Prevention of experimental diabetes by Uncaria tomentosa extract: Th2 polarization, regulatory T cell preservation or both?

Ethnopharmacological relevance: Uncaria tomentosa (Willd.) DC (Rubiaceae) is a species native to the Amazon rainforest and surrounding tropical areas that is endowed with immunomodulatory properties and widely used around the world. In this study we investigated the immunomodulatory potential of Uncaria tomentosa (UT) aqueous-ethanol extract on the progression of immune-mediated diabetes.Materials and methods: C57BL/6 male mice were injected with MLDS (40 mg/kg) and orally treated with UT at 10-400 mg/kg during 21 days. Control groups received MLDS alone or the respective dilution vehicle. Pancreatic mononuclear infiltrate and beta-cell insulin content were analyzed by HE and immunohistochemical staining, respectively, and measured by digital morphometry. Lymphocyte immunophenotyping and cytokine production were determined by flow cytometry analysis.Results: Treating the animals with 50-400 mg/kg of UT caused a significant reduction in the glycemic levels, as well as in the incidence of diabetes. The morphometric analysis of insulitis revealed a clear protective effect. Animals treated with UT at 400 mg/kg presented a higher number of intact islets and a significant inhibition of destructive insulitis. Furthermore, a significant protection against the loss of insulin-secreting presented beta-cells was achieved, as observed by a careful immunohistochemical evaluation. The phenotypic analysis indicated that the groups treated with higher doses (100-400 mg/kg) presented CD4(+) and CD8(+) T-cell values similar to those observed in healthy animals. These same higher doses also increased the number of CD4(+)CD25(+)Foxp3(+) regulatory T-cells. Moreover, the extract modulated the production of Th1 and Th2, with increased levels of IL-4 and IL-5.Conclusions: The extract was effective to prevent the progression of immune-mediated diabetes by distinct pathways. (C) 2011 Elsevier B.V. All rights reserved.

Muon transverse polarization in the K-l2 gamma decay in the standard model

The muon transverse polarization in the K+-->mu(+)nugamma process induced by the electromagnetic final state interaction is calculated in the framework of the standard model. It is shown that one loop contributions lead to a nonvanishing muon transverse polarization. The value of the muon transverse polarization averaged over the kinematical region of E(gamma)greater than or equal to20 MeV is equal to 5.63x10(-4).

Vacuum polarization effects in hyperon-rich dense matter - a nonperturbative treatment

We derive the equation of state (EOS) for electrically charged neutral dense matter using the quantum hadrodynamics (QHD) model. This is carried out in a non-perturbative manner including quantum corrections for baryons through a realignment of vacuum with baryon-antibaryon condensates. This yields the results of relativistic Hartree approximation of summing over baryonic tadpole diagrams. The quantum corrections from the scalar meson is also taken into account in a similar way. This leads to a softening of the EOS for the hyperonic matter. The formalism also allows Lis to make a self-consistent calculation of the in-medium sigma meson mass. The effects of such quantum corrections on the composition of charged neutral dense matter is considered. The effect of the resulting EOS on the structure of neutron stars is also studied.

Lepton transverse polarization in the B -> Dl nu(l) decay due to the electromagnetic final state interaction

The effect of lepton transverse polarization in B-0-->D(-)l(+)nu(l), B+-->(D) over bar (0)l(+)nu(l) decays (l=tau,mu) is analyzed within the framework of the standard model in the leading order of heavy quark effective theory. It is shown that a nonzero transverse polarization appears due to the electromagnetic final state interaction. The diagrams with intermediate D,D* mesons contributing to the nonvanishing P-T are considered. Regarding only the contribution of these mesons, the values of the tau-lepton transverse polarization averaged over the physical region in the B-0-->D(-)tau(+)nu(l) and B+-->(D) over bar (0)tau(+)nu(l) decays are equal to 2.60x10(-3) and -1.59x10(-3), respectively. In the case of muon decay modes the values of [P-T] are equal to 2.97x10(-4) and -6.79x10(-4).

Vacuum Polarization Tensor for QED in the Light Front Gauge

The use of light front coordinates in quantum field theories (QFT) always brought some problems and controversies. In this work we explore some aspects of its formalism with respect to the employment of dimensional regularization in the computation of the photon's self-energy at the one-loop level and how the fermion propagator has an important role in the outcoming results.

Measurement of the Polarization of the Upsilon(1S) and Upsilon(2S) States in pp Collisions at s=1.96 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Measurement of the Polarization of W Bosons with Large Transverse Momenta in W plus jets Events at the LHC

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Induced polarization, resistivity, and self-potential: a case history of contamination evaluation due to landfill leakage

This article compares the efficiency of induced polarization (IP) and resistivity in characterizing a contamination plume due to landfill leakage in a typical tropical environment. The resistivity survey revealed denser electrical current flow that induced lower resistivity values due to the high ionic content. The increased ionic concentration diminished the distance of the ionic charges close to the membrane, causing a decrease in the IP phenomena. In addition, the self-potential (SP) method was used to characterize the preferential flow direction of the area. The SP method proved to be effective at determining the flow direction; it is also fast and economical. In this study, the resistivity results were better correlated with the presence of contamination (lower resistivity) than the IP (lower chargeability) data.

Dielectric and ferroelectric characteristics of barium zirconate titanate ceramics prepared from mixed oxide method

Barium zirconium titanate (BZT) ceramics were prepared by mixed oxide method. X-ray diffraction showed the presence of a single phase while Raman scattering confirmed structural transitions as a function of different Zr/Ti ratio. The addition of Zr strongly influenced the crystal structure and electrical properties of the ceramics. A typical hysteresis loops were observed for all investigated compositions. BZT ceramics with 15 mol% Zr have shown a ferroelectric to paraelectric transition at around 77 degrees C. (C) 2007 Published by Elsevier B.V.

Ferroelectric and dielectric properties of vanadium-doped Ba(Ti0.90Zr0.10)O-3 ceramics

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Improvement of fatigue resistance on La modified BiFeO(3) thin films

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Size effects of polycrystalline lanthanum modified Bi4Ti3O12 thin films

The film thickness dependence on the ferroelectric properties of lanthanum modified bismuth titanate Bi3.25La0.75Ti3O12 was investigated. Films with thicknesses ranging from 230 to 404 nut were grown on platinum-coated silicon substrates by the polymeric precursor method. The internal strain is strongly influenced by the film thickness. The morphology of the film changes as the number of layers increases indicating a thickness dependent grain size. The leakage current, remanent polarization and drive voltage were also affected by the film thickness. (c) 2007 Elsevier Ltd. All rights reserved.

Dielectric Spectroscopy Analyses of SrBi4Ti4O15 Films Obtained from Soft Chemical Solution

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Nanoscale electromechanical properties of CaCu3Ti4O12 ceramics

Piezoresponse Force Microscopy (PFM) is used to characterize the nanoscale electromechanical properties of centrosymmetric CaCu3Ti4O12 ceramics with giant dielectric constant. Clear PFM contrast both in vertical (out-of-plane) and lateral (in-plane) modes is observed on the ceramic surface with varying magnitude and polarization direction depending on the grain crystalline orientation. Lateral signal changes its sign upon 180 degrees rotation of the sample thus ruling out spurious electrostatic contribution and confirming piezoelectric nature of the effect. Piezoresponse could be locally reversed by suitable electrical bias (local poling) and induced polarization was quite stable showing long-time relaxation (similar to 3 hrs). The electromechanical contrast in unpoled ceramics is attributed to the surface flexoelectric effect (strain gradient induced polarization) while piezoresponse hysteresis and ferroelectric-like behavior are discussed in terms of structural instabilities due to Ti off-center displacements and structural defects in this material. (C) 2011 American Institute of Physics. [doi:10.1063/1.3623767]

Study of the dielectric and ferroelectric properties of chemically processed BaxSr1-xTiO3 thin films

Polycrystalline BaxSr1-xTiO3 (x = 0.4 and 0.8) thin films with a perovskite structure were prepared by the polymeric precursor method on a platinum-coated silicon substrate. High-quality thin films with uniform composition and thickness were successfully produced by dip-coating and spin-coating techniques. The resulting thin films prepared by dip and spin-coating showed a well-developed dense polycrystalline structure with uniform grain size distribution. The metal-BST-metal structure of the thin films displays good dielectric and ferroelectric properties. The ferroelectric nature to BaxSr1-xTiO3 (x = 0.8) thin film, indicated by butterfly-shaped C-V curves and confirmed by the hysteresis curve, showed 2P(r) = 5.0 muC/cm(2) and E-c = 20 kV/cm. The capacitance-frequency curve reveals that the dielectric constant may reach a value of up to 794 at 1 kHz. on the other hand, the BaxSr1-xTiO3 (x = 0.4) thin films had paraelectric nature and dielectric constant and the dissipation factor at a frequency of 100 kHz were 680 and 0.01, respectively, for film annealed at 700 degreesC. In addition, an examination of the film's I-V curve at room temperature revealed the presence of two conduction regions in the BaxSr1-xTiO3 (x = 0.4 and 0.8) thin films, showing ohmic-like behavior at low voltage and a Schottky-emission or Poole-Frenkel mechanism at high voltage. (C) 2001 Elsevier B.V. B.V. All rights reserved.