Geochemistry and isotopic ratios of boninites and related rocks of the Izu-Bonin Forearc

Twenty-six samples representing the wide range of lithologies (low- and intermediate-Ca boninites and bronzite andesites, high-Ca boninites, basaltic andesites-rhyolites) drilled during Leg 125 at Sites 782 and 786 on the Izu-Bonin outer-arc high have been analyzed for Sr, Nd, and Pb isotopes. Nd-Sr isotope covariations show that most samples follow a trend parallel to a line from Pacific MORB mantle (PMM) to Pacific Volcanogenic sediment (PVS) but displaced slightly toward more radiogenic Sr. Pb isotope covariations show that all the Eocene-Oligocene samples plot along the Northern Hemisphere Reference Line, indicating little or no Pb derived from subducted pelagic sediment in their source. Two young basaltic andesite clasts within sediment do have a pelagic sediment signature but this may have been gained by alteration rather than subduction. In all isotopic projections, the samples form consistent groupings: the tholeiites from Site 782 and Hole 786A plot closest to PMM, the boninites and related rocks from Sites 786B plot closest to PVS, and the boninite lavas from Hole 786A and late boninitic dikes from Hole 786B occupy an intermediate position. Isotope-trace element covariations indicate that these isotopic variations can be explained by a three-component mixing model. One component (A) has the isotopic signature of PMM but is depleted in the more incompatible elements. It is interpreted as representing suboceanic mantle lithosphere. A second component (B) is relatively radiogenic (epsilon-Nd = ca 4-6; 206Pb/204Pb = ca 19.0-19.3; epsilon-Sr = ca -10 to -6)). Its trace element pattern has, among other characteristics, a high Zr/Sm ratio, which distinguishes it from the ìnormalî fluid components associated with subduction and hotspot activity. There are insufficient data at present to tie down its origin: probably it was either derived from subducted lithosphere or volcanogenic sediment fused in amphibolite facies; or it represents an asthenospheric melt component that has been fractionated by interaction with amphibole-bearing mantle. The third component (C) is characterized by high contents of Sr and high epsilon-Sr values and is interpreted as a subducted fluid component. The mixing line on a diagram of Zr/Sr against epsilon-Sr suggests that component C may have enriched the lithosphere (component A) before component B. These components may also be present on a regional basis but, if so, may not have had uniform compositions. Only the boninitic series from nearby Chichijima would require an additional, pelagic sediment component. In general, these results are consistent with models of subduction of ridges and young lithosphere during the change from a ridge-transform to subduction geometry at the initiation of subduction in the Western Pacific.

Paleoenvironmental changes in the western Mediterranean since the last glacial maximum: High resolution multiproxy record from the Algero-Balearic basin

The present study uses a multiproxy approach in order to further understand the evolution of climate responses in the western Mediterranean as of the Last Glacial Maximum. Sediments from ODP Site 975 in the Algero-Balearic basin have been analysed at high resolution, both geochemically andmineralogicallly. The resulting data have been used as proxies to establish a sedimentary regime, primary marine productivity, the preservation of the proxies and oxygen conditions. Fluctuations in detrital element concentrations were mainly the consequence of wet/arid oscillations. Productivity has been established using Ba excess, according to which marine productivity appears to have been greatest during cold events Heinrich 1 and Younger Dryas. The S1 time interval was not as marked by increases in productivity as was the eastern Mediterranean. In contrast, the S1 interval was first characterized by a decreasing trend and then by a fall in productivity after the 8.2 ky BP dry-cold event. Since then productivity has remained low. Here we report that there was an important redox event in this basin, probably a consequence of the major oceanographic circulation change occurring in the western Mediterranean at 7.7 ky BP. This circulation change led to reventilation as well as to diagenetic remobilization of redox-sensitive elements and organic matter oxidation. Comparisons between our paleoceanographic reconstruction for this basin and those regarding other Mediterranean basins support the hypothesis that across the Mediterranean there were different types of responses to climate forcing mechanism. The Algero-Balearic basin is likely to be a key area for further understanding of the relationships between the North Atlantic and the eastern Mediterranean basins.

Oxygen isotopes and hydrocarbon composition of gas hydrate and hydrate water from ODP Leg 165 sites

Ocean Drilling Program (ODP) Leg 164 recovered a number of large solid gas hydrate from Sites 994, 996, and 997 on the Blake Ridge. Sites 994 and 997 samples, either nodular or thick massive pieces, were subjected to laboratory analysis and measurements to determine the structure, molecular and isotopic composition, thermal conductivity, and equilibrium dissociation conditions. X-ray computed tomography (CT) imagery, X-ray diffraction, nuclear magnetic resonance (NMR), and Raman spectroscopy have revealed that the gas hydrates recovered from the Blake Ridge are nearly 100% methane gas hydrate of Structure I, cubic with a lattice constant of a = 11.95 ± 0.05 angström, and a molar ratio of water to gas (hydration number) of 6.2. The d18O of water is 2.67 per mil to 3.51 per mil SMOW, which is 3.5-4.0 heavier than the ambient interstitial waters. The d13C and dD of methane are -66 per mil to -70 per mil and -201 per mil to -206 per mil, respectively, suggesting that the methane was generated through bacterial CO2 reduction. Thermal conductivity values of the Blake Ridge hydrates range from 0.3 to 0.5 W/(m K). Equilibrium dissociation experiments indicate that the three-phase equilibrium for the specimen is 3.27 MPa at 274.7 K. This is almost identical to that of synthetic pure methane hydrate in freshwater.

Chemical and isotopic compositions of rocks and minerals from the Ashadze and Logachev hydrothermal fields, Mid-Atlantic Ridge

This study was aimed at reconstructing a sequence of events in the magmatic and metamorphic evolution of peridotites, gabbroids, and trondhjemites from internal oceanic complexes of the Ashadze and Logachev hydrothermal vent fields. Collections of plutonic rocks from Cruises 22 and 26 of R/V "Professor Logachev", Cruise 41 of R/V "Akademik Mstislav Keldysh", and from the Serpentine Russian-French expedition aboard R/V "Pourquoi pas?" were objects of this study. Data reported here suggest that the internal oceanic complexes of the Ashadze and Logachev fields formed via the same scenario in these two regions of the Mid-Atlantic Ridge. On the other hand, an analysis of petrological and geochemical characteristics of the rocks indicated that the internal oceanic complexes of the MAR axial zone between 12°58'N and 14°45'N show pronounced petrological and geochemical heterogeneity manifested in variations in degree of depletion of mantle residues and in Nd isotopic compositions of rocks from the gabbro-peridotite association. Trondhjemites from the Ashadze hydrothermal field can be considered as partial melting products of gabbroids under influence of hydrothermal fluids. It was supposed that presence of trondhjemites in internal oceanic complexes of MAR can be used as a marker for the highest temperature deep-rooted hydrothermal systems. Perhaps, the region of the MAR axial zone, in which petrologically and geochemically contrasting internal oceanic complexes are spatially superimposed, serves as an area for development of large hydrothermal clusters with considerable ore-forming potential.

Fabrication of luminescent nanostructures by electron-beam direct writing of PMMA resist

We report on the conversion of non-luminescent conventional poly(methylmethacrylate) (PMMA)-based electron-beam resists into luminescent materials when used as negative-tone resists, that is, when exposed to high electron irradiation doses. Raman spectroscopy reveals the chemical transformation induced by electron irradiation which is responsible for the observed luminescence in the visible (blue) region. The emission intensity from exposed PMMA-based patterns can be controlled by the electron irradiation dose employed to create them.

Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

The use of laser beams as excitation sources for the characterization of semiconductor nanowires (NWs) is largely extended. Raman spectroscopy and photoluminescence (PL) are currently applied to the study of NWs. However, NWs are systems with poor thermal conductivity and poor heat dissipation, which result in unintentional heating under the excitation with a focused laser beam with microscopic size, as those usually used in microRaman and microPL experiments. On the other hand, the NWs have subwavelength diameter, which changes the optical absorption with respect to the absorption in bulk materials. Furthermore, the NW diameter is smaller than the laser beam spot, which means that the optical power absorbed by the NW depends on its position inside the laser beam spot. A detailed analysis of the interaction between a microscopic focused laser beam and semiconductor NWs is necessary for the understanding of the experiments involving laser beam excitation of NWs. We present in this work a numerical analysis of the thermal transport in Si NWs, where the heat source is the laser energy locally absorbed by the NW. This analysis takes account of the optical absorption, the thermal conductivity, the dimensions, diameter and length of the NWs, and the immersion medium. Both free standing and heat-sunk NWs are considered. Also, the temperature distribution in ensembles of NWs is discussed. This analysis intends to constitute a tool for the understanding of the thermal phenomena induced by laser beams in semiconductor NWs.

Highly conductive coatings of carbon black/silica composites obtained by a sol-gel process

Conductive submicronic coatings of carbon black (CB)/silica composites have been prepared by a sol-gel process and deposited by spray-coating on glazed porcelain tiles. Stable CB dispersions with surfactant were rheologically characterized to determine the optimum CB-surfactant ratio. The composites were analyzed by Differential Thermal and Thermogravimetric Analysis and Hg-Porosimetry. Thin coatings were thermally treated in the temperature range of 300-500degC in air atmosphere. The microstructure of the coatings was determined by scanning electron microscopy and the structure evaluated by confocal Raman spectroscopy. The electrical characterization of the samples was carried out using dc intensity-voltage curves. The coatings exhibit good adhesion, high density and homogeneous distribution of the conductive filler (CB) in the insulate matrix (silica) that protects against the thermal degradation of the CB nanoparticles during the sintering process. As consequence, the composite coatings show the lowest resistivity values for CB-based films reported in the literature, with values of ~7times10 -5Omegam.

In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation

In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.

Experimental and numerical study of cw green laser crystallization of a-Si:H thin films

Crystallization and grain growth technique of thin film silicon are among the most promising methods for improving efficiency and lowering cost of solar cells. A major advantage of laser crystallization and annealing over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the amorphous silicon thin film, melting it and changing the microstructure to polycrystalline silicon (poly-Si) as it cools. Depending on the laser density, the vaporization temperature can be reached at the center of the irradiated area. In these cases ablation effects are expected and the annealing process becomes ineffective. The heating process in the a-Si thin film is governed by the general heat transfer equation. The two dimensional non-linear heat transfer equation with a moving heat source is solve numerically using the finite element method (FEM), particularly COMSOL Multiphysics. The numerical model help to establish the density and the process speed range needed to assure the melting and crystallization without damage or ablation of the silicon surface. The samples of a-Si obtained by physical vapour deposition were irradiated with a cw-green laser source (Millennia Prime from Newport-Spectra) that delivers up to 15 W of average power. The morphology of the irradiated area was characterized by confocal laser scanning microscopy (Leica DCM3D) and Scanning Electron Microscopy (SEM Hitachi 3000N). The structural properties were studied by micro-Raman spectroscopy (Renishaw, inVia Raman microscope).

Thermal, stress, and traps effects in AlGaN/GaN HEMTs

GaN y AlN son materiales semiconductores piezoeléctricos del grupo III-V. La heterounión AlGaN/GaN presenta una elevada carga de polarización tanto piezoeléctrica como espontánea en la intercara, lo que genera en su cercanía un 2DEG de grandes concentración y movilidad. Este 2DEG produce una muy alta potencia de salida, que a su vez genera una elevada temperatura de red. Las tensiones de puerta y drenador provocan un stress piezoeléctrico inverso, que puede afectar a la carga de polarización piezoeléctrica y así influir la densidad 2DEG y las características de salida. Por tanto, la física del dispositivo es relevante para todos sus aspectos eléctricos, térmicos y mecánicos. En esta tesis se utiliza el software comercial COMSOL, basado en el método de elementos finitos (FEM), para simular el comportamiento integral electro-térmico, electro-mecánico y electro-térmico-mecánico de los HEMTs de GaN. Las partes de acoplamiento incluyen el modelo de deriva y difusión para el transporte electrónico, la conducción térmica y el efecto piezoeléctrico. Mediante simulaciones y algunas caracterizaciones experimentales de los dispositivos, hemos analizado los efectos térmicos, de deformación y de trampas. Se ha estudiado el impacto de la geometría del dispositivo en su auto-calentamiento mediante simulaciones electro-térmicas y algunas caracterizaciones eléctricas. Entre los resultados más sobresalientes, encontramos que para la misma potencia de salida la distancia entre los contactos de puerta y drenador influye en generación de calor en el canal, y así en su temperatura. El diamante posee une elevada conductividad térmica. Integrando el diamante en el dispositivo se puede dispersar el calor producido y así reducir el auto-calentamiento, al respecto de lo cual se han realizado diversas simulaciones electro-térmicas. Si la integración del diamante es en la parte superior del transistor, los factores determinantes para la capacidad disipadora son el espesor de la capa de diamante, su conductividad térmica y su distancia a la fuente de calor. Este procedimiento de disipación superior también puede reducir el impacto de la barrera térmica de intercara entre la capa adaptadora (buffer) y el substrato. La muy reducida conductividad eléctrica del diamante permite que pueda contactar directamente el metal de puerta (muy cercano a la fuente de calor), lo que resulta muy conveniente para reducir el auto-calentamiento del dispositivo con polarización pulsada. Por otra parte se simuló el dispositivo con diamante depositado en surcos atacados sobre el sustrato como caminos de disipación de calor (disipador posterior). Aquí aparece una competencia de factores que influyen en la capacidad de disipación, a saber, el surco atacado contribuye a aumentar la temperatura del dispositivo debido al pequeño tamaño del disipador, mientras que el diamante disminuiría esa temperatura gracias a su elevada conductividad térmica. Por tanto, se precisan capas de diamante relativamente gruesas para reducer ele efecto de auto-calentamiento. Se comparó la simulación de la deformación local en el borde de la puerta del lado cercano al drenador con estructuras de puerta estándar y con field plate, que podrían ser muy relevantes respecto a fallos mecánicos del dispositivo. Otras simulaciones se enfocaron al efecto de la deformación intrínseca de la capa de diamante en el comportamiento eléctrico del dispositivo. Se han comparado los resultados de las simulaciones de la deformación y las características eléctricas de salida con datos experimentales obtenidos por espectroscopía micro-Raman y medidas eléctricas, respectivamente. Los resultados muestran el stress intrínseco en la capa producido por la distribución no uniforme del 2DEG en el canal y la región de acceso. Además de aumentar la potencia de salida del dispositivo, la deformación intrínseca en la capa de diamante podría mejorar la fiabilidad del dispositivo modulando la deformación local en el borde de la puerta del lado del drenador. Finalmente, también se han simulado en este trabajo los efectos de trampas localizados en la superficie, el buffer y la barrera. Las medidas pulsadas muestran que tanto las puertas largas como las grandes separaciones entre los contactos de puerta y drenador aumentan el cociente entre la corriente pulsada frente a la corriente continua (lag ratio), es decir, disminuir el colapse de corriente (current collapse). Este efecto ha sido explicado mediante las simulaciones de los efectos de trampa de superficie. Por su parte, las referidas a trampas en el buffer se enfocaron en los efectos de atrapamiento dinámico, y su impacto en el auto-calentamiento del dispositivo. Se presenta también un modelo que describe el atrapamiento y liberación de trampas en la barrera: mientras que el atrapamiento se debe a un túnel directo del electrón desde el metal de puerta, el desatrapamiento consiste en la emisión del electrón en la banda de conducción mediante túnel asistido por fonones. El modelo también simula la corriente de puerta, debida a la emisión electrónica dependiente de la temperatura y el campo eléctrico. Además, también se ilustra la corriente de drenador dependiente de la temperatura y el campo eléctrico. ABSTRACT GaN and AlN are group III-V piezoelectric semiconductor materials. The AlGaN/GaN heterojunction presents large piezoelectric and spontaneous polarization charge at the interface, leading to high 2DEG density close to the interface. A high power output would be obtained due to the high 2DEG density and mobility, which leads to elevated lattice temperature. The gate and drain biases induce converse piezoelectric stress that can influence the piezoelectric polarization charge and further influence the 2DEG density and output characteristics. Therefore, the device physics is relevant to all the electrical, thermal, and mechanical aspects. In this dissertation, by using the commercial finite-element-method (FEM) software COMSOL, we achieved the GaN HEMTs simulation with electro-thermal, electro-mechanical, and electro-thermo-mechanical full coupling. The coupling parts include the drift-diffusion model for the electron transport, the thermal conduction, and the piezoelectric effect. By simulations and some experimental characterizations, we have studied the device thermal, stress, and traps effects described in the following. The device geometry impact on the self-heating was studied by electro-thermal simulations and electrical characterizations. Among the obtained interesting results, we found that, for same power output, the distance between the gate and drain contact can influence distribution of the heat generation in the channel and thus influence the channel temperature. Diamond possesses high thermal conductivity. Integrated diamond with the device can spread the generated heat and thus potentially reduce the device self-heating effect. Electro-thermal simulations on this topic were performed. For the diamond integration on top of the device (top-side heat spreading), the determinant factors for the heat spreading ability are the diamond thickness, its thermal conductivity, and its distance to the heat source. The top-side heat spreading can also reduce the impact of thermal boundary resistance between the buffer and the substrate on the device thermal behavior. The very low electrical conductivity of diamond allows that it can directly contact the gate metal (which is very close to the heat source), being quite convenient to reduce the self-heating for the device under pulsed bias. Also, the diamond coated in vias etched in the substrate as heat spreading path (back-side heat spreading) was simulated. A competing mechanism influences the heat spreading ability, i.e., the etched vias would increase the device temperature due to the reduced heat sink while the coated diamond would decrease the device temperature due to its higher thermal conductivity. Therefore, relative thick coated diamond is needed in order to reduce the self-heating effect. The simulated local stress at the gate edge of the drain side for the device with standard and field plate gate structure were compared, which would be relevant to the device mechanical failure. Other stress simulations focused on the intrinsic stress in the diamond capping layer impact on the device electrical behaviors. The simulated stress and electrical output characteristics were compared to experimental data obtained by micro-Raman spectroscopy and electrical characterization, respectively. Results showed that the intrinsic stress in the capping layer caused the non-uniform distribution of 2DEG in the channel and the access region. Besides the enhancement of the device power output, intrinsic stress in the capping layer can potentially improve the device reliability by modulating the local stress at the gate edge of the drain side. Finally, the surface, buffer, and barrier traps effects were simulated in this work. Pulsed measurements showed that long gates and distances between gate and drain contact can increase the gate lag ratio (decrease the current collapse). This was explained by simulations on the surface traps effect. The simulations on buffer traps effects focused on illustrating the dynamic trapping/detrapping in the buffer and the self-heating impact on the device transient drain current. A model was presented to describe the trapping and detrapping in the barrier. The trapping was the electron direct tunneling from the gate metal while the detrapping was the electron emission into the conduction band described by phonon-assisted tunneling. The reverse gate current was simulated based on this model, whose mechanism can be attributed to the temperature and electric field dependent electron emission in the barrier. Furthermore, the mechanism of the device bias via the self-heating and electric field impact on the electron emission and the transient drain current were also illustrated.

Novel poly(3-hydroxybutyrate) nanocomposites containing WS2 inorganic nanotubes with improved thermal, mechanical and tribological properties

Poly(3-hydroxybutyrate) (PHB) nanocomposites containing environmentally-friendly tungsten disulphide inorganic nanotubes (INTeWS2) have been successfully prepared by a simple solution blending method. The dynamic and isothermal crystallization studies by differential scanning calorimetry (DSC) demonstrated that the INTeWS2 exhibits much more prominent nucleation activity on the crystallization of PHB than specific nucleating agents or other nanoscale fillers. Both crystallization rate and crystallinity significantly increase in the nanocomposites compared to neat PHB. These changes occur without modifying the crystalline structure of PHB in the nanocomposites, as shown by wide-angle X-ray diffraction (WAXS) and infrared/Raman spectroscopy. Other parameters such as the Avrami exponent, the equilibrium melting temperature, global rate constant and the fold surface free energy of PHB chains in the nanocomposites were obtained from the calorimetric data in order to determine the influence of the INTeWS2 filler. The addition of INTeWS2 remarkably influences the energetics and kinetics of nucleation and growth of PHB, reducing the fold surface free energy by up to 20%. Furthermore, these nanocomposites also show an improvement in both tribological and mechanical (hardness and modulus) properties with respect to pure PHB evidenced by friction and nanoindentation tests, which is of important potential interest for industrial and medical applications.

Caracterização e aplicação analítica de eletrodos modificados com sistemas porfirínicos supramoleculares

Estudos com eletrodos modificados foram conduzidos utilizando dois sistemas porfirínicos supramoleculares diferentes. O primeiro foi baseado na modificação de eletrodo de carbono vítreo com uma porfirina de níquel tetrarrutenada, [NiIITPyP{RuII(bipy)2Cl}4]4+. A modificação do eletrodo foi realizada por meio de sucessivos ciclos voltamétricos em meio alcalino (pH 13), gerando um eletrodo com característica similar a eletrodos modificados com α-Ni(OH)2. A caracterização química do filme formado foi realizada através das técnicas de voltametria cíclica, ressonância paramagnética eletrônica, espectroscopia eletrônica por reflectância e espectroscopia Raman com ensaio espectro-eletroquímico. Os resultados sugerem a formação de um polímero de coordenação, [µ-O2-NiIITPyP{RuII(bipy)2Cl}4]n, composto por subunidades porfirínicas ligadas entre si por pontes µ-peroxo axialmente coordenadas aos átomos de níquel (Ni-O-O-Ni). O crescimento do filme apresentou dependência da alcalinidade do meio pela formação do precursor octaédrico [Ni(OH)2TRPyP]2+ em solução, pela coordenação de OH- nas posições axiais do átomo de níquel. O processo de eletropolimerização indicou a participação de radical hidroxil, gerado por oxidação eletrocatalítica da água nos sítios periféricos da porfirina contendo o complexo de rutênio. O mesmo eletrodo foi aplicado como sensor eletroquímico para análise amperométrica de ácido fólico em comprimidos farmacêuticos. O sensor foi associado a um sistema de Batch Injection Analysis (BIA) alcançando considerável rapidez e baixo limite de detecção. Para as análises das amostras também foi proposto um método para a remoção da lactose, que agia como interferente. O segundo estudo envolveu a modificação de eletrodos de carbono vítreo com diferentes hemoglobinas, naturais (HbA0, HbA2 e HbS) e sintéticas (Hb-PEG5K2, αα-Hb-PEG5K2 e BT-PEG5K4), para a avaliação da eficiência na redução eletrocatalítica de nitrito mediada por FeI-heme. Os filmes foram produzidos pela mistura de soluções das hemoglobinas com brometo de didodecildimetiltrimetilamônio (DDAB), aplicados nas superfícies com consecutiva evaporação, formando filmes estáveis. Os valores de potencial redox para os processos do grupo heme e a sua associação com a disponibilidade do grupo na proteína foram avaliados por voltametria cíclica. Os valores das constantes de velocidade, k, para redução de nitrito foram obtidos por cronoamperometria em -1,1 V (vs Ag/AgCl(KCl 3M)) que foram utilizados para estudo comparativo entre as espécies sintéticas para eventual aplicação clínica.

Junções moleculares e agregados de nanobastões de ouro: um estudo SERS

A Espectroscopia Raman Intensificada pela Superfície (SERS) é um efeito de intensificação da intensidade Raman de uma molécula adsorvida numa superfície metálica nanoestruturada. Esta característica permite a utilização do SERS na caracterização vibracional de sistemas como junções moleculares (JM) (JM são sistemas constituídos de fios moleculares sintetizados em junções do tipo metal|fiomolecular|metal) e, no entendimento de quais características morfológicas de agregados metálicos mais influenciariam no sinal SERS obtido. Portanto, esta tese apresenta os seguintes objetivos: (a) síntese e caracterização de substratos SERS ativos, nanoesferas (AuNE) e nanobastões (AuNB) de ouro e eletrodo de ouro ativado eletroquimicamente; (b) síntese e caracterização SERS de fios moleculares em JM; (c) estudo do acoplamento plasmônico entre as superfícies metálicas em JM; (d) correlação entre SERS - morfologia de agregados individuais de AuNB. Os fios moleculares estudados foram os da família das oligofeniliminas (OPI) e, no melhor do nosso entendimento, esta foi a primeira vez que fios moleculares desta família foram caracterizados por Raman e SERS. As JM apresentaram um comportamento SERS não esperado. Enquanto para o modo vibracional, v(CS), a intensidade da banda se apresentou constante com o aumento do espaçamento entre as nanoestruturas metálicas (para distâncias de até 5 nm), o modo vibracional, β(CH), teve a intensidade de sua banda aumentada. Este comportamento foi explicado considerando a diferente natureza da interação dos plasmons nas JM, sendo estas interações do tipo, ressonância de plasmon de superfície (LSPR) - dipolo imagem, para ambos os modos. No entanto, para o modo β(CH) existe também uma intensificação extra devido ao aumento da polarizabilidade dos fios moleculares com o aumento do número de unidades. A correlação SERS - morfologia dos agregados de AuNB indicam que, para agregados onde predominam interações ponta a ponta, os espectros SERS apresentavam uma maior intensidade quando comparados com aqueles em que interações lado a lado predominavam. No entanto, este comportamento não foi observado para agregados contendo mais do que cinco nanopartículas onde estes dois tipos de interações ocorrem indicando que deve existir um acoplamento dos plasmons destes dois tipos de interações contribuindo para maiores valores de intensidade SERS.

Caracterização vibracional e térmica de compósitos de LLDPES modificados e sílica (OU) Caracterização vibracional e térmica de compósitos de lldpe\'s funcionallzados e sílica de superfície modificada

Compósitos de polímeros de polietileno linear de baixa densidade (LLDPE) possuem baixo desempenho mecânico devido principalmente à sua fraca interação, intermolecular, entre a cadeia polimérica e a carga. Uma maneira de minimizar esse baixo desempenho mecânico se faz com a mudança da estrutura química da poliolefina com a inserção de um grupo polar a sua cadeia, ou seja, faz-se a funcionalização das poliolefinas. O sistema de funcionalização adotado foi o processamento reativo, no qual foi utilizado para este sistema de processamento o misturador de dupla rosca acoplado a um reâmetro de torque. Neste trabalho, os grupos polares inseridos à cadeia dos polímeros de LLDPE\'s de copolímeros 1-buteno e 1-octeno (LLDPE-but e LLDPE-oct) foram o anidrido maléico (AM) e o anidrido tetrahidroftálico (ATF). Para a confecção dos compósitos foram utilizadas as cargas de microesferas de sílica modificada, no qual foi inserido compostos silanados em sua superfície (3-aminopropilsilano - APS - e trimetoxiclorosilano TMCISi) para estudo de interação com as poliolefinas funcionalizadas. Neste trabalho foram realizados ensaios de caracterização térmica, vibracional além de análises de torque do polímero fundido, análises do grau de reticulação e ensaios mecânicos de tração por elongação. Na caracterização térmica foram utilizadas as técnicas: termogravimetria (TG) e calorimetria exploratória diferencial (DSC). Na caracterização vibracional utilizou-se a espectroscopia fotoacústica no infravermelho (PAS-IR) e a espectroscopia de espalhamento Raman. Pela técnica PAS-IR foi possível comprovar a inserção dos anidridos à cadeia das poliolefinas assim como foi possível verificar a interação entre o polímero funcionalizado e a carga. Pelas técnicas térmicas de DSC e TG foi possível verificar mudanças das propriedades do compósito frente aos polímeros originais ou funcionalizados. Os ensaios mecânicos comprovaram que os compósitos de polímeros funcionalizados possuem maior elongação e tensão à ruptura comparada aos compósitos dos LLDPE\'s não funcionalizados

Desenvolvimento de materiais nanoestruturados à base de SiO2-Nb2O5 preparados por uma nova rota sol-gel com aplicações em fotônica

Este trabalho concentra-se na preparação e caracterizações estrutural e espectroscópica de materiais nanoestruturados à base de SiO2-Nb2O5 dopados e codopados com íons Er3+, Yb3+ e Eu3+ na forma de pós e guias de onda planares. Os nanocompósitos foram preparados através de uma nova rota sol-gel utilizando óxido de nióbio como precursor em substituição ao alcóxido de nióbio. A correlação estrutura propriedades luminescentes foi estudada por difração de raios X, microscopia eletrônica de transmissão, espectroscopia vibracional de absorção no infravermelho, espectroscopia vibracional de espalhamento Raman, análise térmica, reflectância difusa e especular, espectroscopia de fotoluminescência e acoplamento M-line. Inicialmente foi avaliado a influência da concentração de nióbio nas propriedades estruturais e luminescentes de nanocompósitos (100-x)Si-xNb dopados e codopados com íons Er3+, Yb3+ e Eu3+ tratados termicamente a 900 °C por 3h. A cristalização do Nb2O5 foi dependente da concentração de Nb na matriz, com a distribuição dos íons lantanídeos preferencialmente no Nb2O5, afetando as propriedades luminescentes. Para os nanocompósitos codopados com íons Er3+ e Yb3+ foram obtidos valores de largura de banda a meia altura (FWHM) da ordem de 70 nm na região de 1550 nm e tempos de vida de até 5,2 ms. A emissão na região do visível, decorrente de processos de conversão ascendente, revelou-se dependente da concentração de nióbio. Foi verificada emissão preferencial na região do verde para menores concentrações de Nb. Enquanto que, para as maiores concentrações, processos de relaxação cruzada levaram a um aumento relativo na intensidade de emissão na região do vermelho. A eficiência quântica de emissão dos nanocompósitos (100-x)Si-xNb dopados com Eu3+ variou com o comprimento de onda de excitação, refletindo os diferentes sítios de simetria ocupados por este íons nesta estrutura complexa. A influência da temperatura de tratamento térmico no processo de cristalização do Nb2O5 em nanocompósitos 70Si:30Nb codopados com íons Er3+ e Yb3+ foi avaliada. Material amorfo foi obtido a 700 °C enquanto que a 900 e 1100 °C foram identificas as fases ortorrômbica (fase T) e monoclínica (fase M) do Nb2O5. Intensa emissão na região de 1550 nm com valores de FWHM de 52 e 67 nm e tempos de vida de 5,6 e 5,4 ms foram verificados a 700 e 900 °C sob excitação em 977 nm, respectivamente. Por fim, foram obtidos guias de onda planares com excelentes propriedades ópticas e com grande potencial de aplicação em dispositivos de amplificação óptica. Especificamente, materiais fotônicos com banda larga de emissão na região do infravermelho foram preparados, indicando fortemente a potencialidade para a aplicação em telecomunicações envolvendo não somente a banda C como também as bandas L e S em materiais contendo somente íons Er3+ como centros emissores.