Reconfigurable Optical Add-Drop Multiplexer Based on Silicon Photonic Wire Waveguide

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High-Q and High-extinction-ratio Microdisk Add-drop Filter with Grating Couplers in Silicon-on-Insulator

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Compact four-channel reconfigurable optical add-drop multiplexer using silicon photonic wire (vol 282, pg 3477, 2009)

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黄土高原植被演替不同阶段植物系数的变化与适应性评价

用4年长期定位试验资料,利用植物系数、蒸散量、土壤含水量和土壤水分对植物的有效性等指标,研究了黄土高原植被群落不同演替阶段(草本群落→灌木群落→早期森林群落→顶级群落)的耗水特性与生态适应性。结果表明:不同演替阶段,群落实际蒸散量主要受降水控制,群落间差异不显著(P>0.05);土壤含水量是早期森林群落明显高于其它群落,草本群落明显高于灌木群落(P<0.05);植物系数是灌木群落>草本群落>乔木群落,而顶级群落大于早期森林群落;土壤水分对植物的有效性是早期森林和顶级群落明显高于草本和灌木群落(P<0.05)。因此,进行植被建设不但要考虑植物系数还要考虑土壤水分对不同植物的有效性。

REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING

Molecular beam epitaxy GaAs films on Si, with thicknesses ranging from 0.9-2.0-mu-m, were implanted with Si ions at 1.2-2.6 MeV to doses in the range 10(15)-10(16) cm-2. Subsequent rapid infrared thermal annealing was carried out at 850-degrees-C for 15 s in a flowing N2 atmosphere. Crystalline quality was analyzed by using Rutherfold backscattering/channeling technique and Raman scattering spectrometry. The experimental results show that the recrystallization process greatly depends on the dose and energy of implanted ions. Complete recrystallization with better crystalline quality can be obtained under proper implantation and subsequent annealing. In the improved layer the defect density was much lower than in the as-grown layer, especially near the interface.

INFLUENCES OF ALLOY DISORDER AND INTERFACE ROUGHNESS ON OPTICAL-SPECTRA OF INGAAS/GAAS STRAINED-LAYER QUANTUM-WELLS

We present studies of alloy composition and layer thickness dependences of excitonic linewidths in InGaAs/GaAs strained-layer quantum wells grown by MBE, using both photoluminescence and optical absorption. It is observed that linewidths of exciton spectra increase with indium content and well size. Using the virtual crystal approximation, the experimental data are analyzed. The results obtained show that the alloy disorder is the dominant mechanism for line broadening at low temperature. In addition, it is found that the absorption spectra related to light hole transitions have varied from a peak to a step-like structure as temperature increases. This behavior can be understood by the indirect space transitions of light holes.

DISORDER POINT FOR 2D ELECTRONS IN A HALF-FILLED LANDAU-LEVEL

Short-range correlations of two-dimensional electrons in a strong magnetic field are shown to be triangular in nature well below half-filling, but honeycomb well above half-filling. The half-filling point is thus proposed, and qualitatively confirmed by three-body correlation calculations, to be a new type of disorder point where short-range correlations change character. A wavefunction study also suggests that nodes become unbound at half-filling. Evidence for incompressibility but deformability of the half-filling state earlier suggested by Fano, Ortolani and Tosatti, is also presented and found to be in agreement with recent experiments.

Surface Disorder of GaN Irradiated by Highly Charged Arq+-Ions

Surface damage of gallium nitride films irradiated by Arq+ (6 ≤ q ≤ 16) ions at room temperature is studied by the atomic force microscopy. It is found that when charge state exceeds a threshold value, significant swelling was turned into obvious erosion in the irradiated region. The surface change of the irradiated region strongly depends on the charge state and ion fluence. On the other hand, surface change is less dependent on the kinetic energy nearly in the present experimental range (120 keV≤ Ek ≤ 220 keV). For q ≤ 14, surface of the irradiated region iscovered with an amorphous layer, rough and bulgy. A step-up appears between the irradiated and un-irradiated region. Moreover, the step height and the surface roughness are functions of the ion dose and charge state...