Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature

We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.

MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates

First, GaSb epilayers were grown on (001) GaAs substrates by molecular beam epitaxy. We determined that the GaSb layers had very smooth surfaces using atomic force microscopy. Then, very short period InAs/ GaSb superlattices (SLs) were grown on the GaSb buffer layer. The optical and crystalline properties of the superlattices were studied by low-temperature photoluminescence spectra and high resolution transition electron microscopy. In order to determine the interface of SLs, the samples were tested by Raman-scattering spectra at room temperature. Results indicated that the peak wavelength of SLs with clear interfaces and integrated periods is between 2.0 and 2.6 mu m. The SL interface between InAs and GaSb is InSb-like.

Optimization of mechanically induced long-period fibre grating transmission spectrum

A new double-layer grating template is designed to reduce the out-of-band loss as much as 1.8dB when the loss of LP03 reaches 10.2 dB. Meanwhile, we propose a method to remove the sidelobes in the transmission spectra by the adjustment of the thickness of pressure plates. The plate-thickness-induced shift of resonant wavelength and the attenuation of loss peak intensity when removing sidelobes can be modified by the fibre distance and contact point on the pressure plates.

Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field

A systematic investigation is made on the influence of the longitudinal and transverse period distributions of quantum dots on the elastic strain field. The results showed that the effects of the longitudinal period and transverse period on the strain field are just opposite along the direction of center-axis of the quantum dots, and under proper conditions, both effects can be eliminated. The results demonstrate that in calculating the effect of the strain field on the electronic structure, one must take into account the quantum dots period distribution, and it is inadequate to use the isolated quantum dot model in simulating the strain field.

Tuning the resonant wavelength of long period fiber gratings by etching the fiber's cladding

In this paper the resonant wavelength of a long period fiber grating (LPG) is tuned toward longer wavelength by etching the fiber, For LP04 and LP05 cladding modes', the tuning ranges of 23 and 81 nm are achieved, respectively. Also the dependence of the resonant wavelength on the cladding radius of LPG is theoretically simulated. (C) 2001 Elsevier Science B,V. All rights reserved.

Period Continuous Tuning of an Efficient Mid-Infrared Optical Parametric Oscillator Based on a Fan-out Periodically Poled MgO-Doped Lithium Niobate

We report a period continuously tunable, efficient, mid-infrared optical parametric oscillator (OPO) based on a fan-out periodically poled MgO-doped congruent lithium niobate (PPMgLN). The OPO is pumped by a Nd:YAG laser and a maximum idler output average power of 1.65 W at 3.93 mu m is obtained with a pump average power of 10.5 W, corresponding to the conversion efficiency of about 16% from the pump to the idler. The output spectral properties of the OPO with the fan-out crystal are analyzed. The OPO is continuously tuned over 3.78-4.58 mu m (idler) when fan-out periods are changed from 27.0 to 29.4 mu m. Compared with temperature tuning, fan-out period continuous tuning has faster tuning rate and wider tuning range.

黄土高原沟壑区果园还耕对土壤水分的影响

在黄土高原沟壑区王东沟小流域,在塬面、梁地和坡地三种地貌类型上,分别选取了盛果期果园、老果园和退耕还田等3种土地利用与管理方式,测定土壤0~400 cm(塬面0~600 cm)水分含量分布,研究果园的利用管理方式变化对土壤剖面中水分含量变化的影响。结果表明,梁地和坡地上,盛果期果园、老果园土壤水分含量均接近作物凋萎湿度(10%);塬面上,盛果期果园、老果园土壤水分含量为15%。退果4年的耕地、坡地0~400 cm土层土壤储水量显著增加,梁地和塬面虽有增加但与老果园相比,剖面储水量并没有达到显著水平;退果4年耕地、坡地和梁地剖面中的60~140 cm和220~400 cm含水量提高最显著,塬面上220~600 cm土层中水分提高显著。

ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES

We have investigated the Wannier-Stark effect in GaAs/GaAl1-xAs superlattices under electric fields by photocurrent spectroscopy measurements in the range of temperatures 10-300 K. The linewidth of the Oh Stark-ladder exciton was found to increase significantly along with an increase in peak intensity when the electric field increases. We present a mechanism based on an enhanced interface roughness scattering of electronic states due to Wannier-Stark localization in order to explain this increased broadening with electric field. This electric-field-related scattering mechanism will weaken the negative differential conductance effects in superlattices predicted by Esaki and Tsu.