Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots

N-shaped negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) is observed in a GaAs-based modulation-doped field effect transistor (MODFET) with InAs quantum dots (QDs) in the barrier layer (QDFET) compared with a GaAs MODFET. The NDR is explained as the real-space transfer (RST) of high-mobility electrons in a channel into nearby barrier layers with low mobility, and the PVR is enhanced dramatically upon inserting the QD layer. It is also revealed that the QD layer traps holes and acts as a positively charged nano-floating gate after a brief optical illumination, while it acts as a negatively charged nano-floating gate and depletes the adjacent channel when charged by the electrons. The NDR suggests a promising application in memory or high-speed logic devices for the QDFET structure.

Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites

An electrically bistable device has been fabricated using nanocomposite films consisting of silver nanoparticles and a semiconducting polymer by a simple spin-coating method. The current-voltage characteristics of the as-fabricated devices exhibit an obvious electrical bistability and negative differential resistance effect. The current ratio between the high-conducting state and low-conducting state can reach more than 103 at room temperature. The electrical bistability of the device is attributed to the electric-filed-induced charge transfer between the silver nanoparticles and the polymer, and the negative differential resistance behavior is related to the charge trapping in the silver nanoparticles. The results open up a simple approach to fabricate high quality electrically bistable devices by doping metal nanoparticles into polymer.

The thermal fatigue resistance of vermicular cast iron coupling with H13 steel units by cast-in process

This paper focuses on improving the thermal fatigue resistance on the surface of vermicular cast iron coupling with inserted H13 steel blocks that had different cross sections, by cast-in processing. The microstructure of bionic units was examined by scanning electron microscope. Micro-hardness and thermal fatigue resistance of bionic samples with varied cross sections and spacings were investigated, respectively. Results show that a marked metallurgical bonding zone was produced at interface between the inserted H13 steel block and the parent material - a unique feature of the bionic structure in the vermicular cast iron samples. The micro-hardness of the bionic samples has been significantly improved. Thermal resistance of the samples with the circular cross section was the highest and the bionics sample with spacing of 2 mm spacing had a much longer thermal fatigue life, thus resulting in the improvement for the thermal fatigue life of the bionic samples, due to the efficient preclusion for the generation and propagation of crack at the interface of H13 block and the matrix. Crown Copyright (c) 2010 Published by Elsevier Ltd. All rights reserved.

Enhanced Thermal Shock Resistance of Ceramics through Biomimetically Inspired Nanofins

We propose here a new method to make ceramics insensitive to thermal shock up to their melting temperature. In this method the surface of ceramics was biomimetically roughened into nanofinned surface that creates a thin air layer enveloping the surface of the ceramics during quenching. This air layer increases the heat transfer resistance of the surface of the ceramics by about 10 000 times so that the strong thermal gradient and stresses produced by the steep temperature difference in thermal shock did not occur both on the actual surface and in the interior of the ceramics. This method effectively extends the applications of existing ceramics in the extreme thermal environments.

Transition from the exhibition to the nonexhibition of negative differential thermal resistance in the two-segment Frenkel-Kontorova model

An extensive study of the one-dimensional two-segment Frenkel-Kontorova FK model reveals a transition from the counterintuitive existence to the ordinary nonexistence of a negative-differential-thermal-resistance NDTR regime, when the system size or the intersegment coupling constant increases to a critical value. A “phase” diagram which depicts the relevant conditions for the exhibition of NDTR was obtained. In the existence of a NDTR regime, the link at the segment interface is weak and therefore the corresponding exhibition of NDTR can be explained in terms of effective phonon-band shifts. In the case where such a regime does not exist, the theory of phonon-band mismatch is not applicable due to sufficiently strong coupling between the FK segments. The findings suggest that the behavior of a thermal transistor will depend critically on the properties of the interface and the system size.

Potential role of DNA-dependent protein kinase in cellular resistance to ionizing radiation

In this paper, we study the ability of DNA-PK-deficient (M059J) and -proficient (M059K) cells to undergo the rate of cellular proliferation, cell cycle distribution and apoptosis after 10 Gy X-ray irradiation, and the role of DNA-PK in radiosensitivity. The results showed that M059J cells exhibited hyper-radiosensitivity compared with M059K cells. A strong G2 phase arrest was observed in M059J cells post irradiation. Significant accumulation in the G2 phase in M059J cells was accompanied by apoptosis at 12 h. Altogether, the data suggested that DNA-PK may have two roles in mammalian cells after DNA damage, a role in DNA DSB repair and a second role in DNA-damaged cells to traverse a G2 checkpoint, by which DNA-PK may affect cellular sensitivity to ionizing radiation. 地址: [Li Ning; Zhang Hong; Wang Yanling; Hao Jifang] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China; [Li Ning; Zhang Hong; Wang Yanling; Hao Jifang] Key Lab Heavy Ion Radiat Med Gansu Prov, Lanzhou 730000, Peoples R China; [Li Ning; Wang Yanling] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China; [Wang Xiaohu] Gansu Tumor Hosp, Dept Radiotherapy, Lanzhou 730050, Peoples R China