Abnormal photoabsorption in high resistance GaN epilayer

Unintentionally doped GaN epilayers are grown by the metalorganic chemical vapor deposition (MOCVD). Photovoltaic (PV) spectroscopy shows that there appears an abnormal photoabsorption in some undoped GaN films with high resistance. The peak energy of the absorption spectrum is smaller than the intrinsic energy band gap of GaN. This phenomenon may be related to exciton absorption. Then metal-semiconductor-metal (MSM) Schottky photodetectors are fabricated on these high resistance epilayers. The photo spectrum responses are different when the light individually irradiates each of the two electrodes with the photodetector which are differently biased. When the excitation light irradiates around the reverse biased Schottky junction, the responsivity is almost one order of magnitude larger than that around the forward biased junction. Furthermore, when the excitation light irradiates the reverse biased Schottky junction, the peak energy of the spectrum has a prominent red-shift compared with the peak energy of the spectrum measured with the excitation light irradiating the forward biased Schottky junction. The shift value is about 28 meV, and it is found to be insensitive to temperature. According to the analyses of the distribution of the electric field within the MSM device and the different dependences of the response on the electric field intensity between the free carriers and excitons, a reliable explanation for the different response among various areas is proposed.

SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS

It is shown that Li diffusion of GaAs can give rise to semi-insulating samples with electrical resistivity as high as 10(7) OMEGAcm in undoped, n-type, and p-type starting materials. The optical properties of the compensated samples are correlated with the depletion of free carriers caused by the Li diffusion. The radiative recombination of the Li-compensated samples is dominated by emissions with excitation-dependent peak positions that shift to lower energies with increasing compensation. The photoluminescence properties are characteristic of fluctuations of the electrostatic potential in strongly doped, compensated crystals.

Magnetospectroscopy of bound phonons in high purity GaAs

Far infrared magnetophotoconductivity performed on high purity GaAs reveals the existence of fine structures in the resonant magnetopolaron regions. The fine structures are attributed to the presence of bound phonons due to multiphonon processes. We demonstrate that the magnetopolaron energy spectrum consists of bound phonon branches and magnetopolaron branches. Our results also indicate that different phonons are bound to a single impurity, and that the bound phonon in Si-doped GaAs is a quasilocalized mode.

The influence of nuclear orientation in fusion dynamics

Fusion barriers have been calculated for different orientations of the axial symmetry axis of deformed projectile-and target-nucleus. Using the concept of dinuclear system, considering the strong competition between fusion and quasifission processes, by solving the master equation numerically to calculate the fusion probability of superheavy nuclei, we have estimated the dependence of the fusion probabilities for Ge-76 + Pb-208 and Ca-48 + Pu-244 on the orientation angles of the symmetry axis of projectile-and target-nucleus, which shows that belly-belly is the most favorable orientation for synthesizing superheavy nuclei.

Three-Particle Coincidence of the Long Range Pseudorapidity Correlation in High Energy Nucleus-Nucleus Collisions

We report the first three-particle coincidence measurement in pseudorapidity (Delta eta) between a high transverse momentum (p(perpendicular to)) trigger particle and two lower p(perpendicular to) associated particles within azimuth |Delta phi| < 0.7 in root s(NN) = 200 GeV d + Au and Au + Au collisions. Charge ordering properties are exploited to separate the jetlike component and the ridge (long range Delta eta correlation). The results indicate that the correlation of ridge particles are uniform not only with respect to the trigger particle but also between themselves event by event in our measured Delta eta. In addition, the production of the ridge appears to be uncorrelated to the presence of the narrow jetlike component.

STATUS AND PROSPECTS OF HIRFL EXPERIMENTS ON NUCLEAR PHYSICS

HIRFL is an accelerator complex consisting of 3 accelerators, 2 radioactive beams lines, 1 storage rings and a number of experimental setups. The research activities at HIRFL cover the fields of radio-biology, material science, atomic physics, and nuclear physics. This report mainly concentrates on the experiments of nuclear physics with the existing and planned experimental setups such as SHANS, RIBLL1, ETF, CSRe, PISA and HPLUS at HIRFL.

Control of chemical reaction in high-intensity laser field

The prospects of control chemical reaction in high-intensity laser field are talked about here, and some experimental and theoretical designs are reviewed and discussed also.

Multilayered core-shell structure of the dispersed phase in high-impact polypropylene

The multiphase morphology of high impact polypropylene (hiPP), which is a reactor blend of polypropylene (PP) with ethylene-propylene copolymer, was investigated by transmission electron microscopy, selected area electron diffraction, atomic force microscopy, and field-emission scanning electron microscopy techniques in conjunction with an analysis of the hiPP composition and chain structure based on solvent fractionation, C-13-NMR, and differential scanning calorimetry measurements.

Determination of ultra-trace concentrations of elements in high purity tellurium by inductively coupled plasma mass spectrometry after Fe(OH)(3) coprecipitation

In this work, a method was established for the determination of impurities in high purity tellurium by inductively coupled plasma mass spectrometry (ICP-MS) after Fe(OH)(3) coprecipitation. After comparison of coprecipitation ability and separation efficiency between Fe(OH), and Al(OH)(3), Fe(OH)(3) was chosen as the precipitate. A separation factor of 160 for 200 mg tellurium was obtained under conditions of pH 9 and 2 mg of Fe3(+). The 13 elements, such as Bi, Sn, Pb, In, Tl, Cd, Cu, Co, Ni, Zn, Ti, Be and Zr, could be almost completely coprecipitated under these conditions. In addition, Te memory effect imposed on the ICP-MS instrument was assessed, as well as Te matrix effect that caused the low recovery of Ga, As, Sb and V in real sample was discussed. Finally, the method was evaluated through recovery test and was applied to practical sample analysis, with detection limits of most of the elements being below 0.15 mug g(-1) and R.S.D. below or at approximately 10%, which indicated that this method could fully satisfy the requirements for analysis of 99.999% similar to 99.9999% high purity Te.