963 resultados para Si-GaAs
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Tin dioxide (SnO2) thin films doped with Eu3+, are deposited by the sol-gel-dip-coating process on top of GaAs films, which is deposited by resistive evaporation on glass substrate. This heterojunction assembly presents luminescence from the rare-earth ion, unlike the SnO2 deposition directly on a glass substrate, where emissions from the Eu3+ transitions are absent. The Eu3+ transitions are clearly identified and are similar to the observation on SnO2 pressed powder (pellets), thermally treated at much higher temperatures. However, in the form of heterojunction films, the Eu emission comes along a broad band, located at higher energy compared to Eu3+ transitions, which is blue-shifted as the thermal annealing temperature increases. The size of nanocrystallites points toward quantum confinement or electron transfer between oxygen vacancies, originated from the disorder in the material, and trivalent rare-earth ions, which present acceptor-like character in this matrix. This electron transfer may relax for higher temperatures in the case of pellets, and the broad band is eliminated.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Pós-graduação em Ciência e Tecnologia de Materiais - FC
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Pós-graduação em Educação - FFC
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Pós-graduação em Direito - FCHS
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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O principal objetivo desse trabalho é investigar a influência dos parâmetros térmicos velocidade de solidificação (VL) e taxa de resfriamento (TR), nos espaçamentos dendríticos primários (λ1) da liga hipoeutética Al-7%Si, durante a solidificação direcional horizontal, em regime transiente. Os valores de λ1 foram medidos ao longo do comprimento do lingote e correlacionados com esses parâmetros. A variação dos espaçamentos dendríticos estudados é expressa por meio de funções na forma de potência de VLe TRdadas, respectivamente, por λ1= 55(VL)-1.1e λ1= 212 (TR)-0.55. Um estudo comparativo é realizado entre os resultados encontrados nesse trabalho e aqueles obtidos para a mesma liga quando solidificada direcionalmente nos sistemas verticais ascendente e descendente, sob as mesmas condições assumidas. Finalmente, os resultados experimentais obtidos são comparados com valores fornecidos por alguns modelos teóricos propostos na literatura para analisar espaçamentos dendríticos primários.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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This work investigated the effect of gallium arsenide (GaAs) irradiation (power: 5 mW; intensity: 77.14 mW/cm(2), spot: 0.07 cm(2)) on regenerating skeletal muscles damaged by crotoxin (CTX). Male C57Bl6 mice were divided into six groups (n = 5 each): control, treated only with laser at doses of 1.5 J or 3 J, CTX-injured and, CTX-injured and treated with laser at doses of 1.5 J or 3 J. The injured groups received a CTX injection into the tibialis anterior (TA) muscle. After 3 days, TA muscles were submitted to GaAs irradiation at doses of 1.5 or 3 J (once a day, during 5 days) and were killed on the eighth day. Muscle histological sections were stained with hematoxylin and eosin (H&E) in order to determine the myofiber cross-sectional area (CSA), the previously injured muscle area (PIMA) and the area density of connective tissue. The gene expression of MyoD and myogenin was detected by real-time PCR. GaAs laser at a dose of 3 J, but not 1.5 J, significantly increased the CSA of regenerating myofibers and reduced the PIMA and the area density of intramuscular connective tissue of CTX-injured muscles. MyoD gene expression increased in the injured group treated with GaAs laser at a dose of 1.5 J. The CTX-injured, 3-J GaAs laser-treated, and the CTX-injured and treated with 3-J laser groups showed an increase in myogenin gene expression when compared to the control group. Our results suggest that GaAs laser treatment at a dose of 3 J improves skeletal muscle regeneration by accelerating the recovery of myofiber mass.
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In this work, the energy response functions of Si(Li), SDD and CdTe detectors were studied in the mammographic energy range through Monte Carlo simulation. The code was modified to take into account carrier transport effects and the finite detector energy resolution. The results obtained show that all detectors exhibit good energy response at low energies. The most important corrections for each detector were discussed, and the corrected mammographic x-ray spectra obtained with each one were compared. Results showed that all detectors provided similar corrected spectra, and, therefore, they could be used to accurate mammographic x-ray spectroscopy. Nevertheless, the SDD is particularly suitable for clinic mammographic x-ray spectroscopy due to the easier correction procedure and portability. (C) 2011 Elsevier Ltd. All rights reserved.