Digital radio distribution system over multiple cabling types

This paper demonstrates a novel digital radio distribution system able to transmit not only over optical fibres and coaxial cables but also over twisted pair cables. The digitised RF signal is compressed for maximum transmission efficiency in a way that allows for integral self-learning algorithms to be introduced for multi-service applications. © 2013 IEEE.

Residual plastids of bleached mutants of Euglena gracilis and their effects on the expression of nucleus-encoded genes

Bleached mutants of Euglena gracilis were obtained by treatment with ofloxacin (Ofl) and streptomycin (Sm) respectively. As shown by electron microscopy, the residual plastids contain prothylakoids in an Ofl mutant, and the highly developed and tightly stacked membranous structure found in cells of two Sm, mutants. Nine genes of the plastid genome were examined with PCR, showing that ribosomal protein genes and most other plastid genes were lost in all but one Sm mutant. Using differential display and RT-PCR, it was shown that chloroplast degeneration could cause changes in transcription of certain nucleus-encoded genes during heterotrophic growth in darkness.

Marine species of Ainudrilus and Heterodrilus (Oligochaeta : Tubificidae : Rhyacodrilinae) from Hainan Island in southern China

Six species of Rhyacodrilinae (Oligochaeta: Tubificidae) are reported from intertidal and shallow water subtidal habitats around Hainan Island in southern China. Four species are new to science: Ainudrilus pauciseta n. sp., Heterodrilus chenianus n. sp., Heterodrilus nudus n. sp., and Heterodrilus uniformis n. sp. Japanese material of Ainudrilus lutulentus (Erseus, 1984) is also briefly described. Hitherto, 27 species belonging to Tubificidae have been recorded from Hainan.

Revision of the cyprinid genus Placocheilus Wu, 1977 in China, with description of a new species from Yunnan

Placocheilus is re-diagnosed on the basis of oromandibular structures compared to those of closely related groups. It is represented in China by three species restricted to Yunnan, namely P. caudofasciatus from the Tengtiaohe River (Nam Na), P. cryptonemus from the Nujiang Rive ( upper Salween River basin), and P. robustus, herein described as a new species from the Yuanjiang River ( Red River basin). P. robustus n. sp. is differentiated from its congeners in having a stout caudal peduncle ( depth 72.4-82.5% of its length) and the medium-sized scaleless midventral region of belly extended slightly beyond halfway from the pectoral- to pelvic-fin origin. It is further distinguished from P. caudofasciatus in having a coarsely crenulated rostral fold with 18-23 indentations on its distal margin and a smaller mental adhesive disc ( length 66.7-71.4% of its width and 37.0-43.1% of the head length).

Effects of feeding rate on growth performance of white sturgeon (Acipenser transmontanus) larvae

Four 1-week trials were conducted to determine the effects of feeding rates on growth performance and body proximate composition of white sturgeon larvae during each of the first 4 weeks after initiation of feeding. Feeding rates (% body weight day(-1)) were 10, 20, 30, 40, 50, and 60 for trial I; 5, 10, 15, 20, 25, and 30 for trial II; and 2.5, 5.0, 7.5, 10.5, 12.5, and 15.0 for trials III and TV Four tanks with 200 larvae each were randomly assigned to each of the six feeding rates. Average initial body weights of the larvae were 49, 94, 180, and 366 mg, respectively, for trials I-IV. The larvae were kept at 19-20 degreesC in circular tanks and fed continuously one of two commercial salmonid soft-moist feeds using automatic feeders. Proximate composition (%) of the feeds for trials I-III and IV were 13.9 and 14.9 moisture, 52.5 and 50.0 crude protein, 10.3 and 12.9 crude fat, and 8.1 and 8.7 ash, respectively. Except mortality in trial I, gain per food fed in trial III, and body ash in all trials, growth performance and body composition were significantly (P<0.05) affected by all feeding rates. Broken line analysis on specific growth rates indicated the optimum feeding rates of white sturgeon larvae to be 26%, 13%, 11%, and 6% body weight day-respectively, for weeks 1, 2, 3, and 4 after initiation of feeding. (C) 2003 Elsevier Science B.V. All rights reserved.

Phylogenetic relationships among six species of Epistylis inferred from 18S-ITS1 sequences

Phylogenetic relationships among six species of Epistylis (i.e. E. plicatilis, E. urceolata, E. chrysemydis, E. hentscheli, E. wenrichi, and E, galea) were investigated using sequences of the first internal transcribed spacer region (ITS-1) of ribosomal DNA (rDNA). Amplified rDNA fragment sequences consisted of 215 or 217 bases of the flanking 18S and 5.8S regions, and the entire ITS-1 region (from 145 to 155 bases). There were more than 33 variable bases between E. galea and the other five species in both the 18S region and the ITS-1 region. The affiliation of them was assessed using Neighbor-joining (NJ), maximum parsimony (MP) and maximum likelihood (ML) analyses. In all the NJ, MP and ML analyses E. galea, whose macronucleic position and shape are distinctly different from those of the other five species, was probably diverged from the ancestor of Epistylis earlier than the other five species. The topology in which E. plicatilis and E, hentscheli formed a strongly supported sister clade to E. urceolata, E. chrysemydis, and E. wenrichi was consistent with variations in the thickness of the peristomial lip. We concluded that the macronucleus and peristomial lip might be the important phylogenetic characteristics within the genus Epistylis.

The effect of food concentration on the life history of three types of Brachionus calyciflorus females

The effect of food concentration on the life history of three types of Brachionus calciflorus females (amictic, unfertilized mictic and fertilized mictic female) was studied with replicated individual cultures at 25 degrees and at four food concentrations (1.5, 3.0, 6.0 and 9.0 x 10(6) cells mL(-1)) of Scenedesmus obliquus. There were highly significant effects of both food concentration and female type, independently and in interaction on the duration of juvenile period of the rotifer, but neither a;ere the effects on the duration of post-reproductive period and mean life-span. The duration of juvenile period of unfertilized mictic female at the food concentration of 9.0 x 10(6) cells mL(-1) was the longest among all the food concentration-female type combinations. Both food concentration and female type influenced significantly the duration of reproductive period and the number of eggs produced by each type of female per life cycle, respectively. There was, however, no significant interaction between food level and female type. Among the three types of females, the number of eggs produced by an unfertilized mictic female was the largest. and that of a fertilized mictic female was the smallest.

Rotifera recorded from China, 1893-1997, with remarks on their composition and distribution

A search of the literature on rotifers recorded from China, includes today 477 valid species names and 42 subspecies or infrasubspecific variants in 84 genera and 28 families recorded since 1893. Chinese rotifera research is reviewed, and all recorded species are listed with current taxonomic status and their first localities in China. Most of the named taxa are widely distributed or cosmopolitan, with only a small number (about 3%) possibly restricted to China. This fauna exhibits 15 endemic taxa. The composition and distribution of Chinese Rotifera are briefly analyzed. It is likely that considerably more rotifers remain to be described from China as further study to be carried on and taxonomic resolution improves.

Paired interference 3-dB coupler based on SOI rib waveguides with anisotropic chemical wet etching

A 3-dB paired interference (PI) optical coupler in silicon-on-insulator (SOI) based on rib waveguides with trapezoidal cross section was designed with simulation by a modified finite-difference beam propagation method (FD-BPM) and fabricated by potassium hydroxide (KOH) anisotropic chemical wet etching. Theoretically, tolerances of width, length, and port distance are more than 1, 100, and 1 mu m, respectively. Smooth interface was obtained with the propagation loss of 1.1 dB/cm at the wavelength of 1.55 mu m. The coupler has a good uniformity of 0.2 dB and low excess loss of less than 2 dB.

In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate

Thin GaAs/AlAs and GaAs/GaAs buffer layer structure have been fabricated on the GaAs(001) substrate. The top GaAs buffer layer is decoupled from the host substrate by introduction of a low temperature thin interlayer (AlAs or GaAs), which was mechanically behaved like the compliant substrate. Four hundred nanometer In0.25Ga0.75As films were grown on these substrates and the traditional substrate directly. Photoluminescence (PL), double-crystal X-ray diffraction (DCXRD) and atomic force microscopy (AFM) measurements were used to estimate the quality of the In0.25Ga0.75As layer and the compliant effects of the low temperature buffer layer. All the measurements shown that the qualities of epilayer have been improved and the substrate have been deteriorated severely. The growth technique of the thin GaAs/AlAs structure was found to be simple but very powerful for heteroepitaxy. (C) 2003 Elsevier Science B.V All rights reserved.

Numerical simulation of nc-Si : H/c-Si heterojunction solar cells

AMPS simulator, which was developed by Pennsylvania State University, has been used to simulate photovoltaic performances of nc-Si:H/c-Si solar cells. It is shown that interface states are essential factors prominently influencing open circuit voltages (V-OC) and fill factors (FF) of these structured solar cells. Short circuit current density (J(SC)) or spectral response seems more sensitive to the thickness of intrinsic a-Si:H buffer layers inserted into n(+)-nc-Si:H layer and p-c-Si substrates. Impacts of bandgap offset on solar cell performances have also been analyzed. As DeltaE(C) increases, degradation of VOC and FF owing to interface states are dramatically recovered. This implies that the interface state cannot merely be regarded as carrier recombination centres, and impacts of interfacial layer on devices need further investigation. Theoretical maximum efficiency of up to 31.17% (AM1.5,100mW/cm(2), 0.40-1.1mum) has been obtained with BSF structure, idealized light-trapping effect(R-F=0, R-B=1) and no interface states.

Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells

Optical transient current spectroscopy (OTCS), photoluminescence (PL) spectroscopy and excitonic electroabsorption spectroscopy have been used to investigate the evolution of defects in the low-temperature grown GaAs/AlGaAs multiple quantum well structures during the postgrowth rapid thermal annealing. The sample was grown at 350 degrees C by molecular beam epitaxy on miscut (3.4 degrees off (001) towards (111)A) (001) GaAs substrate. After growth, the sample was subjected to 30s rapid thermal annealing in the range of 500-800 degrees C. It is found that the integrated PL intensity first decreases with the annealing temperature, then gets a minimum at 600 degrees C and finally recovers at higher temperatures. OTCS measurement shows that besides As,, antisites and arsenic clusters, there are several relatively shallower deep levels with excitation energies less than 0.3 eV in the as-grown and 500 degrees C-annealed samples. Above 600 degrees C, OTCS signals from As,, antisites and shallower deep levels become weaker, indicating the decrease of these defects. It is argued that the excess arsenic atoms group together to form arsenic clusters during annealing. (C) 2000 Elsevier Science B.V. All rights reserved.

Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy

Deep levels in undoped GaN materials grown by modified molecular beam epitaxy (MBE) are investigated by photoluminescence (PL) and optical quenching of photoconductivity measurements. A broad band which extends from 2.1 to 3.0 eV with a maximum at about 2.7 eV is observed, and four prominent quenching bands were found located at 2.18, 2.40, 2.71, and 2.78 eV above the valence band, respectively. These levels are attributed to four holes trap levels existence in the material. The defects cannot be firmly identified at present. (C) 2000 Elsevier Science B.V, All rights reserved.

X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures

An X-ray diffraction method, estimating the strain relaxation in an ultrathin layer, has been discussed by using kinematic and dynamical X-ray diffraction (XRD) theory. The characteristic parameter Delta Omega, used as the criterion of the strain relaxation in ultrathin layers, is deduced theoretically. It reveals that Delta Omega should be independent of the layer thickness in a coherently strained layer. By this method, we characterized our ultrathin GaNxAs1-x samples with N contents up to 5%. XRD measurements show that our GaNxAs1-x layers are coherently strained on GaAs even for such a large amount of N. Furthermore, a series of GaNxAs1-x samples with same N contents but different layer thicknesses were also characterized. It was found that the critical thickness (L-c) of GaNAs in the GaAs/GaNAs/GaAs structures determined by XRD measurement was 10 times smaller than the theoretical predictions based on the Matthews and Blakeslee model. This result was also confirmed by in situ observation of reflection high-energy electron diffraction (RHEED) and photoluminescence (PL) measurements. RHEED observation showed that the growth mode of GaNAs layer changed from 2D- to 3D-mode as the layer thickness exceeded L-c. PL measurements showed that the optical properties of GaNAs layers deteriorated rapidly as the layer thickness exceeded L-c. (C) 2000 Elsevier Science B.V. All rights reserved.

Influence of precipitates on GaN epilayer quality

GaN epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive X-ray spectroscopy and energy dispersive S-ray spectroscopy. Precipitates were observed to mainly consist of O impurity whose strengths were weaker than surrounding matrix. The precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. The larger precipitates often joined to cracks in the TEM specimens. The crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. Yellow luminescence of the epilayers was imaged by cathodoluminescence. The distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (C) 2000 Elsevier Science S.A, All rights reserved.