Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates. The effects of AlN interfacial layer on the electrical properties were investigated. At 300 K, high two-dimensional electron gas (2DEG) density of 1.66 x 10(11) cm(-2) and high electron mobility of 1346 cm(2) V-1 s(-1) were obtained for the high Al content HEMT structure with a 1 nm AlN interfacial layer, consistent with the low average sheet resistance of 287 Omega/sq. The comparison of HEMT wafers with and without AlN interfacial layer shows that high Al content AlGaN/AlN/GaN heterostructures are potential in improving the electrical properties of HEMT structures and the device performances. (c) 2006 Elsevier B.V. All rights reserved.

The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers

To fabricate nitride-based ultraviolet optoelectronic devices, a deposition process for high-Al-composition AlGaN (Al content > 50%) films with reduced dislocation densities must be developed. This paper describes the growth of high-Al-composition AlGaN film on (0001) sapphire via a LT AIN nucleation layer by low pressure metalorganic chemical vapor deposition (LPMOCVD). The influence of the low temperature AIN buffer layer thickness on the high-Al-content AlGaN epilayer is investigated by triple-axis X-ray diffraction (TAXRD), scanning electron microscopy (SEM), and optical transmittance. The results show that the buffer thickness is a key parameter that affects the quality of the AlGaN epilayer. An appropriate thickness results in the best structural properties and surface morphology. (c) 2006 Elsevier B.V. All rights reserved.

In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells

Two sensitive polarized spectroscopies, reflectance difference spectroscopy and photocurrent difference spectroscopy, are used to study the characteristic of the in-plane optical anisotropy in the symmetric and the asymmetric (001) GaAs/Al(Ga)As superlattices (SLs). The anisotropy spectra of the symmetric and the asymmetric SLs show significant difference: for symmetric ones, the anisotropies of the 1HH-->1E transition (1H1E) and 1L1E are dominant, and they are always approximately equal and opposite; while for asymmetric ones, the anisotropy of 1H1E is much less than that of 1L1E and 2H1E, and the anisotropy of 3H2E is very strong. The calculated anisotropy spectra within the envelope function model agree with the experimental results, and a perturbation approach is used to understand the role of the electric field and the interface potential in the anisotropy. (C) 2001 American Institute of Physics.

DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxy

Al-related DX-like centers were observed in n-type Al-doped ZnS1-xTex epilayers grown by molecular-beam epitaxy on GaAs substrates. The capacitance-voltage measurement, deep-level transient spectroscopy, and photoconductivity spectroscopy revealed that the behaviors of Al donors in ZnS1-xTex were similar to the so-called DX centers in AlxGa1-xAs. The optical ionization energies (E-i) and emission barriers (E-e) for the observed two Al-related DX-like centers were determined as E-i similar to 1.0 and 2.0cV and E-e similar to 0.21 and 0.39 eV, respectively. It was also shown that the formation of Al-related DX-like centers resulted in a significantly large lattice relaxation in ZnS1-xTex. (C) 2000 Elsevier Science B.V. All rights reserved.

Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate

Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In-0.9(Ga/Al)(0.1)As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate. (C) 2000 American Institute of Physics. [S0021-8979(00)10213-0].

High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers

In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) lasers with broad waveguide. The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- GaAs substrate. For 3 mu m stripe ridge waveguide lasers, the threshold current is 30 mA and the maximum output power and the output power operating in fundamental mode are 350 mW and 200 mW, respectively. The output power from the single mode fiber is up to 100 mW, the coupling efficiency is 50%. We also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 A/cm(2), a high slope efficiency of 1.03 W/A and a far-field pattern of 40 x 6 degrees are obtained. The maximum output power of 3.5 W is also obtained for 100 mu m wide coated lasers. (C) 2000 Elsevier Science B.V. All rights reserved.

InAs/ln(0.52)Al(0.48)As quantum wire structure with the specific layer-ordering orientation on InP(001)

Quantum wires were formed in the 6-period InAs/In0.52Al0.48As structure on InP(0 0 1) grown by molecular beam epitaxy. The structure was characterized with transmission electron microscopy. It was found that the lateral periodic compositional modulation in the QWR array was in the [1 (1) over bar 0] direction and layer-ordered along the specific orientation deviating from the [0 0 1] growth direction by about 30 degrees. This deviating angle is consistent with the calculation of the distribution of elastic distortion around quantum wires in the structure using the finite element technique. (C) 1999 Elsevier Science B.V. All rights reserved.

INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL

The composition and microstructure of buried layers of AlN formed by high energy N+ ion implantation into polycrystalline Al have been determined. Both bulk and evaporated thin films of Al have been implanted with 100 and 200 keV N+ ions to doses of up to 1.8 x 10(18)/cm2. The layers have been characterised using SIMS, XTEM, X-ray diffraction, FTIR, RBS and in terms of their microhardness. It is found that, for doses greater than the critical dose, buried, polycrystalline AlN layers are formed with preferred (100) or (002) orientations, which are sample specific. With increasing dose the nitrogen concentration saturates at the value for stoichiometric AlN although the synthesised compound is found to be rich in oxygen.

High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers

In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) lasers with broad waveguide. The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- GaAs substrate. For 3 mu m stripe ridge waveguide lasers, the threshold current is 30 mA and the maximum output power and the output power operating in fundamental mode are 350 mW and 200 mW, respectively. The output power from the single mode fiber is up to 100 mW, the coupling efficiency is 50%. We also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 A/cm(2), a high slope efficiency of 1.03 W/A and a far-field pattern of 40 x 6 degrees are obtained. The maximum output power of 3.5 W is also obtained for 100 mu m wide coated lasers. (C) 2000 Elsevier Science B.V. All rights reserved.

The preparation of 238U targets on 2mm Al foils

Preparation of 238U on 2μm Al foils by molecular plating technique is described. In order to obtain optimum conditions for deposition, several parameters influencing the quality of layers such as current density, distance between the anode and cathode and the deposition time were investigated. The target thickness was determined by spectrophotometry. The uniformity and morphology of the target surface were studied by means of scanning electron microscopy, energy dispersive X-ray spectrometry and Infrared spectra. The results show that uranium is deposited in its oxide or hydroxide form uniformly and adherently onto the foil.

~(19)F+~(27)Al耗散反应产物激发函数的长程关联

在中国原子能科学研究院的HI-13串列静电加速器上完成了19F+27Al耗散反应产物的激发函数测量。束流19F的入射能量从110.25MeV到118.75MeV,步长250keV,测量了实验室系+57°,+31°,-15°和-29°出射的类弹产物B,C,N,O,F和Ne的激发函数。观测到激发函数具有耗散反应的特征涨落结构,分析了激发函数之间的长程角度关联以及强烈的电荷数关联。

~(19)F+~(27)Al耗散反应中双核系统的转动与形变

测量了19F+27Al耗散反应产物B,C,N,O,F和Ne的激发函数,入射束流的能量从110．25MeV 到118．75MeV,能量步长为250keV．从产物的能量自关联函数中提取了反应中所形成的中间双核系统的转动惯量,与相粘模型计算的刚体转动惯量相比较,结果表明形成的双核系统有大的形变．

~(19)F+~(27)Al耗散反应产物截面测量中的不重复性

在中国原子能科学研究院的HI-13串列静电加速器上完成了114MeV和118．75MeV的19F+27Al 耗散反应产物B,C,N,O,F,Ne,Na和Mg的微分截面测量．条形27Al同位素靶的大小尺寸为 10mm×50mm,平均厚度约67μg／cm2．固定入射束流19F的能量,通过移动靶位,先后轰击了靶上20个不同的位置．实验结果表明,在弹靶系统、入射能量以及探测系统都相同的多次独立的微分截面测量中,截面的涨落不呈现高斯型几率分布．截面测量的这种不重复现象难以用有限计数率的统计性质来解释．

(19)~F+(27)~Al耗散反应中双核系统的转动与衰变

测量了19F+27Al耗散反应产物B,C,N,O,F和Ne的激发函数,入射束流的能量从110.25MeV 到118.75MeV,能量步长为250keV.用能量自关联函数方法从激发函数中提取了各反应产物的平均衰变宽度,利用同时考虑反应中所形成的中间双核系统的转动特性和衰变特性而发展了的Ericson核反应统计理论,讨论了19F+27Al耗散反应中双核系统随时间的演化过程.

~(19)F+~(27)Al反应产物的角分布、角分散与耗散机制

完成了114MeV19F+27Al深部非弹性碰撞产物的角分布测量.分析了反应产物B,C,N,O,F,Ne,Na,Mg和Al的实验室系角分布,讨论了反应形成的中间双核系统随时间演化过程中角分布所表现出的耗散特点.从实验上提取了反应产物各元素的角分散参数并作了角分散参数的理论拟合,讨论了角分散参数的物理意义以及角分散参数与耗散反应产物的电荷数Z之间的依赖关系.