A coupled hydro-mechanical analysis for prediction of hydraulic fracture propagation in saturated porous media using EFG mesh-less method

The details of the Element Free Galerkin (EFG) method are presented with the method being applied to a study on hydraulic fracturing initiation and propagation process in a saturated porous medium using coupled hydro-mechanical numerical modelling. In this EFG method, interpolation (approximation) is based on nodes without using elements and hence an arbitrary discrete fracture path can be modelled.The numerical approach is based upon solving two governing partial differential equations of equilibrium and continuity of pore water simultaneously. Displacement increment and pore water pressure increment are discretized using the same EFG shape functions. An incremental constrained Galerkin weak form is used to create the discrete system of equations and a fully implicit scheme is used for discretization in the time domain. Implementation of essential boundary conditions is based on the penalty method. In order to model discrete fractures, the so-called diffraction method is used.Examples are presented and the results are compared to some closed-form solutions and FEM approximations in order to demonstrate the validity of the developed model and its capabilities. The model is able to take the anisotropy and inhomogeneity of the material into account. The applicability of the model is examined by simulating hydraulic fracture initiation and propagation process from a borehole by injection of fluid. The maximum tensile strength criterion and Mohr-Coulomb shear criterion are used for modelling tensile and shear fracture, respectively. The model successfully simulates the leak-off of fluid from the fracture into the surrounding material. The results indicate the importance of pore fluid pressure in the initiation and propagation pattern of fracture in saturated soils. © 2013 Elsevier Ltd.

Cabaret finite-difference schemes for the one-dimensional Euler equations

In the present paper we consider second order compact upwind schemes with a space split time derivative (CABARET) applied to one-dimensional compressible gas flows. As opposed to the conventional approach associated with incorporating adjacent space cells we use information from adjacent time layer to improve the solution accuracy. Taking the first order Roe scheme as the basis we develop a few higher (i.e. second within regions of smooth solutions) order accurate difference schemes. One of them (CABARET3) is formulated in a two-time-layer form, which makes it most simple and robust. Supersonic and subsonic shock-tube tests are used to compare the new schemes with several well-known second-order TVD schemes. In particular, it is shown that CABARET3 is notably more accurate than the standard second-order Roe scheme with MUSCL flux splitting.

Predictive control for spacecraft rendezvous in an elliptical orbit using an FPGA

A field programmable gate array (FPGA)-based predictive controller for a spacecraft rendezvous manoeuvre is presented. A linear time varying prediction model is used to accommodate elliptical orbits, and a variable prediction horizon is used to facilitate finite time completion of manoeuvres. The resulting constrained optimisation problems are solved using a primal dual interior point algorithm. The majority of the computational demand is in solving a set of linear equations at each iteration of this algorithm. To accelerate this operation, a custom circuit is implemented, using a combination of Mathworks HDL Coder and Xilinx System Generator for DSP, and used as a peripheral to a MicroBlaze soft core processor. The system is demonstrated in closed loop by linking the FPGA with a simulation of the plant dynamics running in Simulink on a PC, using Ethernet. © 2013 EUCA.

Generalized phenomenological model for the viscoelasticity of idealized asphalts

A generalized theory for the viscoelastic behavior of idealized bituminous mixtures (asphalts) is presented. The mathematical model incorporates strain rate and temperature dependency as well as nonmonotonic loading and unloading with shape recovery. The stiffening effect of the aggregate is included. The model is of phenomenological nature. It can be calibrated using a relatively limited set of experimental parameters, obtainable by uniaxial tests. It is shown that the mathematical model can be represented as a special nonlinear form of the Burgers model. This facilitates the derivation of numerical algorithms for solving the constitutive equations. A numerical scheme is implemented in a user material subroutine (UMAT) in the finite-element analysis (FEA) code ABAQUS. Simulation results are compared with uniaxial and indentation tests on an idealized asphalt mix. © 2014 American Society of Civil Engineers.

Field programmable gate array based predictive control system for spacecraft rendezvous in elliptical orbits

Copyright © 2014 John Wiley & Sons, Ltd. Copyright © 2014 John Wiley & Sons, Ltd. Summary A field programmable gate array (FPGA) based model predictive controller for two phases of spacecraft rendezvous is presented. Linear time-varying prediction models are used to accommodate elliptical orbits, and a variable prediction horizon is used to facilitate finite time completion of the longer range manoeuvres, whilst a fixed and receding prediction horizon is used for fine-grained tracking at close range. The resulting constrained optimisation problems are solved using a primal-dual interior point algorithm. The majority of the computational demand is in solving a system of simultaneous linear equations at each iteration of this algorithm. To accelerate these operations, a custom circuit is implemented, using a combination of Mathworks HDL Coder and Xilinx System Generator for DSP, and used as a peripheral to a MicroBlaze soft-core processor on the FPGA, on which the remainder of the system is implemented. Certain logic that can be hard-coded for fixed sized problems is implemented to be configurable online, in order to accommodate the varying problem sizes associated with the variable prediction horizon. The system is demonstrated in closed-loop by linking the FPGA with a simulation of the spacecraft dynamics running in Simulink on a PC, using Ethernet. Timing comparisons indicate that the custom implementation is substantially faster than pure embedded software-based interior point methods running on the same MicroBlaze and could be competitive with a pure custom hardware implementation.

Unified form language: A domain-specific language for weak formulations of partial differential equations

We present the Unified Form Language (UFL), which is a domain-specific language for representing weak formulations of partial differential equations with a view to numerical approximation. Features of UFL include support for variational forms and functionals, automatic differentiation of forms and expressions, arbitrary function space hierarchies formultifield problems, general differential operators and flexible tensor algebra. With these features, UFL has been used to effortlessly express finite element methods for complex systems of partial differential equations in near-mathematical notation, resulting in compact, intuitive and readable programs. We present in this work the language and its construction. An implementation of UFL is freely available as an open-source software library. The library generates abstract syntax tree representations of variational problems, which are used by other software libraries to generate concrete low-level implementations. Some application examples are presented and libraries that support UFL are highlighted. © 2014 ACM.

Choice of calibration equations in calibrating microwave test fixtures

The error theory of linear equation system has been applied to the calibration procedure of microwave network analyser in this article. A new explanation for the choice of the linear calibration equations is proposed and a general principle for choosing calibration equations is presented. The method can also be used to predict the occurrence of the problem of frequency limitation at some periodic frequencies. This principle is employed to the thru-short-delay (TSD) method and the solution using the chosen equations gives the most accurate results. A good agreement between the theory and the experiment has been obtained.

The influence of Schottky contact metals on the strain of AlGaN barrier layers

Ir and Ni Schottky contacts on strained Al0.25Ga0.75N/GaN heterostructures, and the Ni Schottky contact with different areas on strained Al0.3Ga0.7N/GaN heterostructures have been prepared. Using the measured capacitance-voltage curves and the current-voltage curves obtained from the prepared Schottky contacts, the polarization charge densities of the AlGaN barrier layer for the Schottky contacts were analyzed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is found that the polarization charge density of the AlGaN barrier layer for the Ir Schottky contact on strained Al0.25Ga0.75N/GaN heterostructures is different from that of the Ni Schottky contact, and the polarization charge densities of the AlGaN barrier layer for Ni Schottky contacts with different areas on strained Al0.3Ga0.7N/GaN heterostructures are different corresponding to different Ni Schottky contact areas. As a result, the conclusion can be made that Schottky contact metals on strained AlGaN/GaN heterostructures have an influence on the strain of the AlGaN barrier layer. (C) 2008 American Institute of Physics.

Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures

Using the measured capacitance-voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to - 3 V, the value of the relative permittivity decreases from 7.184 to 7.093.

Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure

The theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of an AlxGa1-xN/GaN heterostructure is calculated. The accurate wave functions and electron distributions of the three lowest subbands for a typical structure are obtained by solving the Schrodinger and Poisson equations self-consistently. Based on the model of treating dislocation as a charged line, a simple scattering potential, a square-well potential, is utilized. The estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data. It is also found that the dislocation scattering dominates both the low- and moderate-temperature mobilities and accounts for the nearly flattening-out behavior with increasing temperature. To clarify the role of dislocation scattering all standard scattering mechanisms are included in the calculation.

Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure

The subband structure and inter-subband transition as a function of gate voltage are determined by solving the Schrodinger and Poisson equations self-consistently in an AlxGa1-xN/GaN heterostructure. Different aluminum mole fraction and thickness of AlxGa1-xN barrier are considered. Calculation results show that energy difference between the first and second subband covers a wide range (from several tens to hundreds milli-electron volt) by applying different gate voltage, which corresponds to the midinfrared and long-wave infrared wavelength scope. Furthermore, such a modulation on the subband transition energy is much more pronounced for the structure with thin barrier. When the applied positive gate voltage is increased, the triangle well formed at the interface turns to be deeper and narrower, which enhances the confinement for electrons. As a result, the overlap between electron wave function at two subbands increases, and thus the optical intersubband transition also enhances its intensity. This tendency is in good agreement with the available data in the literature. (c) 2005 Elsevier B.V. All rights reserved.

Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well

A self-consistent solution of conduction band profile and subband energies for AlxGa1-xN-GaN quantum well is presented by solving the Schrodinger and Poisson equations. A new method is introduced to deal with the accumulation of the immobile charges at the AlxGa1-xN-GaN interface caused by spontaneous and piezoelectric polarization in the process of solving the Poisson equation. The effect of spontaneous and piezoelectric polarization is taken into account in the calculation. It also includes the effect of exchange-correlation to the one electron potential on the Coulomb interaction. Our analysis is based on the one electron effective-mass approximation and charge conservation condition. Based on this model, the electron wave functions and the conduction band structure are derived. We calculate the intersubband transition wavelength lambda(21) for different Al molar fraction of barrier and thickness of well. The calculated result can fit to the experimental data well. The dependence of the absorption coefficient a on the well width and the doping density is also investigated theoretically. (C) 2004 American Vacuum Society.

Dynamics of quantum dissipation systems interacting with fermion and boson grand canonical bath ensembles: Hierarchical equations of motion approach

A hierarchical equations of motion formalism for a quantum dissipation system in a grand canonical bath ensemble surrounding is constructed on the basis of the calculus-on-path-integral algorithm, together with the parametrization of arbitrary non-Markovian bath that satisfies fluctuation-dissipation theorem. The influence functionals for both the fermion or boson bath interaction are found to be of the same path integral expression as the canonical bath, assuming they all satisfy the Gaussian statistics. However, the equation of motion formalism is different due to the fluctuation-dissipation theories that are distinct and used explicitly. The implications of the present work to quantum transport through molecular wires and electron transfer in complex molecular systems are discussed. (c) 2007 American Institute of Physics.

A 16-term error model based on linear equations of voltage and current variables

Formulation of a 16-term error model, based on the four-port ABCD-matrix and voltage and current variables, is outlined. Matrices A, B, C, and D are each 2 x 2 submatrices of the complete 4 x 4 error matrix. The corresponding equations are linear in terms of the error parameters, which simplifies the calibration process. The parallelism with the network analyzer calibration procedures and the requirement of five two-port calibration measurements are stressed. Principles for robust choice of equations are presented. While the formulation is suitable for any network analyzer measurement, it is expected to be a useful alternative for the nonlinear y-parameter approach used in intrinsic semiconductor electrical and noise parameter measurements and parasitics' deembedding.

Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations

Semiconductor microlasers with an equilateral triangle resonator (ETR) are analyzed by rate equations with the mode lifetimes calculated by the finite-difference time-domain technique and the Pade approximation. A gain spectrum based on the relation of the gain spectrum and the spontaneous emission spectrum is proposed for considering the mode selection in a wide wavelength span. For an ETR microlaser with the side length of about 5 mum, we find that single fundamental mode operation at about 1.55 mum can be obtained as the side length increases from 4.75 to 5.05 mum. The corresponding wavelength tuning range is 93 nm, and the threshold current is about 0.1 to 0.4 mA.