The Effect of Dopants on the Microwave Dielectric Properties of Ba (Mg 0.33 Ta 0.67) O3 Ceramics
Data(s) |
23/10/2008
23/10/2008
22/08/2005
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Resumo |
The effect of dopants with different valencies and ionic radii on the densification, structural ordering, and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 (BMT) is investigated. It is found that dopants such as Sb2O5, MnO, ZrO2, WO3, and ZnO improve the microwave dielectric properties of BMT. Addition of trivalent dopants is detrimental to the cation ordering and dielectric properties of BMT. A correlation between the microwave dielectric properties of BMT and ionic radii of the dopant has been established. The variation of the dielectric properties of pure and doped BMT at cryogenic temperatures is also discussed. |
Identificador |
JOURNAL OF APPLIED PHYSICS 98, 094114 (2005), DOI: 10.1063/1.2127124 |
Idioma(s) |
en |
Publicador |
American Institute of Physics |
Palavras-Chave | #Dopants #Ionic radii #Densification #Microwave dielectric properties #Cryogenic temperatures |
Tipo |
Working Paper |