterized by X-ray diffraction and Scanning Electron Microscopy (SEM). The dielectric properties in the microwave frequency range have been measured using conventional microwave dielectric resonator methods. The BaNd2Ti1O10, BaN2Ti4O12 and BaNd2Ti5O14 have dielectric constants (Er) ~ 60, 84 and 77 respectively. They have relatively high quality factors