913 resultados para Electroluminescent device


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A Thermodynamic air-standard cycle was envisaged for Ranque-Hilsh (R-H) or Vortex Tubes to provide relevant Thermodynamic analysis and tools for setting operating limits according to the conservation laws of mass and energy, as well as the constraint of the Second Law of Thermodynamics. The study used an integral or control volume approach and resulted in establishing working equations for evaluating the performance of an R-H tube. The work proved that the coefficient of performance does not depend on the R-H tube operating mode, i.e., the same value is obtained independently if the R-H tube operates either as a heat pump or as a refrigeration device. It was also shown that the isentropic coefficient of performance displays optima values of cold and hot mass fractions for a given operating pressure ratio. Finally, the study was concluded by comparing the present analysis with some experimental data available in the literature for operating pressures ranging 2-11 atm. (C) 2010 Elsevier Ltd and IIR. All rights reserved.

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The purpose of this study was to investigate the respiratory protective device selection process and to identify changes in this process when an exposure limit value is updated. Two previous studies conducted in mining industries in the metropolitan area of Sao Paulo were put through the respiratory protective device selection process. The protection factors of the equipment provided by the companies were compared with the required protection factors and with the FUNDACENTRO`s respiratory protection program. The results showed that until 2005, some companies were providing inadequate protection, and after the change in crystalline silica exposure limit value in 2006, all the analyzed companies were providing inadequate respirators. This study suggests that there is an opportunity to create a web portal, where the selection process can be done by the companies with updated information.

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A matrix method is presented for simulating acoustic levitators. A typical acoustic levitator consists of an ultrasonic transducer and a reflector. The matrix method is used to determine the potential for acoustic radiation force that acts on a small sphere in the standing wave field produced by the levitator. The method is based on the Rayleigh integral and it takes into account the multiple reflections that occur between the transducer and the reflector. The potential for acoustic radiation force obtained by the matrix method is validated by comparing the matrix method results with those obtained by the finite element method when using an axisymmetric model of a single-axis acoustic levitator. After validation, the method is applied in the simulation of a noncontact manipulation system consisting of two 37.9-kHz Langevin-type transducers and a plane reflector. The manipulation system allows control of the horizontal position of a small levitated sphere from -6 mm to 6 mm, which is done by changing the phase difference between the two transducers. The horizontal position of the sphere predicted by the matrix method agrees with the horizontal positions measured experimentally with a charge-coupled device camera. The main advantage of the matrix method is that it allows simulation of non-symmetric acoustic levitators without requiring much computational effort.

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Flow pumps have been developed for classical applications in Engineering, and are important instruments in areas such as Biology and Medicine. Among applications for this kind of device we notice blood pump and chemical reagents dosage in Bioengineering. Furthermore, they have recently emerged as a viable thermal management solution for cooling applications in small-scale electronic devices. This work presents the performance study of a novel principle of a piezoelectric flow pump which is based oil the use of a bimorph piezoelectric actuator inserted in fluid (water). Piezoelectric actuators have some advantages over classical devices, such as lower noise generation and ease of miniaturization. The main objective is the characterization of this piezoelectric pump principle through computational simulations (using finite element software), and experimental tests through a manufactured prototype. Computational data, Such as flow rate and pressure curves, have also been compared with experimental results for validation purposes. (C) 2009 Elsevier B.V. All rights reserved.

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Piezoresistive materials, materials whose resistivity properties change when subjected to mechanical stresses, are widely utilized in many industries as sensors, including pressure sensors, accelerometers, inclinometers, and load cells. Basic piezoresistive sensors consist of piezoresistive devices bonded to a flexible structure, such as a cantilever or a membrane, where the flexible structure transmits pressure, force, or inertial force due to acceleration, thereby causing a stress that changes the resistivity of the piezoresistive devices. By applying a voltage to a piezoresistive device, its resistivity can be measured and correlated with the amplitude of an applied pressure or force. The performance of a piezoresistive sensor is closely related to the design of its flexible structure. In this research, we propose a generic topology optimization formulation for the design of piezoresistive sensors where the primary aim is high response. First, the concept of topology optimization is briefly discussed. Next, design requirements are clarified, and corresponding objective functions and the optimization problem are formulated. An optimization algorithm is constructed based on these formulations. Finally, several design examples of piezoresistive sensors are presented to confirm the usefulness of the proposed method.

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High temperature gas nitrided AISI 304L austenitic stainless steel containing 0.55 wt% N in solid solution, was corrosion, erosion and corrosion-erosion tested in a jet-like device, using slurry composed of 3.5% NaCl and quartz particles. Scanning electron microscopy analysis of the damaged surfaces, mass loss measurements and electrochemical test results were used to understand the effect of nitrogen on the degradation mechanisms. Increasing the nitrogen content improved the corrosion, erosion and corrosion-erosion resistance of the AISI 304L austenitic stainless steel. Smoother wear mark contours observed on the nitrided surfaces indicate a positive effect of nitrogen on the reduction of the corrosion-erosion synergism. (C) 2011 Elsevier Ltd. All rights reserved.

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Properties of hybrid films can be enhanced if their molecular architecture is controlled. In this paper, poly (p-phenylene vinylene) was mixed with stearic acid in order to form stable hybrid Langmuir monolayers. Surface properties of these films were investigated with measurements of surface pressure, and also with polarization modulation infrared reflection-absorption spectroscopy (PM-IRRAS). The films were transferred from the air-water interface to solid supports through the Langmuir-Blodgett technique, and the viability of the film as optical device was investigated with fluorescence spectroscopy. Comparing the fluorescent spectra for the polymer in solution, as a casting film, and as an LB film, the emission bands for LB films were narrower and appeared at lower wavelengths. The interactions between the film components and the design for the LB film may take advantage of the method to immobilize luminescent polymers in mixed ultrathin films adsorbed in solid matrices. (C) 2011 Elsevier B.V. All rights reserved.

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In this work, the behavior of an AISI 410 martensitic stainless steel under corrosion-erosion conditions is evaluated. Quenched and tempered samples were used for the wear test, using a low velocity jet-like device connected to a potentiostat. Potentiodynamic polarization curves were obtained with the electrolyte in static state, with flow conditions and under corrosion-erosion, adding quartz particles to the electrolyte. In addition, mass loss measurements under erosion and corrosion-erosion conditions were carried out. The topography of the surfaces was examined after the wear tests, using optical and scanning electron microscopy. This information, together with the results of mass losses and the electrochemical tests were used to establish the degradation mechanisms of the stainless steels under different testing conditions. The results showed that synergism is a significant part of the degradation process of this steel (66.5%) and that the mass removal process of steel was controlled by corrosion assisted by erosion.

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A green ceramic tape micro-heat exchanger was developed using Low Temperature Co-fired Ceramics technology (LTCC). The device was designed by using Computational Aided Design software and simulations were made using a Computational Fluid Dynamics package (COMSOL Multiphysics) to evaluate the homogeneity of fluid distribution in the microchannels. Four geometries were proposed and simulated in two and three dimensions to show that geometric details directly affect the distribution of velocity in the micro-heat exchanger channels. The simulation results were quite useful for the design of the microfluidic device. The micro-heat exchanger was then constructed using the LTCC technology and is composed of five thermal exchange plates in cross-flow arrangement and two connecting plates, with all plates stacked to form a device with external dimensions of 26 x 26 x 6 mm(3).

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A solar energy powered failing film evaporator with film promoter was developed for concentrating diluted solutions (industrial effluents). The procedure proposed here does not emit CO(2), making it a viable alternative to the method of concentrating solutions that uses vapor as a heat source and releases CO(2) from burning fuel oil in a furnace, in direct opposition to the carbon reduction agreement established by the Kyoto protocol. This novel device consists of the following components: a flat plate solar collector with adjustable inclination, a film promoter (adhering to the collector), a liquid distributor, a concentrate collector. and accessories. The evaporation rate of the device was found to be affected both by the inclination of the collector and by the feed flow. The meteorological variables cannot be controlled, but were monitored constantly to ascertain the behavior of the equipment in response to the variations occurring throughout the day. Higher efficiencies were attained when the inclination of the collector was adjusted monthly, showing up to 36.4% higher values than when the collector remained in a fixed position. (c) 2008 Elsevier Ltd. All rights reserved.

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Modern Integrated Circuit (IC) design is characterized by a strong trend of Intellectual Property (IP) core integration into complex system-on-chip (SOC) architectures. These cores require thorough verification of their functionality to avoid erroneous behavior in the final device. Formal verification methods are capable of detecting any design bug. However, due to state explosion, their use remains limited to small circuits. Alternatively, simulation-based verification can explore hardware descriptions of any size, although the corresponding stimulus generation, as well as functional coverage definition, must be carefully planned to guarantee its efficacy. In general, static input space optimization methodologies have shown better efficiency and results than, for instance, Coverage Directed Verification (CDV) techniques, although they act on different facets of the monitored system and are not exclusive. This work presents a constrained-random simulation-based functional verification methodology where, on the basis of the Parameter Domains (PD) formalism, irrelevant and invalid test case scenarios are removed from the input space. To this purpose, a tool to automatically generate PD-based stimuli sources was developed. Additionally, we have developed a second tool to generate functional coverage models that fit exactly to the PD-based input space. Both the input stimuli and coverage model enhancements, resulted in a notable testbench efficiency increase, if compared to testbenches with traditional stimulation and coverage scenarios: 22% simulation time reduction when generating stimuli with our PD-based stimuli sources (still with a conventional coverage model), and 56% simulation time reduction when combining our stimuli sources with their corresponding, automatically generated, coverage models.

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The harmonic distortion (HD) exhibited by un-strained and biaxially strained fin-shaped field-effect transistors operating in saturation as single-transistor amplifiers has been investigated for devices with different channel lengths L and fin widths W(fin). The study has been performed through device characterization, 3-D device simulations, and modeling. Nonlinearity has been evaluated in terms of second- and third-order HDs (HD2 and HD3, respectively), and a discussion on its physical sources has been carried out. Also, the influence of the open-loop voltage gain AV in HD has been observed.

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The trapezium is often a better approximation for the FinFET cross-section shape, rather than the design-intended rectangle. The frequent width variations along the vertical direction, caused by the etching process that is used for fin definition, may imply in inclined sidewalls and the inclination angles can vary in a significant range. These geometric variations may cause some important changes in the device electrical characteristics. This work analyzes the influence of the FinFET sidewall inclination angle on some relevant parameters for analog design, such as threshold voltage, output conductance, transconductance, intrinsic voltage gain (A V), gate capacitance and unit-gain frequency, through 3D numeric simulation. The intrinsic gain is affected by alterations in transconductance and output conductance. The results show that both parameters depend on the shape, but in different ways. Transconductance depends mainly on the sidewall inclination angle and the fixed average fin width, whereas the output conductance depends mainly on the average fin width and is weakly dependent on the sidewall inclination angle. The simulation results also show that higher voltage gains are obtained for smaller average fin widths with inclination angles that correspond to inverted trapeziums, i.e. for shapes where the channel width is larger at the top than at the transistor base because of the higher attained transconductance. When the channel top is thinner than the base, the transconductance degradation affects the intrinsic voltage gain. The total gate capacitances also present behavior dependent on the sidewall angle, with higher values for inverted trapezium shapes and, as a consequence, lower unit-gain frequencies.

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FinFETs are recognized as promising candidates for the CMOS nanometer era. In this paper the most recent results for cryogenic operation of FinFETs will be demonstrated with special emphasis on analog applications. Threshold voltage, subthreshold slope and carrier mobility will be studied. Also some important figures of merit for analog circuit operation as for readout electronics, such as transconductance, output conductance and intrinsic voltage gain will be covered. It is demonstrated that the threshold voltage of undoped narrow FinFETs is less temperature-dependent than for a planar single-gate device with similar doping concentration. The temperature reduction improves the transconductance over drain current ratio in any operational region. On the other hand, the output conductance is degraded when the temperature is reduced. The combination of these effects shows that the intrinsic gain of a L = 90 nm FinFET is degraded by 2 dB when the temperature reduces from 300 K to 100 K. (C) 2009 Elsevier Ltd. All rights reserved.

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This work characterizes the analog performance of SOI n-MuGFETs with HfSiO gate dielectric and TiN metal gate with respect to the influence of the high-k post-nitridation. TiN thickness and device rotation. A thinner TiN metal gate is found favorable for improved analog characteristics showing an increase in intrinsic voltage gain. The devices where the high-k material is subjected to a nitridation step indicated a degradation of the Early voltage (V(EA)) values which resulted in a lower voltage gain. The 45 degrees rotated devices have a smaller V(EA) than the standard ones when a HfSiO dielectric is used. However, the higher transconductance of these devices, due to the increased mobility in the (1 0 0) sidewall orientation, compensates this V(EA) degradation of the voltage gain, keeping it nearly equal to the voltage gain values of the standard devices. (C) 2011 Elsevier Ltd. All rights reserved.