Thermal, structural and optical properties of NiOx thin films deposited by reactive dc-magnetron sputtering

The NiOx thin films were deposited by reactive dc-magnetron sputtering from a nickel metal target in Ar + O-2 with the relative O-2 content 5%. The as-deposited NiOx, thin films could represent a two-component system comprising crystalline NiO particles dispersed in an amorphous Ni2O3. Decomposition temperature of the as-deposited NiO, thin films was at about 263 degrees C. After annealed at 400 degrees C for 30 min in air, the surface morphology of the films became very rough due to the decomposition of the Ni2O3, leading to the changes of the optical properties of the NiO, thin films. The reflectivity of the films annealed at 400 degrees C was lower than that of the as-deposited one and the optical contrast was 52% at 405 nm. (c) 2006 Elsevier B.V. All rights reserved.

Write-once blue laser recording using silicon doped SbOx thin films prepared by reactive dc-magnetron sputtering

Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O-2 with the relative O-2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. (c) 2007 Elsevier B.V. All rights reserved.

Low-loss planar and stripe waveguides in Nd3+-doped silicate glass produced by oxygen-ion implantation

We report on the fabrication and characterization of low-loss planar and stripe waveguides in a Nd3+-doped glass by 6 MeV oxygen-ion implantation at a dose of 1x10(15) ions/cm(2). The dark mode spectroscopy of the planar waveguide was measured using a prism coupling arrangement. The refractive index profile of the planar waveguide was reconstructed from a code based on the reflectivity calculation method. The results indicate that a refractive index enhanced region as well as an optical barrier have been created after the ion beam processing. The near-field mode profiles of the stripe waveguide were obtained by an end-fire coupling arrangement, by which three quasitransverse electric modes were observed. After annealing, the propagation losses of the planar and stripe waveguides were reduced to be similar to 0.5 and similar to 1.8 dB/cm, respectively. (c) 2007 American Institute of Physics.

Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching

This paper reports on the fabrication and characterization of a ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass. The He+ ion implantation (at energy of 2.8 MeV) is first applied onto the sample to produce a planar waveguide substrate, and then Ar+ ion beam etching (at energy of 500 eV) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. According to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. Simulation of the incident He ions at 2.8 MeV penetrating into the Er3+/Yb3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation.

Effects of Yb ion concentration on the spectral properties of lead silica glasses

The spectral properties in different concentration of Yb ions (0.5-5 mol%)-doped silica glasses are explored in this paper. The glasses are prepared by traditional melting method. The absorption spectra and the fluorescent lifetime (tau(f)) are measured at room temperature and low temperature (18 K). The stimulated cross-section (sigma(emi)) and potential laser properties (beta(min), I-sat, I-min) are calculated based on the absorption spectra. The absorption cross-section (sigma(abs)) are in the range 1.08 x 10(-20) - 1.18 x 10(-20) cm(2) in different glasses, the fluorescence lifetime (tau(f)) change from 1.9 to 1.2 ms with the increase of Yb3+ concentration. The potential laser properties indicate that lead silica glass is a good host for highly Yb ion doping glass. (c) 2005 Elsevier B.V. All rights reserved.

Low loss waveguide in Nd3+-doped silicate glass fabricated by carbon ion implantation

Low loss index enhanced planar waveguides in Nd3+-doped silicate glass were fabricated by 3.0 MeV C+ ion implantation. The enhancement of the refractive index confined the light propagating in the waveguide. The prism-coupling method was used to measure dark modes in the waveguide. The effective refractive indices of the waveguide were obtained based on the dark modes. The moving fiber method was applied to measure the waveguide propagation loss. Loss measured in non-annealed samples is about 0.6 dB/cm. And the waveguide mode optical near-field output at 633 nm was presented. (c) 2005 Elsevier B.V. All rights reserved.

Characterization of Er3+-doped Na2O-WO3-TeO2 glass for ion-exchanged waveguide amplifiers and lasers

Er^(3+)-doped Na2O-WO3-TeO2 glass consistent with standard ion-exchange technology has been fabricated and characterized. The measured absorption and emission spectra of the glass were analyzed by the Judd-Ofelt and McCumber theories. The intensity parameters are Ω2 = 7.01

Property studies of optical waveguide formed by 6.0 MeV carbon ion implantation into Nd : silicate glass

Nd:silicate glass was implanted at room temperature by 6.0 MeV C3+ ions with a dose of 2.0 x 10(15) ions cm(-2). A waveguide with thickness of about 6.3 mu m was formed. The prism-coupling method was used to observe the dark modes of the waveguide at 633 nm and 1539 nm, respectively. There are three dark modes at 633 nm, of which one is the enhanced-index mode. The propagation loss of the enhanced-index mode in the waveguide measured at 633 nm is 0.42 dB cm(-1) after annealing at 217 degrees C for 35 min. The reflectivity calculation method was applied to simulate the refractive index profiles in the waveguide. The mode optical near-field output at 633 nm was presented.