Complex quantum ring structures formed by droplet epitaxy

Well-defined complex quantum ring structures formed by droplet epitaxy are demonstrated. By varying the temperature of the crystallizing Ga droplets and changing the As flux, GaAs/AlGaAs quantum single rings and concentric quantum double rings are fabricated, and double-ring complexes are observed. The growth mechanism of these quantum ring complexes is addressed. (c) 2006 American Institute of Physics.

Resonant tunneling theory of planar quantum dot structures

The ballistic transport in the semiconductor, planar, circular quantum dot structures is studied theoretically. The transmission probabilities show apparent resonant tunneling peaks, which correspond to energies of bound states in the dot. By use of structures with different angles between the inject and exit channels, the resonant peaks can be identified very effectively. The perpendicular magnetic field has obvious effect on the energies of bound states in the quantum dot, and thus the resonant peaks. The treatment of the boundary conditions simplifies the problem to the solution of a set of linear algebraic equations. The theoretical results in this paper can be used to design planar resonant tunneling devices, whose resonant peaks are adjustable by the angle between the inject and exit channels and the applied magnetic field. The resonant tunneling in the circular dot structures can also be used to study the bound states in the absence and presence of magnetic field.

Valence band structures of the InAs/GaAs quantum ring

In the framework of effective-mass envelope function theory, the valence energy subbands and optical transitions of the InAs/GaAs quantum ring are calculated by using a four-band valence band model. Our model can be used to calculate the hole states of quantum wells, quantum wires, and quantum dots. The effect of finite offset and valence band mixing are taken into account. The energy levels of the hole are calculated in the different shapes of rings. Our calculations show that the effect of the difference between effective masses of holes in different materials on the valence subband structures is significant. Our theoretical results are consistent with the conclusion of the recent experimental measurements and should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 American Institute of Physics.

Electronic states of InAs/GaAs quantum ring

In the framework of effective mass envelope function theory, the electronic states of the InAs/GaAs quantum ring are studied. Our model can be used to calculate the electronic states of quantum wells, quantum wires, and quantum dots. In calculations, the effects due to the different effective masses of electrons in rings and out rings are included. The energy levels of the electron are calculated in the different shapes of rings. The results indicate that the inner radius of rings sensitively changes the electronic states. The energy levels of the electron are not sensitively dependent on the outer radius for large rings. If decreasing the inner and outer radii simultaneously, one may increase the energy spacing between energy levels and keep the ground state energy level unchanged. If changing one of two radii (inner or outer radius), the ground state energy level and the energy spacing will change simultaneously. These results are useful for designing and fabricating the double colors detector by intraband and interband translations. The single electron states are useful for studying the electron correlations and the effects of magnetic fields in quantum rings. Our calculated results are consistent with the recent experimental data of nanoscopic semiconductor rings. (C) 2001 American Institute of Physics.

Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy

Large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for X-ray spectroscopy. On the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. Two designs have been used for the P-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. Only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. With graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial FWHM of 1.3 keV, without optimization of all parameters, has been obtained for 5.9 keV Fe-55 X-ray at RT using a uniform backside detector.

Energy spectrum and persistent currents in finite-width mesoscopic ring with radial potential barrier threading a magnetic flux through its hole

The energy spectrum and the persistent currents are calculated for a finite-width mesoscopic annulus with radial potential barrier, threading a magnetic flux through the hole of the ring. Owing to the presence of tunneling barrier, the coupling effect leads to the splitting of each radial energy subband of individual concentrical rings into two one. Thus, total currents and currents carried by single high-lying eigenstate as a function of magnetic flux exhibit complicated patterns. However, periodicity and antisymmetry of current curves in the flux still preserve.

Morphology and wetting layer properties of InAs/GaAs nanostructures

In this work, we present the growth of InAs rings by droplet epitaxy. A complete process from the rings formation to their density saturation has been demonstrated: A morphological evolution with the varying of the indium deposition amount has been, clearly observed. Our results indicate that there, is a critical deposition amount (similar to 1.1 ML) for the indium to form InAs dots before droplets form; there is also a critical deposition amount (similar to 1.4 ML) to form InAs ring, but it is caused by the formation of droplets as the deposition amount increases. The density of the rings saturates when the deposition amount exceeds similar to 3.3 ML; because the adsorbed indium atoms block sites for further adsorption and the following supplied In only contributes to the size increase of In droplets. Still, as the In deposition amount increases, we can find coupled quantum rings. Moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the In amount. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Novel compact SOI-based reconfigurable optical add/drop multiplexer using microring resonators - art. no. 60190L

Novel compact design for 4-channel SOI-based reconfigurable optical add/drop multiplexer using microring resonators is presented and analyzed. Microring resonators have two important attributes as a key new technology for future optical communications, namely functionality and compactness. Functionality refers to the fact that a wide range of desirable filter characteristics can be synthesized by coupling multiple rings. Compactness refers the fact that ring resonators with radii about 30 mu m can lead to large scale integration of devices with densities on the order of 10(4) similar to 10(5) devices per square centimeter. A 4-channel reconfigurable optical add/drop multiplexer comprises a grid-like array of ridge waveguides which perpendicularly cross through each other. SOI-based resonators consisted of multiple rings at each of the cross-grid nodes serve as the wavelength selective switch, and they can switch an optical signal between two ports by means of tuning refractive index of one of the rings. The thermo-optic coefficient of silicon is 1.86x 10(-4) /K. Thus a temperature rise of 27K will increase the refractive index by 5 x 10(-3), which is enough to cause the switching of our designed microring resonators. The thermo-optic effect is used to suppress the resonator power transfer, rather than to promote loss. Thus, the input signal only suffers small attenuation and simultaneously low crosstalk can be achieved by using multiple rings.

黄土丘陵区不同土地利用方式下土壤水分入渗的对比试验

为更好地掌握黄土丘陵区不同土地利用方式下的土壤水分入渗性能,采用双环法和人工降雨法,分别对陕西省延安市燕沟流域林地、草地、农地3种土地利用方式的土壤水分入渗过程进行了对比试验。结果表明:双环法能较好的反映水向土中的入渗过程;而人工降雨法可以较为真实地反映天然降雨过程中雨水向土中的入渗过程, 两者有很大的不同,主要表现在土壤水分的入渗速率变化过程方面。前者测定的土壤水分入渗速率主要受制于土壤的物理性状,而后者:不但与土壤物理性状有关,还与降雨强度有较密切的关系。在人工模拟短历时暴雨条件下, 对于林地和荒坡草地,土壤水分入渗速率有随雨强增大而增大的趋势,而对于裸耕农地,随着雨强的增大,土壤水分入渗速率有降低的趋势。

QUANTUM WAVE-GUIDE THEORY FOR MESOSCOPIC STRUCTURES

A one-dimensional quantum waveguide theory for mesoscopic structures is proposed, and the boundary conditions of the wave functions at an intersection are given. The Aharonov-Bohm effect is quantitatively discussed with use of this theory, and the reflection, transmission amplitudes, etc., are given as functions of the magnetic flux, the arm lengths, and the wave vector. It is found that the oscillating current consists of a significant component of the second harmonic. This theory is also applied to investigate quantum-interference devices. The results on the Aharonov-Bohm effect and the quantum-interference devices are found to be in agreement with previous theoretical results.

Quantum interference effect in GaAs/AlGaAs double quantum wells

Quantum interference properties of GaAs/AlGaAs symmetric double quantum wells were investigated in a magnetic field parallel to heterointerfaces at 1.9 K. For two types of samples used in our experiments, two GaAs quantum wells with the same width of 60 Angstrom are separated by an AlGaAs barrier layer of 120 Angstrom and 20 degrees thick, respectively. The channels with the length of 2 mu m are defined by alloyed ohmic contacts. The conductance oscillation as a function of the magnetic flux Phi(= B/s) was observed and oscillation period is approximately equal to h/e. The results are in agreement with the theoretical expectation of the Aharonov-Bohm effect. Conductance oscillations are apparent slightly in the samples with a thinner AlGaAs barrier.

Electronic structure and optical property of semiconductor nanocrystallites

Semiconductor nanostructures show many special physical properties associated with quantum confinement effects, and have many applications in the opto-electronic and microelectronic fields. However, it is difficult to calculate their electronic states by the ordinary plane wave or linear combination of atomic orbital methods. In this paper, we review some of our works in this field, including semiconductor clusters, self-assembled quantum dots, and diluted magnetic semiconductor quantum dots. In semiconductor clusters we introduce energy bands and effective-mass Hamiltonian of wurtzite structure semiconductors, electronic structures and optical properties of spherical clusters, ellipsoidal clusters, and nanowires. In self-assembled quantum dots we introduce electronic structures and transport properties of quantum rings and quantum dots, and resonant tunneling of 3-dimensional quantum dots. In diluted magnetic semiconductor quantum dots we introduce magnetic-optical properties, and magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot. (C) 2004 Elsevier B.V. All rights reserved.

Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy

Large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for X-ray spectroscopy. On the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. Two designs have been used for the P-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. Only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. With graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial FWHM of 1.3 keV, without optimization of all parameters, has been obtained for 5.9 keV Fe-55 X-ray at RT using a uniform backside detector.

Design of Topas photonic bandgap fiber with high birefringence and low confinement loss

A highly birefringent hollow-core photonic bandgap fiber based on Topas cyclic olefin copolymer is designed. The rhombic hollow-core with rounded corners is formed by omitting four central air holes of the cladding structure. The guided modes, birefringence and confinement loss of the fiber are investigated by using the full-vector finite element method. A high phase birefringence of the order of 10(-3), a group birefringence of the order of 10(-2) and confinement loss less than 0.1 dB/km are obtained at the central wavelength (1.55 mu m) range of the bandgap for fiber with seven rings of air holes in the cladding region. (C) 2010 Elsevier B.V. All rights reserved.

新型非肽类血管紧张素II受体拮抗剂设计合成及其生物活性研究

Ang II受体拮抗剂是作用于肾素-血管紧张素系统(RAS)的抗高血压药，因其抗高血压作用与较老的抗高血压药物作用相同，且更具有选择性，不良反应状况与安慰剂相似,而在高血压治疗中逐渐引起研究者重视，并成为目前增长最快的抗高血压药物。在许多AngII受体拮抗剂中四氮唑结构已成为固定基团，但四氮唑有许多合成及代谢弊端。因此，寻找其他合适的杂环酸性基团来替代四氮唑，在保持较高口服活性的同时克服相应缺陷，具有极其重要的意义。 本项目以四氮唑沙坦类药物为先导化合物，运用生物电子等排原理及拼合原理，根据计算机分子模拟研究结果，对其进行结构修饰和改造，首次将咪唑、氯代咪唑、三氮唑及咪唑啉替代四氮唑，并结合具有较高AngII受体拮抗活性的联苯并咪唑衍生物，设计并合成一系列含咪唑，咪唑啉，氯代咪唑及三氮唑衍生物的Ang II受体拮抗剂。 研究这一系列新型AngII受体拮抗剂的体内、体外抗高血压活性时，发现咪唑啉衍生物展示了与对照药物几乎相当的活性，而咪唑、氯代咪唑和三氮唑衍生物分别表现了较弱或者没有活性，这些研究对今后更进一步设计合成新的Ang II受体拮抗剂具有重要的指导意义，同时也为筛选抗高血压药物奠定良好的基础。 The angiotensin II receptor antagonists act on renin-angiotensin system (RAS), which are as effective as other types of anti-hypertensive drugs. Because even the more specific and comparable to placebo in terms of side effects, Ang II receptor antagonists cause a high attention and become the fastest growing anti-hypertension drugs. Most of such compounds share the biphenyltetrazole unit with the lead Losartan. However, there are many defects in tetrazole synthesis and vivo metabolism. Therefore, we felt quite encouraged to find some proper acidic heterocyclic groups which maintain the same oral bioavailability to replace the tetrazole. In the present paper, we applied the bioisostere and combination principle, in accordance with the results of computer modeling of molecular, to modify the lead structural of terazole in sartan compounds reported. We turned our attention to replace the tetrazole ring with imidazole rings, chloro-imidazole, imidazoline, traizole ring and combinated them with benzimidazoles derivatives which have antagonistic activity for angiotensin II to design and synthesize a series of Ang II receptor antagonists contaning imidazole ring, chloro-imidazole, imidazoline or traizole ring. In addition, activity tests in vivo and in vivo had shown that imidazoline derivatives display almost equivalent activity with the reference drug, but imidazole derivatives, chloro-imidazole, triazole derivatives were weak or non-performance of the hypotensive activity. We believe that the imidazoline derivative type Ang II receptor antagonists can build a foundation for the development of a novel series of anti-hypertensive drugs.