Experimental studies of the quench behaviour of MgB2 superconducting wires for fault current limiter applications

Various MgB2 wires with different sheath materials provided by Hyper Tech Research Inc., have been tested in the superconducting fault current limiter (SFCL) desktop tester at 24-26K in a self-field. Samples 1 and 2 are similarly fabricated monofilamentary MgB2 wires with a sheath of CuNi, except that sample 2 is doped with SiC and Mg addition. Sample 3 is a CuNi sheathed multifilamentary wire with Cu stabilization and Mg addition. All the samples with Nb barriers have the same diameter of 0.83mm and superconducting fractions ranging from 15% to 27% of the total cross section. They were heat-treated at temperatures of 700 °C for a hold time of 20-40min. Current limiting properties of MgB2 wires subjected to pulse overcurrents have been experimentally investigated in an AC environment in the self-field at 50Hz. The quench currents extracted from the pulse measurements were in a range of 200-328A for different samples, corresponding to an average engineering critical current density (Je) of around 4.8 × 10 4Acm-2 at 25K in the self-field, based on the 1νVcm-1 criterion. This work is intended to compare the quench behaviour in the Nb-barrier monofilamentary and multifilamentary MgB2 wires with CuNi and Cu/CuNi sheaths. The experimental results can be applied to the design of fault current limiter applications based on MgB2 wires. © IOP Publishing Ltd.

Swirling mean flow effect on fan-trailing edge broadband noise in a lined annular duct

The present study aims at investigating the effect of a swirling mean flow and a lined annular duct on rotor trailing-edge noise. The objectives are to investigate these effects on the eigenvalues and a tailored Green's function on one hand and on the realistic case of the fan trailing-edge noise on the other hand. Indeed, the mean flow in between the rotor and the stator of the fan is highly swirling. Moreover, interstage liners are used to reduce the noise produced by the fan stage. The extension of Ffowcs-Williams & Hawkings' acoustic analogy in a medium at rest with moving surfaces, of Goldstein's acoustic analogy in a hardwall circular duct with uniform mean flow and of Rienstra & Tester's Green's function in an annular lined duct with uniform mean flow to a swirling mean flow in an annular duct with liner is introduced. First, the eigenvalues and the Green's function are investigated showing a strong effect of the swirl and of the liner. Second, a rotor trailing-edge noise model accounting for both the effects of the annular duct with lined walls and the swirling mean flow is developed and applied to a realistic fan rotor with different swirling mean flows (and as a result different associated blade stagger angles). The benchmark cases are built from the Boeing 18-inch Fan Rig Broadband Noise Test. In all cases the swirling mean flow has a strong effect on the absolute noise level. The overall liner insertion loss is little changed by the swirl in the studied cases.

Finite Element studies on indentation size effect using a higher order strain gradient theory

In this work, a Finite Element implementation of a higher order strain gradient theory (due to Fleck and Hutchinson, 2001) has been used within the framework of large deformation elasto-viscoplasticity to study the indentation of metals with indenters of various geometries. Of particular interest is the indentation size effect (ISE) commonly observed in experiments where the hardness of a range of materials is found to be significantly higher at small depths of indentation but reduce to a lower, constant value at larger depths. That the ISE can be explained by strain gradient plasticity is well known but this work aims to qualitatively compare a gamut of experimental observations on this effect with predictions from a higher order strain gradient theory. Results indicate that many of the experimental observations are qualitatively borne out by our simulations. However, areas exist where conflicting experimental results make assessment of numerical predictions difficult. © 2012 Elsevier Ltd. All rights reserved.

The influence of topography and land use on water quality of Xiangxi River in Three Gorges Reservoir region

A self-organizing map (SOM) was used to cluster the water quality data of Xiangxi River in the Three Gorges Reservoir region. The results showed that 81 sampling sites could be divided into several groups representing different land use types. The forest dominated region had low concentrations of most nutrient variables except COD, whereas the agricultural region had high concentrations of NO3N, TN, Alkalinity, and Hardness. The sites downstream of an urban area were high in NH3N, NO2N, PO4P and TP. Redundancy analysis was used to identify the individual effects of topography and land use on river water quality. The results revealed that the watershed factors accounted for 61.7% variations of water quality in the Xiangxi River. Specifically, topographical characteristics explained 26.0% variations of water quality, land use explained 10.2%, and topography and land use together explained 25.5%. More than 50% of the variation in most water quality variables was explained by watershed characteristics. However, water quality variables which are strongly influenced by urban and industrial point source pollution (NH3N, NO2N, PO4P and TP) were not as well correlated with watershed characteristics.

Distribution of the macroinvertebrate communities in the Xiangxi River system and relationships with environmental factors

Surveys of macroinvertebrates were carried out in the Xiangxi River system during July of 2001. Among the 121 taxa collected, Ephemeroptera, Trichoptera, and Diptera dominated (41.7, 26.0, and 24.5% of the total relative abundance, respectively). Two-way indictor species analysis and detrended correspondence analysis divided the 49 sites into four groups based on species composition and relative abundance. Canonical correspondence analysis indicated that elevation, SiO2, pH, conductivity, hardness, and NO2-N were significant environmental factors affecting the distribution of macroinvertebrates.

Benthic algae of the Xiangxi River, China

From June 2000 to June 2002, four sites on the mainstem of the Xiangxi River and one site on each of its major tributaries were sampled 16 times each for benthic algae. All total, 223 taxa (most to species and variety levels) were found (193 Bacillariophyta, 20 Chlorophyta, nine Cyanophyta and one Xanthophyta). The diatoms Cocconeis placentula, Achnanthes linearis, and Diatoma vulgare dominated the system, with relative abundance of 33.3%, 18.8%, and 6.4%, respectively. The abundances of all the other taxa were under 5%, and 210 taxa collectively contributed less than 1% of the total abundance. Taxa diversity peaked in winter and reached a minimum in summer. Species richness varied considerably but was not significantly different over time. Maximum algal density occurred in later winter/spring (1.4 x 10(9) ind./m(2)) but was not significantly different from the minimum density, which occurred in August. Chlorophyll a showed similar seasonal fluctuation but also was not significantly different over time. Canonical correspondence analysis demonstrated that water hardness, depth, conductivity, and alkalinity had important influences on variation of epilithic algae in the Xiangxi River system.

Toxicity of cypermethrin to Daphnia magna HB

The acute toxic effect of the pesticide cypermethrin to Daphnia magna HB was examined. D. magna HB was exposed to cypermethrin at concentrations of 0, 1, 3, 5, 7, and 9 mg/L for 24 In. Data showed that the 24 h-LC50 of cypermthrin on D. magna HB was 4.81 mg/L. In contrast, the 24 h-LC50 of K2Cr2O7 (the national standard toxicant) to Daphnia magna was 0.38 mg/L in the current study. Results indicated that the Daphnia magna was very sensitive to pesticides. In addition, the effects of the culture condition(such as hardness, temperature and DO etc.) on Daphnia magna HB was also studied.

Structure of macrozoobenthos of the East Dongting nature reserve, with emphasis on relationships with environmental variables

Ecological survey of macrozoobenthos assemblages was carried out at 32 sites in the East Dongting Nature Reserve, located in the northern region of the East Dongting Lake in the middle basin of the Yangtze River, China. All total 51 taxa including 18 oligochaetes, 15 mollusks, 14 insects and four other animals were recorded. Mollusks composed the dominant group and accounted for more than 70% of the total abundance. Assemblages were composed mainly of scrapers (66.7%) and collector-gatherers (nearly 20%), and to a lesser extent collector-filterers (roughly 12%), predators (ca. 7%), and shredders (ca. 6%). Two-way indicator species analysis, detrended correspondence, and canonical correspondence analysis (CCA) were employed to identify the relationships between macrozoobenthos assemblages and environmental variables. Thirty-two sites were separated into four site groups based on composition and relative abundance of benthic macroinvertebrates. CCA detected that water depth, pH, conductivity, SiO2, total nitrogen, total phosphorus, alkalinity, hardness, and Ca2+, were significant environmental factors influencing the pattern of macozoobenthos. In this minimal subset, water depth, pH, alkalinity and hardness were the most influential variables.

First-principles study of ground-state properties and high pressure behavior of ThO2

The mechanical properties, electronic structure and phonon dispersion of ground state ThO2 as well as the structure behavior up to 240 GPa are studied using first-principles density-functional theory. Our calculated elastic constants indicate that both the ground-state fluorite structure and high pressure cotunnite structure of ThO2 are mechanically stable. The bulk modulus, shear modulus, and Young's modulus of cotunnite ThO2 are all smaller by approximately 25% compared with those of fluorite ThO2. The Poisson's ratios of both structures are approximately equal to 0.3 and the hardness of fluorite ThO2 is 22.4 GPa. The electronic structure and bonding nature of fluorite ThO2 are fully analyzed, and show that the Th-O bond displays a mixed ionic/covalent character. The phase transition from the fluorite to cotunnite structure is calculated to occur at the pressure of 26.5 GPa, consistent with recent experimental measurement by ldiri et al. [1]. For the cotunnite phase it is further predicted that an isostructural transition takes place in the pressure region of 80-130 GPa.

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation

In this study, the deformation mechanisms of nonpolar GaN thick films grown on m-sapphire by hydride vapor phase epitaxy (HVPE) are investigated using nanoindentation with a Berkovich indenter, cathodoluminescence (CL), and Raman microscopy. Results show that nonpolar GaN is more susceptible to plastic deformation and has lower hardness than c-plane GaN. After indentation, lateral cracks emerge on the nonpolar GaN surface and preferentially propagate parallel to the < 11 (2) over bar0 > orientation due to anisotropic defect-related stresses. Moreover, the quenching of CL luminescence can be observed to extend exclusively out from the center of the indentations along the < 11 (2) over bar0 > orientation, a trend which is consistent with the evolution of cracks. The recrystallization process happens in the indented regions for the load of 500 mN. Raman area mapping indicates that the distribution of strain field coincides well with the profile of defect-expanded dark regions, while the enhanced compressive stress mainly concentrates in the facets of the indentation.

Effect of counterpart on the tribological behavior and tribo-induced phase transformation of Si

The tribological behaviors and phase transformation of single crystal silicon against Si3N4, Ruby and steel were investigated in this study. It was found that the strong chemical action between silicon and Fe was the key factor to the tribological behavior of silicon as slid against steel. SEM and Raman spectroscopy indicated that phase transformation of single crystal silicon occurred during the running-in period at low sliding velocity as slid against Si3N4 and Ruby. and gave birth to single or a mixture phase of Si-III, Si-XII and amorphous silicon. The high hardness of counterpart and the absence of chemical action between silicon and counterpart facilitated the phase transformation of single crystal silicon. (C) 2008 Elsevier Ltd. All rights reserved.

Structural phase transformations of ZnS nanocrystalline under high pressure

In-situ energy dispersive x-ray diffraction on ZnS nanocrystalline was carried out under high pressure by using a diamond anvil cell. Phase transition of wurtzite of 10 nm ZnS to rocksalt occurred at 16.0 GPa, which was higher than that of the bulk materials. The structures of ZnS nanocrystalline at different pressures were built by using materials studio and the bulk modulus, and the pressure derivative of ZnS nanocrystalline were derived by fitting the equation of Birch-Murnaghan. The resulting modulus was higher than that of the corresponding bulk material, which indicates that the nanomaterial has higher hardness than its bulk materials.

Effect of incorporating nonlanthanoidal indium on optical properties of ferroelectric Bi4Ti3O12 thin films

Bi4Ti3O12 (BTO) and Bi3.25In0.75Ti3O12 (BTO:In) thin films were prepared on fused quartz and LaNiO3/Si (LNO) substrates by chemical solution deposition (CSD). Their microstructures, ferroelectric and optical properties were investigated by X-ray diffraction, scanning electron microscope, ferroelectric tester and UV-visible-NIR spectrophotometer, respectively. The optical band-gaps of the films were found to be 3.64 and 3.45 eV for the BTO and BTO:In films, respectively. Optical constants (refractive indexes and extinction coefficients) were determined from the optical transmittance spectra using the envelope method. Following the single electronic oscillator model, the single oscillator energy E-0, the dispersion energy E-d, the average interband oscillator wavelength lambda(0), the average oscillator strength S-0, the refractive index dispersion parameter (E-0/S-0), the chemical bonding quantity beta, and the long wavelength refractive index n(infinity) were obtained and analyzed. Both the refractive index and extinction coefficient of the BTO:In films are smaller than those of the BTO films. Furthermore, the refractive index dispersion parameter (E-0/S-0) increases and the chemical bonding quantity beta decreases in the BTO and BTO:In films compared with those of bulk. (C) 2007 Published by Elsevier B.V.

Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density

In order to obtain greater radiation hardness for SIMOX (separation by implanted oxygen) materials, nitrogen was implanted into SIMOX BOX (buried oxide). However, it has been found by the C-V technique employed in this work that there is an obvious increase of the fixed positive charge density in the nitrogen-implanted BOX with a 150 out thickness and 4 x 10(15) cm(-2) nitrogen implantation dose, compared with that unimplanted with nitrogen. On the other hand, for the BOX layers with a 375 nm thickness and implanted with 2 x 10(15) and 3 x 10(15) cm(-2) nitrogen doses respectively, the increase of the fixed positive charge density induced by implanted nitrogen has not been observed. The post-implantation annealing conditions are identical for all the nitrogen-implanted samples. The increase in fixed positive charge density in the nitrogen-implanted 150 nm BOX is ascribed to the accumulation of implanted nitrogen near the BOX/Si interface due to the post-implantation annealing process according to SIMS results. In addition, it has also been found that the fixed positive charge density in initial BOX is very small. This means SIMOX BOX has a much lower oxide charge density than thermal SiO2 which contains a lot of oxide charges in most cases.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.