Rooting of healthy and CVC-affected 'Valência' sweet orange stem cuttings, through the use of plant regulators

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Plant growth regulators on the pre-harvest period of 'Pêra' oranges

Neste estudo, avaliou-se os efeitos de auxinas e giberelinas, combinados e aplicados em pré-colheita na qualidade interna de frutos de laranjeira Pêra. Citrus sinensis Osbeck cultivar Pêra foram pulverizadas com três aplicações, em intervalos de 45 dias, com os seguintes tratamentos: GA3 + 2,4-D a 12,5mg L-1 de cada; GA3 + 2,4-D 25mg L-1; GA3 + 2,4-D 37,5mg L-1; GA3 + NAA 12,5mg L-1;GA3 + NAA 25mg L-1; GA3 + NAA 37,5mg L-1; NAA + 2,4-D 12,5mg L-1; NAA+2,4-D 25mg L-1; NAA+2,4-D 37,5mg L-1 e testemunha (água). Os resultados mostraram que os tratamentos não prejudicaram a qualidade interna dos frutos. Além disso, os níveis de resíduo de reguladores vegetais no suco, ficaram abaixo de 0,05mg L-1, 110 dias após a última aplicação.

Yield and Composition of the Essential Oil of Basil on Plant Growth Regulators Application

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Voltage-composition profile and synchrotron X-ray structural analysis of low and high temperature LixCoO2 host material

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of plant growth regulators in the rooting of Pinus cuttings

O trabalho avaliou o enraizamento de estacas de Pinus caribaea var. hondurensis Morelet sob a ação de diferentes níveis de reguladores vegetais. As estacas foram feitas de brotações de 4 a 6cm de comprimento de mudas de P. caribaea var. hondurensis Morelet com corte bisel na base sendo as acículas basais eliminadas. A base das estacas foram submetidas aos tratamentos por 2 segundos com os seguintes tratamentos: 1- NAA 2000mg L-1; 2- NAA 4000mg L-1; 3- NAA 6000mg L-1; 4- NAA 2000mg L-1 + PBZ 100mg L-1; 5- NAA 4000mg L-1 + PBZ; 6- NAA 6000mg L-1 + PBZ; 7- IBA 2000mg L-1; 8- IBA 4000mg L-1; 9- IBA 6000mg L-1; 10-IBA 2000mg L-1 + PBZ; 11- IBA 4000mg L-1 + PBZ; 12- IBA 6000mg L-1 + PBZ e testemunha. Após os tratamentos as estacas foram plantadas em tubetes contendo 50% de palha de arroz carbonizada e 50% de vermiculita. As avaliações realizadas aos 60 dias após o plantio mostraram que estacas de P. caribaea tratadas com IBA levaram a maior porcentagem de estacas enraizadas que aquelas tratadas com NAA, sendo o mais efetivo, IBA a 4000mg L-1 em conjunto com 100mg L-1 de paclobutrazol.

Note on the germination of Vochysia tucanorum seeds treated with growth regulators

(Nota sobre a germinação de sementes de Vochysia tucanorum tratadas com reguladores vegetais). O objetivo deste trabalho foi avaliar a resposta germinativa sob luz branca e escuro de sementes de Vochysia tucanorum Mart. tratadas com GA3 e CEPA. Sementes recém-coletadas de uma área de Cerrado foram armazenadas durante 14 dias em duas temperaturas (25 ± 2 °C e 7 ± 1 °C). Após o período de armazenamento, as sementes foram pré-tratadas com água destilada (controle), ácido giberélico (GA3), ácido 2-cloroetilfosfônico (CEPA) e uma mistura de GA3 + CEPA; em seguida, as sementes foram semeadas em placas de Petri sobre papel filtro umedecido com água destilada e colocadas para germinar em escuro e sob luz branca. Os resultados sugerem que as sementes não são fotoblásticas nem dormentes, no entanto um comportamento fotoblástico emerge quando as sementes foram previamente armazenadas em baixa temperatura e embebidas em soluções de GA3 e CEPA. em geral, não houve diferença entre as temperaturas de armazenamento de 7 °C e 25 °C. A germinação sob luz branca de sementes pré-tratadas com CEPA + GA3 e CEPA foi antecipada, em comparação com o controle de água destilada, sendo que o efeito da mistura CEPA + GA3 foi mais pronunciado do que o de CEPA sozinho. Assim, a taxa de germinação de sementes de V. tucanorum, sob luz branca, pode ser melhorada pela embebição das mesmas em soluções de CEPA ou de CEPA + GA3.

Low-voltage varistor based on (Sn,Ti)O-2 ceramics

A description is given of the nonohmic behavior obtained in (SnxTi1-x)O-2-based systems. A matrix founded on (SnxTi1-x)O-2-based systems doped with Nb2O5 leads to a low-voltage varistor system with nonlinear coefficient values of similar to9. The presence of the back-to-back Schottky-type barrier is observed based on the voltage dependence of the capacitance. When doped with CoO, the (SnxTi1-x)O(2)(.)based system presents higher nonlinear coefficient values (>30) than does the SnO2-based varistor system.

BARRIER VOLTAGE DEFORMATION OF ZNO VARISTORS BY CURRENT PULSE

The phenomenon of electrical degradation in ZnO varistors was studied by application of high-intensity current pulses. A wave shape of 8 X 20-mu-s and rectangular waves of 1 and 2 ms were used. The degradation was estimated by reference electric-field variation and by Schottky voltage barrier deformation. The results showed that current pulses reduce both the height and the width of the barrier voltage. It was also observed that the donor density N(d) did not change but the surface states density N(s) decreased with degradation.

A low-voltage low-power analog memory cell with built-in 4-quadrant multiplication

An accurate switched-current (SI) memory cell and suitable for low-voltage low-power (LVLP) applications is proposed. Information is memorized as the gate-voltage of the input transistor, in a tunable gain-boosting triode-transconductor. Additionally, four-quadrant multiplication between the input voltage to the transconductor regulation-amplifier (X-operand) and the stored voltage (Y-operand) is provided. A simplified 2 x 2-memory array was prototyped according to a standard 0.8 mum n-well CMOS process and 1.8-V supply. Measured current-reproduction error is less than 0.26% for 0.25 muA less than or equal to I-SAMPLE less than or equal to 0.75 muA. Standby consumption is 6.75 muW per cell @I-SAMPLE = 0.75 muA. At room temperature, leakage-rate is 1.56 nA/ms. Four-quadrant multiplier (4QM) full-scale operands are 2x(max) = 320 mV(pp) and 2y(max). = 448 mV(pp), yielding a maximum output swing of 0.9 muA(pp). 4QM worst-case nonlinearity is 7.9%.

Generalization of the delta-differential autotransformer for 12 and 18-pulse converters

This work proposes a methodology to generalize the A-connections for 12 and 18-pulse autotransformers. A single mathematical expression, obtained through simple trigonometric operations, represents all the connections. The proposed methodology allows choosing any ratio between the input and the output voltages. The converters can operate either as step-up or as step-down voltage. To simplify the design of the windings, graphics are generated to calculate the turn-ratio and the polarity of each secondary winding, with respect to the primary winding. A design example, followed by digital simulations, and experimental results illustrate the presented steps. The results also show that high power factor is an inherent characteristic of multi-pulse converters, without any active or passive power factor pre-regulators needs.

ANALYTIC STUDY ON HIGH-VOLTAGE CROWBAR SYSTEM

Crowbar switches are largely used in plasma devices, such as field-reversed configuration (FRC) machines and tokamaks, to avoid energy return from the discharge coil to the capacitor bank. A method of identification of all resistances, inductances and currents involved in capacitor bank discharges using a crowbar is proposed based on the derivation of the general analytical form of the coil current. This analysis can also be used for optimization of the discharge, reducing the ripple amplitude inherent in the crowbar-switched current. Fitting results of the TC-1 UNICAMP FRC device are also presented in this work.

A low-voltage wide-swing programmable-gain current amplifier

A CMOS low-voltage, wide-swing continuous-time current amplifier is presented. Exhibiting an open-loop architecture, the circuit is composed of transresistance and transconductance stages built upon triode-operating transistors. In addition to an extended dynamic range, the current gain can be programmed within good accuracy by a rapport involving only transistor geometries and tuning biases. Low temperature-drift on gain setting is then expected.In accordance with a 0.35 mum n-well CMOS fabrication process and a single 1.1 V-supply, a balanced current-amplifier is designed for a programmable gain-range of 6 - 34 dB and optimized with respect to dynamic range. Simulated results from PSPICE and Bsim3v3 models indicate, for a 100 muA(pp)-output current, a THD of 0.96 and 1.87% at 1 KHz and 100 KHz, respectively. Input noise is 120 pArootHz @ 10 Hz, with S/N = 63.2 dB @ 1%-THD. At maximum gain, total quiescent consumption is 334 muW. Measurements from a prototyped amplifier reveal a gain-interval of 4.8-33.1 dB and a maximum current swing of 120 muA(pp). The current-amplifier bandwidth is above 1 MHz.

Effect of combined bending strain and thermal cycling on the voltage-current characteristic curves of Bi-2223 tapes

High critical temperature superconductors are evolving from a scientific research subject into large-scale application devices. In order to meet this development demand they must withstand high current capacity under mechanical loads arising from thermal contraction during cooling from room temperature down to operating temperature (usually 77 K) and due to the electromagnetic forces generated by the current and the induced magnetic field. Among the HTS materials, the Bi2Sr2Ca2Cu3Ox, compound imbedded in an Ag/AgMg sheath has shown the best results in terms of critical current at 77 K and tolerance against mechanical strain. Aiming to evaluate the influence of thermal stress induced by a number of thermal shock cycles we have evaluated the V-I characteristic curves of samples mounted onto semicircular holders with different curvature radius (9.75 to 44.5 mm). The most deformed sample (epsilon = 1.08%) showed the largest reduction of critical current (40%) compared to the undeformed sample and the highest sensitivity to thermal stress (I-c/I-c0 = 0.5). The V-I characteristic curves were also fitted by a potential curve displaying n-exponents varying from 20 down to 10 between the initial and last thermal shock cycle.

PROCESSING AND CHARACTERIZATION OF LOW-VOLTAGE VARISTORS

ZnO seed particles and Cr2O3 were used in this study to control the microstructure of ZnO varistors. The seed particles were prepared by adding 1.0 mol % BaO to ZnO. The powder was then calcined at 800-degrees-C for 2 h, pressed into pellets and sintered at 1400-degrees-C for 8 h. The sintered ZnO was ground and the BaO eliminated by washing in water. The remaining ZnO powder was classified into a size fraction ranging from 38 to 149 mum. The addition of a small amount (1 weight %) ZnO seed grains produces varistors with low breakdown voltages (7.6 V/mm) and an alpha coefficient of approximately 10. The addition of Cr2O3 stabilizes the spinel phase yielding a more homogeneous microstructure, but degraded electrical behaviour of the ZnO varistor.