Structural refinement, optical and electrical properties of Ba1-x Sm-2x/3](Zr0.05Ti0.95)O-3 ceramics

Samarium doped barium zirconate titanate ceramics with general formula Ba1-x Sm-2x/3](Zr0.05Ti0.95)O-3 x = 0, 0.01, 0.02, and 0.03] were prepared by high energy ball milling method. X-ray diffraction patterns and micro-Raman spectroscopy confirmed that these ceramics have a single phase with a tetragonal structure. Rietveld refinement data were employed to model BaO12], SmO12], ZrO6], and TiO6] clusters in the lattice. Scanning electron microscopy shows a reduction in average grain size with the increase of Sm3+ ions into lattice. Temperature-dependent dielectric studies indicate a ferroelectric phase transition and the transition temperature decreases with an increase in Sm3+ ion content. The nature of the transition was investigated by the Curie-Weiss law and it is observed that the diffusivity increases with Sm3+ ion content. The ferroelectric hysteresis loop illustrates that the remnant polarization and coercive field increase with an increase in Sm3+ ions content. Optical properties of the ceramics were studied using ultraviolet-visible diffuse reflectance spectroscopy.

Microstructure Development, Nanomechanical, and Dynamic Compression Properties of Spark Plasma Sintered TiB2-Ti-Based Homogeneous and Bi-layered Composites

The growing threats due to increased use of small-caliber armor piercing projectiles demand the development of new light-weight body armor materials. In this context, TiB2 appears to be a promising ceramic material. However, poor sinterability and low fracture toughness remain two major issues for TiB2. In order to address these issues together, Ti as a sinter-aid is used to develop TiB2-(x wt pct Ti), (x = 10, 20) homogeneous composites and a bi-layered composite (BLC) with each layer having Ti content of 10 and 20 wt pct. The present study uniquely demonstrates the efficacy of two-stage spark plasma sintering route to develop dense TiB2-Ti composites with an excellent combination of nanoscale hardness (similar to 36 GPa) and indentation fracture toughness (similar to 12 MPa m(1/2)). In case of BLC, these properties are not compromised w.r.t. homogeneous composites, suggesting the retention of baseline material properties even in the bi-layer design due to optimal relief of residual stresses. The better indentation toughness of TiB2-(10 wt pct Ti) and TiB2-(20 wt pct Ti) composites can be attributed to the observed crack deflection/arrest, indicating better damage tolerance. Transmission electron microscope investigation reveals the presence of dense dislocation networks and deformation twins in alpha-Ti at the grain boundaries and triple pockets, surrounded by TiB2 grains. The dynamic strength of around 4 GPa has been measured using Split Hopkinson Pressure Bar tests in a reproducible manner at strain rates of the order of 600 s(-1). The damage progression under high strain rate has been investigated by acquiring real time images for the entire test duration using ultra-high speed imaging. An attempt has been made to establish microstructure-property correlation and a simple analysis based on Mohr-Coulomb theory is used to rationalize the measured strength properties.

Quantitative Strain and Compositional Studies of InxGa1-xAs Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniques

In GaAs-based pseudomorphic high-electron mobility transistor device structures, strain and composition of the InxGa1 (-) As-x channel layer are very important as they influence the electronic properties of these devices. In this context, transmission electron microscopy techniques such as (002) dark-field imaging, high-resolution transmission electron microscopy (HRTEM) imaging, scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) imaging and selected area diffraction, are useful. A quantitative comparative study using these techniques is relevant for assessing the merits and limitations of the respective techniques. In this article, we have investigated strain and composition of the InxGa1 (-) As-x layer with the mentioned techniques and compared the results. The HRTEM images were investigated with strain state analysis. The indium content in this layer was quantified by HAADF imaging and correlated with STEM simulations. The studies showed that the InxGa1 (-) As-x channel layer was pseudomorphically grown leading to tetragonal strain along the 001] growth direction and that the average indium content (x) in the epilayer is similar to 0.12. We found consistency in the results obtained using various methods of analysis.

Thermoelectric properties of indium doped PbTe1-ySey alloys

Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe1-ySey alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800 K for the sample with 30% Se content. (C) 2014 AIP Publishing LLC.

Influence of seed layer orientation on the growth and physical properties of SnS nanostructures

Stoichiometric tin (II) sulfide (SnS) nano-structures were synthesized on SnS(010)/glass substrates using a simple and low-temperature chemical solution method, and their physical properties were investigated. The as-synthesized SnS nanostructures exhibited orthorhombic crystal structure and most of the nanocrystals are preferentially oriented along the <010> direction. These nanostructures showed p-type electrical conductivity and high electrical resistivity of 93 Omega cm. SnS nanostructures exhibited a direct optical band gap of 1.43 eV. While increasing the surrounding temperature from 20 to 150 degrees C, the electrical resistivity of the structures decreased and exhibited the activation energy of 0.28 eV.

Thermoelectric properties of Zn doped Cu2SnSe3

Zn doped ternary compounds Cu2ZnxSn1-xSe3 (x = 0, 0.025, 0.05, 0.075) were prepared by solid state synthesis. The undoped compound showed a monoclinic crystal structure as a major phase, while the doped compounds showed a cubic crystal structure confirmed by powder XRD (X-Ray Diffraction). The surface morphology and elemental composition analysis for all the samples were studied by SEM (Scanning Electron Microscopy) and EPMA (Electron Probe Micro Analyzer), respectively. SEM micrographs of the hot pressed samples showed the presence of continuous and homogeneous grains confirming sufficient densification. Elemental composition of all the samples revealed an off-stoichiometry, which was determined by EPMA. Transport properties were measured between 324 K and 773 K. The electrical resistivity decreased up to the samples with Zn content x = 0.05 in Cu2ZnxSn1-xSe3, and slightly increased in the sample Cu2Zn0.075Sn0.925Se3. This behavior is consistent with the changes in the carrier concentration confirmed by room temperature Hall coefficient data. Temperature dependent electrical resistivity of all samples showed heavily doped semiconductor behavior. All the samples exhibit positive Seebeck coefficient (S) and Hall coefficient indicating that the majority of the carriers are holes. A linear increase in Seebeck coefficient with increase in temperature indicates the degenerate semiconductor behavior. The total thermal conductivity of the doped samples increased with a higher amount of doping, due to the increase in the carrier contribution. The total and lattice thermal conductivity of all samples showed 1/1 dependence, which points toward the dominance of phonon scattering at high temperatures. The maximum 1/TZF = 0.48 at 773 K was obtained for the sample Cu2SnSe3 due to a low thermal conductivity compared to the doped samples. (C) 2014 Elsevier B.V. All rights reserved.

Effect of High-Pressure Torsion on Texture, Microstructure, and Raman Spectroscopy: Case Study of Fe- and Te-Substituted CoSb3

Fe0.05Co0.95Sb2.875Te0.125, a double-element-substituted skutterudite, was prepared by induction melting, annealing, and hot pressing (HP). The hot-pressed sample was subjected to high-pressure torsion (HPT) with 4 GPa pressure at 673 K. X-ray diffraction was performed before and after HPT processing of the sample; the skutterudite phase was observed as a main phase, but an additional impurity phase (CoSb2) was observed in the HPT-processed sample. Surface morphology was determined by high-resolution scanning electron microscopy. In the HP sample, coarse grains with sizes in the range of approximately 100 nm to 300 nm were obtained. They changed to fine grains with a reduction in grain size to 75 nm to 125 nm after HPT due to severe plastic deformation. Crystallographic texture, as measured by x-ray diffraction, indicated strengthening of (112), (102) poles and weakening of the (123) pole of the HPT-processed sample. Raman-active vibrational modes showed a peak position shift towards the lower energy side, indicating softening of the modes after HPT. The distortion of the rectangular Sb-Sb rings leads to broadening of Sb-Sb vibrational modes due to local strain fluctuation. In the HPT process, a significant effect on the shorter Sb-Sb bond was observed as compared with the longer Sb-Sb bond.

Grain and the concomitant ferroelectric domain size dependent physical properties of Ba0.85Ca0.15Zr0.1Ti0.9O3 ceramics fabricated using powders derived from oxalate precursor route

Fine powders comprising nanocrystallites of Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) were synthesized via oxalate precursor method, which facilitated to obtain homogenous and large grain sized ceramics at a lower sintering temperature. The compacted powders were sintered at various temperatures in the range of 1200 degrees C-1500 degrees C for an optimized duration of 10 h. Interestingly the one that was sintered at 1450 degrees C/10 h exhibited well resolved Morphotrophic Phase Boundary. The average grain size associated with this sample was 30 mu m accompanied by higher domain density mostly with 90 degrees twinning. These were believed to have significant contribution towards obtaining large strain of about 0.2% and piezoelectric coefficient as high as 563 pC/N. The maximum force that was generated by BCZT ceramic (having 30 mu m grain size) was found to be 161 MPa, which is much higher than that of known actuator materials such as PZT (40MPa) and NKN-5-LT (7 MPa). (C) 2014 AIP Publishing LLC.

Influence of source concentration on structural and optical properties of SnO2 nanoparticles prepared by chemical precipitation method

In present work, a systematic study has been carried out to understand the influence of source concentration on structural and optical properties of the SnO2 nanoparticles. SnO2 nanoparticles have been prepared by using chemical precipitation method at room temperature with aqueous ammonia as a stabilizing agent. X-ray diffraction analysis reveals that SnO2 nanoparticles exhibit tetragonal structure and the particle size is in range of 4.9-7.6 nm. High resolution transmission electron microscopic image shows that all the particles are nearly spherical in nature and particle size lies in range of 4.6-7 nm. Compositional analysis indicates the presence of Sn and O in samples. Blue shift has been observed in optical absorption spectra due to quantum confinement and the bandgap is in range of 4-4.16 eV. The origin of photoluminescence in SnO2 is found to be due to recombination of electrons in singly occupied oxygen vacancies with photo-excited holes in valance band.

Structural and magnetic properties of ultra-small scale eutectic CoFeZr alloys

Aiming to develop high mechanical strength and toughness by tuning ultrafine lamellar spacing of magnetic eutectic alloys, we report the mechanical and magnetic properties of the binary eutectic alloys Co90.5Zr9.5 and Fe90.2Zr9.8, as well as the pseudo-binary eutectic alloys Co82.4Fe8Zr9.6, Co78Fe12.4Zr9.6 and Co49.2Fe49.2Zr9.6 developed by suction-casting. The lower lamellar spacing around 100 nm of the eutectics Co49.2Fe49.2Zr9.6 yields a high hardness of 713(+/- 20) VHN. Magnetic measurements reveal high magnetic moment of 1.92 mu B (at 5 K) and 1.82 mu B (at 300 K) per formula unit for this composition. The magnetization vs. applied field data at 5 K show a directional preference to some extent and therefore smaller non-collinear magnetization behavior compared to Co11Zr2 reported in the literature due to exchange frustration and transverse spin freezing owing to the presence of smaller Zr content. The decay of magnetization as a function of temperature along the easy axis of magnetization of all the eutectic compositions can be described fairly well by the spin wave excitation equation Delta M/M(0) = BT3/2 + CT5/2. (C) 2014 Elsevier B.V. All rights reserved.

Photoluminescence properties of Eu3+-activated CaMoO4 phosphors for WLEDs applications and its Judd-Ofelt analysis

A series of scheelite-type Eu3+-activated CaMoO4 phosphors were synthesized by the nitrate-citrate gel combustion method. All the compounds crystallized in the tetragonal structure with space group I4(1)/a (No. 88). FESEM results reveal the spherical-like morphology. The CaMoO4 phosphor exhibited broad emission centered at 500 nm under the excitation of 298 nm wavelength, while Eu3+-activated CaMoO4 shows an intense characteristic red emission peak at 615 nm at different excitation wavelengths, due to D-5(0) -> F-7(2) transition of Eu3+ ions. The intensities of transitions between different J levels depend on the symmetry of the local environment of Eu3+ ions and were estimated using the Judd-Ofelt analysis. The high asymmetric ratio revealed that Eu3+ occupies sites with a low symmetry and without an inversion center. The CIE chromaticity co-ordinates (x, y) were calculated from emission spectra, and the values were close to the NTSC standard. Therefore, the present phosphor is highly useful for LEDs applications.

Effect of Sm3+ on dielectric and magnetic properties of Y3Fe5O12 nanoparticles

The Sm3+ doped Y3-xSmxFe5O12 (x = 0-3) nanopowders were prepared using modified sol-gel route. The crystalline structure and morphology was confirmed by X-ray diffraction and atomic force microscopy. The nanopowders were sintered at 950 degrees C/90 min using microwave sintering method. The lattice parameters and density of the samples were increased with an increase of Sm3+ concentration. The room temperature dielectric (epsilon' and epsilon `') and magnetic (mu' and mu `') properties were measured in the frequency range up to 20 GHz. The room temperature magnetization studies were carried out using Vibrating sample magnetometer using filed of 1.5 T. Results of VSM show that the saturation and remnant magnetization of Y3-xSmxFe5O12 (0-3) decreases on increasing the Sm concentration (x). The low values of magnetic (mu' and mu `') properties makes them a good candidates for microwave devices, which can be operated in the high frequency range.

Frequency and Temperature-Independent Electrical Transport Properties of 2BaO-0.5Na(2)O-2.5Nb(2)O(5)-4.5B(2)O(3) Glass-Ceramics

The temperature (300-973K) and frequency (100Hz-10MHz) response of the dielectric and impedance characteristics of 2BaO-0.5Na(2)O-2.5Nb(2)O(5)-4.5B(2)O(3) glasses and glass nanocrystal composites were studied. The dielectric constant of the glass was found to be almost independent of frequency (100Hz-10MHz) and temperature (300-600K). The temperature coefficient of dielectric constant was 8 +/- 3ppm/K in the 300-600K temperature range. The relaxation and conduction phenomena were rationalized using modulus formalism and universal AC conductivity exponential power law, respectively. The observed relaxation behavior was found to be thermally activated. The complex impedance data were fitted using the least square method. Dispersion of Barium Sodium Niobate (BNN) phase at nanoscale in a glass matrix resulted in the formation of space charge around crystal-glass interface, leading to a high value of effective dielectric constant especially for the samples heat-treated at higher temperatures. The fabricated glass nanocrystal composites exhibited P versus E hysteresis loops at room temperature and the remnant polarization (P-r) increased with the increase in crystallite size.

Thermoelectric properties of a Mn substituted synthetic tetrahedrite

Tetrahedrite compounds Cu12-xMnxSb4S13 (0 <= x <= 1.8) were prepared by solid state synthesis. A detailed crystal structure analysis of Cu10.6Mn1.4Sb4S13 was performed by single crystal X-ray diffraction (XRD) at 100, 200 and 300 K confirming the noncentrosymmetric structure (space group I (4) over bar 3m) of a tetrahedrite. The large atomic displacement parameter of the Cu2 atoms was described by splitting the 12e site into a partially and randomly occupied 24g site (Cu22) in addition to the regular 12e site (Cu21), suggesting a mix of dynamic and static off-plane Cu2 atom disorder. Rietveld powder XRD pattern and electron probe microanalysis revealed that all the Mn substituted samples showed a single tetrahedrite phase. The electrical resistivity increased with increasing Mn due to substitution of Mn2+ at the Cu1+ site. The positive Seebeck coefficient for all samples indicates that the dominant carriers are holes. Even though the thermal conductivity decreased as a function of increasing Mn, the thermoelectric figure of merit ZT decreased, because the decrease of the power factor is stronger than the decrease of the thermal conductivity. The maximum ZT = 0.76 at 623 K is obtained for Cu12Sb4S13. The coefficient of thermal expansion 13.5 +/- 0.1 x 10(-6) K-1 is obtained in the temperature range from 460 K to 670 K for Cu10.2Mn1.8Sb4S13. The Debye temperature, Theta(D) = 244 K for Cu10.2Mn1.8Sb4S13, was estimated from an evaluation of the elastic properties. The effective paramagnetic moment 7.45 mu(B)/f.u. for Cu10.2Mn1.8Sb4S13 is fairly consistent with a high spin 3d(5) ground state of Mn.

Structural, Magnetic, and Electrical Properties of Microwave-Sintered Cr3+-Doped Sr Hexaferrites

SrCrxFe12-xO19 (x = 0.0, 0.1, 0.3, 0.5, 0.7, 0.9) hexaferrites were prepared by a microwave-hydrothermal method and subsequently sintered at 950 degrees C for 90 min using the microwave sintering method. The results show that, with increasing Cr3+ content, the lattice parameters changed anisotropically. The average grain sizes of sintered samples were in the range of 280 nm to 660 nm. The saturation magnetization systematically decreased with increasing Cr3+ doping, but the coercivity values increased. The electrical resistivity (log rho) decreased linearly with increasing temperature up to a certain temperature known as the transition temperature (T-c), and T-c decreased with further increase (x>0.5) of the Cr3+ content. This decrease in log rho and the activation energy (E-g) is due to electron hopping and occupancy of doped ions at different lattice sites. We found that the dielectric constant and dielectric loss for all the samples decreased with the Cr3+ content. The structural, magnetic, and electrical properties of Cr3+-doped SrFe12O19 hexaferrites have thus been investigated.