Electrophoretic deposition of (Zn, Nb)SnO2-films varistor superficially modified with Cr3+

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Comparative gas sensor response of SnO2, SnO and Sn3O4 nanobelts to NO2 and potential interferents

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Improved electrical transport in lightly Er-doped sol-gel spin-coating SnO2 thin films, processed by photolithography

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Luminescence of Eu3+ in the thin film heterojunction GaAs/SnO2

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Photoluminescence of the Eu-doped thin film heterojunction GaAs/SnO2 and rare-earth doping distribution

Tin dioxide (SnO2) thin films doped with Eu3+, are deposited by the sol-gel-dip-coating process on top of GaAs films, which is deposited by resistive evaporation on glass substrate. This heterojunction assembly presents luminescence from the rare-earth ion, unlike the SnO2 deposition directly on a glass substrate, where emissions from the Eu3+ transitions are absent. The Eu3+ transitions are clearly identified and are similar to the observation on SnO2 pressed powder (pellets), thermally treated at much higher temperatures. However, in the form of heterojunction films, the Eu emission comes along a broad band, located at higher energy compared to Eu3+ transitions, which is blue-shifted as the thermal annealing temperature increases. The size of nanocrystallites points toward quantum confinement or electron transfer between oxygen vacancies, originated from the disorder in the material, and trivalent rare-earth ions, which present acceptor-like character in this matrix. This electron transfer may relax for higher temperatures in the case of pellets, and the broad band is eliminated.

Characterization of superconducting BSCCO/CaSiO3 and BSCCO/CaZrO3 Ag PIT wires

The addition of two compounds, calcium silicate and calcium zirconate was tested in the preparation of Bi: 2212 silver sheathed wires by powder-in-tube method. The wires were treated in an atmosphere of O-2/Ar using partial melting method. The characterizations were structural and on their electrical and magnetic properties. It was found that the addition of calcium silicate or zirconate promoted higher transition temperatures, up to 116 K for BSCCO with 1wt.% CaSiO3. The critical current densities determined by transport and magnetization measurements were improved in comparison with the wires without any addition.

Synthesis and characterization of nanostructured TiO2-SnO2 composite

Nanostructured composites based on titanium dioxide have been studied in order to improve optical and photo-catalytic properties, as well as their performance in gas sensors. In this work, titanium and tin dioxides were simultaneously synthesized by the polyol method resulting in TiO2 platelet coated with SnO2 nanoparticles as was observed by scanning electron microscopy. The thermal analysis showed that the combined synthesis promotes more easily the crystallization of the TiO2 rutile phase. The composite obtained after heat treatment at 500 degrees C showed to be formed of almost only rutile phases of both oxides. The optical properties analyzed by UV-Vis spectroscopy showed that the combined oxides have higher absorbance, which reinforces a model found in the literature based on the flow of photo-generated electrons to the conduction band of SnO2 delaying the recombination of charges.

Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Investigation of photoinduced electrical properties in the heterojunction TiO2/SnO2

TiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550 degrees C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100 degrees C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. The electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65 eV) seems to excite the most external layer whereas a InGaN LED (2.75 eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.

Characteristics of PbO-BiO1.5-GaO1.5 glasses melted in SnO2 crucibles

PbO-BiO 1.5-GaO 1.5-based glasses are good candidates for optical applications, because of some of their interesting characteristics, such as high refraction indices and high transmission in the ultraviolet (UV), visible (VIS), and infrared (IR) regions. A limited stage in the processing of these glasses is the corrosion that is caused by the melt in all currently used conventional crucibles, such as noble metals (platinum or gold) and Al 2O 3. The absorption of crucible material by the glass composition may reduce the transmission level, the cutoff in the UV-VIS, and IR regions, and the thermal stability. In this study, a SnO 2 crucible has been tested for PbO-BiO 1.5-GaO 1.5 molten glass. Optical and thermal analyses show, in some cases, advantages over the use of platinum and Al 2O 3 crucibles. A visible cutoff value of 474 nm has been measured, and a longer melting time (850°C for 4 h) results in a significant reduction of the O-H absorption band at 3.2 μm.

Monofilamentary Ag/Bi:2212 tapes - Effects of silver powder addition

The Bi-Sr-Ca-Cu-O system has been one of the most studied superconducting ceramic materials for industry applications. The most of the studies with this aim are on silver/ceramic composites, due to the benefits and great compatibility of this metal with the oxide. Tapes made by the powder in tube (PIT) method have been successfully tested in pilot power plants in many countries but in Brazil. In this paper, 5, 10, and 20-wt% silver powders are introduced to compose the core of the tape along with the Bi:2212 ceramic powder. The results of electrical experiments are compared with those made with no silver addition Ag tapes. The best current density, at 60 K and no applied magnetic field, was found for the 10-wt% silver proportion, doubling the value obtained for the tape with no silver in the core.

The changes on microstructure and electrical properties of Bi:2223/Ag composite as a function of the granulation and the content of the added silver powder

The Bi-Sr-Ca-Cu-O system has been one of the most studied superconducting ceramic materials for industry applications. The most of the studies with this aim are on silver/ceramic composites, due to the benefits and great compatibility of this metal with the oxide. In this paper we describe a systematic and comparative study on Ag/BSCCO composite, made by the citrate route, in which the ceramic pellets are sintered in the presence of silver powder using several proportions and having several granulations. It was observed that the introduction of fine (0.5 and 2 μm) silver powder in the proportions of 5 wt. % always implies in a better critical current density compared to the no silver pellet. According to the results, the silver powder in excess of 5 wt.% may not promote best electrical properties, depending on the size of the silver particles.

The urochloa foliar blight and collar rot pathogen rhizoctonia solani AG-1 IA emerged in South America via a host shift from rice

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Characterization of superconducting BSCCO/CaSiO3 and BSCCO/CaZrO3 Ag PIT wires

The addition of two compounds, calcium silicate and calcium zirconate was tested, in the preparation of Bi: 2212 silver sheathed wires by powder-in-tube method, which were successfully tested previously in processing chips. The wires were treated in an atmosphere of O2/Ar using partial melting method. The characterizations were structural and on their electrical and magnetic properties. As the results, transition temperatures were higher than the expected for this stage, ranged from 105K (BSCCO880) to 116K (+Si883). The critical current densities encountered in transport and magnetization measurements were improved in comparison with the wires without addition.

A theoretical analysis of Sb5+ incorporation in highly doped SnO2 matrix

We have used the periodic quantum-mechanical method with density functional theory at the B3LYP hybrid functional level in order to study the doping of SnO2 with pentavalent Sb5+. The 72-atom 2x3x2 supercell SnO2 (Sn24O48) was employed in the calculations. For the SnO2:4%Sb , one atom of Sn was replaced by one Sb atom. For the SnO2:8%Sb, two atoms of Sn were replaced by two Sb atoms. The Sb doping leads to an enhancement in the electrical conductivity of this material, because these ions substitute Sn4+ in the SnO2 matrix, leading to an electronic density rise in the conduction band, due to the donor-like behavior of the doping atom. This result shows that the bandgap magnitude depends on the doping concentration, because the energy value found for SnO2:4%Sb was 2.8eV whereas for SnO2:8%Sb it was 2.7eV. It was also verified that the difference between the Fermi level and the bottom of the conduction band is directly related to the doping concentration. - See more at: http://www.eurekaselect.com/117255/article#sthash.Z5ezhCQD.dpuf