Controlling the transport of an ion: classical and quantum mechanical solutions

The accurate transport of an ion over macroscopic distances represents a challenging control problem due to the different length and time scales that enter and the experimental limitations on the controls that need to be accounted for. Here, we investigate the performance of different control techniques for ion transport in state-of-the-art segmented miniaturized ion traps. We employ numerical optimization of classical trajectories and quantum wavepacket propagation as well as analytical solutions derived from invariant based inverse engineering and geometric optimal control. The applicability of each of the control methods depends on the length and time scales of the transport. Our comprehensive set of tools allows us make a number of observations. We find that accurate shuttling can be performed with operation times below the trap oscillation period. The maximum speed is limited by the maximum acceleration that can be exerted on the ion. When using controls obtained from classical dynamics for wavepacket propagation, wavepacket squeezing is the only quantum effect that comes into play for a large range of trapping parameters. We show that this can be corrected by a compensating force derived from invariant based inverse engineering, without a significant increase in the operation time.

Femtosecond wavepacket interferometry using the rotational dynamics of a trapped cold molecular ion

A Ramsey-type interferometer is suggested, employing a cold trapped ion and two time-delayed offresonant femtosecond laser pulses. The laser light couples to the molecular polarization anisotropy, inducing rotational wavepacket dynamics. An interferogram is obtained from the delay dependent populations of the final field-free rotational states. Current experimental capabilities for cooling and preparation of the initial state are found to yield an interferogram visibility of more than 80%. The interferograms can be used to determine the polarizability anisotropy with an accuracy of about ±2%, respectively ±5%, provided the uncertainty in the initial populations and measurement errors are confined to within the same limits.

Investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling

Holes with different sizes from microscale to nanoscale were directly fabricated by focused ion beam (FIB) milling in this paper. Maximum aspect ratio of the fabricated holes can be 5:1 for the hole with large size with pure FIB milling, 10:1 for gas assistant etching, and 1:1 for the hole with size below 100 nm. A phenomenon of volume swell at the boundary of the hole was observed. The reason maybe due to the dose dependence of the effective sputter yield in low intensity Gaussian beam tail regions and redeposition. Different materials were used to investigate variation of the aspect ratio. The results show that for some special material, such as Ni-Be, the corresponding aspect ratio can reach 13.8:1 with Cl₂ assistant etching, but only 0.09:1 for Si(100) with single scan of the FIB.

A Two-level Prediction Model for Deep Reactive Ion Etch (DRIE)

We contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of microelectromechanical systems (MEMS) devices. Deep reactive ion etch is commonly used in MEMS fabrication where high-aspect ratio features are to be produced in silicon. It is typical for many supposedly identical devices, perhaps of diameter 10 mm, to be etched simultaneously into one silicon wafer of diameter 150 mm. Etch non-uniformity depends on uneven distributions of ion and neutral species at the wafer level, and on local consumption of those species at the device, or die, level. An ion–neutral synergism model is constructed from data obtained from etching several layouts of differing pattern opening densities. Such a model is used to predict wafer-level variation with an r.m.s. error below 3%. This model is combined with a die-level model, which we have reported previously, on a MEMS layout. The two-level model is shown to enable prediction of both within-die and wafer-scale etch rate variation for arbitrary wafer loadings.

Tubular Organization of SnO₂ Nanocrystallites for Improved Lithium Ion Battery Anode Performance

Porous tin oxide nanotubes were obtained by vacuum infiltration of tin oxide nanoparticles into porous aluminum oxide membranes, followed by calcination. The porous tin oxide nanotube arrays so prepared were characterized by FE-SEM, TEM, HRTEM, and XRD. The nanotubes are open-ended, highly ordered with uniform cross-sections, diameters and wall thickness. The tin oxide nanotubes were evaluated as a substitute anode material for the lithium ion batteries. The tin oxide nanotube anode could be charged and discharged repeatedly, retaining a specific capacity of 525 mAh/g after 80 cycles. This capacity is significantly higher than the theoretical capacity of commercial graphite anode (372 mAh/g) and the cyclability is outstanding for a tin based electrode. The cyclability and capacities of the tin oxide nanotubes were also higher than their building blocks of solid tin oxide nanoparticles. A few factors accounting for the good cycling performance and high capacity of tin oxide nanotubes are suggested.

Modelling scenarios of diffusion and control of pandemic influenza, italy

En aquest article es resumeixen els resultats publicats en un informe de l' ISS (Istituto Superiore di Sanità) del desembre de 2006, sobre un model matemàtic desenvolupat per un grup de treball que inclou a investigadors de les Universitats de Trento, Pisa i Roma, i els Instituts Nacionals de Salut (Istituto Superiore di Sanità, ISS), per avaluar i mesurar l'impacte de la transmissió i el control de la pandèmia de grip

An estimation of the pattern of diffusion of mobile phones: the case of Colombia

In this paper we find that the diffusion pattern of mobile telephony in Colombia can be best characterised as following a Logistic curve. Although in recent years the rate of growth of mobile phone subscribers has started to slow down, we find evidence that there is still room for further expansion as the saturation level is expected to be reached in five years time. The estimated saturation level is consistent with some individuals possessing more than one mobile device.

Diffusion of ICT related problems among students : the teachers??? experience

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Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05ion in line with layer thickness is due to the atomic diffusion at the surface during growth, induced by the strain inhomogeneities that arise from stress relaxation. In consequence, the strain variations present in the layer are converted into composition variations during growth. This process is energetically favorable as it diminishes elastic energy. An additional support to this hypothesis is given by a clear proportionality between the magnitude of the composition variations and the mean strain

A Monte Carlo-Based Fiber Tracking Algorithm using Diffusion Tensor MRI

Diffusion tensor magnetic resonance imaging, which measures directional information of water diffusion in the brain, has emerged as a powerful tool for human brain studies. In this paper, we introduce a new Monte Carlo-based fiber tracking approach to estimate brain connectivity. One of the main characteristics of this approach is that all parameters of the algorithm are automatically determined at each point using the entropy of the eigenvalues of the diffusion tensor. Experimental results show the good performance of the proposed approach

Visualitzation and processing of diffusion tensor MRI

Diffusion Tensor Imaging (DTI) is a new magnetic resonance imaging modality capable of producing quantitative maps of microscopic natural displacements of water molecules that occur in brain tissues as part of the physical diffusion process. This technique has become a powerful tool in the investigation of brain structure and function because it allows for in vivo measurements of white matter fiber orientation. The application of DTI in clinical practice requires specialized processing and visualization techniques to extract and represent acquired information in a comprehensible manner. Tracking techniques are used to infer patterns of continuity in the brain by following in a step-wise mode the path of a set of particles dropped into a vector field. In this way, white matter fiber maps can be obtained.