Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs
Data(s) |
2011
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Resumo |
Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the ID and gm levels. DC characterization at high temperature has demonstrated that ID and gm decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects. |
Formato |
application/pdf |
Identificador | |
Idioma(s) |
eng |
Publicador |
E.T.S.I. Telecomunicación (UPM) |
Relação |
http://oa.upm.es/12913/2/INVE_MEM_2011_108197.pdf http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5744183 info:eu-repo/semantics/altIdentifier/doi/null |
Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
Fonte |
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 | 8th Spanish Conference on Electron Devices, CDE'2011 | 08/02/2011 - 11/02/2011 | Palma de Mallorca, España |
Palavras-Chave | #Telecomunicaciones #Electrónica |
Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |