Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films

We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.

Experimental study of Electro-elasto-capillarity:Electric field driven unwrapping of water drop with elastic film

<正>Elasto-capillarity has drawn much of scientists' attention in the past several years.By inducing electric field into the droplet,the encapsulation and release procedure can be realized and we call it electro-elasto-capillarity(EEC).EEC offers a novel method for micro-scale actuation and self-assemble of moveable devices.It also provides a good candidate for the drug delivery at micro- or nanoscale.

Electric-dipole transitions in 165Er

High-spin states of 165Er were studied using the 160Gd(9Be, 4n)reaction at beam energies of 42 and 45 MeV. The previously known bands based on the ν5/2-[523] and ν5/2+[642] configurations have been extended to high-spin states. Electric-dipole transitions linking these two opposite parity bands were observed. Relatively large B(E1) values have been extracted experimentally and were attributed to octupole softness.

Experimental study on the electric-sweep scanner and ion beam emittance of electron cyclotron resonance ion source

With a latest developed electric-sweep scanner system, we have done a lot of experiments for studying this scanner system and ion beam emittance of electron cyclotron resonance (ECR) ion source. The electric-sweep scanner system was installed on the beam line of Lanzhou electron resonance ion source No. 3 experimental platform of Institute of Modem Physics. The repetition experiments have proven that the system is a relatively dependable and reliable emittance scanner, and its experiment error is about 10%. We have studied the influences of the major parameters of ECR ion source on the extracted ion beam emittance. The typical results of the experiments and the conclusions are presented in this article.

Isospin-symmetry breaking effects on the strange electric and magnetic form factors of the nucleon

We examine the electric and magnetic strange form factors of the nucleon in the pseudoscalar-vector SU(3) Skyrme model, with special emphasis on the effects of isospin symmetry breaking (ISB). It is found that ISB has a nontrivial effect on the strange vector form factors of the nucleon and its contribution to the nucleon strangeness is significantly larger than one might naively expect. Our calculations and discussions may be of some significance for the experimental extraction of the authentic strangeness.

Evolution of spiral wave and pattern formation in a vortical polarized electric field

In this paper, the evolution of the pattern transition induced by the vortical electric field (VEF) is investigated. Firstly, a scheme is suggested to generate the VEF by changing the spatial magnetic field. Secondly, the VEF is imposed on the whole medium, and the evolutions of the spiral wave and the spatiotemporal chaos are investigated by using the numerical simulation. The result confirms that the drift and the breakup of the spiral wave and the new net-like pattern are observed when different polarized fields are imposed on the whole medium respectively. Finally, the pattern transition induced by the polarized field is discussed theoretically.

Study on the localization of the electric dipole sources

The research of dipole source localization has great significance in both clinical research and applications. For example, the EEG recording from the scalp is widely used for the localization of sources of electrical activity in the brain. This paper presents a closed formula that describes the electric field of dipoles at arbitrary position, which is a linear transformer called the transfer matrix. The expression of transfer matrix and its many useful characteristics are given, which can be used for the analysis of the electrical fields of dipoles. This paper also presents the closed formula for determining the location and magnitude of single dipole or multi-dipoles according to its electrical field distribution. A calculation result for a single dipole shows that the dipole will be located at the midpoint of a line segment if there are equivalent fields at its two ends.