Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

Direct Vlasov simulations of electron-attracting cylindrical Langmuir probes in flowing plasmas

Current collection by positively polarized cylindrical Langmuir probes immersed in flowing plasmas is analyzed using a non-stationary direct Vlasov-Poisson code. A detailed description of plasma density spatial structure as a function of the probe-to-plasma relative velocity U is presented. Within the considered parametric domain, the well-known electron density maximum close to the probe is weakly affected by U. However, in the probe wake side, the electron density minimum becomes deeper as U increases and a rarified plasma region appears. Sheath radius is larger at the wake than at the front side. Electron and ion distribution functions show specific features that are the signature of probe motion. In particular, the ion distribution function at the probe front side exhibits a filament with positive radial velocity. It corresponds to a population of rammed ions that were reflected by the electric field close to the positively biased probe. Numerical simulations reveal that two populations of trapped electrons exist: one orbiting around the probe and the other with trajectories confined at the probe front side. The latter helps to neutralize the reflected ions, thus explaining a paradox in past probe theory.

Optoelectronic tweezers under arbitrary illumination patterns: theoretical simulations and comparison to experiment

Photovoltaic tweezers are a promising tool to place and move particles on the surface of a photovoltaic material in a controlled way. To exploit this new technique it is necessary to accurately know the electric field created by a specific illumination on the surface of the crystal and above it. This paper describes a numerical algorithm to obtain this electric field generated by several relevant light patterns, and uses them to calculate the electrophoretic potential acting over neutral, polarizable particles in the proximity of the crystal. The results are compared to experiments carried out in LiNbO3 with good overall agreement.

Comparative theoretical analysis between parallel and perpendicular geometries for 2D particle patterning in photovoltaic ferroelectric substrates

This paper describes the dielectrophoretic potential created by the evanescent electric field acting on a particle near a photovoltaic crystal surface depending on the crystal cut. This electric field is obtained from the steady state solution of the Kukhtarev equations for the photovoltaic effect, where the diffusion term has been disregarded. First, the space charge field generated by a small, square, light spot where d _ l (being d a side of the square and l the crystal thickness) is studied. The surface charge density generated in both geometries is calculated and compared as their relation determines the different properties of the dielectrophoretic potential for both cuts. The shape of the dielectrophoretic potential is obtained and compared for several distances to the sample. Afterwards other light patterns are studied by the superposition of square spots, and the resulting trapping profiles are analysed. Finally the surface charge densities and trapping profiles for different d/l relations are studied.

Electron transport and azimuthal oscillations in hall thrusters

The Hall Effect Thruster (HET) is a type of satellite electric propulsion device initially developed in the 1960’s independently by USA and the former USSR. The development continued in the shadow during the 1970’s in the Soviet Union to reach a mature status from the technological point of view in the 1980’s. In the 1990’s the advanced state of this Russian technology became known in western countries, which rapidly restarted the analysis and development of modern Hall thrusters. Currently, there are several companies in USA, Russia and Europe manufacturing Hall thrusters for operational use. The main applications of these thrusters are low-thrust propulsion of interplanetary probes, orbital raising of satellites and stationkeeping of geostationary satellites. However, despite the well proven in-flight experience, the physics of the Hall Thruster are not completely understood yet. Over the last two decades large efforts have been dedicated to the understanding of the physics of Hall Effect thrusters. However, the so-called anomalous diffusion, short name for an excessive electron conductivity along the thruster, is not yet fully understood as it cannot be explained with classical collisional theories. One commonly accepted explanation is the existence of azimuthal oscillations with correlated plasma density and electric field fluctuations. In fact, there is experimental evidence of the presence of an azimuthal oscillation in the low frequency range (a few kHz). This oscillation, usually called spoke, was first detected empirically by Janes and Lowder in the 1960s. More recently several experiments have shown the existence of this type of oscillation in various modern Hall thrusters. Given the frequency range, it is likely that the ionization is the cause of the spoke oscillation, like for the breathing mode oscillation. In the high frequency range (a few MHz), electron-drift azimuthal oscillations have been detected in recent experiments, in line with the oscillations measured by Esipchuk and Tilinin in the 1970’s. Even though these low and high frequency azimuthal oscillations have been known for quite some time already, the physics behind them are not yet clear and their possible relation with the anomalous diffusion process remains an unknown. This work aims at analysing from a theoretical point of view and via computer simulations the possible relation between the azimuthal oscillations and the anomalous electron transport in HET. In order to achieve this main objective, two approaches are considered: local linear stability analyses and global linear stability analyses. The use of local linear stability analyses shall allow identifying the dominant terms in the promotion of the oscillations. However, these analyses do not take into account properly the axial variation of the plasma properties along the thruster. On the other hand, global linear stability analyses do account for these axial variations and shall allow determining how the azimuthal oscillations are promoted and their possible relation with the electron transport.

Electro y dielectroforesis de nanopartículas por efecto fotovoltaico

El objetivo de esta tesis doctoral es la investigación del nuevo concepto de pinzas fotovoltaicas, es decir, del atrapamiento, ordenación y manipulación de partículas en las estructuras generadas en la superficie de materiales ferroeléctricos mediante campos fotovoltaicos o sus gradientes. Las pinzas fotovoltaicas son una herramienta prometedora para atrapar y mover las partículas en la superficie de un material fotovoltaico de una manera controlada. Para aprovechar esta nueva técnica es necesario conocer con precisión el campo eléctrico creado por una iluminación específica en la superficie del cristal y por encima de ella. Este objetivo se ha dividido en una serie de etapas que se describen a continuación. La primera etapa consistió en la modelización del campo fotovoltaico generado por iluminación no homogénea en substratos y guías de onda de acuerdo al modelo de un centro. En la segunda etapa se estudiaron los campos y fuerzas electroforéticas y dielectroforéticas que aparecen sobre la superficie de substratos iluminados inhomogéneamente. En la tercera etapa se estudiaron sus efectos sobre micropartículas y nanopartículas, en particular se estudió el atrapamiento superficial determinando las condiciones que permiten el aprovechamiento como pinzas fotovoltaicas. En la cuarta y última etapa se estudiaron las configuraciones más eficientes en cuanto a resolución espacial. Se trabajó con distintos patrones de iluminación inhomogénea, proponiéndose patrones de iluminación al equipo experimental. Para alcanzar estos objetivos se han desarrollado herramientas de cálculo con las cuales obtenemos temporalmente todas las magnitudes que intervienen en el problema. Con estas herramientas podemos abstraernos de los complicados mecanismos de atrapamiento y a partir de un patrón de luz obtener el atrapamiento. Todo el trabajo realizado se ha llevado a cabo en dos configuraciones del cristal, en corte X ( superficie de atrapamiento paralela al eje óptico) y corte Z ( superficie de atrapamiento perpendicular al eje óptico). Se ha profundizado en la interpretación de las diferencias en los resultados según la configuración del cristal. Todas las simulaciones y experimentos se han realizado utilizando como soporte un mismo material, el niobato de litio, LiNbO3, con el f n de facilitar la comparación de los resultados. Este hecho no ha supuesto una limitación en los resultados pues los modelos no se limitan a este material. Con respecto a la estructura del trabajo, este se divide en tres partes diferenciadas que son: la introducción (I), la modelización del atrapamiento electroforético y dielectroforético (II) y las simulaciones numéricas y comparación con experimentos (III). En la primera parte se fijan las bases sobre las que se sustentarán el resto de las partes. Se describen los efectos electromagnéticos y ópticos a los que se hará referencia en el resto de los capítulos, ya sea por ser necesarios para describir los experimentos o, en otros casos, para dejar constancia de la no aparición de estos efectos para el caso en que nos ocupa y justificar la simplificación que en muchos casos se hace del problema. En esta parte, se describe principalmente el atrapamiento electroforético y dielectroforético, el efecto fotovoltaico y las propiedades del niobato de litio por ser el material que utilizaremos en experimentos y simulaciones. Así mismo, como no debe faltar en ninguna investigación, se ha analizado el state of the art, revisando lo que otros científicos del campo en el que estamos trabajando han realizado y escrito con el fin de que nos sirva de cimiento a la investigación. Con el capítulo 3 finalizamos esta primera parte describiendo las técnicas experimentales que hoy en día se están utilizando en los laboratorios para realizar el atrapamiento de partículas mediante el efecto fotovoltaico, ya que obtendremos ligeras diferencias en los resultados según la técnica de atrapamiento que se utilice. En la parte I I , dedicada a la modelización del atrapamiento, empezaremos con el capítulo 4 donde modelizaremos el campo eléctrico interno de la muestra, para a continuación modelizar el campo eléctrico, los potenciales y las fuerzas externas a la muestra. En capítulo 5 presentaremos un modelo sencillo para comprender el problema que nos aborda, al que llamamos Modelo Estacionario de Separación de Carga. Este modelo da muy buenos resultados a pesar de su sencillez. Pasamos al capítulo 6 donde discretizaremos las ecuaciones que intervienen en la física interna de la muestra mediante el método de las diferencias finitas, desarrollando el Modelo de Distribución de Carga Espacial. Para terminar esta parte, en el capítulo 8 abordamos la programación de las modelizaciones presentadas en los anteriores capítulos con el fn de dotarnos de herramientas para realizar las simulaciones de una manera rápida. En la última parte, III, presentaremos los resultados de las simulaciones numéricas realizadas con las herramientas desarrolladas y comparemos sus resultados con los experimentales. Fácilmente podremos comparar los resultados en las dos configuraciones del cristal, en corte X y corte Z. Finalizaremos con un último capítulo dedicado a las conclusiones, donde resumiremos los resultados que se han ido obteniendo en cada apartado desarrollado y daremos una visión conjunta de la investigación realizada. ABSTRACT The aim of this thesis is the research of the new concept of photovoltaic or optoelectronic tweezers, i.e., trapping, management and manipulation of particles in structures generated by photovoltaic felds or gradients on the surface of ferroelectric materials. Photovoltaic tweezers are a promising tool to trap and move the particles on the surface of a photovoltaic material in a monitored way. To take advantage of this new technique is necessary to know accurately the electric field created by a specifc illumination in the crystal surface and above it. For this purpose, the work was divided into the stages described below. The first stage consisted of modeling the photovoltaic field generated by inhomogeneous illumination in substrates and waveguides according to the one-center model. In the second stage, electrophoretic and dielectrophoretic fields and forces appearing on the surface of substrates and waveguides illuminated inhomogeneously were studied. In the third stage, the study of its effects on microparticles and nanoparticles took place. In particular, the trapping surface was studied identifying the conditions that allow its use as photovoltaic tweezers. In the fourth and fnal stage the most efficient configurations in terms of spatial resolution were studied. Different patterns of inhomogeneous illumination were tested, proposing lightning patterns to the laboratory team. To achieve these objectives calculation tools were developed to get all magnitudes temporarily involved in the problem . With these tools, the complex mechanisms of trapping can be simplified, obtaining the trapping pattern from a light pattern. All research was carried out in two configurations of crystal; in X section (trapping surface parallel to the optical axis) and Z section (trapping surface perpendicular to the optical axis). The differences in the results depending on the configuration of the crystal were deeply studied. All simulations and experiments were made using the same material as support, lithium niobate, LiNbO3, to facilitate the comparison of results. This fact does not mean a limitation in the results since the models are not limited to this material. Regarding the structure of this work, it is divided into three clearly differentiated sections, namely: Introduction (I), Electrophoretic and Dielectrophoretic Capture Modeling (II) and Numerical Simulations and Comparison Experiments (III). The frst section sets the foundations on which the rest of the sections will be based on. Electromagnetic and optical effects that will be referred in the remaining chapters are described, either as being necessary to explain experiments or, in other cases, to note the non-appearance of these effects for the present case and justify the simplification of the problem that is made in many cases. This section mainly describes the electrophoretic and dielectrophoretic trapping, the photovoltaic effect and the properties of lithium niobate as the material to use in experiments and simulations. Likewise, as required in this kind of researches, the state of the art have been analyzed, reviewing what other scientists working in this field have made and written so that serve as a foundation for research. With chapter 3 the first section finalizes describing the experimental techniques that are currently being used in laboratories for trapping particles by the photovoltaic effect, because according to the trapping technique in use we will get slightly different results. The section I I , which is dedicated to the trapping modeling, begins with Chapter 4 where the internal electric field of the sample is modeled, to continue modeling the electric field, potential and forces that are external to the sample. Chapter 5 presents a simple model to understand the problem addressed by us, which is called Steady-State Charge Separation Model. This model gives very good results despite its simplicity. In chapter 6 the equations involved in the internal physics of the sample are discretized by the finite difference method, which is developed in the Spatial Charge Distribution Model. To end this section, chapter 8 is dedicated to program the models presented in the previous chapters in order to provide us with tools to perform simulations in a fast way. In the last section, III, the results of numerical simulations with the developed tools are presented and compared with the experimental results. We can easily compare outcomes in the two configurations of the crystal, in section X and section Z. The final chapter collects the conclusions, summarizing the results that were obtained in previous sections and giving an overview of the research.

Low work-function thermionic emission and orbital-motion-limited ion collection at bare-tether cathodic contact

With a thin coating of low-work-function material, thermionic emission in the cathodic segment of bare tethers might be much greater than orbital-motion-limited (OML) ion collection current. The space charge of the emitted electrons decreases the electric field that accelerates them outwards, and could even reverse it for high enough emission, producing a potential hollow. In this work, at the conditions of high bias and relatively low emission that make the potential monotonic, an asymptotic analysis is carried out, extending the OML ion-collection analysis to investigate the probe response due to electrons emitted by the negatively biased cylindrical probe. At given emission, the space charge effect from emitted electrons increases with decreasing magnitude of negative probe bias. Although emitted electrons present negligible space charge far away from the probe, their effect cannot be neglected in the global analysis for the sheath structure and two thin layers in between sheath and the quasineutral region. The space-charge-limited condition is located. It is found that thermionic emission increases the range of probe radius for OML validity and is greatly more effective than ion collection for cathodic contact of tethers.

Propellantless deorbiting of space debris by bare electrodynamic tethers : final report

A Space tether is a thin, multi-kilometers long conductive wire, joining a satellite and some opposite end mass, and keeping vertical in orbit by the gravity-gradient. The ambient plasma, being highly conductive, is equipotential in its own co-moving frame. In the tether frame, in relative motion however, there is in the plasma a motional electric field of order of 100 V/km, product of (near) orbital velocity and geomagnetic field. The electromotive force established over the tether length allows plasma contactor devices to collect electrons at one polarized-positive (anodic) end and eject electrons at the opposite end, setting up a current along a standard, fully insulated tether. The Lorentz force exerted on the current by the geomagnetic field itself is always drag; this relies on just thermodynamics, like air drag. The bare tether concept, introduced in 1992 at the Universidad Politécnica de Madrid (UPM), takes away the insulation and has electrons collected over the tether segment coming out polarized positive; the concept rests on 2D (Langmuir probe) current-collection in plasmas being greatly more efficient than 3D collection. A Plasma Contactor ejects electrons at the cathodic end. A bare tether with a thin-tape cross section has much greater perimeter and de-orbits much faster than a (corresponding) round bare tether of equal length and mass. Further, tethers being long and thin, they are prone to cuts by abundant small space debris, but BETs has shown that the tape has a probability of being cut per unit time smaller by more than one order of magnitude than the corresponding round tether (debris comparable to its width are much less abundant than debris comparable to the radius of the corresponding round tether). Also, the tape collects much more current, and de-orbits much faster, than a corresponding multi-line “tape” made of thin round wires cross-connected to survive debris cuts. Tethers use a dissipative mechanism quite different from air drag and can de-orbit in just a few months; also, tape tethers are much lighter than round tethers of equal length and perimeter, which can capture equal current. The 3 disparate tape dimensions allow easily scalable design. Switching the cathodic Contactor off-on allows maneuvering to avoid catastrophic collisions with big tracked debris. Lorentz braking is as reliable as air drag. Tethers are still reasonably effective at high inclinations, where the motional field is small, because the geomagnetic field is not just a dipole along the Earth polar axis. BETs is the EC FP7/Space Project 262972, financed in about 1.8 million euros, from 1 November 2010 to 31 January 2014, and carrying out RTD work on de-orbiting space debris. Coordinated by UPM, it has partners Università di Padova, ONERA-Toulouse, Colorado State University, SME Emxys, DLR–Bremen, and Fundación Tecnalia. BETs work involves 1) Designing, building, and ground-testing basic hardware subsystems Cathodic Plasma Contactor, Tether Deployment Mechanism, Power Control Module, and Tape with crosswise and lengthwise structure. 2) Testing current collection and verifying tether dynamical stability. 3) Preliminary design of tape dimensions for a generic mission, conducive to low system-to-satellite mass ratio and probability of cut by small debris, and ohmic-effects regime of tether current for fast de-orbiting. Reaching TRL 4-5, BETs appears ready for in-orbit demostration.

Submicrosecond pacemaker precision is behaviorally modulated: The gymnotiform electromotor pathway

What are the limits and modulators of neural precision? We address this question in the most regular biological oscillator known, the electric organ command nucleus in the brainstem of wave-type gymnotiform fish. These fish produce an oscillating electric field, the electric organ discharge (EOD), used in electrolocation and communication. We show here that the EOD precision, measured by the coefficient of variation (CV = SD/mean period) is as low as 2 × 10−4 in five species representing three families that range widely in species and individual mean EOD frequencies (70–1,250 Hz). Intracellular recording in the pacemaker nucleus (Pn), which commands the EOD cycle by cycle, revealed that individual Pn neurons of the same species also display an extremely low CV (CV = 6 × 10−4, 0.8 μs SD). Although the EOD CV can remain at its minimum for hours, it varies with novel environmental conditions, during communication, and spontaneously. Spontaneous changes occur as abrupt steps (250 ms), oscillations (3–5 Hz), or slow ramps (10–30 s). Several findings suggest that these changes are under active control and depend on behavioral state: mean EOD frequency and CV can change independently; CV often decreases in response to behavioral stimuli; and lesions of one of the two inputs to the Pn had more influence on CV than lesions of the other input.

Capacitance cytometry: Measuring biological cells one by one

Measuring the DNA content of eukaryotic cells is a fundamental task in biology and medicine. We have observed a linear relationship between the DNA content of eukaryotic cells and the change in capacitance that is evoked by the passage of individual cells across a 1-kHz electric field. This relationship is species-independent; consequently, we have developed a microfluidic technique—“capacitance cytometry”—that can be used to quantify the DNA content of single eukaryotic cells and to analyze the cell-cycle kinetics of populations of cells. Comparisons with standard flow cytometry demonstrate the sensitivity of this new technique.

Altering the biochemical state of individual cultured cells and organelles with ultramicroelectrodes

We describe an efficient technique for the selective chemical and biological manipulation of the contents of individual cells. This technique is based on the electric-field-induced permeabilization (electroporation) in biological membranes using a low-voltage pulse generator and microelectrodes. A spatially highly focused electric field allows introduction of polar cell-impermeant solutes such as fluorescent dyes, fluorogenic reagents, and DNA into single cells. The high spatial resolution of the technique allows for design of, for example, cellular network constructions in which cells in close contact with each other can be made to possess different biochemical, biophysical, and morphological properties. Fluorescein, and fluo-3 (a calcium-sensitive fluorophore), are electroporated into the soma of cultured single progenitor cells derived from adult rat hippocampus. Fluo-3 also is introduced into individual submicrometer diameter processes of thapsigargin-treated progenitor cells, and a plasmid vector cDNA construct (pRAY 1), expressing the green fluorescent protein, is electroporated into cultured single COS 7 cells. At high electric field strengths, observations of dye-transfer into organelles are proposed.

A simple light-driven transmembrane proton pump.

Light-induced lipophilic porphyrin/aqueous acceptor charge separation across a single lipid-water interface can pump protons across the lipid bilayer when the hydrophobic weak acids, carbonylcyanide m-chlorophenylhydrazone and its p-trifluoromethoxyphenyl analogue, are present. These compounds act as proton carriers across lipid bilayers. In their symmetric presence across the bilayer, the positive currents and voltages produced by the photogeneration of porphyrin cations are replaced by larger negative currents and voltages. The maximum negative current and voltage occur at the pH of maximum dark conductance. The reversed larger current and voltage show a positive ionic charge transport in the same direction as the electron transfer. This transport can form an ion concentration gradient. The movement of protons is verified by an unusual D2O isotope effect that increases the negative ionic current by 2- to 3-fold. These effects suggest that an interfacial pK shift of the weak acid caused by the local electric field of photoformed porphyrin cations/acceptor anions functions as the driving force. The estimated pumping efficiency is 10-30%. Time-resolved results show that proton pumping across the bilayer occurs on the millisecond time scale, similar to that of biological pumps. This light-driven proteinless pump offers a simple model for a prebiological energy transducer.

Intracortical and corticothalamic coherency of fast spontaneous oscillations.

We report that fast (mainly 30- to 40-Hz) coherent electric field oscillations appear spontaneously during brain activation, as expressed by electroencephalogram (EEG) rhythms, and they outlast the stimulation of mesopontine cholinergic nuclei in acutely prepared cats. The fast oscillations also appear during the sleep-like EEG patterns of ketamine/xylazine anesthesia, but they are selectively suppressed during the prolonged phase of the slow (<1-Hz) sleep oscillation that is associated with hyperpolarization of cortical neurons. The fast (30- to 40-Hz) rhythms are synchronized intracortically within vertical columns, among closely located cortical foci, and through reciprocal corticothalamic networks. The fast oscillations do not reverse throughout the depth of the cortex. This aspect stands in contrast with the conventional depth profile of evoked potentials and slow sleep oscillations that display opposite polarity at the surface and midlayers. Current-source-density analyses reveal that the fast oscillations are associated with alternating microsinks and microsources across the cortex, while the evoked potentials and the slow oscillation display a massive current sink in midlayers, confined by two sources in superficial and deep layers. The synchronization of fast rhythms and their high amplitudes indicate that the term "EEG desynchronization," used to designate brain-aroused states, is incorrect and should be replaced with the original term, "EEG activation" [Moruzzi, G. & Magoun, H.W. (1949) Electroencephalogr. Clin. Neurophysiol. 1, 455-473].

Mutation of conserved negatively charged residues in the S2 and S3 transmembrane segments of a mammalian K+ channel selectively modulates channel gating.

Voltage-gated channel proteins sense a change in the transmembrane electric field and respond with a conformational change that allows ions to diffuse across the pore-forming structure. Site-specific mutagenesis combined with electrophysiological analysis of expressed mutants in amphibian oocytes has previously established the S4 transmembrane segment as an element of the voltage sensor. Here, we show that mutations of conserved negatively charged residues in S2 and S3 of a brain K+ channel, thought of as countercharges for the positively charged residues in S4, selectively modulate channel gating without modifying the permeation properties. Mutations of Glu235 in S2 that neutralize or reverse charge increase the probability of channel opening and the apparent gating valence. In contrast, replacements of Glu272 by Arg or Thr268 by Asp in S3 decrease the open probability and the apparent gating valence. Residue Glu225 in S2 tolerated replacement only by acidic residues, whereas Asp258 in S3 was intolerant to any attempted change. These results imply that S2 and S3 are unlikely to be involved in channel lining, yet, together with S4, may be additional components of the voltage-sensing structure.

Fano-Rashba effect in quantum dots

We consider the electronic transport through a Rashba quantum dot coupled to ferromagnetic leads. We show that the interference of localized electron states with resonant electron states leads to the appearance of the Fano-Rashba effect. This effect occurs due to the interference of bound levels of spin-polarized electrons with the continuum of electronic states with an opposite spin polarization. We investigate this Fano-Rashba effect as a function of the applied magnetic field and Rashba spin-orbit coupling.