Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates

In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates; Transmission electron microscopy (TEM) and photoluminescence (PL) results confirm QDs formation for all samples. The PL spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. Highest PL integral intensity is observed from QDs on (411)B surfaces, which shows a potential for improving the optical properties of QDs by using high-index surface. (C) 2000 Elsevier Science B.V. All rights reserved.

Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy

The deposition of InxGa1-xAs (0.2 less than or equal to x less than or equal to 0.5) on (311)B GaAs surfaces using solid source molecular beam epitaxy (MBE) has been studied. Both AFM and photoluminescence emission showed that homogeneous quantum dots could be formed on (311)B GaAs surface when indium composition was around 0.4. Indium composition had a strong influence on the size uniformity and the lateral alignment of quantum dots. Compared with other surface orientation, (100) and (n11) A/B (n=1,2,3), photoluminescence measurement confirmed that (311)B surface is the most advantageous in fabricating uniform and dense quantum dots.

Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces

Two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(311)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows deferring from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-xAs solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [01 (1) over bar] and [(2) over bar 33], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between neighbouring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. Photoluminescence (PL) result demonstrates that QDs grown on (311)B have the narrowest linewidth and the strongest integrated intensity, compared to those grown on (100) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces

The two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(3 1 1)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows differing from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-As-x solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [0 1 (1) over bar] and [(2) over bar 3 3], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between the neighboring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. The photoluminescence (PL) result demonstrates that QDs grown on (3 1 1)B have the narrowest linewidth and the strongest integrated intensity, compared to those on (1 0 0) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates

Self-assembled InxGa1-xAs quantum dots (QDs) on (311)A/B GaAs surfaces have been grown by molecular beam epitaxy (MBE). Spontaneously ordering alignment of InxGa1-xAs with lower In content around 0.3 have been observed. The direction of alignment orientation of the QDs formation differs from the direction of misorientation of the (311)B surface, and is strongly dependent upon the In content x. The ordering alignment become significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on (100) or (311)A substrates. (C) 1999 Elsevier Science B.V. All rights reserved.

基于AJAX的B/S电子表单填写模式研究

电子表单系统是电子政务建设中重要的一个环节。论述了电子表单系统独立的必要性,调研了几种现有电子表单系统的优缺点,并在此基础上提出一种新型电子表单的框架实现。该电子表单系统提供了一种新型B/S在线填写模式,模式基于AJAX,只需要能支持AJAX的浏览器,不需安装任何附加控件,具有方便快捷的特点。利用AJAX进行数据传输,能有效地节省带宽,节省用户等待时间,并能给用户进行表单填写提供一个友好灵活的操作界面。

5-氨基乙酰丙酸对日光温室番茄生长发育和产量品质的影响

为外源5-氨基乙酰丙酸(ALA)在日光温室蔬菜上的应用提供科学依据。【方法】研究了不同浓度ALA处理对日光温室番茄生产的影响。【结果】ALA以及ALA+N叶面施用均明显提高了番茄植株株高、叶绿素相对含量和果实产量,并改善了番茄果实品质;与对照相比,外源ALA各处理植株株高、叶绿素相对含量和单株生物产量均有明显提高,其中D处理(ALA1号肥料第1次2 kg/hm2,第2~4次1 kg/hm2)效果最佳,植株株高、叶绿素相对含量及单株生物产量分别提高27.18%,17.75%和13.93%;外源ALA对番茄果实产量和品质也有明显的提高和改善作用,其中处理B(ALA1号肥料第1次0.5 kg/hm2,第2~4次0.3 kg/hm2)对果实产量效果最明显,处理E(ALA3号肥料第1次2.5 kg/hm2,第2~4次1.5 kg/hm2)对果实品质效果最佳。【结论】处理E(ALA3号肥料第1次2.5 kg/hm2,第2~4次1.5 kg/hm2)既有利于番茄生长发育,又能增加产量并改善品质,为最佳的ALA施用量及方法。

新型绿色荧光体ABLa(PO_4)_2:Ce, Tb研究(A = K, Na; B = Mg, Zn)

本工作完成了磷酸盐化合物ABLa(PO_4)_2的合成，这些磷盐均可在900 ℃左右合成；对其进行了结构测试与表征，发现这些磷酸盐属于单斜晶系独居石结构，与LaPO_4同构，具有很相近的晶胞参数；系统地研究了RE~(3+)离子(RE = Ce,Tb,Dy)在ABLa(PO_4)_2基质中的发光与能量传递规律，研究了Ce~(3+)、Tb~(3+)离子发光中心与基质晶格之间的相互作用，计算了这些稀土离子之间能量传递的临界距离Rc(dd)，结果表明ABLa(PO_4)_2基质中Ce~(3+)离子与基质晶格之间的相互作用属于中等程度耦合，Tb~(3+)离子与基质晶格之间的相互作用属于无辐射多声子过程，Ce~(3+)→Ce~(3+)、Ce~(3+)→Tb~(3+)能量迁移临界距离均与LaPO_4中相近，Ce~(3+) → Ce~(3+)相对于Ce~(3+) → Tb~(3+)属于快过程，Ce~(3+) → Ce~(3+)能量传递对ABLa(PO_4)_2:Ce,Tb荧光体的Tb~(3+)绿色发光起了重要的作用，ABLa(PO_4)_2基质是Ce~(3+)，Ce~(3+)-Tb~(3+)，Ce~(3+)-Dy~(3+)的优良发光基质；最后探讨了绿色荧光体ABLa(PO_4)_2:Ce，Tb的调制途径，主要研究了Ce~(3+)、Tb~(3+)离子的浓度效应，掺杂B_2O_3、Dy~(3+)、SiO_2对荧光体发光的影响及NH_4Cl的作用，结果表明Ce~(3+)、Tb~(3+)离子的适宜浓度分别为0.2～0.5和0.08～0.2，掺杂适量的B_2O_3、Dy~(3+)能很好地提高荧光体的发光，掺杂SiO_2、NH_4Cl不利荧光体发光。

用NMR、FT-IR、DSC和AFM的方法研究PP-b-PE的结构与性能

聚丙烯是一种优异的高分子材料，但其低温抗冲击性能欠佳，因而限制了其应用范围。采用PP与PE嵌段共聚来改善PP的抗冲击性能是世界上目前行之有效的方法，因而引起人们的重视。由于聚丙烯嵌段共聚物（PP-b-PE）是由多组分组成的复杂体系，对其组成和链的结构仍不十分清楚。因此，本工作选取国外（6组）和国内（5组）共计11组PP-b-PE样品，分别对其结构、性能及其影响因素进行了研究，为实际应用提供了依据。为了保证能将PP-b-PE中的橡胶成分抽提出来，先将PP-b-PE样品用二甲苯溶解，之后加入甲醇沉淀、过滤、干燥，最后用正庚烷抽提，使得PP-b-PE样品中正庚烷的不可溶物与可溶物完全分离。其中，可溶物即为橡胶，不可溶物为塑料。再利用高温核磁共振谱仪（NMR）、示差扫描量热仪（DSC）和傅立汗卜变换红外谱仪（FT-IR）等先进的分析技术手段进行结构分析，并用原子力显微镜（AFM）观察生产过程中样品的形貌。实验和分析结果表明：在正庚烷可溶物中含有低熔点的聚丙烯和嵌段长度不同且能结晶的聚乙烯；并且还含有属于乙丙无规共聚物橡胶部分的n值小于4的（-CH2-）n结构，以及嵌有结晶性的丙烯和乙烯链节。正庚烷的不可溶物主要为聚丙烯，及少量聚乙烯。对于不同物性的PP-b-PE而言，正庚烷不可溶物决定了其刚性，正庚烷可溶物决定了其韧性，并由其粘度比决定了橡胶在聚丙烯中的分布情况。用AFM来研究PP-b-PE中的橡胶颗粒的分布情况是非常好的分析方法。PP-b-PE样品中橡胶的含量及其组成成分将对PP-b-PE的性能产生很大的影响。国内用浆液法生产的PP-b-PE样品中橡胶含量相对于用液一气相法和气相法生产的要少，但在其正庚烷不可溶物中含有较多的乙烯。从而可以用控制乙烯的含量来改善其抗冲击性能，这是浆液法与液一气相法和气相法的最大区别。液一气相法和气相法生产的PP-b-PE样品中的正庚烷可溶物的含量和结构十分接近。结果表明，本文采用多种不同的先进的分析方法和实验手段对PP-b-PE的结构与性能的研究是一条有效可行的实验途径。

通过阴离子转Ziegler-Natta聚合机理转换合成PS-b-EPM

能够作为聚烯烃材料与其它聚合物材料共混增容剂的、含有聚烯烃链段的嵌段共聚物的合成，对于扩大聚烯烃材料的应用，获得性能优良的共混型聚合物材料具有重要意义。烯烃类单体聚合方法单一，而且其通用的聚合方法，Ziegler-Natta聚合，不是令人满意的合成嵌段共聚物的方法。因此，含有聚烯烃链段的嵌段共聚物的合成一直是比较困难的研究课题之一，近年来发展起来的阴离子转Ziegler-Natta聚合方法为合成这类嵌段共聚物开辟了新途径。阴离子转Ziegler-Natta聚合是利用阴离子聚合所得到的活性聚合物及其反离子与过渡金属化合物组成“Ziegler-Natta”催化剂使烯类单体聚合，从而得到含有聚烯烃链段和阴离子聚合物链段的嵌段共聚物的一种新的合成方法。这种结合两种聚合机理的聚合方法能够有效地避免单一机理聚合方法对单体的要求和限制，从而扩大了嵌段共聚物的合成范围。目前，有关阴离子转Ziegler-Natta聚合方法的研究工作尚属于初步阶段，许多基本问题还没有统一的结论。本工作的目的就是对这一聚合方法的聚合规律，特点等基本问题进行初步探讨，为今后这方面工作的开展奠定初步基础。本工作以阴离子转Ziegler-Natta聚合为方法，以PS-EPM嵌段共聚物为合成对象，并通过对产物的组成、分子量、序列分布、温度转变行为及形态的表征，可初步得到以下结论。1、在较低的催化剂浓度下，可使催化效率比较高。在本聚合体系下，最高可达694克EPM段/克Ti。这一数值与一般非载体钛催化体系相比是比较高的。2、在合适的聚合条件下，如聚合时间较短，聚合温度较低，可得到分子量分布较窄的嵌段共聚物，并且基本上不含有非嵌段烯烃共聚物。3、以聚苯乙烯作为阴离子段聚合物，可发生较明显的β-消除反应，使产物中含有难以分离的烯烃共聚物，本工作以几个单元的聚异戊二烯作为聚苯乙烯活性离子的端基，有效地抑制了β-消除反应的发生，得到了比较纯净的PS-EPM嵌段共聚物。5、由阴离子转来的“Ziegler-Natta聚合具有阴离子聚合和Ziegler-Natta聚合的共同特点，是介于阴离子聚合和Ziegler-Natta聚合之间的一种特殊聚合形式；在聚合初期主要呈现阴离子聚合特征随着聚合的进行，逐渐向具有Ziegler-Natta聚合特征的聚合形式过渡。

(1) Barnase、Barstar基因和TA29基因5'区调控顺序的PCR扩增、克隆和测序（2）水稻花粉核蛋白因子与TA29基因5'区调控顺序的相互作用

本文运用PCR技术，分别从烟草和B. amyloliquefaciens的基因组DNA中扩增出了TA29基因5'区调控顺序、Barnase和Barstar基因，克隆后进行序列分析，表明其核苷酸顺序与文献报道的一致，然后进行了初步的融合基因的构建。另外，凝胶滞后实验表明，水稻花粉（含绒毡层组织）细胞核中某种蛋白因子能够与TA29基因5'区调控顺序发生特异的结合。本文还对TA29基因5'区调控顺序及Barnase和Barstar基因的潜在应用价值和存在的问题进行了讨论。

Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)

We present photoelectron spectroscopic and low energy electron diffraction measurements of water adsorption on flat Si samples of the orientations (001), (115), (113), (5,5,12) and (112) as well as on curved samples covering continuously the ranges (001)-(117) and (113)-(5,5,12)-(112). On all orientations, water adsorption is dissociative (OH and H) and non-destructive. On Si(001) the sticking coefficient S and the saturation coverage Theta(sat) are largest. On Si(001) and for small miscuts in the [110]-azimuth, S is constant nearly up to saturation which proves that the kinetics involves a weakly bound mobile precursor state. For (001)-vicinals with high miscut angles (9-13 degrees), the step structure breaks down, the precursor mobility is affected and the adsorption kinetics changed. On (115), (113), (5,5,12) and (112), the values of S and Theta(sat) are smaller which indicates that not all sites are able to dissociate and bind water. For (113) the shape of the adsorption curves Theta versus exposure shows the existence of two adsorption processes, one with mobile precursor kinetics and one with Langmuir-like kinetics. On (5,5,12), two processes with mobile precursor kinetics are observed which are ascribed to adsorption on different surface regions within the large surface unit cell. From the corresponding values of S and Theta(sat), data for structure models are deduced. (C) 1997 Elsevier Science B.V.

Aggregation and precipitation in high dose as ion implanted Ge0.5Si0.5 alloy

Thermally stimulated redistribution and precipitation of excess arsenic in Ge0.5Si0.5 alloy has been studied by X-ray photoelectron spectroscopy (XPS), cross sectional transmission electron microscopy (XTEM) and X-ray energy disperse spectrometry (EDS). Samples were prepared by the implantation of 6 X 10(6) As+ cm(-2) and 100 keV with subsequent thermal processing at 800 degrees C and 1000 degrees C for 1 h. The XPS depth profiles from the implanted samples before and after the thermal annealing indicate that there is marked redistribution of the elements in heavily arsenic-implanted Ge0.5Si0.5 alloys during the annealing, including: (1) diffusion of As from the implanted region to the surface; (2) aggregation of Ge in the vicinity of the surface. A high density of precipitates was observed near the surface which were by XTEM and EDS identified as an arsenide. It is suggested that most of the implanted As in Ge0.5Si0.5 alloy exists in the form of GeAs.

重掺B对应变SiGe材料能带结构的影响

硅锗异质结双极晶体管(SiGe HBT)一般以重掺硼(B)的应变SiGe层作为基区.精确表征SiGe材料能带结构对SiGe HBT的设计具有重要的意义.在应变SiGe材料中,B的重掺杂一方面会因为重掺杂效应使带隙收缩,另一方面,B的引入还会部分补偿Ge引起的应变,从而改变应变引起的带隙变化.在重掺B的应变SiGe能带结构研究中,采用半经验方法,考虑了B的应变补偿作用对能带的影响,对Jain-Roulston模型进行修正,并分析了重掺杂引起的带隙收缩在导带和价带的分布.