Chirp-enhanced direct modulation of a monolithic sub-Terahertz dual laser transmitter

A technique enabling 10 Gbps data to be directly modulated onto a monolithic sub-THz dual laser transmitter is proposed. As a result of the laser chirp, the logical zeros of the resultant sub-THz signal have a different peak frequency from that of the logical ones. The signal extinction ratio is therefore enhanced by suppressing the logical zeros with a filter stage at the receiver. With the aid of the chirp-enhanced filtering, an improved extinction ratio can be achieved at moderate modulation current. Hence, 10 GHz modulation bandwidth of the transmitter is predicted without the need for external modulators. In this paper, we demonstrate the operational principle by generating an error-free (bit error rate less than 10-9) 100 Mbps Manchester encoded signal with a centre frequency of 12 GHz within the bandwidth of an envelope detector, whilst direct modulation of a 100 GHz signal at data rates of up to 10 Gbps is simulated by using a transmission line model. This work could be a key technique for enabling monolithic sub-THz transmitters to be readily used in high speed wireless links. © 2013 IEEE.

Sub-kHz RF electrical linewidth from a 10GHz passively mode-locked quantum-dot laser diode

A packaged 10GHz monolithic two-section quantum-dot mode-locked laser is presented, with record narrow 500Hz RF electrical linewidth for passive mode-locking. Single sideband noise spectra show 147fs integrated timing jitter over the 4MHz-80MHz frequency range. © 2009 Optical Society of America.

Theoretical study of line narrowing in a sub-terahertz monolithic dual laser source with an integrated reflector

A monolithic design is proposed for low-noise sub-THz signal generation by integrating a reflector onto a dual laser source. The reflectivity and the position of such a reflector can be adjusted to obtain constructive feedback from the reflector to both lasers, thus causing a Vernier feedback effect. As a result, 10-fold line narrowing, the narrowing being limited by the resolution of the simulation, is predicted using a transmission line model. Finally, a simple control scheme using an electrical feedback loop to adjust laser biases is proposed to maintain the line narrowing performance. This line narrowing technique, comprising a passive integrated reflector, could allow the development of a low-cost, compact and energy-efficient solution for high-purity sub-THz signal generation. © The Institution of Engineering and Technology 2014.

Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band

This paper demonstrates on chip sub bandgap detection of light at 1550 nm wavelength using the configuration of interleaved PN junctions along a silicon waveguide. The device operates under reverse bias in a nearly fully depleted mode, thus minimizing the free carrier plasma losses and significantly increases the detection volume at the same time. Furthermore, substantial enhancement in responsivity is observed by the transition from reverse bias to avalanche breakdown regime. The observed high responsivity of up to 7.2 mA/W at 3 V is attributed to defect assisted photogeneration, where the defects are related to the surface and the bulk of the waveguide. © 2014 AIP Publishing LLC.

Non-compressive wideband spectrum sensing with sub-Nyquist sampling rates

In this paper, we propose a low complexity and reliable wideband spectrum sensing technique that operates at sub-Nyquist sampling rates. Unlike the majority of other sub-Nyquist spectrum sensing algorithms that rely on the Compressive Sensing (CS) methodology, the introduced method does not entail solving an optimisation problem. It is characterised by simplicity and low computational complexity without compromising the system performance and yet delivers substantial reductions on the operational sampling rates. The reliability guidelines of the devised non-compressive sensing approach are provided and simulations are presented to illustrate its superior performance. © 2013 IEEE.

Dynamics of microcystins-LR and -RR in the phytoplanktivorous silver carp in a sub-chronic toxicity experiment

A sub-chronic toxicity experiment was conducted to examine tissue distribution and depuration of two microcystins (microcystin-LR and microcystin -RR) in the phytoplanktivorous filter-feeding silver carp during a course of 80 days. Two large tanks (A, B) were used, and in Tank A, the fish were fed naturally with fresh Microcystis viridis cells (collected from a eutrophic pond) throughout the experiment, while in Tank B, the food of the fish were M. viridis cells for the first 40 days and then changed to artificial carp feed. High Performance Liquid Chromatography (HPLC) was used to measure MC-LR and MC-RR in the M. viridis cells, the seston, and the intestine, blood, liver and muscle tissue of silver carp at an interval of 20 days. MC-RR and MC-LR in the collected Microcystis cells varied between 268-580 and 110-292 mug g(-1) DW, respectively. In Tank A, MC-RR and MC-LR varied between 41.5-99.5 and 6.9-15.8 mug g(-1) DW in the seston, respectively. The maximum MC-RR in the blood, liver and muscle of the fish was 49.7, 17.8 and 1.77 mug g(-1) DW, respectively. No MC-LR was detectable in the muscle and blood samples of the silver carp in spite of the abundant presence of this toxin in the intestines (for the liver, there was only one case when a relatively minor quantity was detected). These findings contrast with previous experimental results on rainbow trout. Perhaps silver carp has a mechanism to degrade MC-LR actively and to inhibit MC-LR transportation across the intestines. The depuration of MC-RR concentrations occurred slowly than uptakes in blood, liver and muscle, and the depuration rate was in the order of blood > liver > muscle. The grazing ability of silver carp on toxic cyanobacteria suggests an applicability of using phytoplanktivorous fish to counteract cyanotoxin contamination in eutrophic waters. (C) 2003 Elsevier Ltd. All rights reserved.

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20-mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of < 400 ps is finally realized under an electrical pre-emphasized driving signal. This compact and fast-response micro-ring switch, which can be fabricated by complementary metal oxide semiconductor (CMOS) compatible technologies, have enormous potential in optical interconnects of multicore networks-on-chip.

Sub-nanosecond optical switch based on silicon racetrack resonator

We experimentally demonstrate a small-size and high-speed silicon optical switch based on the free carrier plasma dispersion in silicon. Using an embedded racetrack resonator with a quality factor of 7400, the optical switch shows an extinction ratio exceeding 13 dB with a footprint of only 2.2 x 10(-3) mm(2). Moreover, a novel pre-emphasis technique is introduced to improve the optical response performance and the rise and the fall times are reduced down to 0.24 ns and 0.42 ns respectively, which are 25% and 44% lower than those without the pre-emphasis.

Numerical study of sub-wavelength plasmonic waveguide

The authors present an analysis of a plasmonic waveguide, simulated using a two-dimensional finite-difference time-domain technique. With the surface structures located on the surface of the metal, the device is able to confine and guide light waves in a sub-wavelength scale. And two waveguides can be placed within 150 nm (similar to 6% of the incident wavelength) that will helpful for the optoelectronic integration. Within the 20 mu m simulation region, it is found that the intensity of the guided light at the interface is roughly two to four times the peak intensity of the incident light, and the propagation length can reach approximately 40 Pm at the wavelength of 2.44 mu m. (c) 2007 Elsevier B.V. All rights reserved.

Time-resolved photoluminescence of sub-monolayer InGaAs/GaAs quantum-dot-quantum-well heterostructures

Time-resolved photoluminescence (PL) of sub-monolayer (SML) InGaAs/GaAs quantum-dot-quantum-well heterostructures was measured at 5 K for the first time. The radiative lifetime of SML quantum dots (QDs) increases from 500 ps to 800 ps with the increase of the size of QDs, which is related to the small confinement energy of the excitons inside SML QDs and the exciton transfer from smaller QDs to larger ones through tunneling. The rise time of quantum-dot state PL signal strongly depends on the excitation power density. At low excitation power density, the rise time is about 35 ps, the mechanism of carrier capture is dominated by the emission of longitudinal-optical phonons. At high excitation power density, the rise time decreases as the excitation density increases, and Auger process plays an important role in the carrier capture. These results are very useful for understanding the working properties of sub-monolayer quantum-dot devices.

Detect the sub-wavelength data by applying a very-small-aperture laser

We present a theoretical and experimental research about applying a very-small-aperture laser (VSAL) to detect sub-wavelength data. Near-field distribution of a VSAL, which is essential for the application of such near-field devices, will be affected by the sample or fiber posited in the near-field region of the aperture. When the device is applied to detect the sub-wavelength data, the real resolution depends on the near-field spot size, the divergent angle of the beam and the distance from the aperture to the sample. Experimental results, including the near-field detection of the spot and detection of the sub-wavelength data by using the VSAL, are presented in this paper. We realize the two dimensional scanning about the sub-wavelength data (with the width 600 nm) by employing a VSAL with a 300 nm x 300 nm aperture.

Neuro-Stimulus Chip with Photodiodes Array for Sub-retinal Implants

A prototype neuro-stimulus chip for sub-retinal implants in blind patients affected by Age-related Macular Degeneration (AMD) or Retinitis Pigmentosa (RP) is presented in this paper. This retinal prosthetic chip was designed to replace the degenerated photoreceptor cells, and in order to stimulate directly the remaining healthy layers of retinal neurons. The current stimulus circuits are monolithic integrated with photodiodes (PD) array, which can convert the illumination on the eyes into bi-phasic electrical pulses. In addition, a novel charge cancellation circuit is used to discharge the electrodes for medical safty. The prototype chip is designed and fabricated in HJTC 0.18 mu m N-well CMOS 1P6M Mix-signal process, with a +/- 2.5 V dual voltage power supply.

An algorithm of analysis tools on points distribution in high dimension space: The distance of a point and an infinite sub-space

This paper discusses the algorithm on the distance from a point and an infinite sub-space in high dimensional space With the development of Information Geometry([1]), the analysis tools of points distribution in high dimension space, as a measure of calculability, draw more attention of experts of pattern recognition. By the assistance of these tools, Geometrical properties of sets of samples in high-dimensional structures are studied, under guidance of the established properties and theorems in high-dimensional geometry.