Understanding the kink formation in GaAs/InAs heterostructural nanowires

The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs nanowires changed their growth directions from [1 1 1 ]B to other 〈111〉B directions. The kinks formation is ascribed to the large compressive misfit strain at the GaAs/InAs interface (7.2% lattice mismatch between GaAs and InAs) and the high mobility of indium species during MOCVD growth. The in-depth analysis of the kinks formation was done by growing InAs for short times on the GaAs nanowires and characterizing the samples. The hindrance to compressively strain InAs to form coherent layers with GaAs pushed the InAs/Au interfaces to the sides of the GaAs nanowires growth ends. New InAs/Au interfaces have generated at the sides of GaAs nanowires, due to lateral growth of InAs on GaAs nanowires. These new interfaces led the InAs nanowires growth in other 〈111〉B directions. The morphological and structural features of these heterostructural kinked nanowires were characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. © 2006 IEEE.

Understanding and navigating industrial emergence

Industrial emergence is a broad and complex domain, with relevant perspectives ranging in scale from the individual entrepreneur and firm with the business decisions and actions they make to the policies of nations and global patterns of industrialisation. The research described in this article has adopted a holistic approach, based on structured mapping methods, in an attempt to depict and understand the dynamics and patterns of industrial emergence across a broad spectrum from early scientific discovery to large-scale industrialisation. The breadth of scope and application has enabled a framework and set of four tools to be developed that have wide applicability. The utility of the approaches has been demonstrated through case studies and trials in a diverse range of industrial contexts. The adoption of such a broad scope also presents substantial challenges and limitations, with these providing an opportunity for further research. © IMechE 2013.

Progress in the understanding of Ni silicide formation for advanced MOS structures

Metallic silicides have been used as contact materials on source/drain and gate in metal-oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget, and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed in recent technologies since Pt allows to stabilize NiSi at high temperature. The presence of Pt and the very low thickness (<10 nm) needed for the device contacts bring new concerns for actual devices. In this work, in situ techniques [X-ray diffraction (XRD), X-ray reflectivity (XRR), sheet resistance, differential scanning calorimetry (DSC)] were combined with atom probe tomography (APT) to study the formation mechanisms as well as the redistribution of dopants and alloy elements (Pt, Pd.) during the silicide formation. Phenomena like nucleation, lateral growth, interfacial reaction, diffusion, precipitation, and transient phase formation are investigated. The effect of alloy elements (Pt, Pd.) and dopants (As, B.) as well as stress and defects induced by the confinement in devices on the silicide formation mechanism and alloying element redistribution is examined. In particular APT has been performed for the three-dimensional (3D) analysis of MOSFET at the atomic scale. The advances in the understanding of the mechanisms of formation and redistribution are discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Understanding the cascode switching process

Cascode circuits are useful for driving normally-on wide-bandgap devices, but the switching process must be properly understood to optimise their design. Little detailed consideration has previously been given to this. This paper proposes an idealised mathematical description of the cascode switching process, which is used to show that the stray inductance between the two devices plays a critical role in switching. This idealised model is used to propose methods for optimising cascode performance in different applications. © 2013 IEEE.

A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes

The electroluminescence efficiency at room temperature and low temperature (15 K) in a wide-narrow-well InGaN/GaN light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. A reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced Auger recombination is the root for the droop at high excitation levels.

scenario-based interactive intention understanding in pen-based user interfaces

Interactive intention understanding is important for Pen-based User Interface (PUI). Many works on this topic are reported, and focus on handwriting or sketching recognition algorithms at the lexical layer. But these algorithms cannot totally solve the problem of intention understanding and can not provide the pen-based software with high usability. Hence, a scenario-based interactive intention understanding framework is presented in this paper, and is used to simulate human cognitive mechanisms and cognitive habits. By providing the understanding environment supporting the framework, we can apply the framework to the practical PUI system. The evaluation of the Scientific Training Management System for the Chinese National Diving Team shows that the framework is effective in improving the usability and enhancing the intention understanding capacity of this system.