Poole-Frenkel effect in amorphous poly(p-phenylene sulfide)

The conductivity of poly(p-phenylene sulfide) (PPS) amorphous samples sandwiched between metallic electrodes has been studied as a function of applied voltage, temperature, and electrode material. The voltage (U) dependence of the currents for electric fields within the range 10(3)-10(6) V/cm exhibits exp beta U-1/2 behavior with beta = beta(Schottky) below the glass transition temperature (T-g congruent to 90 degrees C), and beta = beta(Poole-Frenkel) above T-g. Coordinated temperature measurements of de currents with different metallic contacts and thermally stimulated currents (TSC) indicate, however, that the conductivity at T < T-g is consistent with the so-called ''anomalous'' Poole-Frenkel effect rather than the Schottky effect. Consequently, the p-type conductivity in amorphous PPS is proposed to be a bulk-limited process due to ionization of two different types of acceptor centers in the presence of neutral hole traps. (C) 1996 John Wiley & Sons, Inc.

Effect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistor

The effect of La2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01 CoO + 0.0005 Nb2O5 + x La2O5 system, where x = 0.0005 or 0.00075, was considered in this study. The samples were sintered at 1300 degreesC for 2 and 4 h and a single SnO2 phase was identified by X-ray diffraction. Microstructure analysis by scanning electron microscopy showed that the affect of La2O3 addition is to decrease the SnO2 grain size. J versus E curves indicated that the system exhibits a varistor behavior and the effect of La2O3 is to increase both the non-linear coefficient (alpha) and the breakdown voltage (E-2). Considering the Schottky thermionic emission model the potential height and the width were estimated. The addition of small amounts of La2O3 to the basic system increases the potential barrier height and decreases both grain size and potential barrier width. (C) 2001 Kluwer Academic Publishers.

Characterization of BaTi1-xZrxO3 thin films obtained by a soft chemical spin-coating technique

Single-phase perovskite structure BaZrxTi1-xO3 (BZT) (0.05less than or equal toxless than or equal to0.25) thin films were deposited on Pt-Ti-SiO2-Si substrates by the spin-coating technique. The structural modifications in the thin films were studied using x-ray diffraction and micro-Raman scattering techniques. Lattice parameters calculated from x-ray data indicate an increase in lattice (a axis) with the increasing content of zirconium in these films. Such Zr substitution also result in variations of the phonon mode wave numbers, especially those of lower wave numbers, for BaZrxTi1-xO3 thin films, corroborate to the structural change caused by the zirconium doping. on the other hand, Raman modes persist above structural phase transition, although all optical modes should be Raman inactive in the cubic phase. The origin of these modes must be interpreted as a function of a local breakdown of the cubic symmetry, which could be a result of some kind of disorder. The BZT thin films exhibited a satisfactory dielectric constant close to 181-138, and low dielectric loss tan delta<0.03 at the frequency of 1 kHz. The leakage current density of the BZT thin films was studied at elevated temperatures and the data obey the Schottky emission model. Through this analysis the Schottky barrier height values 0.68, 1.39, and 1.24 eV were estimated to the BZT5, BZT15, and BZT25 thin films, respectively. (C) 2004 American Institute of Physics.

Admittance and dielectric spectroscopy of polycrystalline semiconductors

This text discusses about advantageous, powerful and limitations of admittance and dielectric spectroscopy in the characterization of polycrystalline semiconductors. In the context of polycrystalline semiconductors or dielectric materials, the admittance or dielectric frequency response analyses are shown to be sometimes more useful than impedance spectra analysis, mainly because information on the capacitances or deep trap states are possible to be monitored from admittance or dielectric spectra as a function of dopant concentration or annealing effects. The majority of examples of the application of admittance or dielectric analysis approach were here based on SnO2- and ZnO-based polycrystalline semiconductors devices presenting nonohmic properties. Examples of how to perform the characterization of Schottky barrier in such devices are clearly depicted. The approach is based on findings of the true Mott-Schottky pattern of the barrier by extracting the grain boundary capacitance value from complex capacitance diagram analysis. The equivalent circuit of such kind of devices is mainly consistent with the existence of three parallel elements: the high-frequency limit related to grain boundary capacitances, the complex incremental capacitance at intermediate frequency related to the deep trap relaxation and finally at low frequency region the manifestation of the conductance term representing the dc conductance of the multi-junction device. (c) 2007 Elsevier Ltd. All rights reserved.

Effect of Ta2O5 doping on the electrical properties of 0.99SnO(2)center dot 0.01CoO ceramic

The effect of Ta2O5 doping in 0.99SnO(2). 0.01CoO on the microstructure and electrical properties of this ceramic were analyzed in this study. The grain size was found to decrease from 6.87 mu m to 5.68 mu m when the Ta2O5 concentration increased from 0.050 to 0.075 mol%. DC electrical characterization showed a dramatic increase in the current loss and decrease in the non-linear coefficient with the increase of the Ta2O5 concentration. The conduction mechanism is by thermionic emission and the potential barriers are of Schottky type, separated by a thin film. (C) 2000 Kluwer Academic Publishers.

Effect of Fe2O3 doping on the electrical properties of a SnO2 based varistor

The effect of Fe2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01CoO + 0.005Nb(2)O(5) + xFe(2)O(3) system, where x = 0.005 or 0.01, was considered in this study. The samples were sintered at 1300degreesC for 2 h. Microstructure analysis by scanning electron microscopy showed that the effect of Fe2O3 addition is to decrease the SnO2 grain size. J x E curves indicated that the system exhibit a varistor behavior and the effect of Fe2O3 is to increase both, the non-linear coefficient (alpha) and the breakdown voltage (E-r). Considering the Schottky thermionic emission model the potential height and width were estimated. Small amount addition of Fe2O3 to the basic system increases both the potential barrier height and width. (C) 2002 Kluwer Academic Publishers.

Structure of a glycoglucuronomannan from the low-viscosity gum of Vochysia lehmannii

The polysaccharide (VSP) from the gum exudate of quaruba (Vochysia lehmannii) had two components of almost identical M. centred at 24,800, as shown by HSPEC-MALLS. The presence of aggregates was shown since carboxy-reduction gave VSP-RED, which contained low molecular weight components with M-w 19,000 > 5800 and polydispersity ratios dn/dc 0.160 and 0.149, respectively. VSP formed low viscosity aqueous solutions and acid hydrolysis gave Man (30%), Ara (16%), Gal (10%), and Glc (14%). The latter arose partly from GlcA (30%). Methylation analysis revealed mainly neutral units of 2-O- (60%) and 2,3-di-O-substituted Manp (5%), and those of nomeducing ends (8%), 2-O- (3%), and 4-O-substituted Arap and/or 5-O-substituted Araf units (6%). VSP-RED contained Glc (45%), Man (35%), and Ara (13%) and methylation analysis indicated mainly 4-O-substituted Glcp (31%) and 2-O- (51%) and 2,3-di-O-substituted Manp units (5%). A predominant alternating structure for VSP was shown by its C-13 NMR spectrum, which contained 10 main signals and a small one of C-6 of GlcpA. This was confirmed by formation, on partial hydrolysis of VSP, of a tetrasaccharide, which was characterised by NMR spectroscopy and ESI-MS as beta-GlcpA-(1 --> 2)-alpha-Manp-(1 --> 4)-beta-GlcpA-(1 --> 2)-Man, which arose from the main chain, thus confirming VSP to be a glycoglucuronomannan. (C) 2004 Elsevier Ltd. All rights reserved.

The influence of sintering process and atmosphere on the non-ohmic properties of SnO2 based varistor

The non-ohmic properties of the 98.95% SnO2 + 1.0 CoO + 0.05 Nb2O5 (all in mole%) system, as well as the influence of sintering temperature and atmosphere on these properties, were characterized in this study. The maximum non-linear coefficient (alpha = 32) was obtained for a sintering temperature of 1300 degrees C in an oxygen atmosphere and this maximum is associated with the presence of O in SnO2 grain boundaries, as interface defects. Experimental results also indicate thermionic-type conduction mechanisms, which are associated with the potential barrier of Schottky or Poole-Frenkel types.

Poole-Frenkel effect in Er doped SnO2 thin films deposited by sol-gel-dip-coating

Electrical properties of Er-doped SnO2 thin films obtained by sol-gel-dip-coating technique were measured. When compared to undoped tin dioxide, rare-earth doped films present much higher resistivity, indicating that Er3+ presents an acceptor-like character into the matrix, which leads to a high degree of electric charge compensation. Current-voltage characteristics, measured above room temperature for Er-doped films, lead to non-linear behavior and two conduction regimes. In the lower electric field range the conduction is dominated by Schottky emission over the grain boundary potential barrier, which presents an average value of 0.85 eV. Increasing the applied bias, a second regime of conduction is observed, since the Poole-Frenkel coulombic barrier lowering becomes a significant effect. The obtained activation energy for ionization is 0.67 eV. (C) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical conduction mechanism and phase transition studies using dielectric properties and Raman spectroscopy in ferroelectric Pb0.76Ca0.24TiO3 thin films

We have studied the phase transition behavior of Pb0.76Ca0.24TiO3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb0.76Ca0.24TiO3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. on the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV. (C) 2003 American Institute of Physics.

Tolerance to copper and zinc of Acidithiobacillus thiooxidans isolated from sewage sludge

The effect of copper and zinc ions on sulphur oxidation by Acidithiobacillus thiooxidans, strain SFR01, isolated from anaerobic sewage sludge was assessed, resulting in tolerance levels up to 20 and 200 mmol l(-1) for copper and zinc, respectively. The tolerance levels obtained were higher than the concentration of copper and zinc usually found in the collected sewage sludge. The tolerance levels obtained indicate no constraints for sludge bioleaching of those metals due to their toxicities to the indigenous A. thiooxidans.

Separation of dielectric and space charge polarizations in CaCu3Ti4O12/CaTiO3 composite polycrystalline systems

The complex analysis of dielectric/capacitance is a very useful approach to separate different polarization contributions existing in polycrystalline ceramics. In this letter, the authors use this type of spectroscopic analysis to separate the bulk's dielectric dipolar relaxation contributions from the polarization contribution due to space charge in the grain boundaries of a CaCu3Ti4O12/CaTiO3 polycrystalline composite system. The bulk dielectric dipolar relaxation was attributed to the self-intertwined domain structures from the CaCu3Ti4O12 phase coupled to the dipole relaxation from the CaTiO3 phase, while the space charge relaxation was attributed to the Schottky-type potential barrier responsible for the highly non-Ohmic properties observed in this composite polycrystalline system.

Preparation, microstructural and electrical characterization of SrTiO3 thin films prepared by chemical route

Polycrystalline SrTiO3 thin films having a cubic perovskite structure were prepared at different temperatures by the polymeric precursor method on platinum-coated silicon substrate. Crystalline films with uniform composition and thickness were prepared by spin-coating and the post-deposition heat treatment was carried out at different temperatures. The film showed good structural, dielectric, and insulating properties, Scanning electron microscopy (SEM) micrographs showed no occurrence of interdiffusion between the bottom electrode (platinum) and the film during post-annealing, indicating a stable interface between the SrTiO3 and the bottom electrode. The dielectric constant and dissipation factor at a frequency of 100 kHz were 250 and 0.01, respectively, for a 360 nm thick film annealed at 600 degreesC. The capacitance versus applied voltage characteristics showed that the capacitance was almost independent of the applied voltage. The I-V characteristics were ohmic in low fields and a Schottky emission and/or Poole-Frenkel emission were postulated in high fields. Room temperature leakage current density was found to be in the order of 10(-7) A/cm(2) for a 360 nm thick film in an applied electric field of about 100 kV/cm. The charge storage density of 36 fC/mum(2) was obtained in an applied electric field of about 100 kV/cm. (C) 2001 Published by Elsevier B.V. Ltd. All rights reserved.

Recent research developments in SnO2-based varistors

This paper discusses some advances in research conducted on SnO2-based electroceramics. The addition of different dopants, as well as several thermal treatments in oxidizing and inert atmospheres, were found to influence the microstructure and electrical properties of SnO2-based varistor ceramics. Measurements taken by impedance spectroscopy revealed variations in the height and width of the potential barrier resulting from the atmosphere in which thermal treatments were performed. High nonlinear coefficient values, which are characteristic of high-voltage and commercial ZnO varistors, were obtained for these SnO2-based systems. All the systems developed here have potentially promising varistor applications. (C) 2004 Elsevier B.V. All rights reserved.

Non-Ohmic and dielectric properties of a Ca2Cu2Ti4O12 polycrystalline system

An investigation was made into the non-Ohmic and dielectric properties of a Ca2Cu2Ti4O12 perovskite-type system. Compared to the traditional CaCu3Ti4O12-based composition, the imbalance between the Ca and Cu atoms caused the formation of a polycrystalline system presenting similar to 33.3 mol % of CaCu3Ti4O12 (traditional composition) and similar to 66.7 mol % of CaTiO3. As for non-Ohmic properties, the effect of this Ca and Cu atom imbalance was that a nonlinear electric behavior of similar to 1500 was obtained. This high nonlinear electrical behavior emerged in detriment to the ultrahigh dielectric property frequently reported. The high non-Ohmic property was explained by the existence of Schottky-type barriers, whose formation mechanism may be similar to that proposed for traditional metal oxide non-Ohmic devices, according to similarities discussed herein. (c) 2006 American Institute of Physics.