964 resultados para Rockwell Hardness Tester
Resumo:
An in situ energy dispersive x-ray diffraction study on nanocrystalline ZnS was carried out under high pressure up to 30.8 GPa by using a diamond anvil cell. The phase transition from the wurtzite to the zinc-blende structure occurred at 11.5 GPa, and another obvious transition to a new phase with rock-salt structure also appeared at 16.0 GPa-which was higher than the value for the bulk material. The bulk modulus and the pressure derivative of nanocrystalline ZnS were derived by fitting the Birch-Murnaghan equation. The resulting modulus was higher than that of the corresponding bulk material, indicating that the nanomaterial has higher hardness than the bulk material.
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A parallel optical communication subsystem based on a 12 channels parallel optical transmitter module and a 12 channels parallel optical receiver module can be used as a 10Gbps STM-64 or an OC-192 optical transponder. The bit error rate of this parallel optical communication subsystem is about 0 under the test by SDH optical transport tester during three hours and eighteen minutes.
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测试软件(Tester)的开发不同于一般的软件开发,在测试软件开发的过程中,涉及到测试软件本身和测试用例(Testcase)两者之间的划分和协作.目前的测试用例脚本大都是一些自定义的格式文本,通过测试软件的分析来执行测试逻辑,不仅需要编写大量复杂的脚本解析程序,而且难以阅读和维护.为了解决这个问题,提出了一种基于ActiveX Scripting技术的测试软件开发方法,该方法可以将测试逻辑按照需求分配到测试软件和测试用例,提供了一种统一的编程接口,易于学习和使用.
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系统分析农田抗旱管理与相应措施对黄土高原半干旱区社会和经济的协调健康发展以及粮食安全具有重要意义。黄土高原半干旱区干旱发生的特点决定了农田抗旱管理的复杂性和艰巨性。论文阐述了农田抗旱管理中防、抗与避三种措施的主要内容,并就农田抗旱管理系统进行了介绍。认为通过建立完善的农业技术推广服务体系和针对地区特点的抗旱管理措施,是半干旱区农业可持续发展一项重要而积极的对策,不仅需要从资金和政策上给予扶持和倾斜,更需要在管理机制上予以重视。
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通过冬小麦田间试验,研究了免耕、深松、翻耕三种不同耕作措施对土壤物理特性的影响。结果表明:冬小麦收获时,免耕与其它处理相比,增大了土壤容重、土壤硬度,其土壤干筛法>0.25 mm团聚体含量比深松和翻耕每层平均增加3%和5%,但较冬小麦耕作处理前每层平均下降5%;免耕条件下,湿筛法>0.25 mm团聚体含量比深松和翻耕每层平均增加11%和32%,较冬小麦耕作处理前每层平均下降42%;免耕可增加土壤蓄水量,收获期土壤蓄水量为373.1 mm,较深松和翻耕提高17%和8%;随着降水量的增加,冬小麦收获期水分入渗速率逐渐减少;且不同耕作方式水分入渗速率为免耕>深松>翻耕。
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A process for fabricating n channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p(+)n junction was obtained by diffusion, and the conductive channel was gotten by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co-50 gamma ray irradiation experimental we found that the devices had a good total dose radiation-hardness. When the tot;ll dose was 5Mrad(Si), their threshold voltages shift was less than 0.1V. The variation of transconductance and the channel leakage current were also little.
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High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20nm GaAs nucleation layer grown by ALE.
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Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.
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This paper focuses on improving the thermal fatigue resistance on the surface of vermicular cast iron coupling with inserted H13 steel blocks that had different cross sections, by cast-in processing. The microstructure of bionic units was examined by scanning electron microscope. Micro-hardness and thermal fatigue resistance of bionic samples with varied cross sections and spacings were investigated, respectively. Results show that a marked metallurgical bonding zone was produced at interface between the inserted H13 steel block and the parent material - a unique feature of the bionic structure in the vermicular cast iron samples. The micro-hardness of the bionic samples has been significantly improved. Thermal resistance of the samples with the circular cross section was the highest and the bionics sample with spacing of 2 mm spacing had a much longer thermal fatigue life, thus resulting in the improvement for the thermal fatigue life of the bionic samples, due to the efficient preclusion for the generation and propagation of crack at the interface of H13 block and the matrix. Crown Copyright (c) 2010 Published by Elsevier Ltd. All rights reserved.
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For the cube-corner indenter, an approximate linear relationship between the ratio of hardness (H) to reduced modulus (E-r) and the ratio of unloading work (W-u) to total loading work (W-t) is confirmed by finite-element calculations and by experiments. Based on this relationship a convenient method to determine the fracture toughness (K-IC) of brittle materials, especially for those at small scale, using cube-corner indentations is proposed. Finally, the method is calibrated by indentation experiments on a set of brittle materials. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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Structural relaxation by isothermal annealing below the glass transition temperature is conducted on a Zr64.13Cu15.75Ni10.12Al10 bulk metallic glass. The effect of structural relaxation on thermal and mechanical properties was investigated by differential scanning calorimetry and instrumented nanoindentation. The recovery of the enthalpy in the DSC curves indicates that thermally unstable defects were annihilated through structural relaxation. During nanoindentation, the structural relaxation did not have a significant influence on the serrated plastic flow behavior. However, Structural relaxation shows an obvious effect in increasing both the hardness and elastic modulus, which is attributed to the annihilation of thermally unstable defects that resulted from the relaxation.
Resumo:
Structural relaxation by isothermal annealing below the glass transition temperature is conducted on a Zr64.13Cu15.75Ni10.12Al10 bulk metallic glass. The effect of structural relaxation on thermal and mechanical properties was investigated by differential scanning calorimetry and instrumented nanoindentation. The recovery of the enthalpy in the DSC curves indicates that thermally unstable defects were annihilated through structural relaxation. During nanoindentation, the structural relaxation did not have a significant influence on the serrated plastic flow behavior. However, Structural relaxation shows an obvious effect in increasing both the hardness and elastic modulus, which is attributed to the annihilation of thermally unstable defects that resulted from the relaxation.
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The hardness of 4H-SiC, which was high-temperature (500 K) helium-Implanted to fluences of 3 x 10(16) Ions cm(-2) and subsequently thermally annealed at the temperature ranging from 773 to 1273 K, was studied by nanoindentation It is found that the hardness of the implanted 4H-SiC increases at the first, then decreases, and then increases again with increasing annealing tempeature in the temperature range of 500-1273 K, and significant increase in hardness is observed at 773 K. The behavior is ascribed to the changes of the density, length, and tangling of the covalent Si-C bond through the recombination of point defects, clustering of He-vacancy, and growth of helium bubbles during the thermal annealing
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调查了安达市盐碱地生物资源环境研究中心试验区羊草Leymus chinensis地土壤物理性状,包括土壤硬度、含水量、饱和导水率、粒径分布、剖面特征和土壤温度等。阐明土地碱化对土壤物理性质的影响,为安达市以及松嫩平原生态环境的修复和土地资源的永续利用提供科学依据。同时,讨论了地下水化学成分和土壤冻融变化对碱化的可能影响,认为在没有植被覆盖的条件下,冻融变化会加剧土壤的碱化程度。
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The Mg-8Gd-0.6Zr-xHo (x = 1, 3 and 5, mass%) alloys were prepared by casting technology, and structures, aging strengthening mechanism and mechanical properties of the alloys were investigated. The age behaviors and the mechanical properties are improved by adding Ho addition. The structures of the alloys are characterized by the present of rosette-shaped equiaxed grains. The peak hardness value of the Mg-8Gd-0.6Zr-3Ho alloy is 100 Hv, which is about 30% higher than that of Mg-8Gd-0.6Zr alloy.