Gate commutated thyristor with voltage independent maximum controllable current

In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clarify the mechanisms that limit safe switching at different dc-link voltages. The 3-D simulation results show that the HPT design can increase the maximum controllable current in 24 mm diameter devices beyond the realm of GCT switching, known as the hard-drive limit. It is proposed that the maximum controllable current becomes independent of the dc-link voltage for the complete range of operating voltage. © 1980-2012 IEEE.

Asymmetrical low-voltage ride through of brushless doubly fed induction generators for the wind power generation

Compared with the Doubly fed induction generators (DFIG), the brushless doubly fed induction generator (BDFIG) has a commercial potential for wind power generation due to its lower cost and higher reliability. In the most recent grid codes, wind generators are required to be capable of riding through low voltage faults. As a result of the negative sequence, induction generators response differently in asymmetrical voltage dips compared with the symmetrical dip. This paper gave a full behavior analysis of the BDFIG under different types of the asymmetrical fault and proposed a novel control strategy for the BDFIG to ride through asymmetrical low voltage dips without any extra hardware such as crowbars. The proposed control strategies are experimentally verified by a 250-kW BDFIG. © 2012 IEEE.

Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer

Significant improvements in the spatial and temporal uniformities of device switching parameters are successfully demonstrated in Ge/TaOx bilayer-based resistive switching devices, as compared with non-Ge devices. In addition, the reported Ge/TaOx devices also show significant reductions in the operation voltages. Influence of the Ge layer on the resistive switching of TaOx-based resistive random access memory is investigated by X-ray spectroscopy and the theory of Gibbs free energy. Higher uniformity is attributed to the confinement of the filamentary switching process. The presence of a larger number of interface traps, which will create a beneficial electric field to facilitate the drift of oxygen vacancies, is believed to be responsible for the lower operation voltages in the Ge/TaO x devices. © 1980-2012 IEEE.

Modeling turn-off voltage rise in SOI LIGBT

The behavior of the drain voltage rise of the Lateral IGBT during inductive turn-off is studied in detail. Numerical simulations show that, if compared with the well known vertical IGBT, the Lateral IGBT presents a differences in the on-state stored charge and in the growth of the depleted region that result in a different drain voltage rise. In this paper a complete model for the voltage rise is devised through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turn-off voltage rise in the Lateral IGBT. © Springer Science + Business Media LLC 2006.

Optimised IGBT turn-off under active voltage control in PEBB applications

Active Voltage Control (AVC) is an implementation of classic Proportional-Derivative (PD) control and multi-loop feedback control to force an IGBT to follow a pre-set switching trajectory. Previously, AVC was mainly used for controlling series-connected IGBTs in order to enable voltage balance between IGBTs. In this paper, the nonlinear IGBT turn-off transient is further discussed and the turnoff of a single IGBT under AVC is further optimised in order to meet the demand of Power Electronic Building Block (PEBB) applications. © 2013 IEEE.

Shaping pulse transitions by active voltage control for reduced EMI generation

High-performance power switching devices (IGBT/MOSFET) realise high-performance power converters. Unfortunately, with a high switching speed of the IGBT or MOSFET freewheel diode chopper cell, the circuit has intrinsic sources of high-level EMI. Therefore, costly EMI filters or shielding are normally demanded on the load and supply side. Although an S-shaped voltage transient with a high order of derivation eliminates the discontinuity and could suppress HF spectrum of EMI emissions, a practical control scheme is still under development. In this paper, Active Voltage Control (AVC) is applied to successfully define IGBT switching dynamics with a smoothed Gaussian waveform so a reduced EMI can be achieved without extra EMI suppression devices. © 2013 IEEE.

Unified analytic model for current-voltage behavior in amorphous oxide semiconductor TFTs

We present a simple and semi-physical analytical description of the current-voltage characteristics of amorphous oxide semiconductor thin-film transistors in the above-threshold and sub-threshold regions. Both regions are described by single unified expression that employs the same set of model parameter values directly extracted from measured terminal characteristics. The model accurately reproduces measured characteristics of amorphous semiconductor thin film transistors in general, yielding a scatter of < 4%. © 1980-2012 IEEE.

Modeling sub-threshold current-voltage characteristics in thin film transistors

In this paper, we present a physically-based compact model for the sub-threshold behavior in a TFT with an amorphous semiconductor channel. Both drift and diffusion current components are considered and combined using an harmonic average. Here, the diffusion component describes the exponential current behavior due to interfacial deep states, while the drift component is associated with presence of localized deep states formed by dangling bonds broken from weak bonds in the bulk and follows a power law. The proposed model yields good agreement with measured results. © 2013 IEEE.

Molecular systematics of medusae in the genus Craspedacusta (Cnidaria: Hydrozoa: Limnomedusae) in China with the reference to the identity of species

The objective of this study was to illustrate the phylogenetic relationship of the species in the genus Craspedacusta in China. The medusae samples were collected at 28 localities in China representing seven described species with their entire ITS region (the contiguous sequences of ITS-1, 5.8S and ITS-2 rDNA) rDNA sequences cloned. Among the 28 samples, the range of sequence variation in the complete ITS and 5.8S region was between 0 and 36.2%. Three main clades were revealed by both maximum likelihood and neighbour-joining trees, with sequence difference of 0-0.9, 0-3.7 and 0.1-1.5% in the three clades. The nesting of C. xinyangensis representatives within C. sowerbii, C. brevinema within C. sinensis and C. sichuanensis within C. kiatingi is strongly supported, with interspecific sequence divergence of 0-0.9, 0.1-1.4 and 0.0-0.4%, respectively. Thus, it is suggested that C. xinyangensis should be the synonym of C. sowerbii, C. sichuanensis the synonym of C. kiatingi and C. brevinema the synonym of C. sinensis. However, the taxonomic status of C. ziguiensis is still uncertain. According to the tree topology, C. kiatingi was closer to C. sowerbii than to C. sinensis. Craspedacusta sinensis was the most genetically distinct from distance matrix values, and located at the base of the phylogenetic trees, so it can be speculated that the C. sinensis may be the ancestral form in the genus Craspedacusta.

Reference frame re-alignment for vector control of the brushless doubly-fed machine

Vector control provides stability and performance when applied to the brushless doubly-fed machine, however cross-coupling effects can arise between inputs and outputs. To address these effects, a procedure is proposed to both visualize and minimize the cross-coupling by means of steady-state mapping and a re-alignment of the dq reference frame. With this method implemented, gain-response tests show improved decoupling across the operating region. © 2013 EUCA.

Photosynthesis and growth of Arthrospira (Spirulina) platensis (Cyanophyta) in response to solar UV radiation, with special reference to its minor variant

The minor variant of the economically important cyanobacterium, Arthrospira platensis, usually appears in commercial production ponds under solar radiation. However, how sensitive the minor variant to solar UVR and whether its occurrence relates to the solar exposures are not known. We investigated the photochemical efficiency of PSII and growth rate of D-0083 strain and its minor variant in semi-continuous cultures under PAR (400-700 nm) alone, PAR + UV-A (320-400 nm) and PAR + UV-A + UV-B (280-700 nm) of solar radiation. The effective quantum yield of D-0083 at 14:00 p.m. decreased by about 86% under PAR, 87% under PAR + UV-A and 92% under PAR + UV-A + UV-B (280-315 nm), respectively. That of the minor variant was reduced by 93% under PAR and to undetectable values in the presence of UV-A or UV-A + UV-B. Diurnal change of the yield showed constant pattern during long-term (10 days) exposures, high in the early morning and late afternoon but the lowest at noontime in both strains, with the UVR-related inhibition being always higher in the variant than D-0083. During the long-term exposures, cells of D-0083 acclimated faster to solar UV radiation and showed paralleled growth rates among the treatments with or without UVR at the end of the experiment; however, growth of the minor variant was significantly reduced by UV-A and UV-B throughout the period. Comparing to the major strain D-0083, the minor variant was more sensitive to UVR in terms of its growth, quantum yield and acclimation to solar radiation. (c) 2007 Elsevier B.V. All rights reserved.

Low voltage ride-through of DFIG and brushless DFIG: Similarities and differences

The brushless doubly fed induction generator (BDFIG) has been proposed as a viable alternative in wind turbines to the commonly used doubly fed induction generator (DFIG). The BDFIG retains the benefits of the DFIG, i.e. variable speed operation with a partially rated converter, but without the use of brush gear and slip rings, thereby conferring enhanced reliability. As low voltage ride-through (LVRT) performance of the DFIG-based wind turbine is well understood, this paper aims to analyze LVRT behavior of the BDFIG-based wind turbine in a similar way. In order to achieve this goal, the equivalence between their two-axis model parameters is investigated. The variation of flux linkages, back-EMFs and currents of both types of generator are elaborated during three phase voltage dips. Moreover, the structural differences between the two generators, which lead to different equivalent parameters and hence different LVRT capabilities, are investigated. The analytical results are verified via time-domain simulations for medium size wind turbine generators as well as experimental results of a voltage dip on a prototype 250 kVA BDFIG. © 2014 Elsevier B.V.