Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P

We introduce a double source electron beam evaporation (DSEBET) technique in this paper. The refractive index coatings were fabricated on K9 glass substrate by adjusting the evaporation rates of two independent sources. The coatings, which were described by atomic force microscopy (AFM), show good compactness and homogeneity. The antireflective (AR) coatings were fabricated on Superluminescent Diodes (SLD) by DSEBET. The hybrid AR coatings on the facets of SLD were prepared in evaporation rates of 0.22nm/s and 0.75nm/s for silicon and silicon dioxide, respectively. The results of AFM and spectral performance of coated SLD show that DSEBET has a promising future in preparing the coatings on optoelectronic devices.

Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures

Tunneling magnetoresistance (TMR) in Ga(0.9)2Mn(0.08)As/Al-O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field vertical bar H vertical bar <= 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 mu A. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3068418]

Fabrication of a novel silica PLC hybrid integrated triplexer

A new-style silica planar lightwave circuit (PLC) hybrid integrated triplexer, which can demultiplex 1490-nm download data and 1550-nm download analog signals, as well as transmit 1310-nm upload data, is presented. It combines SiO2 arrayed waveguide gratings (AWGs) with integrated photodetectors (PDs) and a high performance laser diode (LD). The SiO2 AWGs realize the three-wavelength coarse wavelength-division multiplexing (CWDM). The crosstalk is less than 40 dB between the 1490- and 1550-nm channels, and less than 45 dB between 1310- and 1490- or 1550-nm channels. For the static performances of the integrated triplexer, its upload output power is 0.4 mW, and the download output photo-generated current is 76 A. In the small-signal measurement, the upstream 3-dB bandwidth of the triplexer is 4 GHz, while the downstream 3-dB bandwidths of both the analog and digital sections reach 1.9 GHz.

Organic/inorganic hybrid solar cells based on SnS/SnO nanocrystals and MDMO-PPV

SnS/SnO heterojunction structured nanocrystals with zigzag rod-like connected morphology were prepared by using a simple two-step method. Bulk heterojunction solar cells were fabricated using the SnS/SnO nanocrystals blended with poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene) (MDMO-PPV) as the active layer. Compared with solar cells using SnS nanoparticles hybridized with MDMO-PPV as the active layer, the SnS/SnO devices showed better performance, with a power conversion efficiency higher by about one order in magnitude.

Hybrid numerical methods for exponential models of growth

A series of novel numerical methods for the exponential models of growth are proposed. Based on these methods, hybrid predictor-corrector methods are constructed. The hybrid numerical methods can increase the accuracy and the computing speed obviously, as well as enlarge the stability domain greatly. (c) 2005 Published by Elsevier Inc.

黄土旱塬Hybrid-Maize模型适应性及春玉米生产潜力估算

通过对Hybrid-Maize玉米高产模型进行田间验证,应用该模型对黄土旱塬春玉米生产潜力进行初步估算。结果表明,Hybrid-Maize模型在黄土旱塬表现出较好模拟效果,总生物量、秸秆生物量和籽粒产量模拟值与实测值间具有极显著线性相关性,其决定系数分别为0.9469、0.8164和0.9650,回归系数分别为1.0198、0.9787和1.1844,接近于1。黄土旱塬区多年光温生产潜力和气候生产潜力因品种不同有所差别,对多年平均光温籽粒和总生物量生产潜力,紧凑型玉米品种分别为13.25和22.45t/hm2,平展型玉米品种分别为12.32和20.62t/hm2,年际变化小;对多年平均气候籽粒和总生物量生产潜力,紧凑型玉米品种分别为11.97和19.94t/hm2,平展型玉米品种分别为11.37和18.63t/hm2,年际波动大。在黄土旱塬区,玉米产量潜力挖掘的主要途径应集中在提高密度和水分限制条件下,Hybrid-Maize玉米模型在指导玉米高产栽培上具有较好应用。

A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors

This paper proposes a novel single electron random number generator (RNG). The generator consists of multiple tunneling junctions (MTJ) and a hybrid single electron transistor (SET)/MOS output circuit. It is an oscillator-based RNG. MTJ is used to implement a high-frequency oscillator,which uses the inherent physical randomness in tunneling events of the MTJ to achieve large frequency drift. The hybrid SET and MOS output circuit is used to amplify and buffer the output signal of the MTJ oscillator. The RNG circuit generates high-quality random digital sequences with a simple structure. The operation speed of this circuit is as high as 1GHz. The circuit also has good driven capability and low power dissipation. This novel random number generator is a promising device for future cryptographic systems and communication applications.

A Novel Three-Section Self-Pulsating DFB Laser with Hybrid Grating

A 1.55μm InGaAsP-InP three-section DFB laser with hybrid grating is fabricated and self-pulsations (SP) with frequencies around 20GHz are observed. The mechanism of SP generation in this device is researched. Furthermore, the important role of the phase tuning section on the SP is investigated.

Photonic AND Gate Based on Hybrid Integration of GaAs VCSEL and GaAs MISS

于2010-11-23批量导入

Hybrid CMOS/VCSEL optoelectronic modules

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1x16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 Pin CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.