1000 resultados para Raney-Ni


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The electronic structure of the molecular solid Ni(tmdt)2, the only well characterized neutral molecular metal to date, has been studied by means of first-principles density functional calculations. It is shown that these calculations correctly describe the metallic vs semiconducting behavior of molecular conductors of this type. The origin of the band overlap leading to the metallic character and the associated Fermi surfaces has been studied.

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The ab initio periodic unrestricted Hartree-Fock method has been applied in the investigation of the ground-state structural, electronic, and magnetic properties of the rutile-type compounds MF2 (M=Mn, Fe, Co, and Ni). All electron Gaussian basis sets have been used. The systems turn out to be large band-gap antiferromagnetic insulators; the optimized geometrical parameters are in good agreement with experiment. The calculated most stable electronic state shows an antiferromagnetic order in agreement with that resulting from neutron scattering experiments. The magnetic coupling constants between nearest-neighbor magnetic ions along the [001], [111], and [100] (or [010]) directions have been calculated using several supercells. The resulting ab initio magnetic coupling constants are reasonably satisfactory when compared with available experimental data. The importance of the Jahn-Teller effect in FeF2 and CoF2 is also discussed.

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A novel binuclear Ni(II) complex of salicylaldehyde 3-azacyclothiosemicarbazone (H2L) has been synthesized and characterized by elemental analysis, IR and UV–Vis spectroscopy. The single crystal X-ray structure of the complex shows that bridging occurs through thiolato sulfur and phenolic oxygen atoms. Nickel centers in the complex have square planar and octahedral geometries

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In this letter, we report flexible, non corrosive, and light weight nickel nanoparticle@multi-walled carbon nanotube–polystyrene (Ni@MWCNT/PS) composite films as microwave absorbing material in the frequency range of S band (2-4 GHz). Dielectric permittivity and magnetic permeability of composites having 0.5 and 1.5 wt. % filler amount were measured using the cavity perturbation technique. Reflection loss maxima of 33 dB (at 2.7 GHz) and 24 dB (at 2.7 GHz) were achieved for 0.5 and 1.5 wt. % Ni@MWCNT/PS composite films of 6 and 4 mm thickness, respectively, suggesting that low concentrations of filler provide significant electromagnetic interference shielding

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Metglas 2826 MB having a nominal composition of Fe40Ni38Mo4B18 is an excellent soft magnetic material and finds application in sensors and memory heads. However, the thin-film forms of Fe40Ni38Mo4B18 are seldom studied, although they are important in micro-electro-mechanical systems/nano-electromechanical systems devices. The stoichiometry of the film plays a vital role in determining the structural and magnetic properties of Fe40Ni38Mo4B18 thin films: retaining the composition in thin films is a challenge. Thin films of 52 nm thickness were fabricated by RF sputtering technique on silicon substrate from a target of nominal composition of Fe40Ni38Mo4B18. The films were annealed at temperatures of 400 °C and 600 °C. The micro-structural studies of films using glancing x-ray diffractometer (GXRD) and transmission electron microscope (TEM) revealed that pristine films are crystalline with (FeNiMo)23B6 phase. Atomic force microscope (AFM) images were subjected to power spectral density analysis to understand the probable surface evolution mechanism during sputtering and annealing. X-ray photoelectron spectroscopy (XPS) was employed to determine the film composition. The sluggish growth of crystallites with annealing is attributed to the presence of molybdenum in the thin film. The observed changes in magnetic properties were correlated with annealing induced structural, compositional and morphological changes

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The Raman and FTIR spectra of [C(NH2)3]2M(SO4)2 ·6H2O (withM= Co, Fe, Ni) were recorded and analysed. The observed spectral bands are assigned in terms of vibrations of guanidinium ions, sulphate groups and water molecules. The analysis shows that the sulphate tetrahedra are distorted from their free state symmetry Td to C1. This is attributed to the presence of hydrogen bonds from water molecules. The order of distortion of the metal oxygen octahedra influenced the distortion of the sulphate tetrahedra. The appearance of 1– 3 modes of water molecules above 3300 cm−1 indicates the presence of weak hydrogen bonds

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Fecha tomada del c??digo del documento

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El libro es el resultado de la compilaci??n de las colaboraciones de expertos internacionales reunidos en un Simposio Internacional sobre Psicolog??a y Psicobiolog??a Educativa e Integraci??n Social de las personas con S??ndrome de Down, organizado por Juan Perera (Asociaci??n S??ndrome de Down de Baleares. Universidad de las Islas Baleares) y Jean A. Rondal (Laboratorio de Psicoling????stica de la Universidad de Lieja, B??lgica), bajo los auspicios del Gobierno Balear y otras instituciones y organismos. La colaboraci??n de los autores murcianos (Candel, Carranza y P??rez L??pez) versa sobre el desarrollo socio-afectivo de los ni??os afectados por el S??ndrome y presenta los resultados de una investigaci??n longitudinal sobre el temperamento de los ni??os con s??ndrome Down. Los objetivos de la investigaci??n son: el estudio de los componentes temperamentales en el desarrollo de los ni??os con S??ndrome Down. La evaluaci??n del grado de estabilidad/inestabilidad de las diferencias temperamentales en los ni??os con S??ndrome Down y an lisis del grado de homogeneidad de los componentes temperamentales de estos ni??os como grupo y las diferencias con un grupo de control de ni??os no retrasados. Los resultados confirman la existencia de diferencias individuales en el temperamento de los ni??os con S??ndrome Down.

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Resumen tomado parcialmente de la publicaci??n

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Vertically aligned carbon nanotubes have been grown using Ni as catalyst by plasma enhanced chemical vapor deposition system (PECVD) in various pre-patterned substrates. Ni was thermally evaporated on silicon substrates with anodized alumina mask prepared in different methods including 2 step anodization of porous alumina template and interference lithography assisted array of pores. The templates helped to define Ni nanodots inside the pores which in turn catalyzed the growth of carbon nanotubes inside the PECVD system at temperature of 700-750C using mixture of ammonia and acetylene gases. The resulting well-aligned multi-walled carbon nanotubes were further investigated using SEM, TEM and Raman spectroscopy. The size, shape and structure of the grown carbon nanotubes were also discussed.

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Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁₋xGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented.

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Resumen tomado de la publicación

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Procedimiento que sigue el escolar al resolver un problema matem??tico. Campo heur??stico y formas arquet??picas. Escolares de quinto curso de EGB de la ciudad de Santander escogidos al azar. 102 ni??os de 4 colegios. Despu??s se reducen a 20 ni??os sin p??rdida de representatividad. Establecimiento de actos protot??picos por los cuales los ni??os resuelven sus problemas y ejercicios. Se establecen 5 ??reas: Conjuntos, Numeraci??n, C??lculo, Magnitudes y Geometr??a; los problemas se obtienen de un modo aleatorio, escogidos por los profesores de los colegios pertenecientes a la muestra. 20 problemas escogidos se presentan a los alumnos eligiendo aquellos resueltos por el 60-75 por ciento de los escolares, tomando uno de cada ??rea. Se reduce la muestra por el m??todo de elecci??n al azar. Se reelaboran los 4 problemas y se registra la conducta de los escolares en su resoluci??n. Parejas de observadores adiestrados, registros auditivos y visuales, c??digos de registro. T de Student, coeficiente de Scott, matrices de transaci??n y c??lculo de vectores l??mite. No aparecen. Faltan ??stas p??ginas.

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