905 resultados para Raúl Scalabrini Ortiz


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We develop a finite-element method for the simulation of dynamic fracture and fragmentation of thin-shells. The shell is spatially discretized with subdivision shell elements and the fracture along the element edges is modeled with a cohesive law. In order to follow the propagation and branching of cracks, subdivision shell elements are pre-fractured ab initio and the crack opening is constrained prior to crack nucleation. This approach allows for shell fracture in an in-plane tearing mode, a shearing mode, or a bending of hinge mode. The good performance of the method is demonstrated through the simulation of petalling failure experiments in aluminum plates. © 2005 Elsevier B.V. All rights reserved.

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1997 年5~ 8 月至1998 年4~ 8 月, 对昆明地区的花卉害虫及天敌进行了考 察和标本采集, 共采到花卉害虫及天敌标本4500 多号, 经鉴定分14 目, 65 科, 158 属, 205 种。标本保存在中国科学院昆明动物研究所。

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Este es un homenaje realizado bajo mi entera responsabilidad. En mi opinión no puede cerrarse la edición de ProBiota sin publicar un número sobre quien fue su alma mater. En lo personal, hacedor de un humor irónico increíble, aunque melancólico, con tendencia al abatimiento y a hacerse responsable por todo. Mediador, proclive a “poner la oreja”, con actitud democrática hacia sus laderos, otorgando una prudente libertad de acción a quienes trabajaron o trabajan bajo su jefatura. Fiel simpatizante de River Plate, fan de Clint Eastwood y admirador incondicional de Raúl A. Ringuelet a quien estará eternamente agradecido. Si tuviera que definirlo profesionalmente, al margen de su labor académica formal, diría que es un promotor, un luchador y un historiador innato. Generador de ideas, siempre intentó reunir a aquellos científicos de trayectoria con los jóvenes iniciados en el camino de las ciencias, impulsando el trabajo en equipo. Además de su producción a nivel de su especialidad, promocionó el rescate de trabajos ya editados digitalizándolos con el fin de ponerlos a disposición de todo interesado y despertar el interés de quienes no los conocían, especialmente las publicaciones “incunables” como él las denomina. Poseedor de un espíritu inquieto y motivador, en su camino quedaron algunos intentos frustrados por circunstancias ajenas, pero a su vez, muchísimos logros con aire renovador e integrador y con una marcada originalidad. Sería interesante y necesario que alguien más con parecida inquietud, continuara gran parte de esos logros para que no quedaran truncos desperdiciando en parte tanto esfuerzo y constancia. Sólo resta comentar que aunque a veces estuvimos en veredas opuestas siempre nos tendimos la mano en apoyo mutuo. Fuiste mi mejor jefe. Gracias Hugo! Justina Ponte Gómez

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目的:探索以Lentivirus为载体,构建同时携带并表达多基因的基因工程人胚神经干细胞(hum an neu鄄ral stem cell,hNSC)的可行性,为脊髓损伤治疗的研究提供材料。方法:培养和鉴定hNSC;用携带绿色荧光蛋白(green fluorescence protein,GFP)和神经营养因子-3(neurotrophic factor-3,NT-3)的Lentivirus转染hNSC;用荧光显微镜观察、鼠胚背根神经结培养(dorsal root ganglion,DRG)和Slot blot等方法检测基因工程hNSC的多基因表达情况。结果:培养获得了大量的hNSC;荧光显微镜观察到几乎100%的hNSC表达GFP;基因工程hNSC的培养液能促使大鼠DRG旺盛生长;Slot blot检测到基因工程hNSC能高效分泌NT-3蛋白。结论:以Lentivirus为载体能构建同时携带并稳定表达多基因的基因工程hNSC,为脊髓损伤治疗的基础研究及进一步临床应用提供了有价值的细胞资源。

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通过测定典型的多环芳烃类物质苯并(a)芘(BaP)致毒后鱼体内几种重要分子生态毒理学指标的变化,来反映苯并(a)芘致毒对鱼体的影响.结果表明,肝脏ATPase活性降低,GST活性升高,DNA加合物相对标记水平(RAL)也增大,而EROD活性没有明显改变.这说明苯并(a)芘致毒对鱼体正常生命活动产生了重大影响,并具有潜在的致癌性.

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The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

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Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

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In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) inte-grated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption toachieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simu-lation tool PISCES-Ⅱ were used to analyze the dc and transient characteristics of the device. The devicehas a response time (including rise time and fall time) less than 200 ns, much faster than the thermoopticand micro-electromechanical systems (MEMSs) based VOAs.

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提出了一种基于仿生模式识别(Biomimatic Pattern Recognition)和多权值神经元网络(Multi-Weights.Neu-ral Network)的人脸识别新方法.对仿生模式识别理论在人脸识别中的应用模型作了讨论,并且介绍了一种新的人脸特征提取方法.本文通过实验对本文提出的基于仿生模式识别的方法和基于K近邻的方法做了对比,实验结果表明本文的方法克服了对未训练类型的人脸误识问题,提高了人脸识别系统的训练速度和正确识别率.

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The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

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Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

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Sessão plenária de abertura; Relatos por estado sobre o comportamento da cultura da soja na safra 2003/2004: Paraná, São Paulo, Minas Gerais, Distrito Federal, Goiás e Tocantins, Mato Grosso, Mato Grosso do Sul, Bahia, Maranhão, Piauí, Pará, Roraima, Rondônia; Palestras - Rede de ensaios para controle de doenças na cultura da soja; Comissões técnicas; Economia rural e difusão de tecnologia; Plantas daninhas; Ecologia, Fisiologia e Práticas culturais; Entomologia; Fitopatologia; Genética e Melhoramento; Tecnologia de sementes; Nutrição vegetal, fertilidade e biologia do solo; Sessão plenária final; Regimento interno da Reunião de Pesquisa de Soja da Região Central do Brasil.

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The Activity in GEriatric acute CARe (AGECAR) is a randomised control trial to assess the effectiveness of an intrahospital strength and walk program during short hospital stays for improving functional capacity of patients aged 75 years or older. Patien