990 resultados para Solar light
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Dissertação de Final de Mestrado para obtenção do grau de Mestre em Engenharia Civil Especialização em Edificações
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Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações
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The possibility of creating baryon asymmetry at the electroweak phase transition in the minimal supersymmetric standard model is considered for the case when right-handed squarks are much lighter than left-handed ones. It is shown that the usual requirement upsilon(T-c)/T-c greater than or similar to 1 for baryogenesis can be satisfied in a range of the parameters of the model, consistent with present experimental bounds.
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To determine self-consistently the time evolution of particle size and their number density in situ multi-angle polarization-sensitive laser light scattering was used. Cross-polarization intensities (incident and scattered light intensities with opposite polarization) measured at 135 degrees and ex situ transmission electronic microscopy analysis demonstrate the existence of nonspherical agglomerates during the early phase of agglomeration. Later in the particle time development both techniques reveal spherical particles again. The presence of strong cross-polarization intensities is accompanied by low-frequency instabilities detected on the scattered light intensities and plasma emission. It is found that the particle radius and particle number density during the agglomeration phase can be well described by the Brownian free molecule coagulation model. Application of this neutral particle coagulation model is justified by calculation of the particle charge whereby it is shown that particles of a few tens of nanometer can be considered as neutral under our experimental conditions. The measured particle dispersion can be well described by a Brownian free molecule coagulation model including a log-normal particle size distribution. (C) 1996 American Institute of Physics.
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Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as deposited film is about 1.3 x 10(-1) Omega*cm and decreases down to 6.9 x 10(-3) Omega*cm as the annealing temperature is increased up to 500 degrees C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.
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TiO2 nanorod films have been deposited on ITO substrates by dc reactive magnetron sputtering technique. The structures of these nanorod films were modified by the variation of the oxygen pressure during the sputtering process. Although all these TiO2 nanorod films deposited at different oxygen pressures show an anatase structure, the orientation of the nanorod films varies with the oxygen pressure. Only a very weak (101) diffraction peak can be observed for the TiO2 nanorod film prepared at low oxygen pressure. However, as the oxygen pressure is increased, the (220) diffraction peak appears and the intensity of this diffraction peak is increased with the oxygen pressure. The results of the SEM show that these TiO2 nanorods are perpendicular to the ITO substrate. At low oxygen pressure, these sputtered TiO2 nanorods stick together and have a dense structure. As the oxygen pressure is increased, these sputtered TiO2 nanorods get separated gradually and have a porous structure. The optical transmittance of these TiO2 nanorod films has been measured and then fitted by OJL model. The porosities of the TiO2 nanorod films have been calculated. The TiO2 nanorod film prepared at high oxygen pressure shows a high porosity. The dye-sensitized solar cells (DSSCs) have been assembled using these TiO2 nanorod films prepared at different oxygen pressures as photoelectrode. The optimum performance was achieved for the DSSC using the TiO2 nanorod film with the highest (220) diffraction peak and the highest porosity.
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Com o presente trabalho é pretendido demonstrar a possibilidade de alimentação de um sistema de iluminação decorativa com recurso a soluções alternativas renováveis. O estudo é focado essencialmente na produção local de energia solar fotovoltaica e eólica. Inicialmente é efetuado o estudo técnico-económico da implementação de um sistema fotovoltaico. Posteriormente é efetuado o estudo da viabilidade técnico-económica da implementação do sistema hibrido, composto por um sistema fotovoltaico e um sistema eólico, optando pelo que mais se adequa à alimentação do sistema de iluminação decorativa exterior. Esta dissertação descreve a metodologia que procura melhorar a eficiência do sistema de led com o auxílio de ensaios em laboratório e simulação em software, com o objetivo de adaptar os sistemas de led instalados pela empresa ao sistema hibrido dimensionado. Finalmente, é efetuada a análise comparativa entre o atual sistema de iluminação decorativa e o sistema renovável dimensionado mais favorável para alimentar sistemas de iluminação decorativa. Procura-se assim com este projeto para além de apresentar um estudo teórico, proporcionar uma orientação à implementação de sistemas de microprodução destinados a alimentar sistemas de iluminação decorativa exterior.
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We report the results of a study of the sulphurization time effects on Cu2ZnSnS4 absorbers and thin film solar cells prepared from dc-sputtered tackedmetallic precursors. Three different time intervals, 10 min, 30min and 60 min, at maximum sulphurization temperature were considered. The effects of this parameter' change were studied both on the absorber layer properties and on the final solar cell performance. The composition, structure, morphology and thicknesses of the CZTS layers were analyzed. The electrical characterization of the absorber layer was carried out by measuring the transversal electrical resistance of the samples as a function of temperature. This study shows an increase of the conductivity activation energy from 10 meV to 54meV for increasing sulphurization time from 10min to 60min. The solar cells were built with the following structure: SLG/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Ni:Al grid. Several ac response equivalent circuit models were tested to fit impedance measurements. The best results were used to extract the device series and shunt resistances and capacitances. Absorber layer's electronic properties were also determined using the Mott–Schottky method. The results show a decrease of the average acceptor doping density and built-in voltage, from 2.0 1017 cm−3 to 6.5 1015 cm−3 and from 0.71 V to 0.51 V, respectively, with increasing sulphurization time. These results also show an increase of the depletion region width from approximately 90 nm–250 nm.
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In this report, we propose an AC response equivalent circuit model to describe the admittance measurements of Cu2ZnSnS4 thin film solar cell grown by sulphurization of stacked metallic precursors. This circuit describes the contact resistances, the back contact, and the heterojunction with two trap levels. The study of the back contact resistance allowed the estimation of a back contact barrier of 246 meV. The analysis of the trap series with varying temperature revealed defect activation energies of 45 meV and 113 meV. The solar cell’s electrical parameters were obtained from the J-V curve: conversion efficiency, 1.21%; fill factor, 50%; open circuit voltage, 360 mV; and short circuit current density, 6.8 mA/cm2.
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Dissertação para obtenção do grau de Mestre em Engenharia Electrotécnica
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In the present work we report the details of the preparation and characterization results of Cu2ZnSnS4 (CZTS) based solar cells. The CZTS absorber was obtained by sulphurization of dc magnetron sputtered Zn/Sn/Cu precursor layers. The morphology, composition and structure of the absorber layer were studied by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction and Raman scattering. The majority carrier type was identified via a hot point probe analysis. The hole density, space charge region width and band gap energy were estimated from the external quantum efficiency measurements. A MoS2 layer that formed during the sulphurization process was also identified and analyzed in this work. The solar cells had the following structure: soda lime glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Al grid. The best solar cell showed an opencircuit voltage of 345 mV, a short-circuit current density of 4.42 mA/cm2, a fill factor of 44.29% and an efficiency of 0.68% under illumination in simulated standard test conditions: AM 1.5 and 100 mW/cm2.
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Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) with their band gap energies around 1.45 eV and 1.0 eV, respectively, can be used as the absorber layer in thin film solar cells. By using a mixture of both compounds, Cu2ZnSn(S,Se)4 (CZTSSe), a band gap tuning may be possible. The latter material has already shown promising results such as solar cell efficiencies up to 10.1%. In this work, CZTSSe thin films were grown in order to study its structure and to establish the best growth precursors. SEM micrographs reveal an open columnar structure for most samples and EDS composition profiling of the cross sections show different selenium gradients. X-ray diffractograms show different shifts of the kesterite/stannite (1 1 2) peak, which indicate the presence of CZTSSe. From Raman scattering analysis, it was concluded that all samples had traces of CZTS and CZTSSe. The composition of the CZTSSe layer was estimated using X-ray diffraction and Raman scattering and both results were compared. It was concluded that Se diffused more easily in precursors with ternary Cu–Sn–S phases and metallic Zn than in precursors with ZnS and/or CZTS already formed. It was also showed that a combination of X-ray diffraction and Raman scattering can be used to estimate the ratio of S per Se in CZTSSe samples.
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Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Mecânica
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Devido ao acréscimo significativo de viaturas e peões nas grandes cidades foi necessário recorrer aos mecanismos existentes para coordenar o tráfego. Nesta perspectiva surge a implementação de semáforos com o objectivo de ordenar o tráfego nas vias rodoviárias. A gestão de tráfego, tem sido sujeita a inovações tanto ao nível dos equipamentos, do software usado, gestão centralizada, monitorização das vias e na sincronização semafórica, sendo possível a criação de programas ajustados às diferentes exigências de tráfego verificadas durante as vinte e quatro horas para pontos distintos da cidade. Conceptualmente foram elaborados estudos, com o objectivo de identificar a relação entre a velocidade o fluxo e o intervalo num determinado intervalo de tempo, bem como a relação entre a velocidade e a sinistralidade. Até 1995 Portugal era um dos países com maior número de sinistros rodoviários Na sequência desta evolução foram instalados radares de controlo de velocidade no final de 2006 com o objectivo de obrigar ao cumprimento dos limites de velocidade impostos pelo código da estrada e reduzir a sinistralidade automóvel na cidade de Lisboa. Passados alguns anos sobre o investimento realizadoanteriormente, constatamos que existe a necessidade de implementar novas tecnologias na detecção das infracções, sejam estas de excesso de velocidade ou violação do semáforo vermelho (VSV), optimizar a informação disponibilizada aos automobilistas e aos peões, coordenar a interacção entre os veículos prioritários e os restantes presentes na via, dinamizar a gestão interna das contra ordenações, agilizar os procedimentos informatizar a recolha deinformação de modo a tornar os processos mais céleres.
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Known algorithms capable of scheduling implicit-deadline sporadic tasks over identical processors at up to 100% utilisation invariably involve numerous preemptions and migrations. To the challenge of devising a scheduling scheme with as few preemptions and migrations as possible, for a given guaranteed utilisation bound, we respond with the algorithm NPS-F. It is configurable with a parameter, trading off guaranteed schedulable utilisation (up to 100%) vs preemptions. For any possible configuration, NPS-F introduces fewer preemptions than any other known algorithm matching its utilisation bound. A clustered variant of the algorithm, for systems made of multicore chips, eliminates (costly) off-chip task migrations, by dividing processors into disjoint clusters, formed by cores on the same chip (with the cluster size being a parameter). Clusters are independently scheduled (each, using non-clustered NPS-F). The utilisation bound is only moderately affected. We also formulate an important extension (applicable to both clustered and non-clustered NPS-F) which optimises the supply of processing time to executing tasks and makes it more granular. This reduces processing capacity requirements for schedulability without increasing preemptions.