Coletânea de resumos da III Mostra de Trabalhos dos Estagiários e Bolsistas da Embrapa Informática Agropecuária.

O objetivo principal do evento, que já faz parte do calendário oficial da unidade, é divulgar o resultado dos trabalhos desenvolvidos pelos estudantes, sob orientação dos pesquisadores e analistas, além de familiarizá-los com o universo da divulgação do conhecimento científico.

Desenvolvimento organizacional rural III: metodologia de intervencao de grupo em associacoes de agricultores de base familiar.

Uma metodologia de intervenção de grupo foi testada de grupo foi testada em 11 organizacoes rurais de base familiar, formada por nove associacoes de agricultores tradicionais, uma associacao de assentamento de reforma agraria e uma central de associacoes, sendo todas situadas em tres municipios do Estado de Goias. A metodologia constitui-se das seguintes etapas de intervencoes: apresentacao da proposta de trabalho, motivacao em nucleacao do grupo; diagnostico da organizacao; planejamento estrategico participativo (PEP), bem como a execução das propostas e acoes estrategicas; desenvolvimento e capacitacao dos agricultores e avaliação final da gestao das organizacoes. Este trabalho discutiu cada uma dessa etapas, e suas principais caracteristicas são: a construcao de objetivos compartilhados e a possibilidade de os membros da organização se desenvolverem como equipe trabalho e de participarem do desenvolvimento local. Dentre os resultados parciais obtidos ate o momento, destacaram-se: a producao e a comercializacao de doces e temperos caseiros; criacao e comercializacsao de frango caipira; implantacao de viveiro de mudas de plantas nativas; desenvolvimento de grupo de jovens rurais; implementacao de lavoura comunitaria, compra coletiva de produtos domesticos e insumos agricolas. Conclui-se que a referida metodologia favorece a dinamica do funcionamento das organizacoes rurais, mas não assegura a manutencao da coesao grupal, em caso de afastamento da equipe do projeto, no inicio de execução das propostas estrategicas, em face das dificuldades advindas do meio ambiente.

Ciclo III de seleção entre e dentro de progênies de meios irmãos na população de milho CMS-453.

1999

Sementes da educação do campo: frutos do III Seminário das Escolas Famílias do Amapá.

Formação pedagógica e instrumentos da alternância; Sustentabilidade; Infraestrutura; Politico-Administrativo.

Levantamento semidetalhado dos solos do Projeto Jaíba (etapa III), Estado de Minas Gerais.

Com o objetivo de prover informações dos recursos de solos da área de expansão do projeto de irrigação do Jaíba (Etapa III, que abrange 12.015 ha), a fim de possibilitar o adequado planejamento e monitoramento das atividades agrossilvipastoris e de preservação ambiental, foi realizado o levantamento de solos em nível de semidetalhe, na escala 1:50.000, conforme as normas preconizadas pela Embrapa. Predomina cobertura sedimentar cenozóica sobre rochas do Grupo Bambuí, dispostas em superfície aplainada, amplamente dominante, pontuada por dolinas e uvalas, além de um trecho de planície fluvial, ao longo do rio Ilha do Retiro. A região é caracterizada por temperaturas médias elevadas, precipitações médias abaixo dos 900 mm anuais e deficiência hídrica anual de 450 mm a 500 mm, evidenciando o curto período favorável ao crescimento das plantas em sequeiro, nas estações de primavera e verão. O ambiente seco também é evidenciado pela vegetação natural, dominada por florestas decíduas e caatingas, ou transição entre essas formações vegetais. A diferenciação de solos na área está bem condicionada ao nível topográfico relativo dos terrenos. Da superfície plana do topo da paisagem em direção às depressões semicirculares dispersas na área têm-se uma topossequência característica, com Latossolos Amarelos de caráter distrófico e textura média leve dominante na ampla área em nível topográfico superior; e solos dessa mesma classe, mas em geral com saturação por bases alta (eutróficos) e teores de argila ligeiramente mais elevados, localizados em depressões suavizadas, ou nas bordas ligeiramente inclinadas das dolinas; seguidos de Cambissolos Háplicos Tb Eutróficos (petroplínticos, endorredóxicos ou gleissólicos) de textura argilosa, em nível topográfico intermediário; aos quais se sucedem Planossolos e Gleissolos, que ocorrem associados nos fundos das dolinas e uvalas, mais rebaixadas. O vale do ribeirão Ilha do Retiro, por outro lado, apresenta um padrão de distribuição de solos distinto, com domínio de Neossolos Flúvicos, desenvolvidos de material de textura média ou argilosa de deposição aluvionar, ocorrendo nas partes topográficas inferiores, em associação com Chernossolos Rêndzicos, que tendem a predominar no segmento de nível topográfico um pouco mais alto, limitando-se no topo da encosta com a área de Latossolos Amarelos. A extensa área aplainada apresenta boas condições para agricultura intensiva com irrigação, porém com restrições decorrentes da baixa capacidade de água disponível, elevada taxa de infiltração e baixa fertilidade natural. Em direção aos níveis topográficos mais baixos, há uma tendência geral de aumentar as limitações à utilização agrícola, sobretudo em decorrência da deficiência de aeração, imposta pela dificuldade de drenagem e escoamento, assim como pela possibilidade de encharcamento por afluxo de água proveniente dos terrenos circundantes.

Steady-state motion of a Mode-III crack on imperfect interfaces

Mishuris, Gennady; Movchan, N.V.; Movchan, A.B., (2006) 'Steady-state motion of a Mode-III crack on imperfect interfaces', Quarterly Journal of Mechanics and Applied Mathematics 59(4) pp.487-516 RAE2008

A multichannel detector array with 768 pixels developed for electron spectroscopy

Langstaff, David; Chase, T., (2007) 'A multichannel detector array with 768 pixels developed for electron spectroscopy', Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 573(1-2) pp.169-171 RAE2008

Droga do ucznia. Polonistyczne ocenianie kształtujące na III i IV etapie edukacyjnym

Wydział Filologii Polskiej i Klasycznej: Instytut Filologii Polskiej

D. Antonii Gomezii, in Academia Salmanticensi Juris Civilis Primarii Professoris, Variae resolutiones juris civilis, communis, et regii : tomis tribus distinctae : quorum I Ultimarum Voluntatum, II Contractuum, III Delictorum, materias continet

Editio novissima cui praeter Annotationes Emanuelis Suarez a Ribeira, accesserunt Illustrationes, sive Additiones Joannis de Ayllon Laynez in fine cujusque Capitis appositae, cum Indice Generali.

Demonstracion critico-apologetica del Theatro Critico Universal, que dio á luz el R. P. M. Fr. Benito Gerónimo Feyjoó, Benedictino : con la qual se hace patente la evidencia, certeza ... que en los tomos I. II. III. en algunas partes del IV, y en la Ilustracion Apologetica, pretendió contradecir el Vulgo, con diferentes papelones ; por no haber entendido hasta ahora la conexion, y obvia significacion de las voces ; adjunta una defensa de las aprobaciones de la dicha Ilustracion

Quarta impresion.

Struktura fizyczna gruntu, zawartość substancji organicznej oraz skład chemiczny gleb w podłożach 21 stanowisk zieleni miejskiej na terenie Poznania. Część III. Zawartość makroelementów: N, P, K, S, Ca i Mg

This article is a continuation of a four-piece work describing the condition of soil in what has been broadly defined as central Poznań. This article presents the content of active forms of six chemical elements which tend to be absorbed by plants in biggest quantities. Relations between these chemical elements are discussed and indications are made of how to counteract the negative effects of deficits as well as overdoses of specific chemical elements in the substrate.

Neural Representations for Sensory-Motor Control, III: Learning a Body-Centered Representation of 3-D Target Position

A neural model is described of how the brain may autonomously learn a body-centered representation of 3-D target position by combining information about retinal target position, eye position, and head position in real time. Such a body-centered spatial representation enables accurate movement commands to the limbs to be generated despite changes in the spatial relationships between the eyes, head, body, and limbs through time. The model learns a vector representation--otherwise known as a parcellated distributed representation--of target vergence with respect to the two eyes, and of the horizontal and vertical spherical angles of the target with respect to a cyclopean egocenter. Such a vergence-spherical representation has been reported in the caudal midbrain and medulla of the frog, as well as in psychophysical movement studies in humans. A head-centered vergence-spherical representation of foveated target position can be generated by two stages of opponent processing that combine corollary discharges of outflow movement signals to the two eyes. Sums and differences of opponent signals define angular and vergence coordinates, respectively. The head-centered representation interacts with a binocular visual representation of non-foveated target position to learn a visuomotor representation of both foveated and non-foveated target position that is capable of commanding yoked eye movementes. This head-centered vector representation also interacts with representations of neck movement commands to learn a body-centered estimate of target position that is capable of commanding coordinated arm movements. Learning occurs during head movements made while gaze remains fixed on a foveated target. An initial estimate is stored and a VOR-mediated gating signal prevents the stored estimate from being reset during a gaze-maintaining head movement. As the head moves, new estimates arc compared with the stored estimate to compute difference vectors which act as error signals that drive the learning process, as well as control the on-line merging of multimodal information.

Simulation of multigate SOI transistors with silicon, germanium and III-V channels

In this work by employing numerical three-dimensional simulations we study the electrical performance and short channel behavior of several multi-gate transistors based on advanced SOI technology. These include FinFETs, triple-gate and gate-all-around nanowire FETs with different channel material, namely Si, Ge, and III-V compound semiconductors, all most promising candidates for future nanoscale CMOS technologies. Also, a new type of transistor called “junctionless nanowire transistor” is presented and extensive simulations are carried out to study its electrical characteristics and compare with the conventional inversion- and accumulation-mode transistors. We study the influence of device properties such as different channel material and orientation, dimensions, and doping concentration as well as quantum effects on the performance of multi-gate SOI transistors. For the modeled n-channel nanowire devices we found that at very small cross sections the nanowires with silicon channel are more immune to short channel effects. Interestingly, the mobility of the channel material is not as significant in determining the device performance in ultrashort channels as other material properties such as the dielectric constant and the effective mass. Better electrostatic control is achieved in materials with smaller dielectric constant and smaller source-to-drain tunneling currents are observed in channels with higher transport effective mass. This explains our results on Si-based devices. In addition to using the commercial TCAD software (Silvaco and Synopsys TCAD), we have developed a three-dimensional Schrödinger-Poisson solver based on the non-equilibrium Green’s functions formalism and in the framework of effective mass approximation. This allows studying the influence of quantum effects on electrical performance of ultra-scaled devices. We have implemented different mode-space methodologies in our 3D quantum-mechanical simulator and moreover introduced a new method to deal with discontinuities in the device structures which is much faster than the coupled-mode-space approach.

Theory of elasticity and electric polarization effects in the group-III nitrides

In this work, the properties of strained tetrahedrally bonded materials are explored theoretically, with special focus on group-III nitrides. In order to do so, a multiscale approach is taken: accurate quantitative calculations of material properties are carried out in a quantum first-principles frame, for small systems. These properties are then extrapolated and empirical methods are employed to make predictions for larger systems, such as alloys or nanostructures. We focus our attention on elasticity and electric polarization in semiconductors. These quantities serve as input for the calculation of the optoelectronic properties of these systems. Regarding the methods employed, our first-principles calculations use highly- accurate density functional theory (DFT) within both standard Kohn-Sham and generalized (hybrid functional) Kohn-Sham approaches. We have developed our own empirical methods, including valence force field (VFF) and a point-dipole model for the calculation of local polarization and local polarization potential. Our local polarization model gives insight for the first time to local fluctuations of the electric polarization at an atomistic level. At the continuum level, we have studied composition-engineering optimization of nitride nanostructures for built-in electrostatic field reduction, and have developed a highly efficient hybrid analytical-numerical staggered-grid computational implementation of continuum elasticity theory, that is used to treat larger systems, such as quantum dots.

First principles modelling of nucleation and growth during atomic layer deposition onto III-V substrates

Atomic layer deposition (ALD) is now used in semiconductor fabrication lines to deposit nanometre-thin oxide films, and has thus enabled the introduction of high-permittivity dielectrics into the CMOS gate stack. With interest increasing in transistors based on high mobility substrates, such as GaAs, we are investigating the surface treatments that may improve the interface characteristics. We focus on incubation periods of ALD processes on III-V substrates. We have applied first principles Density Functional Theory (DFT) to investigate detailed chemistry of these early stages of growth, specifically substrate and ALD precursor interaction. We have modelled the ‘clean-up’ effect by which organometallic precursors: trimethylaluminium (TMA) or hafnium and titanium amides clean arsenic oxides off the GaAs surface before ALD growth of dielectric commences and similar effect on Si3N4 substrate. Our simulations show that ‘clean-up’ of an oxide film strongly depends on precursor ligand, its affinity to the oxide and the redox character of the oxide. The predominant pathway for a metalloid oxide such as arsenic oxide is reduction, producing volatile molecules or gettering oxygen from less reducible oxides. An alternative pathway is non-redox ligand exchange, which allows non-reducible oxides (e.g. SiO2) to be cleaned-up. First principles study shows also that alkylamides are more susceptible to decomposition rather than migration on the oxide surface. This improved understanding of the chemical principles underlying ‘clean-up’ allows us to rationalize and predict which precursors will perform the reaction. The comparison is made between selection of metal chlorides, methyls and alkylamides precursors.