Characterization of diagenetic fluids at ODP Site 103-639

Site 639, drilled during Leg 103 of the Ocean Drilling Program, penetrated an Upper Jurassic to Lower Cretaceous carbonate platform on a tilted fault block along the Galicia margin off the northwest Iberian Peninsula. The carbonate platform is composed primarily of a sequence of dolomite overlying limestone. Samples were analyzed for mineral chemistry, stable isotope geochemistry, fluid inclusion microthermometry, and volatile contents and by dolomite pyrolysis mass spectrometry for trace sulfate minerals. The dolomite recovered from the Galicia margin at Site 639 formed during shallow burial from sulfate-bearing, hypersaline brines at slightly elevated temperatures. The light oxygen isotopic signatures of the dolomite are interpreted as the result of the evaporative loop and slightly elevated temperatures during dolomite formation or from reequilibration at higher temperatures during deeper burial. The hypersalinity is interpreted to be associated with a nearby, shallow restricted basin that formed during rifting of the Iberian margin from Newfoundland. The dolomitization of the platform is therefore a by-product of the rifting.

Microsedimentological characterization as indicators of sedimentary processes and climate changes during Lateglacial at Laguna Potrok Aike, Santa Cruz, Argentina

Palaeoclimatic and paleoenvironmental high latitude records in the Southern Hemisphere are scarce compared to the northern counterpart. However, understanding global evolution of environmental systems during sudden climate changes is inseparable from an equivalent knowledge of both Hemispheres. In this context, a high-resolution study of lacustrine sediments from Laguna Potrok Aike, Santa Cruz province, Patagonia, Argentina, was conducted for the Lateglacial period using concurrent X-Ray Fluorescence (XRF) and Scanning electron microscope analyses. Peaks of Ca/Si and Mn, and occurrences of the green alga Phacotus lenticularis have been interpreted as variations in ventilation of the water column from 13.6 to 11.1 ka cal. BP. During this interval, mild climate conditions during the Younger Dryas are characterized by relatively weak westerlies favouring the formation of a stratified water body as indicated by preserved manganese and Ca/Si peaks and high Total Organic Carbon (TOC) values. In this environment, water in the epilimnion can reach sufficiently high temperature to allow P. lenticularis to grow. Colder conditions are marked by peaks in Ca without P. lenticularis and occur during the Antarctic Cold Reversal (ACR). In this Lateglacial interval, micropumices were also detected in large amount. Image analysis of thin sections allowed the counting and size measurement of detrital particles and micropumices separately. Micropumices significantly influence the iron and titanium content, hence preventing to use them as proxies of detrital input in this interval.

Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs

Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the ID and gm levels. DC characterization at high temperature has demonstrated that ID and gm decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects.

Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy

Molecular beam epitaxy growth of ten-period lattice-matched InAlN/GaN distributed Bragg reflectors (DBRs) with peak reflectivity centered around 400nm is reported including optical and transmission electron microscopy (TEM) measurements [1]. Good periodicity heterostructures with crack-free surfaces were confirmed, but, also a significant residual optical absorption below the bandgap was measured. The TEM characterization ascribes the origin of this problem to polymorfism and planar defects in the GaN layers and to the existence of an In-rich layer at the InAlN/GaN interfaces. In this work, several TEM based techniques have been combined.

TEM and SAED Characterization of Metakaolin. Pozzolanic Activity

The present study deals with a characterization of metakaolin pozzolanic activity and its chemical character exhibited in the Ordinary Portland Cement (OPC) blends by means of Transmission Electron Microscopy (TEM) and Selected-Area Electron Diffraction (SAED) techniques principally. Metakaolin sample was prepared by calcination of kaolin rock (Guadalajara, Spain) at 780°C. Two OPC of different chemical composition from the tricalcium aluminate content point of view were chosen and Portland cement blends series elaborated and then submitted to the pozzolanic activity test (EN 196-5 or Frattini test). The main mineralogical components of the metakaolin are determined qualitatively: χ-alumina and quartz. The chemical character of the metakaolin is described because of its final composition as well as due to its Al atoms possible coordination. The crystalline order of the material is found to be of both amorphous and polycrystalline, being an intimate amorphous mixture of alumina and silica. Finally, all the alumina capable of reacting chemically is denominated and classified as reactive alumina component, Al2O3r−, of pozzolans, as well as the aluminic chemical character of metakaolin in OPC blends is once again proved and exhibited by means of Friedel's salt formation studied already at 4 h-age.

Intraply fracture of fiber-reinforced composites: microscopic mechanisms and modeling

The fracture behavior parallel to the fibers of an E-glass/epoxy unidirectional laminate was studied by means of three-point tests on notched beams. Selected tests were carried out within a scanning electron microscope to ascertain the damage and fracture micromechanisms upon loading. The mechanical behavior of the notched beam was simulated within the framework of the embedded cell model, in which the actual composite microstructure was resolved in front of the notch tip. In addition, matrix and interface properties were independently measured in situ using a nanoindentor. The numerical simulations very accurately predicted the macroscopic response of the composite as well as the damage development and crack growth in front of the notch tip, demonstrating the ability of the embedded cell approach to simulate the fracture behavior of heterogeneous materials. Finally, this methodology was exploited to ascertain the influence of matrix and interface properties on the intraply toughness.

Mechanical Characterization of Multicrystalline Silicon Substrates for Solar Cell Applications

The possibility of using more economical silicon feedstock, i.e. as support for epitaxial solar cells, is of interest when the cost reduction and the properties are attractive. We have investigated the mechanical behaviour of two blocks of upgraded metallurgical silicon, which is known to present high content of impurities even after being purified by the directional solidification process. These impurities are mainly metals like Al and silicon compounds. Thus, it is important to characterize their effect in order to improve cell performance and to ensure the survival of the wafers throughout the solar value chain. Microstructure and mechanical properties were studied by means of ring on ring and three point bending tests. Additionally, elastic modulus and fracture toughness were measured. These results showed that it is possible to obtain marked improvements in toughness when impurities act as microscopic internal crack arrestors. However, the same impurities can be initiators of damage due to residual thermal stresses introduced during the crystallization process.

Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

The use of laser beams as excitation sources for the characterization of semiconductor nanowires (NWs) is largely extended. Raman spectroscopy and photoluminescence (PL) are currently applied to the study of NWs. However, NWs are systems with poor thermal conductivity and poor heat dissipation, which result in unintentional heating under the excitation with a focused laser beam with microscopic size, as those usually used in microRaman and microPL experiments. On the other hand, the NWs have subwavelength diameter, which changes the optical absorption with respect to the absorption in bulk materials. Furthermore, the NW diameter is smaller than the laser beam spot, which means that the optical power absorbed by the NW depends on its position inside the laser beam spot. A detailed analysis of the interaction between a microscopic focused laser beam and semiconductor NWs is necessary for the understanding of the experiments involving laser beam excitation of NWs. We present in this work a numerical analysis of the thermal transport in Si NWs, where the heat source is the laser energy locally absorbed by the NW. This analysis takes account of the optical absorption, the thermal conductivity, the dimensions, diameter and length of the NWs, and the immersion medium. Both free standing and heat-sunk NWs are considered. Also, the temperature distribution in ensembles of NWs is discussed. This analysis intends to constitute a tool for the understanding of the thermal phenomena induced by laser beams in semiconductor NWs.

Mechanical characterization of multicrystalline silicon wafers

The possibility of using more economical silicon feedstock, i.e. as support for epitaxial solar cells, is of interest when the cost reduction and the properties are attractive. We have investigated the mechanical behavior of two blocks of upgraded metallurgical silicon, which is known to present high content of impurities even after being purified by the directional solidification process. The impurities are mainly metals like Al and silicon compounds. Thus, it is important to characterize their effect in order to improve cell performance and to ensure the survival of the wafers throughout the solar value chain. Microstructure and mechanical properties were studied by means of ring on ring and three point bending tests. Additionally, Young’s modulus, hardness and fracture toughness were measured. These results showed that it is possible to obtain marked improvements in toughness when impurities act as microscopic internal crack arrestors. However, the same impurities can be initiators of damage due to residual thermal stresses introduced during the crystallization process.

A rheological characterization of mashed potatoes enriched with soy protein isolate

The effect of the addition of soy protein isolate (SPI) (0, 15, 30, 45 and 60 g kg ) on viscoelastic properties, large deformation measurements and microstructure of fresh (FM) and frozen/thawed (F/TM) mashed potatoes was investigated. Rheological data showed weak gel behaviour for both FM and F/TM potatoes without and with added SPI together with a signi?cant decrease of system viscoelasticity (G and G ) with increasing SPI volume fraction, primarily attributed to the no interaction between the amylose/amylopectine matrix and the dispersed SPI particles or aggregates as revealed by scanning electron microscopy (SEM). Micrographs also showed that SPI formed white coarse aggregates. A freeze/thaw cycle produced a more signi?cant decrease in viscoelastic functions, due to superior aggregation of denatured SPI and reduced water activity. In F/TM samples, high correlations between small and large deformation measurements were found. Results may be useful for technological applications in SPI-enriched.

Methodology for kinematic cycle characterization of vehicles with fixed routes in urban areas

This paper analyses the driving cycles of a fleet of vehicles with predetermined urban itineraries. Most driving cycles developed for such type of vehicles do not properly address variability among itineraries. Here we develop a polygonal driving cycle that assesses each group of related routes, based on microscopic parameters. It measures the kinematic cycles of the routes traveled by the vehicle fleet, segments cycles into micro-cycles, and characterizes their properties, groups them into clusters with homogeneous kinematic characteristics within their specific micro-cycles, and constructs a standard cycle for each cluster. The process is used to study public bus operations in Madrid.

Comportamiento frente a la durabilidad de morteros de reparación de cemento modificados con polímeros

El auge que ha surgido en los últimos años por la reparación de edificios y estructuras construidas con hormigón ha llevado al desarrollo de morteros de reparación cada vez más tecnológicos. En el desarrollo de estos morteros por parte de los fabricantes, surge la disyuntiva en el uso de los polímeros en sus formulaciones, por no encontrarse justificado en ocasiones el trinomio prestaciones/precio/aplicación. En esta tesis se ha realizado un estudio exhaustivo para la justificación de la utilización de estos morteros como morteros de reparación estructural como respuesta a la demanda actual disponiéndolo en tres partes: En la primera parte se realizó un estudio del arte de los morteros y sus constituyentes. El uso de los morteros se remonta a la antigüedad, utilizándose como componentes yeso y cal fundamentalmente. Los griegos y romanos desarrollaron el concepto de morteros de cal, introduciendo componentes como las puzolanas, cales hidraúlicas y áridos de polvo de mármol dando origen a morteros muy parecidos a los hormigones actuales. En la edad media y renacimiento se perdió la tecnología desarrollada por los romanos debido al extenso uso de la piedra en las construcciones civiles, defensivas y religiosas. Hubo que esperar hasta el siglo XIX para que J. Aspdin descubriese el actual cemento como el principal compuesto hidraúlico. Por último y ya en el siglo XX con la aparición de moléculas tales como estireno, melanina, cloruro de vinilo y poliésteres se comenzó a desarrollar la industria de los polímeros que se añadieron a los morteros dando lugar a los “composites”. El uso de polímeros en matrices cementantes dotan al mortero de propiedades tales como: adherencia, flexibilidad y trabajabilidad, como ya se tiene constancia desde los años 30 con el uso de caucho naturales. En la actualidad el uso de polímeros de síntesis (polivinialacetato, estireno-butadieno, viniacrílico y resinas epoxi) hacen que principalmente el mortero tenga mayor resistencia al ataque del agua y por lo tanto aumente su durabilidad ya que se minimizan todas las reacciones de deterioro (hielo, humedad, ataque biológico,…). En el presente estudio el polímero que se utilizó fue en estado polvo: polímero redispersable. Estos polímeros están encapsulados y cuando se ponen en contacto con el agua se liberan de la cápsula formando de nuevo el gel. En los morteros de reparación el único compuesto hidraúlico que hay es el cemento y es el principal constituyente hoy en día de los materiales de construcción. El cemento se obtiene por molienda conjunta de Clínker y yeso. El Clínker se obtiene por cocción de una mezcla de arcillas y calizas hasta una temperatura de 1450-1500º C por reacción en estado fundente. Para esta reacción se deben premachacar y homogeneizar las materias primas extraídas de la cantera. Son dosificadas en el horno con unas proporciones tales que cumplan con unas relación de óxidos tales que permitan formar las fases anhidras del Clínker C3S, C2S, C3A y C4AF. De la hidratación de las fases se obtiene el gel CSH que es el que proporciona al cemento de sus propiedades. Existe una norma (UNE-EN 197-1) que establece la composición, especificaciones y tipos de cementos que se fabrican en España. La tendencia actual en la fabricación del cemento pasa por el uso de cementos con mayores contenidos de adiciones (cal, puzolana, cenizas volantes, humo de sílice,…) con el objeto de obtener cementos más sostenibles. Otros componentes que influyen en las características de los morteros son: - Áridos. En el desarrollo de los morteros se suelen usar naturales, bien calizos o silícicos. Hacen la función de relleno y de cohesionantes de la matriz cementante. Deben ser inertes - Aditivos. Son aquellos componentes del mortero que son dosificados en una proporción menor al 5%. Los más usados son los superplastificantes por su acción de reductores de agua que revierte en una mayor durabilidad del mortero. Una vez analizada la composición de los morteros, la mejora tecnológica de los mismos está orientada al aumento de la durabilidad de su vida en obra. La durabilidad se define como la capacidad que éste tiene de resistir a la acción del ambiente, ataques químicos, físicos, biológicos o cualquier proceso que tienda a su destrucción. Estos procesos dependen de factores tales como la porosidad del hormigón y de la exposición al ambiente. En cuanto a la porosidad hay que tener en cuenta la distribución de macroporos, mesoporos y microporos de la estructura del hormigón, ya que no todos son susceptibles de que se produzca el transporte de agentes deteriorantes, provocando tensiones internas en las paredes de los mismos y destruyendo la matriz cementante Por otro lado los procesos de deterioro están relacionados con la acción del agua bien como agente directo o como vehículo de transporte del agente deteriorante. Un ambiente que resulta muy agresivo para los hormigones es el marino. En este caso los procesos de deterioro están relacionados con la presencia de cloruros y de sulfatos tanto en el agua de mar como en la atmosfera que en combinación con el CO2 y O2 forman la sal de Friedel. El deterioro de las estructuras en ambientes marinos se produce por la debilitación de la matriz cementante y posterior corrosión de las armaduras que provocan un aumento de volumen en el interior y rotura de la matriz cementante por tensiones capilares. Otras reacciones que pueden producir estos efectos son árido-álcali y difusión de iones cloruro. La durabilidad de un hormigón también depende del tipo de cemento y su composición química (cementos con altos contenidos de adición son más resistentes), relación agua/cemento y contenido de cemento. La Norma UNE-EN 1504 que consta de 10 partes, define los productos para la protección y reparación de estructuras de hormigón, el control de calidad de los productos, propiedades físico-químicas y durables que deben cumplir. En esta Norma se referencian otras 65 normas que ofrecen los métodos de ensayo para la evaluación de los sistemas de reparación. En la segunda parte de esta Tesis se hizo un diseño de experimentos con diferentes morteros poliméricos (con concentraciones de polímero entre 0 y 25%), tomando como referencia un mortero control sin polímero, y se estudiaron sus propiedades físico-químicas, mecánicas y durables. Para mortero con baja proporción de polímero se recurre a sistemas monocomponentes y para concentraciones altas bicomponentes en la que el polímero está en dispersión acuosa. Las propiedades mecánicas medidas fueron: resistencia a compresión, resistencia a flexión, módulo de elasticidad, adherencia por tracción directa y expansión-retracción, todas ellas bajo normas UNE. Como ensayos de caracterización de la durabilidad: absorción capilar, resistencia a carbonatación y adherencia a tracción después de ciclos hielo-deshielo. El objeto de este estudio es seleccionar el mortero con mejor resultado general para posteriormente hacer una comparativa entre un mortero con polímero (cantidad optimizada) y un mortero sin polímero. Para seleccionar esa cantidad óptima de polímero a usar se han tenido en cuenta los siguientes criterios: el mortero debe tener una clasificación R4 en cuanto a prestaciones mecánicas al igual que para evaluar sus propiedades durables frente a los ciclos realizados, siempre teniendo en cuenta que la adición de polímero no puede ser elevada para hacer el mortero competitivo. De este estudio se obtuvieron las siguientes conclusiones generales: - Un mortero normalizado no cumple con propiedades para ser clasificado como R3 o R4. - Sin necesidad de polímero se puede obtener un mortero que cumpliría con R4 para gran parte de las características medidas - Es necesario usar relaciones a:c< 0.5 para conseguir morteros R4, - La adición de polímero mejora siempre la adherencia, abrasión, absorción capilar y resistencia a carbonatación - Las diferentes proporciones de polímero usadas siempre suponen una mejora tecnológica en propiedades mecánicas y de durabilidad. - El polímero no influye sobre la expansión y retracción del mortero. - La adherencia se mejora notablemente con el uso del polímero. - La presencia de polímero en los morteros mejoran las propiedades relacionadas con la acción del agua, por aumento del poder cementante y por lo tanto de la cohesión. El poder cementante disminuye la porosidad. Como consecuencia final de este estudio se determinó que la cantidad óptima de polímero para la segunda parte del estudio es 2.0-3.5%. La tercera parte consistió en el estudio comparativo de dos morteros: uno sin polímero (mortero A) y otro con la cantidad optimizada de polímero, concluida en la parte anterior (mortero B). Una vez definido el porcentaje de polímeros que mejor se adapta a los resultados, se plantea un nuevo esqueleto granular mejorado, tomando una nueva dosificación de tamaños de áridos, tanto para el mortero de referencia, como para el mortero con polímeros, y se procede a realizar los ensayos para su caracterización física, microestructural y de durabilidad, realizándose, además de los ensayos de la parte 1, mediciones de las propiedades microestructurales que se estudiaron a través de las técnicas de porosimetría de mercurio y microscopia electrónica de barrido (SEM); así como propiedades del mortero en estado fresco (consistencia, contenido de aire ocluido y tiempo final de fraguado). El uso del polímero frente a la no incorporación en la formulación del mortero, proporcionó al mismo de las siguientes ventajas: - Respecto a sus propiedades en estado fresco: El mortero B presentó mayor consistencia y menor cantidad de aire ocluido lo cual hace un mortero más trabajable y más dúctil al igual que más resistente porque al endurecer dejará menos huecos en su estructura interna y aumentará su durabilidad. Al tener también mayor tiempo de fraguado, pero no excesivo permite que la manejabilidad para puesta en obra sea mayor, - Respecto a sus propiedades mecánicas: Destacar la mejora en la adherencia. Es una de las principales propiedades que confiere el polímero a los morteros. Esta mayor adherencia revierte en una mejora de la adherencia al soporte, minimización de las posibles reacciones en la interfase hormigón-mortero y por lo tanto un aumento en la durabilidad de la reparación ejecutada con el mortero y por consecuencia del hormigón. - Respecto a propiedades microestructurales: la porosidad del mortero con polímero es menor y menor tamaño de poro critico susceptible de ser atacado por agentes externos causantes de deterioro. De los datos obtenidos por SEM no se observaron grandes diferencias - En cuanto a abrasión y absorción capilar el mortero B presentó mejor comportamiento como consecuencia de su menor porosidad y su estructura microscópica. - Por último el comportamiento frente al ataque de sulfatos y agua de mar, así como al frente de carbonatación, fue más resistente en el mortero con polímero por su menor permeabilidad y su menor porosidad. Para completar el estudio de esta tesis, y debido a la gran importancia que están tomando en la actualidad factores como la sostenibilidad se ha realizado un análisis de ciclo de vida de los dos morteros objeto de estudio de la segunda parte experimental.In recent years, the extended use of repair materials for buildings and structures made the development of repair mortars more and more technical. In the development of these mortars by producers, the use of polymers in the formulations is a key point, because sometimes this use is not justified when looking to the performance/price/application as a whole. This thesis is an exhaustive study to justify the use of these mortars as a response to the current growing demand for structural repair. The thesis is classified in three parts:The first part is the study of the state of the art of mortars and their constituents.In ancient times, widely used mortars were based on lime and gypsum. The Greeks and Romans developed the concept of lime mortars, introducing components such as pozzolans, hydraulic limes and marble dust as aggregates, giving very similar concrete mortars to the ones used currently. In the middle Age and Renaissance, the technology developed by the Romans was lost, due to the extensive use of stone in the civil, religious and defensive constructions. It was not until the 19th century, when J. Aspdin discovered the current cement as the main hydraulic compound. Finally in the 20th century, with the appearance of molecules such as styrene, melanin, vinyl chloride and polyester, the industry began to develop polymers which were added to the binder to form special "composites".The use of polymers in cementitious matrixes give properties to the mortar such as adhesion, Currently, the result of the polymer synthesis (polivynilacetate, styrene-butadiene, vynilacrylic and epoxy resins) is that mortars have increased resistance to water attack and therefore, they increase their durability since all reactions of deterioration are minimised (ice, humidity, biological attack,...). In the present study the polymer used was redispersible polymer powder. These polymers are encapsulated and when in contact with water, they are released from the capsule forming a gel.In the repair mortars, the only hydraulic compound is the cement and nowadays, this is the main constituent of building materials. The current trend is centered in the use of higher contents of additions (lime, pozzolana, fly ash, silica, silica fume...) in order to obtain more sustainable cements. Once the composition of mortars is analyzed, the technological improvement is centred in increasing the durability of the working life. Durability is defined as the ability to resist the action of the environment, chemical, physical, and biological attacks or any process that tends to its destruction. These processes depend on factors such as the concrete porosity and the environmental exposure. In terms of porosity, it be considered, the distribution of Macropores and mesopores and pores of the concrete structure, since not all of them are capable of causing the transportation of damaging agents, causing internal stresses on the same walls and destroying the cementing matrix.In general, deterioration processes are related to the action of water, either as direct agent or as a transport vehicle. Concrete durability also depends on the type of cement and its chemical composition (cement with high addition amounts are more resistant), water/cement ratio and cement content. The standard UNE-EN 1504 consists of 10 parts and defines the products for the protection and repair of concrete, the quality control of products, physical-chemical properties and durability. Other 65 standards that provide the test methods for the evaluation of repair systems are referenced in this standard. In the second part of this thesis there is a design of experiments with different polymer mortars (with concentrations of polymer between 0 and 25%), taking a control mortar without polymer as a reference and its physico-chemical, mechanical and durable properties were studied. For mortars with low proportion of polymer, 1 component systems are used (powder polymer) and for high polymer concentrations, water dispersion polymers are used. The mechanical properties measured were: compressive strength, flexural strength, modulus of elasticity, adhesion by direct traction and expansion-shrinkage, all of them under standards UNE. As a characterization of the durability, following tests are carried out: capillary absorption, resistance to carbonation and pull out adhesion after freeze-thaw cycles. The target of this study is to select the best mortar to make a comparison between mortars with polymer (optimized amount) and mortars without polymer. To select the optimum amount of polymer the following criteria have been considered: the mortar must have a classification R4 in terms of mechanical performance as well as in durability properties against the performed cycles, always bearing in mind that the addition of polymer cannot be too high to make the mortar competitive in price. The following general conclusions were obtained from this study: - A standard mortar does not fulfill the properties to be classified as R3 or R4 - Without polymer, a mortar may fulfill R4 for most of the measured characteristics. - It is necessary to use relations w/c ratio < 0.5 to get R4 mortars - The addition of polymer always improves adhesion, abrasion, capillary absorption and carbonation resistance - The different proportions of polymer used always improve the mechanical properties and durability. - The polymer has no influence on the expansion and shrinkage of the mortar - Adhesion is improved significantly with the use of polymer. - The presence of polymer in mortars improves the properties related to the action of the water, by the increase of the cement power and therefore the cohesion. The cementitious properties decrease the porosity. As final result of this study, it was determined that the optimum amount of polymer for the second part of the study is 2.0 - 3.5%. The third part is the comparative study between two mortars: one without polymer (A mortar) and another with the optimized amount of polymer, completed in the previous part (mortar B). Once the percentage of polymer is defined, a new granular skeleton is defined, with a new dosing of aggregate sizes, for both the reference mortar, the mortar with polymers, and the tests for physical, microstructural characterization and durability, are performed, as well as trials of part 1, measurements of the microstructural properties that were studied by scanning electron microscopy (SEM) and mercury porosimetry techniques; as well as properties of the mortar in fresh State (consistency, content of entrained air and final setting time). The use of polymer versus non polymer mortar, provided the following advantages: - In fresh state: mortar with polymer presented higher consistency and least amount of entrained air, which makes a mortar more workable and more ductile as well as more resistant because hardening will leave fewer gaps in its internal structure and increase its durability. Also allow it allows a better workability because of the longer (not excessive) setting time. - Regarding the mechanical properties: improvement in adhesion. It is one of the main properties which give the polymer to mortars. This higher adhesion results in an improvement of adhesion to the substrate, minimization of possible reactions at the concrete-mortar interface and therefore an increase in the durability of the repair carried out with mortar and concrete. - Respect to microstructural properties: the porosity of mortar with polymer is less and with smaller pore size, critical to be attacked by external agents causing deterioration. No major differences were observed from the data obtained by SEM - In terms of abrasion and capillary absorption, polymer mortar presented better performance as a result of its lower porosity and its microscopic structure. - Finally behavior against attack by sulfates and seawater, as well as to carbonation, was better in the mortar with polymer because of its lower permeability and its lower porosity. To complete the study, due to the great importance of sustainability for future market facts, the life cycle of the two mortars studied was analysed.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

Research on wide-bandgap intermediate band solar cells and development of experimental techniques for their characterization

El trabajo que ha dado lugar a esta Tesis Doctoral se enmarca en la invesitagación en células solares de banda intermedia (IBSCs, por sus siglas en inglés). Se trata de un nuevo concepto de célula solar que ofrece la posibilidad de alcanzar altas eficiencias de conversión fotovoltaica. Hasta ahora, se han demostrado de manera experimental los fundamentos de operación de las IBSCs; sin embargo, esto tan sólo has sido posible en condicines de baja temperatura. El concepto de banda intermedia (IB, por sus siglas en inglés) exige que haya desacoplamiento térmico entre la IB y las bandas de valencia y conducción (VB and CB, respectivamente, por sus siglas en inglés). Los materiales de IB actuales presentan un acoplamiento térmico demasiado fuerte entre la IB y una de las otras dos bandas, lo cual impide el correcto funcionamiento de las IBSCs a temperatura ambiente. En el caso particular de las IBSCs fabricadas con puntos cuánticos (QDs, por sus siglas en inglés) de InAs/GaAs - a día de hoy, la tecnología de IBSC más estudiada - , se produce un rápido intercambio de portadores entre la IB y la CB, por dos motivos: (1) una banda prohibida estrecha (< 0.2 eV) entre la IB y la CB, E^, y (2) la existencia de niveles electrónicos entre ellas. El motivo (1) implica, a su vez, que la máxima eficiencia alcanzable en estos dispositivos es inferior al límite teórico de la IBSC ideal, en la cual E^ = 0.71 eV. En este contexto, nuestro trabajo se centra en el estudio de IBSCs de alto gap (o banda prohibida) fabricadsas con QDs, o lo que es lo mismo, QD-IBSCs de alto gap. Hemos fabricado e investigado experimentalmente los primeros prototipos de QD-IBSC en los que se utiliza AlGaAs o InGaP para albergar QDs de InAs. En ellos demostramos une distribución de gaps mejorada con respecto al caso de InAs/GaAs. En concreto, hemos medido valores de E^ mayores que 0.4 eV. En los prototipos de InAs/AlGaAs, este incremento de E^ viene acompaado de un incremento, en más de 100 meV, de la energía de activación del escape térmico. Además, nuestros dispositivos de InAs/AlGaAs demuestran conversión a la alza de tensión; es decir, la producción de una tensión de circuito abierto mayor que la energía de los fotones (dividida por la carga del electrón) de un haz monocromático incidente, así como la preservación del voltaje a temperaura ambiente bajo iluminación de luz blanca concentrada. Asimismo, analizamos el potencial para detección infrarroja de los materiales de IB. Presentamos un nuevo concepto de fotodetector de infrarrojos, basado en la IB, que hemos llamado: fotodetector de infrarrojos activado ópticamente (OTIP, por sus siglas en inglés). Nuestro novedoso dispositivo se basa en un nuevo pricipio físico que permite que la detección de luz infrarroja sea conmutable (ON y OFF) mediante iluminación externa. Hemos fabricado un OTIP basado en QDs de InAs/AlGaAs con el que demostramos fotodetección, bajo incidencia normal, en el rango 2-6/xm, activada ópticamente por un diodoe emisor de luz de 590 nm. El estudio teórico del mecanismo de detección asistido por la IB en el OTIP nos lleva a poner en cuestión la asunción de quasi-niveles de Fermi planos en la zona de carga del espacio de una célula solar. Apoyados por simuaciones a nivel de dispositivo, demostramos y explicamos por qué esta asunción no es válida en condiciones de corto-circuito e iluminación. También llevamos a cabo estudios experimentales en QD-IBSCs de InAs/AlGaAs con la finalidad de ampliar el conocimiento sobre algunos aspectos de estos dispositivos que no han sido tratados aun. En particular, analizamos el impacto que tiene el uso de capas de disminución de campo (FDLs, por sus siglas en inglés), demostrando su eficiencia para evitar el escape por túnel de portadores desde el QD al material anfitrión. Analizamos la relación existente entre el escape por túnel y la preservación del voltaje, y proponemos las medidas de eficiencia cuántica en función de la tensión como una herramienta útil para evaluar la limitación del voltaje relacionada con el túnel en QD-IBSCs. Además, realizamos medidas de luminiscencia en función de la temperatura en muestras de InAs/GaAs y verificamos que los resltados obtenidos están en coherencia con la separación de los quasi-niveles de Fermi de la IB y la CB a baja temperatura. Con objeto de contribuir a la capacidad de fabricación y caracterización del Instituto de Energía Solar de la Universidad Politécnica de Madrid (IES-UPM), hemos participado en la instalación y puesta en marcha de un reactor de epitaxia de haz molecular (MBE, por sus siglas en inglés) y el desarrollo de un equipo de caracterización de foto y electroluminiscencia. Utilizando dicho reactor MBE, hemos crecido, y posteriormente caracterizado, la primera QD-IBSC enteramente fabricada en el IES-UPM. ABSTRACT The constituent work of this Thesis is framed in the research on intermediate band solar cells (IBSCs). This concept offers the possibility of achieving devices with high photovoltaic-conversion efficiency. Up to now, the fundamentals of operation of IBSCs have been demonstrated experimentally; however, this has only been possible at low temperatures. The intermediate band (IB) concept demands thermal decoupling between the IB and the valence and conduction bands. Stateof- the-art IB materials exhibit a too strong thermal coupling between the IB and one of the other two bands, which prevents the proper operation of IBSCs at room temperature. In the particular case of InAs/GaAs quantum-dot (QD) IBSCs - as of today, the most widely studied IBSC technology - , there exist fast thermal carrier exchange between the IB and the conduction band (CB), for two reasons: (1) a narrow (< 0.2 eV) energy gap between the IB and the CB, EL, and (2) the existence of multiple electronic levels between them. Reason (1) also implies that maximum achievable efficiency is below the theoretical limit for the ideal IBSC, in which EL = 0.71 eV. In this context, our work focuses on the study of wide-bandgap QD-IBSCs. We have fabricated and experimentally investigated the first QD-IBSC prototypes in which AlGaAs or InGaP is the host material for the InAs QDs. We demonstrate an improved bandgap distribution, compared to the InAs/GaAs case, in our wide-bandgap devices. In particular, we have measured values of EL higher than 0.4 eV. In the case of the AlGaAs prototypes, the increase in EL comes with an increase of more than 100 meV of the activation energy of the thermal carrier escape. In addition, in our InAs/AlGaAs devices, we demonstrate voltage up-conversion; i. e., the production of an open-circuit voltage larger than the photon energy (divided by the electron charge) of the incident monochromatic beam, and the achievement of voltage preservation at room temperature under concentrated white-light illumination. We also analyze the potential of an IB material for infrared detection. We present a IB-based new concept of infrared photodetector that we have called the optically triggered infrared photodetector (OTIP). Our novel device is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. We have fabricated an OTIP based on InAs/AlGaAs QDs with which we demonstrate normal incidence photodetection in the 2-6 /xm range optically triggered by a 590 nm light-emitting diode. The theoretical study of the IB-assisted detection mechanism in the OTIP leads us to questioning the assumption of flat quasi-Fermi levels in the space-charge region of a solar cell. Based on device simulations, we prove and explain why this assumption is not valid under short-circuit and illumination conditions. We perform new experimental studies on InAs/GaAs QD-IBSC prototypes in order to gain knowledge on yet unexplored aspects of the performance of these devices. Specifically, we analyze the impact of the use of field-damping layers, and demonstrate this technique to be efficient for avoiding tunnel carrier escape from the QDs to the host material. We analyze the relationship between tunnel escape and voltage preservation, and propose voltage-dependent quantum efficiency measurements as an useful technique for assessing the tunneling-related limitation to the voltage preservation of QD-IBSC prototypes. Moreover, we perform temperature-dependent luminescence studies on InAs/GaAs samples and verify that the results are consistent with a split of the quasi-Fermi levels for the CB and the IB at low temperature. In order to contribute to the fabrication and characterization capabilities of the Solar Energy Institute of the Universidad Polite´cnica de Madrid (IES-UPM), we have participated in the installation and start-up of an molecular beam epitaxy (MBE) reactor and the development of a photo and electroluminescence characterization set-up. Using the MBE reactor, we have manufactured and characterized the first QD-IBSC fully fabricated at the IES-UPM.

Mechanical characterization of GdBCO/Ag and YBCO single grains fabricated by top-seeded melt growth at 77 and 300 K

YBaCuO and GdBaCuO + 15 wt% Ag large, single-grain, bulk superconductors have been fabricated via the top-seeded, melt-growth (TSMG) process using a generic NdBCO seed. The mechanical behavior of both materials has been investigated by means of three-point bending (TPB) and transversal tensile tests at 77 and 300 K. The strength, fracture toughness and hardness of the samples were studied for two directions of applied load to obtain comprehensive information about the effect of microstructural anisotropy on the macroscopic and microscopic mechanical properties of these technologically important materials. Splitting (Brazilian) tests were carried out on as-melt-processed cylindrical samples following a standard oxygenation process and with the load applied parallel to the growth-facet lines characteristic of the TSMG process. In addition, the elastic modulus of each material was measured by three different techniques and related to the microstructure of each sample using optical microscopy. The results show that both the mechanical properties and the elastic modulus of both YBCO and GdBCP/Ag are improved at 77 K. However, the GdBCO/Ag samples are less anisotropic and exhibit better mechanical behavior due to the presence of silver particles in the bulk, superconducting matrix. The splitting tensile strength was determined at 77 K and both materials were found to exhibit similar behavior, independently of their differences in microstructure.