镍-金属氢化物电池新型负极材料研究

贮氢合金是镍一金属氢化物电池的核心材料，其综合性能的改善是提高镍一金属氢化物电池性能的关键。本研究以探索镍一金属氢化物电池新型负极材料为目的，以非ABS型贮氢合金为研究对象，采用X射线衍射、Rietveld分析、恒电流充／放电、P-C-T曲线及线性微极化等方法，从基础和潜在应用等方面详细研究了非ABS型合金的结构与电化学性能。对La-Ni体系中非ABS型二元合金的结构和电化学性能的研究表明，LaNi_(228)具有最优异的高倍率充电性能；La_2Ni_7合金电极的高倍率放电性能最佳；La_7Ni_3在低温条件下表现出较好的放电性能。然而，所有得到的La-Ni合金电极容量远低于其理论容量。因此，必须通过进一步研究，如元素取代、热处理、表面处理等来提高其电化学容量。对RENi_3（RE＝La，Ce，Pr，Nd，Sm，Gd，Th，Dy，Ho，Er，Y）研究表明：YNi_3合金因其具有最大的晶胞体积，最小的密度，而表现出最好的高倍率充／放电性能及低温放电性能，但其高温放电性能需要进一步提高，以满足实际应用的要求。用Al、Mn、Ti、Fe、Sn、Si、Cr、M。、Cu和Co十种元素取代Ni进行了大量的配方筛选工作。得到了大量的实验数据，并发现LaNi_(3.7)Al_(0.3)合金电极电化学放电容量最高，达290.8mAh／g；LaNi_(3.7)Mo_(0.3)合金电极的高倍率放电性能最好，在以4200mA/g的电流密度下进行放电时，其放电容量仍达到145.8mA/g；而I镍一金属氢化物电池新型负极材料研究镍一金属氢化物电池新型负极材料的研究Al的取代会使合金电极性能对温度不敏感。以我们的实验为基础，进一步进行合金配方的微调，具有可能开发出具有实用价值的贮氢合金的潜力。在Ar保护下用真空电弧炉熔炼合成了四种Lal一xMg：（NICoAI）3．6体系贮氢合金，制成姐卜Ni电池负极，通过恒电流充／放电方法研究了其电化学性能。结果表明：Lal一xMg：（NiCoAI）3．6体系金属氢化物电极较容易活化，室温下具有优异的高倍率放电性能，在以4200mA／g电流放电时，La卜汉gx（NICoAI）36合金电极的放电容量是ABS型合金电极的3倍，达152hah／g，显示出良好的动力学特性。R，入1兮Ni（R：raree田劝，Ca，Y）型合金因能吸引／释放1．8一1．87％质量的HZ而被认为是种很有希望的贮氢合金。但其吸／放氢平台过高，循环寿命短。如何提高Rh厦g剑19循环稳定性是这类合金能否成功商业化的关键。研究发现，Co能够显著提高ABS型合金电极的循环寿命，但其价格太贵。人们发现Al在提高电极寿命方面与C。有类似的作用，但Al元素的添加因其在碱性电解质的作用下在电极表面易生成致密的氧化膜而不利于氢的扩散，进而对高倍率放电性能不利。入物在提高电极表面活性，改善其高倍率放电性方面作用明显。本工作在前面的基础上用Al和MO联合取代Ni，以期待同时改善La一Mg一Ni一Co合金的循环稳定性和高倍率放电性能。详细研究了La07Mg03Ni切一（A105Mo05）x（x：o，0．2，0．4，0．6，0．8）系列贮氢合金的晶体结构和电化学性能。X射线衍射及Rietveld分析发现：所有La07Mg03Ni4D一x（A105Mo05）x合金均为包含PuNi3结构的六方LaZMgNig相、CaCus结构的LaNis主相及L匆Ni7，LaN儿和LaNi杂相的多相结构。合金中La（La，Mg）剑19相及LaNis相的晶格参数及晶胞体积均随合金中Al和Mo含量的增加而增大。用电化学方法测得的RC一T曲线显示：Al和'fo部分取代Ni降低了氢的平台压力。随合金中Al和Mo含量的增加，电极的电化学容量从329．7（x＝0）、徽橇毓孺鑫盆一11瀚加至365．物A吨（＝0．6）后又降低到351．3毗吨（x＝0．8）。当以1200m刀g的电流密度进行放电时，其I｛RD从62．0％沁0）增加到82．1％沁0．8）。线性微极化结果显示：Al和Mo的添加增大了合金表面的交换电流密度，因而也改善了合金电极的高倍率放电性能。另外，Al和M。取代合金中的Ni增大了氢在电极合金中的扩散系数（D），改善了La07Mgo3Ni4。一x（Alo5M。。5）x（X＝o，0．2，0．4，0．6，0．8）合金电极的低温放电性能（LTD）。

Stoichiometric defects in semi-insulating GaAs

The influences of arsenic interstitials and dislocations on the lattice parameters of undoped semi-insulating (SI) GaAs single crystals were analyzed. It was shown that the dislocations in such crystals serve as effective gettering sites for arsenic interstitials due to the deformation energy of dislocations. The average excess arsenic in GaAs epilayers grown by molecular-beam epitaxy (MBE) at low temperatures (LT) is about 1%, and the lattice parameters of these epilayers are larger than those of liquid-encapsulated Czochralski-grown (LEG) SI-GaAs by about 0.1%. The atomic ratio, [As]/([Ga] + [As]), in SI-GaAs grown by low-pressure (LP) LEC is the nearest to the strict stoichiometry compared with those grown by high-pressure (HP) LEC and vertical gradient freeze (VGF). After multiple wafer annealing (MWA), the crystals grown by HPLEC become closer to be strictly stoichiometric.

Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors

Neutron-irradiated high-resistivity silicon detectors have been subjected to elevated temperature annealing (ETA). It has been found that both detector full depletion voltage and leakage current exhibit abnormal annealing (or ''reverse annealing'') behaviour for highly irradiated detectors: increase with ETA. Laser induced current measurements indicate a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) data show that the dominant effect is the increase of a level at 0.39 eV below the conduction band (E(c) - 0.39 eV) or a level above the valence band (E(v) + 0.39 eV). Candidates tentatively identified for this level are the singly charged double vacancy (V-V-) level at E(c) - 0.39 eV, the carbon interstitial-oxygen interstitial (C-i-O-i) level at E(v) + 0.36 eV, and/or the tri-vacancy-oxygen center (V3O) at E(v) + 0.40 eV.

Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs

We have measured low-temperature photoluminescence (PL) and optical absorption spectra of an In0.2Ga0.8As/GaAs multiple quantum well (MQW) structure at pressures up to 8 GPa. Below 4.9 GPa, PL shows only the emission of the n = 1 heavy-hole (HH) exciton. Three new X-related PL bands appear at higher pressures. They are assigned to spatially indirect (type-II) and direct (type-I) transitions from X(Z) states in GaAs and X(XY) valleys of InGaAs, respectively, to the HH subband of the wells. From the PL data we obtain a valence band offset of 80 meV for the strained In0.2Ga0.8As/GaAs MQW system. Absorption spectra show three features corresponding to direct exciton transitions in the quantum wells. In the pressure range of 4.5 to 5.5 GPa an additional pronounced feature is apparent in absorption, which is attributed to the pseudo-direct transition between a HH subband and the folded X(Z) states of the wells. This gives the first clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance at the heterointerfaces in MQWs.

纳米硅薄膜光学性质的测定与研究

通过测定纳米硅薄膜的透射谱,建立计算模型计算得出薄膜样品的折射率、厚度、吸收系数和光能隙.计算结果表明这种半导体材料在620 nm波长附近的折射率约为3.4,计算得到的厚度与用台阶仪测量的结果吻合很好.在620 nm波长附近的吸收系数介于吸收系数较小的晶体硅与吸收系数较大的非晶硅之间,光能隙约为1.6 eV,两者都随晶态含量增大而呈减小趋势.

掺杂InGaAs/InAlAs单量子阱中电子对称态和反对称态磁输运研究

利用变温Hall测量研究了重掺杂InGaAs/InAlAs单量子阱中二维电子气,发现在量子阱中由于存在电子对称态和反对称态导致纵向电阻出现拍频现象.通过分析拍频节点位置,得到电子对称态和反对称态之间的能级间距为4meV.此外,通过迁移率谱方法和多载流子拟合过程研究了不同迁移率电子的浓度和迁移率随温度的变化关系.

具有AIN膜的半导体激光器的实验研究

于2010-11-23批量导入

Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m

A normal-incident SiGe/Si multiple quantum wells (MQWs) photodetector was reported. The structure and fabrication process of the photodetector were introduced. The photocurrent spectra measurement showed that the response spectra was expanded to 1.3 mu m wavelength. The quantum efficiency of the photodetector was 0.1% at 1.3 mu m and 20% at 0.95 mu m.