热退火γ-Al_2O_3/Si异质结构薄膜质量改进

采用高真空MOCVD外延技术，利用TMA（Al(CH_3)_3）和O_2作为反应源，在Si(100)衬底上外延生长γ－Al_2O_3绝缘膜形成γ-Al_2O_3/Si异质结构材料。同时，引入外延后退火工艺以便改善γ-Al_2O_3薄膜的晶体质量及电学性能。测试结果表明，通过在O_2常压下的退火工艺可以有效地消除γ－Al_2O_3外延层的残余热应力及孪晶缺陷，改善外延层的晶体质量，同时可以提高MOS电容的抗击穿能力，降低漏电电流。

与CMOS工艺兼容的硅高速光电探测器模拟与设计

用器件模拟的方法，设计了一种与常规CMOS工艺兼容的硅高速光电探测器，该探测器可与CMOS接收机电路单片集成，对该探测器进行了器件模拟研究，给出了该探测器的电路模型。通过MOSIS（MOS implementation support project）0.35 μm COMS工艺制做了该探测器，实际测试了该器件的频率响应和波长响应，探测器频率响应在1GH以上，峰值波长响应在0.69 μm。

Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si

In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si/gamma-Al2O3/Si. First, single crystalline gamma-Al2O3 (100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si/gamma-Al2O3 (100)/Si(100) SOI materials are characterized in detail by RHEED, XRD and AES techniques. The results demonstrate that the device-quality novel SOI materials Si/gamma-Al2O3 (100)/Si(100) has been fabricated successfully and can be used for application of MOS device.

Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon

The gamma-Al2O3 films were grown on Si (100) substrates using the sources of TMA (Al (CH3)(3)) and O-2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the gamma-Al2O3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was gamma-Al2O3(100)/Si(100). The thickness uniformity of gamma-Al2O3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000degreesC in O-2 atmosphere. The high-frequency C-V and leakage current of Al/gamma-Al2O3/Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick gamma-Al2O3 film on silicon increases from 17V to 53V.

一种红外探测器专用77K工作CMOS前置放大器

利用single endedfolded cascode结构和MOS管工作在线性区做反馈电阻,实现了一种在77K工作的高性能低功耗、低噪声前置放大器.分析了它的噪声特性,提出了减少噪声的措施.此前置放大器用1.2μm的标准CMOS工艺制造完成.经过测试,这种前置放大器在低温77K下能正常工作,反馈电阻大小为兆欧级,线性度达到了1%,等效输入噪声电流仅0.03pA/Hz,功耗小于1mW.

基于DMOS管的电荷灵敏前置放大器设计；Design of A Charge Sensitive Preamplifier Based on DMOS FET

提出了一种由DMOS场效应管构成的电荷灵敏前置放大器,可用于硅,Si(Li),CdZnTe及CsI探测器。该前置放大器采用不同于传统的阻容反馈式的电路结构,完全使用MOS管搭建,该前放的设计完成为设计实现ASIC电路准备了技术基础。由Multisi m仿真结果看出该电荷灵敏前置放大器输出信号上升时间小于15ns,并且具有很好的稳定性。

基于CMOS器件的专用放大电路设计

随着国家大科学工程兰州重离子加速器冷却储存环(HIRFL-CSR)建成，CSRm实验探测系统也正在建设当中。CSRm实验探测系统具有多种探测器数万个探测单元。对于这样先进的探测器和大型实验探测系统采用传统的电子学仪器和方法已经无法构成读出电子学系统和数据获取系统，对前端读出电子学系统、数据获取系统提出更高的要求。因此，采用专用集成电路芯片(ASIC)构成前端读出电子学系统是最可行的方法。本论文所述的基于MOS管的专用放大电路设计正是基于集成电路（ASIC）芯片构建前端读出电子学系统的前期研究子部分。作为ASIC前端读出电子学研究的一部分，本论文主要阐述基于MOS器件的放大电路的研究，主要包括以下内容： 1、设计及实现基于CMOS管的电荷灵敏前置放大器，最后给出制作PCB板后的实验室调试结果； 2、设计仿真基于DMOS管的电荷灵敏前置放大器，对仿真结果进行讨论； 3、利用集成电路设计软件Tanner Pro实现电荷灵敏前置放大器的物理版图设计

微功耗核谱数据获取系统

本文介绍我们最新研制的微功耗核谱数据获取系统。目前，该系统基于微型计算机（IBM PC 486）获取，有待进一步发展成单片机获取系统。该系统具有功能强、功耗低、体积小、重量轻以及抗辐射的特点。为了降低功耗，电路设计中尽量使电路简单化，并选用微功耗、抗辐射的MOS场效应管元件。功率消耗单通道小于2.2w，若做成四通道可少于4W。 本系统以脉冲幅度分析方式获取数据，软件采用Turbo C 2.0编写，界面友好，操作方便。

Chemical Bonding and Electronic Structure of 4d-Metal Monosulfides

Bond distances, vibrational frequencies, dissociation energies, electron affinities, ionization potentials and dipole moments of the title molecules in neutral and charged ions were studied by use of density functional method. Ground states for each molecule were assigned. The calculated bond distance decreases with the increasing of atomic number of 4d metals, reaches minimum at RhS, then increases. For cationic molecules, the calculated bond distance decreases to the minimum at MoS+, then increases. The calculated vibrational frequency decreases from YS(YS+) to PdS(PdS+) for both neutral and cationic molecules. The bond ionic character decreases from YS(YS+) to PdS(PdS+) for neutral and cationic molecules. The bonding patterns are discussed and compared with the available studies.

Ambipolar organic field-effect transistors with air stability, high mobility, and balanced transport

Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though symmetrical Au source and drain electrodes were used, and exhibited air stability and balanced ambipolar transport behavior. High field-effect mobilities of 0.04 cm(2)/V s for the holes and 0.036 cm(2)/V s for the electrons were obtained. The capacitance-voltage characteristic of metal-oxide-semiconductor (MOS) diode confirmed that electrons and holes are transported at F16CuPc and BP2T layers, respectively. On this ground, complementary MOS-like inverters comprising two identical ambipolar OFETs were constructed.

含柠檬酸配体的钼硫簇合物的合成与晶体结构的测定

合成了含有Mo—S簇阴离子 [Mo2 O2 ( μ S) 2 (C6H5O7) (C6H4 O7) ]5-柠檬酸簇合物 ,并通过元素分析、红外光谱、紫外 可见光谱和X射线光电子能谱对配合物进行了表征 ,用X射线衍射法测定了该化合物的晶体结构 .结果表明 ,该簇合物属于单斜晶系 ,空间群P2 1/c,a =2 3 766( 5)nm ,b =1 3 2 74 ( 3 )nm ,c =2 2 4 71 ( 5)nm ,α=γ =90°,β=1 1 8 2 1°,V =6 2 4 7( 2 )nm3 ,Z =8,一致性因子R =0 0 83 1 ,R2 ,w=0 1 536.该簇合物阴离子中每一个Mo原子都采取扭曲的八面体结构 ,柠檬酸通过羟基、α 羧基、一个 β 羧基与Mo配位 .晶体结构表明在一个结晶学上不对称的结构单元内有两个结晶学上独立的分子.

Electrochemical behaviour of TCNQ on platinum supported BLMs

The electrochemical behaviour of TCNQ modified S-BLM has been investigated through capacitor measurement and cyclic voltammetry (CV) which shows the surface wave behaviour of the TCNQ redox form. The voltammetry CV has shown different pairs peak at different scan rates and a possible explanation is provided.

Insulin-like growth factor-binding protein-3 plays an important role in regulating pharyngeal skeleton and inner ear formation and differentiation

Insulin-like growth factor-binding protein (IGFBP)-3 is the major insulin-like growth factor (IGF) carrier protein in the bloodstream. IGFBP-3 prolongs the half-life of circulating IGFs and prevents their potential hypo-glycemic effect. IGFBP-3 is also expressed in many peripheral tissues in fetal and adult stages. In vitro, IGFBP-3 can inhibit or potentiate IGF actions and even possesses IGF-independent activities, suggesting that local IGFBP-3 may also have paracrine/autocrine function(s). The in vivo function of IGFBP-3, however, is unclear. In this study, we elucidate the developmental role of IGFBP-3 using the zebrafish model. IGFBP-3 mRNA expression is first detected in the migrating cranial neural crest cells and subsequently in pharyngeal arches in zebrafish embryos. IGFBP-3 mRNA is also persistently expressed in the developing inner ears. To determine the role of IGFBP-3 in these tissues, we ablated the IGFBP-3 gene product using morpholino-modified antisense oligonucleotides (MOs). The IGFBP-3 knocked down embryos had delayed pharyngeal skeleton morphogenesis and greatly reduced pharyngeal cartilage differentiation. Knockdown of IGFBP-3 also significantly decreased inner ear size and disrupted hair cell differentiation and semicircular canal formation. Furthermore, reintroduction of a MO-resistant form of IGFBP-3 "rescued" the MO-induced defects. These findings suggest that IGFBP-3 plays an important role in regulating pharyngeal cartilage and inner car development and growth in zebrafish.

掌裂橐吾的胚胎学

首次报道了掌裂橐吾的胚胎发育过程。药壁发育双子叶型; 绒毡层发育属“The Cos-mos bip innatus”型；成熟花粉为3 细胞型； 单珠被, 薄珠心, 倒生胚珠；具发达的珠被绒毡层；胚囊发育为4 孢子型, 类似德鲁撒型(Drusa)； 胚乳发育为核型, 胚胎发育为紫菀型千里光变型。