The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates

In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates; Transmission electron microscopy (TEM) and photoluminescence (PL) results confirm QDs formation for all samples. The PL spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. Highest PL integral intensity is observed from QDs on (411)B surfaces, which shows a potential for improving the optical properties of QDs by using high-index surface. (C) 2000 Elsevier Science B.V. All rights reserved.

柞蚕核型多角体病毒B-ORF6L、ptp、lef-12基因克隆及表达

本研究克隆了柞蚕核型多角体病毒（Antheraea pernyi nucleopolyhedrovirus，ApNPV）基因组pstⅠ-B、pstⅠ-C、pstⅠ-J三个片段，测序分析了pstⅠ-B、pstⅠ-C片段全序列及pstⅠ-J片段一端序列。ApNPV pstⅠ-C片段长6663 bp，包括9个完整ORF及2个不完整ORF；ApNPV pstⅠ-B片段长7406 bp，包括5个完整ORF及2个不完整ORF。ApNPV pstⅠ-J片段末端测定的954 bp序列包括lef-12完整序列及p47和gta部分序列。本研究共鉴定21个ApNPV ORF序列，其中20个属首次报道，占ApNPV已报道基因数的50％。编码ORF同源性分析及克隆片断ORF组成、基因排列顺序分析表明ApNPV与鳞翅目NPV第Ⅰ类群中的OpMNPV、CfMNPV、CfDefNPV、EppoNPV关系较近。 本研究克隆了ApNPV B-ORF6L、ptp-1、ptp-2及lef-12 四个基因，并对这四个基因在柞蚕蛹体内的表达进行了转录分析，结果表明：ApNPV ptp-1、lef-12是早期基因，B-ORF6L、ptp-2是晚期基因。本研究将ApNPV B-ORF6L、ptp-2亚克隆至原核表达载体，并在大肠杆菌中获得高效表达。SDS-PAGE及Western blot分析表明：PTP-2原核表达分子量与预测分子量相符，B-ORF6L融合表达分子量较预测的分子量偏大。以原核表达的B-ORF6L、PTP-2蛋白作为抗原，成功制作了B-ORF6L和PTP-2蛋白兔多克隆抗血清。ApNPV蛋白组分印迹分析表明：B-ORF6L参与包涵体膜及ODV结构组成，是ApNPV结构蛋白；PTP-2不参病毒结构组成。 分子系统发育分析表明，杆状病毒分为4个大的类群，ApNPV属于鳞翅目NPV第Ⅰ类群，与OpMNPV、CfMNPV、CfDefNPV、EppoNPV关系较近，与AcMNPV、RoMNPV、BmNPV关系稍远。

UV-B辐射和CO2浓度倍增对树木幼苗次生代谢的影响

为了揭示UV-B辐射（11.66KJ／m2.d）和CO2浓度倍增复合作用对树木幼苗次生代谢产物变化规律及其对生长发育的影响，在室外用开顶箱，对白桦、红皮云杉和红松幼苗进行了模拟研究。结果表明，三种幼苗针叶片酚类含量增幅和变化趋势均不同。白桦类黄酮含量和305nm吸收值变化不大，红皮云杉和红松后期增加明显。白桦总黄酮和邻苯二酚含量增幅大于红皮云杉和红松。白桦和红松Chl和Car含量呈下降趋势，红皮云杉后期略有增加。白桦休眠侧芽极性小的酚类物质增加明显，根系酚类略有增加，枝条酚类无变化。红松越冬侧芽酚类和邻苯二酚含量增加明显。复合处理使三种幼苗PAL活性增加。酚类物质含量与其清除O-2和OH的能力基本成量效关系。单位多酚清除OH能力，红皮云杉＞红松＞白桦；多酚与蛋白质结合能力，白桦＞红松＞红皮云杉；MDA增幅，红松＞白桦＞红皮云杉。三种幼苗SOD活性后期增加明显。邻苯二酚对Chl、SOD、CAT活性和PSII有破坏作用。白桦酚类物质对SOD和CAT活性有破坏作用。复合处理对高生长抑制的程度白桦大于红松，而对红皮云杉影响不显著，体现UV-B和CO2处理的相互抵消作用。白桦根部生物量增加。红松针叶伸长受到抑制。可见，UV-B和CO2处理诱导的次生产物与幼苗生长发育有关。